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  • 型号: FDMS86350
  • 制造商: Fairchild Semiconductor
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FDMS86350产品简介:

ICGOO电子元器件商城为您提供FDMS86350由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 FDMS86350价格参考¥12.26-¥23.85。Fairchild SemiconductorFDMS86350封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 80V 25A(Ta),130A(Tc) 2.7W(Ta),156W(Tc) Power56。您可以下载FDMS86350参考资料、Datasheet数据手册功能说明书,资料中有FDMS86350 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

MOSFET N-CH 80V 80A POWER56MOSFET 80V N-Channel PowerTrench MOSFET

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

80 A

Id-连续漏极电流

80 A

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,Fairchild Semiconductor FDMS86350PowerTrench®

数据手册

点击此处下载产品Datasheet

产品型号

FDMS86350

Pd-PowerDissipation

156 W

Pd-功率耗散

156 W

Qg-GateCharge

110 nC

Qg-栅极电荷

110 nC

RdsOn-Drain-SourceResistance

2 mOhms

RdsOn-漏源导通电阻

2 mOhms

Vds-Drain-SourceBreakdownVoltage

80 V

Vds-漏源极击穿电压

80 V

Vgs-Gate-SourceBreakdownVoltage

+/- 20 V

Vgs-栅源极击穿电压

20 V

Vgsth-Gate-SourceThresholdVoltage

3.8 V

Vgsth-栅源极阈值电压

3.8 V

上升时间

34 ns

下降时间

11 ns

不同Id时的Vgs(th)(最大值)

4.5V @ 250µA

不同Vds时的输入电容(Ciss)

10680pF @ 40V

不同Vgs时的栅极电荷(Qg)

155nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

2.4 毫欧 @ 25A,10V

产品种类

MOSFET

供应商器件封装

Power56

其它名称

FDMS86350DKR

典型关闭延迟时间

40 ns

功率-最大值

2.7W

包装

Digi-Reel®

单位重量

4.376 g

商标

Fairchild Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

8-PowerTDFN

封装/箱体

Power-56-10

工厂包装数量

3000

晶体管极性

N-Channel

最大工作温度

+ 150 C

最小工作温度

- 55 C

标准包装

1

正向跨导-最小值

70 S

漏源极电压(Vdss)

80V

特色产品

http://www.digikey.com/product-highlights/cn/zh/fairchild-80v-n-channel-powertrench-msofet/3817

电流-连续漏极(Id)(25°C时)

25A (Ta), 130A (Tc)

系列

FDMS86350

配置

Single Quad Drain Triple Source

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PDF Datasheet 数据手册内容提取

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D M S 8 October 2015 6 3 5 FDMS86350 0 N N-Channel PowerTrench® MOSFET -C h 80 V, 130 A, 2.4 mΩ a n n Features General Description e l (cid:132) Max r = 2.4 mΩ at V = 10 V, I = 25 A This N-Channel MOSFET is produced using Fairchild P DS(on) GS D Semiconductor‘s advanced Power Trench® process that has o (cid:132) Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A been especially tailored to minimize the on-state resistance and w e (cid:132) Advanced Package and Silicon combination for low r yet maintain superior switching performance. r DS(on) T and high efficiency Applications re (cid:132) MSL1 robust package design n c (cid:132) Primary MOSFET h (cid:132) 100% UIL tested ® (cid:132) RoHS Compliant (cid:132) Synchronous Rectifier M (cid:132) Load Switch O S (cid:132) Motor Control Switch F E T Bottom Top Pin 1 S S D Pin 1 S S G S D S D D D D D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25 °C 130 C I -Continuous T = 25 °C (Note 1a) 25 A D A -Pulsed (Note 4) 300 E Single Pulse Avalanche Energy (Note 3) 864 mJ AS Power Dissipation T = 25 °C 156 P C W D Power Dissipation T = 25 °C (Note 1a) 2.7 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 0.8 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 45 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86350 FDMS86350 Power 56 13 ’’ 12 mm 3000 units ©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS86350 Rev. 1.2

F Electrical Characteristics TJ = 25 °C unless otherwise noted D M Symbol Parameter Test Conditions Min Typ Max Units S 8 Off Characteristics 6 3 BV Drain to Source Breakdown Voltage I = 250 μA, V = 0 V 80 V 5 DSS D GS 0 ΔBVDSS Breakdown Voltage Temperature I = 250 μA, referenced to 25 °C 45 mV/°C N ΔT Coefficient D J - C I Zero Gate Voltage Drain Current V = 64 V, V = 0 V 1 μA DSS DS GS h I Gate to Source Leakage Current V = ±20 V, V = 0 V ±100 nA a GSS GS DS n On Characteristics n e VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.5 3.8 4.5 V l P ΔV Gate to Source Threshold Voltage o ΔTGS(th) Temperature Coefficient ID = 250 μA, referenced to 25 °C -12 mV/°C w J e VGS = 10 V, ID = 25 A 2.0 2.4 rT rDS(on) Static Drain to Source On Resistance VGS = 8 V, ID = 22 A 2.5 3.2 mΩ re VGS = 10 V, ID = 25 A, TJ = 125 °C 3.1 3.8 n c gFS Forward Transconductance VDS = 5 V, ID = 25 A 70 S h ® Dynamic Characteristics M Ciss Input Capacitance 8030 10680 pF O V = 40 V, V = 0 V, C Output Capacitance DS GS 1370 1825 pF S oss f = 1 MHz F Crss Reverse Transfer Capacitance 31 50 pF E R Gate Resistance 0.1 1.1 3 Ω T g Switching Characteristics t Turn-On Delay Time 50 80 ns d(on) tr Rise Time VDD = 40 V, ID = 25 A, 34 55 ns td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 40 65 ns t Fall Time 11 20 ns f Q Total Gate Charge V = 0 V to 10 V 110 155 nC g GS Qg Total Gate Charge VGS = 0 V to 8 V VDD = 40 V, 90 127 nC Qgs Gate to Source Charge ID = 25 A 46 nC Q Gate to Drain “Miller” Charge 23 nC gd Drain-Source Diode Characteristics I Diode Continuous Forward Current T = 25 °C 130 A S C I Diode Pulse Current T = 25 °C 300 A S, pulse C V = 0 V, I = 2.1 A (Note 2) 0.71 1.2 V Source to Drain Diode Forward Voltage GS S V SD V = 0 V, I = 25 A (Note 2) 0.79 1.3 GS S t Reverse Recovery Time 63 101 ns rr I = 25 A, di/dt = 100 A/μs Q Reverse Recovery Charge F 62 100 nC rr Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 45 °C/W when mounted on a b. 115 °C/W when mounted on a 1 in2 pad of 2 oz copper. minimum pad of 2 oz copper. GDFDSSFSS GDFDSSFSS 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 864 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 24 A, VDD = 80 V, VGS = 10 V, 100% test at L = 0.1 mH, IAS = 74 A. 4. Pulse Id limited by junction temperature, td <= 100 μs, please refer to SOA curve for more details. ©2013 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMS86350 Rev. 1.2

F D M Typical Characteristics TJ = 25 °C unless otherwise noted S 8 6 300 5 3 5 250 VGS = 10 V PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs NCE VGS = 6 V 0 N A 4 T (A) 200 VGS = 8 V ESIST VGS = 6.5 V -Ch I, DRAIN CURREND110550000 VGS = 7 V VGS = 6.5 VVGS = 6 V NORMALIZEDDRAIN TO SOURCE ON-R 0123 PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs VGS = 7 VVGS =V G8 SV = 10 V annel PowerTr 0 1 2 3 4 5 0 50 100 150 200 250 300 e n VDS, DRAIN TO SO URCE VOLTAGE (V) ID, DRAIN C URRENT (A) c h Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance ® vs Drain Current and Gate Voltage M O S 1.8 10 F E PULSE DURATION = 80 μs E STANC 1.6 IVDG =S 2=5 1 A0 V ()E mΩ 8 DUTY CYCLE = 0.5% MAX T NORMALIZED AIN TO SOURCE ON-RESI 0111....8024 rDRAIN TO ,DS(on)SOURCE ON-RESISTANC 246 ID =T 2J5 = A 125 ToJC = 25 oC R D 0.6 0 -75 -50 -25 0 25 50 75 100 125 150 5 6 7 8 9 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 300 500 PULSE DURATION = 80 μs A) 250 DUTY CYCLE = 0.5% MAX T ( 100 VGS = 0 V N A) VDS = 5 V RE T (200 UR 10 N C RRE150 AIN 1 TJ = 150 oC U R N C TJ = 150 oC E D I, DRAID10500 TJ = 25 oC REVERS 0.00.11 TJ = 25 oC TJ = -55 oC I, S TJ = -55 oC 0 0.001 3 4 5 6 7 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2013 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDMS86350 Rev. 1.2

F D M Typical Characteristics TJ = 25 °C unless otherwise noted S 8 6 10 10000 3 5 E (V) ID = 25 A VDD = 40 V Ciss 0 N G 8 A - T C OL VDD = 30 V VDD = 50 V pF)1000 Coss h O SOURCE V 46 PACITANCE ( 100 annel P E T CA o AT 2 w V, GGS 0 10 fV =G S1 =M 0H Vz Crss erT r 0 20 40 60 80 100 120 0.1 1 10 80 e Qg, GATE CH ARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) nc h Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain ® to Source Voltage M O 100 200 S RθJC = 0.8 oC/W F NT (A) T (A) 160 ET E N R E CUR TJ = 25 oC URR 120 VGS = 10 V E 10 C AVALANCH TJ = 125 oCTJ = 100 oC , IDRAIN D 4800 Limited by Package VGS = 8 V , S A I 1 0 0.01 0.1 1 10 100 1000 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Case Temperature 1000 20000 W)10000 SINGLE PULSE ENT (A) 100 10 μs OWER ( RTCθJ =C 2=5 0 o.C8 oC/W R P R T U 10 THIS AREA IS N N C LIMITED BY rDS(on) 100 μs SIE I, DRAID 1 STRJIθN J=CG M=L AE0X .P8 R UoCAL/STWEED CURVE BENT TO 110 m mss EAK TRAN1000 TC = 25 oC MEASURED DATA DC , P)K 0.1 P 0.1 1 10 100 300 P( 100 10-5 10-4 10-3 10-2 10-1 1 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation ©2013 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDMS86350 Rev. 1.2

F D M Typical Characteristics TJ = 25 °C unless otherwise noted S 8 2 6 NT DUTY CYCLE-DESCENDING ORDER 35 NSIE 1 0 N A D EFFECTIVE TRAL RESISTANCE 0.1 D = 000000......210005521 PDM t1t2 -Channel ZERM NOTES: P MALITHE SINGLE PULSE RZθθJJCC( =t) 0=. 8r( °t)C x/W RθJC ow OR Peak TJ = PDM x ZθJC(t) + TC e r(t), N 0.0110-5 10-4 10-3 10-2 Du1t0y- 1Cycle, D = t1 / t2 1 rTren t, RECTANGULAR PULSE DURATION (sec) c h Figure 13. Junction-to-Case Transient Thermal Response Curve ® M O S F E T ©2013 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDMS86350 Rev. 1.2

5.10 A 4.90 4.42 PKG 3.81 CL B 8 5 8 7 6 5 1.14 KEEP OUT AREA 3.65 PKG CL 6.25 5.90 4.79 6.61 1.27 PIN #1 1 4 IDICATOR TOP VIEW 1 2 3 4 1.27 0.61 SEE DETAIL A 3.81 5.10 LAND PATTERN SIDE VIEW RECOMMENDATION 3.81 0.10 C A B 1.27 0.47 (0.38) (8X) 0.37 1 4 (0.35) 0.65 0.55 NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA, PIN #1 B) ALL DIMENSIONS ARE IN MILLIMETERS. INDICATOR 4.66 4.46 C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER 8 5 ASME Y14.5M-2009. 0.70 E) IT IS RECOMMENDED TO HAVE NO TRACES 4.33 4.13 OR VIAS WITHIN THE KEEP OUT AREA. F) DRAWING FILE NAME: PQFN08JREV3. BOTTOM VIEW 0.10 C 1.10 0.90 0.08 C C 0.25 0.05 0.15 0.00 SEATING PLANE SCALE: 2:1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

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