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STP90NF03L产品简介:
ICGOO电子元器件商城为您提供STP90NF03L由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STP90NF03L价格参考。STMicroelectronicsSTP90NF03L封装/规格:晶体管 - FET,MOSFET - 单, 通孔 N 沟道 30V 90A(Tc) 150W(Tc) TO-220AB。您可以下载STP90NF03L参考资料、Datasheet数据手册功能说明书,资料中有STP90NF03L 详细功能的应用电路图电压和使用方法及教程。
STP90NF03L 是由 STMicroelectronics 生产的 N 沟道增强型功率 MOSFET,其应用场景广泛,尤其适用于需要高效能、低损耗和高可靠性的电力电子系统。以下是该型号的主要应用场景: 1. 开关电源 (SMPS):STP90NF03L 的低导通电阻(Rds(on))特性使其非常适合用于开关电源中的高频开关应用。它可以有效降低传导损耗,提高转换效率,常用于笔记本电脑适配器、LED 驱动器和其他消费电子产品的电源管理电路中。 2. 电机驱动:在电动工具、家用电器(如洗衣机、空调等)以及工业自动化设备中,STP90NF03L 可用于控制电机的启动、停止和速度调节。其快速开关特性和低热阻设计有助于提高系统的响应速度和稳定性,同时减少发热问题。 3. 电池管理系统 (BMS):该器件可用于保护锂电池组免受过充、过放及短路等异常情况的影响。通过精确控制电流路径,确保电池的安全运行,并延长电池寿命。 4. 负载切换与保护电路:在汽车电子、通信基站等场合,STP90NF03L 可作为负载开关或保护元件使用,实现对不同负载的有效隔离与保护,防止因瞬态电压或电流冲击导致的损坏。 5. DC-DC 转换器:在便携式设备、电动汽车等领域,STP90NF03L 可用作同步整流管或主开关管,以提升 DC-DC 转换器的工作效率,减小体积并降低成本。 总之,STP90NF03L 凭借其优异的电气性能和可靠性,在各类电力电子应用中发挥着重要作用,特别是在需要高效能和紧凑设计的应用场景下表现出色。
参数 | 数值 |
产品目录 | |
描述 | MOSFET N-CH 30V 90A TO-220 |
产品分类 | FET - 单 |
FET功能 | 逻辑电平门 |
FET类型 | MOSFET N 通道,金属氧化物 |
品牌 | STMicroelectronics |
数据手册 | |
产品图片 | |
产品型号 | STP90NF03L |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | STripFET™ |
不同Id时的Vgs(th)(最大值) | 2.5V @ 250µA |
不同Vds时的输入电容(Ciss) | 2700pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 47nC @ 5V |
不同 Id、Vgs时的 RdsOn(最大值) | 6.5 毫欧 @ 45A,10V |
产品目录页面 | |
供应商器件封装 | TO-220AB |
其它名称 | 497-7535-5 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1164/PF64812?referrer=70071840 |
功率-最大值 | 150W |
包装 | 管件 |
安装类型 | 通孔 |
封装/外壳 | TO-220-3 |
标准包装 | 50 |
漏源极电压(Vdss) | 30V |
电流-连续漏极(Id)(25°C时) | 90A (Tc) |
STP90NF03L STB90NF03L-1 Ω 2 N-channel 30V - 0.0056 -90A TO-220/I PAK Low gate charge STripFET™ Power MOSFET General features V Type DSS R I (@Tjmax) DS(on) D STP90NF03L 30V <0.0065Ω 90A STP90NF03L-1 30V <0.0065Ω 90A ■ Optimal RDS(on) x Qg trade-off 123 123 ■ Conduction losses reduced TO-220 I2PAK ■ Switching losses reduced Description This application specific Power Mosfet is the third generation of STMicroelectronics unique “Single Feature Size™” strip-based process. The Internal schematic diagram resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. Applications ■ Switching application Order codes Part number Marking Package Packaging STP90NF03L P90NF03L TO-220 Tube STB90NF03L-1 B90NF03L I2PAK Tube September 2006 Rev 5 1/13 www.st.com 13
Contents STP90NF03L - STB90NF03L-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13
STP90NF03L - STB90NF03L-1 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 30 V DS GS V Gate-source voltage ± 20 V GS I Drain current (continuous) at T = 25°C 90 A D C I Drain current (continuous) at T =100°C 65 A D C I (1) Drain current (pulsed) 360 A DM P Total dissipation at T = 25°C 150 W TOT C Derating factor 0.73 W/°C T Operating junction temperature -65 to 175 J °C T Storage temperature 175 stg 1. Pulse width limited by safe operating area Table 2. Thermal data R Thermal resistance junction-case Max 1 °C/W thj-case R Thermal resistance junction-ambient Max 62.5 °C/W thj-a Maximum lead temperature for soldering T 300 °C l purpose 3/13
Electrical characteristics STP90NF03L - STB90NF03L-1 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V(BR)DSS voltage ID = 250 µA, VGS= 0 30 V Zero gate voltage drain VDS = Max rating, 1 µA I DSS current (VGS = 0) VDS = Max rating @125°C 10 µA Gate body leakage current IGSS (V = 0) VGS = ±20V ± 100 nA DS VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 1 2.5 V Static drain-source on VGS= 10V, ID= 45A 0.0056 0.0065 Ω R DS(on) resistance V = 5V, I = 45A 0.007 0.012 Ω GS D Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit V > ID(on) x RDS(on)max g (1) Forward transconductance DS , 40 S fs I = 45A D Input capacitance C 2700 pF iss Output capacitance C V =25V, f=1 MHz, V =0 860 pF oss DS GS Reverse transfer C 170 pF rss capacitance Q Total gate charge 35 47 nC g V =24V, I = 90A Q Gate-source charge DD D 10 nC gs V =5V Q Gate-drain charge GS 18 nC gd 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit V = 15V, I = 45A, t Turn-on delay time DD D 30 ns d(on) R = 4.7Ω, V = 4.5V t rise time G GS 200 ns r (see Figure 12) V = 15V, I = 45A, ns t Turn-off-delay time DD D 50 d(off) R =4.7Ω, V = 4.5V ns t fall time G GS 105 f (see Figure 12) 4/13
STP90NF03L - STB90NF03L-1 Electrical characteristics Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 90 A I (1) Source-drain current (pulsed) 360 A SDM VSD(2) Forward on voltage ISD=90A, VGS=0 1.3 V I =90A, trr Reverse recovery time SD 80 ns di/dt = 100A/µs, Qrr Reverse recovery charge 90 µC V =15V, Tj=150°C I Reverse recovery current DD 2.5 A RRM (see Figure 14) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/13
Electrical characteristics STP90NF03L - STB90NF03L-1 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13
STP90NF03L - STB90NF03L-1 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs vs temperature temperature Figure 11. Source-drain diode forward characteristics 7/13
Test circuit STP90NF03L - STB90NF03L-1 3 Test circuit Figure 12. Switching times test circuit for Figure 13. Gate charge test circuit resistive load Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform 8/13
STP90NF03L - STB90NF03L-1 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13
Package mechanical data STP90NF03L - STB90NF03L-1 TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 10/13
STP90NF03L - STB90NF03L-1 Package mechanical data TO-262(I2PAK)MECHANICALDATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 11/13
Revision history STP90NF03L - STB90NF03L-1 5 Revision history T able 7. Revision history Date Revision Changes 09-Sep-2004 4 Complete version 17-Aug-2006 5 New template, no content change 12/13
STP90NF03L - STB90NF03L-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13