Polar2TM IXTP450P2 V = 500V DSS Power MOSFETs IXTQ450P2 I = 16A D25 R ≤≤≤≤≤ 330mΩΩΩΩΩ IXTH450P2 DS(on) t = 400ns N-Channel Enhancement Mode rr(typ) Avalanche Rated Fast Intrinsic Diode TO-220AB (IXTP) G DS Tab Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) V T = 25°C to 150°C 500 V DSS J V T = 25°C to 150°C, R = 1MΩ 500 V DGR J GS V Continuous ± 30 V G GSS D V Transient ± 40 V GSM S Tab I T = 25°C 16 A D25 C I T = 25°C, Pulse Width Limited by T 48 A TO-247(IXTH) DM C JM I T = 25°C 16 A A C E T = 25°C 750 mJ AS C dv/dt I ≤ I , V ≤ V ,T ≤ 150°C 10 V/ns S DM DD DSS J P T = 25°C 300 W G D C D Tab S T -55 ... +150 °C J T 150 °C JM G = Gate D = Drain T -55 ... +150 °C stg S = Source Tab = Drain T Maximum Lead Temperature for Soldering 300 °C L T Plastic Body for 10s 260 °C SOLD Features M Mounting Torque 1.13/10 Nm/lb.in. d (cid:122) Avalanche Rated Weight TO-220 3.0 g (cid:122) Fast Intrinsic Diode TO-3P 5.5 g (cid:122) Dynamic dv/dt Rated TO-247 6.0 g (cid:122) Low Package Inductance Advantages Symbol Test Conditions Characteristic Values (cid:122) High Power Density (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. (cid:122) Easy to Mount J (cid:122) Space Savings BV V = 0V, I = 250μA 500 V DSS GS D V V = V , I = 250μA 2.5 4.5 V GS(th) DS GS D Applications I V = ± 30V, V = 0V ± 100 nA GSS GS DS (cid:122) Switch-Mode and Resonant-Mode I V = V , V = 0V 5 μA DSS DS DSS GS Power Supplies TJ = 125°C 25 μA (cid:122) DC-DC Converters R V = 10V, I = 0.5 • I , Note 1 330 mΩ (cid:122) Laser Drivers DS(on) GS D D25 (cid:122) AC and DC Motor Drives (cid:122) Robotics and Servo Controls © 2011 IXYS CORPORATION, All Rights Reserved DS100241A(10/11)

IXTP450P2 IXTQ450P2 IXTH450P2 Symbol Test Conditions Characteristic Values TO-3P Outline (T = 25°C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 • I , Note 1 12 20 S fs DS D D25 C 2280 pF iss C V = 0V, V = 25V, f = 1MHz 257 pF oss GS DS C 30 pF rss t 16 ns d(on) Resistive Switching Times t 10 ns r V = 10V, V = 0.5 • V , I = 0.5 • I t GS DS DSS D D 2 5 50 ns d(off) R = 10Ω (External) t G 18 ns f Q 43 nC g(on) Q V = 10V, V = 0.5 • V , I = 0.5 • I 18 nC gs GS DS DSS D D25 Q 11 nC gd R 0.42 °C/W thJC R TO-220 0.50 °C/W thCS R TO-3P & TO-247 0.25 °C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25°C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 16 A S GS TO-247 Outline I Repetitive, Pulse Width Limited by T 64 A SM JM V I = I , V = 0V, Note 1 1.3 V SD F S GS t I = 16A, -di/dt = 100A/μs 400 ns rr VF = 100V, V = 0V ∅ P R GS 1 2 3 Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. e Terminals: 1 - Gate 2 - Drain TO-220 Outline 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 1 - Gate 2 - Drain L1 4.50 .177 3 - Source ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXTP450P2 IXTQ450P2 IXTH450P2 Fig. 1. Output Characteristics @ T = 25ºC Fig. 2. Extended Output Characteristics @ T = 25ºC J J 16 50 14 V G S = 170VV 45 V G S = 170VV 40 12 35 6V mperes 108 mperes 2350 I - AD 6 I - AD 20 6V 15 4 10 2 5V 5 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. R Normalized to I = 8A Value vs. DS(on) D Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature 16 3.2 VGS = 10V 14 6V VGS = 10V 2.8 12 d 2.4 e z peres 10 ormali 2.0 I D = 16A I - AmD 68 - NS(on) 1.6 I D = 8A D 5V R 1.2 4 2 0.8 4V 0 0.4 0 1 2 3 4 5 6 7 8 9 10 11 12 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 8A Value vs. Fig. 6. Maximum Drain Current vs. Drain Current Case Temperature 3.6 18 VGS = 10V 16 3.2 TJ = 125ºC 14 d 2.8 ze 12 ali es orm 2.4 per 10 N m - on) 2.0 TJ = 25ºC - AD 8 DS( I 6 R 1.6 4 1.2 2 0.8 0 0 5 10 15 20 25 30 35 40 45 50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade © 2011 IXYS CORPORATION, All Rights Reserved

IXTP450P2 IXTQ450P2 IXTH450P2 Fig. 7. Input Admittance Fig. 8. Transconductance 40 50 35 TJ = - 40ºC 40 30 eres 25 T J = 1- 242505ºººCCC mens 30 25ºC p e m 20 Si I - AD 15 g - f s 20 125ºC 10 10 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 5 10 15 20 25 30 35 40 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 50 10 45 9 VDS = 250V I D = 8A 40 8 I G = 10mA 35 7 eres 30 olts 6 p V Am 25 - S 5 - S 20 VG 4 I TJ = 125ºC 15 3 TJ = 25ºC 10 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 15 20 25 30 35 40 45 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100 RDS(on) Limit Ciss 25µs s 100µs d a ar1,000 10 F o s c e Pi er e - Coss mp c A acitan 100 I - D 1 p a C Crss TJ = 150ºC 1ms TC = 25ºC f = 1 MHz Single Pulse 10 0.1 0 5 10 15 20 25 30 35 40 10 100 1,000 VDS - Volts VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTP450P2 IXTQ450P2 IXTH450P2 Fig. 13. Maximum Transient Thermal Impedance 1 W / C - º 0.1 C J h) (t Z 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: T_450P2(5J-N45) 10-17-11

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