AON6508 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology VDS 30V • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A • Low Gate Charge R (at V =10V) < 3.2mW DS(ON) GS • High Current Capability R (at V = 4.5V) < 5mW • RoHS and Halogen-Free Compliant DS(ON) GS Application 100% UIS Tested • DC/DC Converters in Computing, Servers, and POL 100% R Tested g • Isolated DC/DC Converters in Telecom and Industrial DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS GGaattee--SSoouurrccee VVoollttaaggee VV ±±2200 VV GGSS Continuous Drain TC=25°C I 32 CurrentG T =100°C D 25 A C Pulsed Drain Current C I 128 DM Continuous Drain TA=25°C I 29 A Current T =70°C DSM 23 A Avalanche Current C I 46 A AS Avalanche energy L=0.05mH C E 53 mJ AS V Spike 100ns V 36 V DS SPIKE T =25°C 41 C P W Power Dissipation B T =100°C D 16 C T =25°C 4.2 A P W Power Dissipation A T =70°C DSM 2.7 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 24 30 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 53 64 °C/W Maximum Junction-to-Case Steady-State RqJC 2.6 3 °C/W Rev.2.0: January 2013 www.aosmd.com Page 1 of 6

Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 30 V DSS D GS V =30V, V =0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C 5 J I Gate-Body leakage current V =0V, V = ±20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 1.4 1.8 2.2 V GS(th) DS GS, D V =10V, I =20A 2.6 3.2 GS D mW R Static Drain-Source On-Resistance T=125°C 3.6 4.5 DS(ON) J V =4.5V, I =20A 3.6 5 mW GS D g Forward Transconductance V =5V, I =20A 105 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS I Maximum Body-Diode Continuous Current 48 A S DYNAMIC PARAMETERS C Input Capacitance 2010 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 898 pF oss GS DS C Reverse Transfer Capacitance 124 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.9 1.8 2.7 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 36 49 nC g Q (4.5V) Total Gate Charge 17 23 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 6 nC gs Q Gate Drain Charge 8 nC gd t Turn-On DelayTime 7.5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75W , 4.0 ns r GS DS L tt TTuurrnn--OOffff DDeellaayyTTiimmee RR ==33WW 3377..00 nnss D(off) GEN t Turn-Off Fall Time 7.5 ns f trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/m s 14 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/m s 20.3 nC A. The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSMis based on R qJAand the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =150°C. J(MAX) D. The RqJAis the sum of the thermal impedance from junction to case RqJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: January 2013 www.aosmd.com Page 2 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 50 45 V =5V DS 80 4.5V 40 3.5V 10V 35 60 30 A) A) 25 I(D 40 3V I(D 20 15 125°C 25°C 20 10 VGS=2.5V 5 0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 Fig 1: On-RegioVnD CSh(Vaoraltcst)eristics (Note E) Figure 2: TransfeVrG CS(hVaorlatsc)teristics (Note E) 6 1.8 5 ce WWWWm) 4 VGS=4.5V Resistan 11..46 VIDG=S2=01A0V (N) 3 On- RDS(O 2 VGS=10V alized 1.2 m V =4.5V 1 Nor 1 IDG=S20A 0 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200 I (A) D Temperature (°C) Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature Voltage (Note E) ((NNoottee EE)) 8 1.0E+02 I =20A D 1.0E+01 6 1.0E+00 WWWWm) 125°C A) 125°C ( 4 ( 1.0E-01 ON) IS RDS( 1.0E-02 25°C 2 25°C 1.0E-03 1.0E-04 0 2 4 6 8 10 1.0E-05 V (Volts) V (Volts) GS SD Figure 5: On-Resistance vs. Gate-Source Voltage F0i.g0ure 6:0 B.2ody-D0i.o4de Ch0a.6racteri0s.t8ics (N1o.t0e E) 1.2 (Note E) Rev.2.0: January 2013 www.aosmd.com Page 3 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 8 VIDD=S2=01A5V 2500 Ciss F) 2000 p V(Volts)GS 46 pacitance ( 1500 a 1000 C C oss 2 500 C 0 0 rss 0 10 20 30 40 50 0 5 10 15 20 25 Qg(nC) VDS(Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000.0 500 100.0 10m s 10m s 400 T =150°C R J(Max) DS(ON) T =25°C 100m s C s) 10.0 W) 300 17 (AmpD 1.0 DC 110mmss ower ( 200 52 I P 10 T =150°C 0.1 TJ(=M2ax5)°C 100 C 0.0 0 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 V (Volts) 0 DS Pulse Width (s) 18 Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-Case OOppeerraattiinngg AArreeaa ((NNoottee FF)) ((NNoottee FF)) 10 ent DTJ=,PTKo=nT/TC+PDM.ZqJC.RqJC IDn= d0e.5s,c e0n.3d,i n0g.1 o, r0d.e0r5, 0.02, 0.01, single pulse Transistance 1 RqJC=3°C/W 40 d si ee zR malimal P Norher 0.1 D CT J T Zqqqq on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: January 2013 www.aosmd.com Page 4 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 W) 40 40 sipation ( 30 ating I(A)D 30 wer Dis 20 urrent r 20 o C P 10 10 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TCASE(°°°°C) TCASE(°°°°C) Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F) 10000 T =25°C A 1000 W) er ( 100 w o P 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to- AAmmbbiieenntt ((NNoottee HH)) 10 D=Ton/T In descending order nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e nsince 1 RqJA=64°C/W 40 Trasta d si ee zR 0.1 malimal NorJATher 0.01 Single Pulse PD Zqqqq T on T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: January 2013 www.aosmd.com Page 5 of 6

Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms LL 2 Vds EA R = 1/2 LIAR BVDSS Id Vds + Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev.2.0: January 2013 www.aosmd.com Page 6 of 6