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F D S 6 May 2008 6 8 0 A FDS6680AS tm S 30V N-Channel PowerTrench® SyncFET™ 3 0 V General Description Features N - C TMhOeS FFDEST6 6a8n0dA SSc hiso tdtkeys igdnioedde t oin r espylnaccher oan soiunsg leD CS:OD-C8 • 11.5 A, 30 V. RDS(ON) max= 10.0 mΩ @ VGS = 10 V ha R max= 12.5 mΩ @ V = 4.5 V power supplies. This 30V MOSFET is designed to DS(ON) GS n maximize power conversion efficiency, providing a low n RDS(ON) and low gate charge. The FDS6680AS • Includes SyncFET Schottky body diode el includes an integrated Schottky diode using Fairchild’s P monolithic SyncFET technology. The performance of • Low gate charge (22nC typical) o w the FDS6680AS as the low-side switch in a e synchronous rectifier is indistinguishable from the • High performance trench technology for extremely low r performance of the FDS6680 in parallel with a Schottky T diode. RDS(ON) and fast switching re n Applications • High power and current handling capability c h ® • DC/DC converter S y • Low side notebooks n c F E D T D 5 4 ™ D D 6 3 7 2 G S S 8 1 SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 11.5 A – Pulsed 50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680AS FDS6680AS 13’’ 12mm 2500 units ©2008 Fairchild Semiconductor Corporation FDS6680AS Rev B2(X)

F D Electrical Characteristics T = 25°C unless otherwise noted S A 6 Symbol Parameter Test Conditions Min Typ Max Units 6 8 0 Off Characteristics A S BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆ B∆VTDJ SS BCroeeafkfidcioewnnt Voltage Temperature ID = 10 mA, Referenced to 25°C 26 mV/°C 30V IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA N - IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA C h On Characteristics (Note 2) a n VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.5 3 V n ∆ V∆GTSJ( th) GTeamtep Tehraretusrheo Cldo Veofflitcaiegnet I D = 10 mA, Referenced to 25°C –4 mV/°C el P RDS(on) Static Drain–Source VGS = 10 V, ID = 11.5 A 8.4 10.0 mΩ ow On–Resistance VGS = 4.5 V, ID = 9.5 A 10.3 12.5 e V =10 V, I =11.5A, T=125°C 12.3 15.5 r GS D J T r ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A e n gFS Forward Transconductance VDS = 15 V, ID = 11.5 A 48 S c h Dynamic Characteristics ® Ciss Input Capacitance VDS = 15 V, V GS = 0 V, 1240 pF Sy C Output Capacitance f = 1.0 MHz 350 pF n oss c Crss Reverse Transfer Capacitance 120 pF F E RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4 Ω T ™ Switching Characteristics (Note 2) td(on) Turn–On Delay Time 9 18 ns tr Turn–On Rise Time VDS = 15 V, ID = 1 A, 5 10 ns V = 10 V, R = 6 Ω t Turn–Off Delay Time GS GEN 27 42 ns d(off) t Turn–Off Fall Time 11 21 ns f td(on) Turn–On Delay Time 11 20 ns tr Turn–On Rise Time VDS = 15 V, ID = 1 A, 12 22 ns V = 4.5 V, R = 6 Ω t Turn–Off Delay Time GS GEN 18 32 ns d(off) t Turn–Off Fall Time 11 20 ns f Qg(TOT) Total Gate Charge at Vgs=10V 22 30 nC Qg Total Gate Charge at Vgs=5V VDD = 15 V, ID = 11.5 A, 12 16 nC Q Gate–Source Charge 3.5 nC gs Q Gate–Drain Charge 3.4 nC gd FDS6680AS Rev B2(X)

F D Electrical Characteristics TA = 25°C unless otherwise noted S 6 Symbol Parameter Test Conditions Min Typ Max Unit 6 8 0 Drain–Source Diode Characteristics and Maximum Ratings A S IS Maximum Continuous Drain–Source Diode Forward Current 3.5 A 3 VSD Drain–Source Diode Forward VGS = 0 V, IS = 3.5 A (Note 2) 0.5 0.7 V 0 Voltage VGS = 0 V, IS = 7 A (Note 2) 0.6 V T Diode Reverse Recovery Time I = 11.5A, 18 nS N rr F - C Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs (Note 3) 12 nC h a Notes: n 1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the n θJA drain pins. R is guaranteed by design while R is determined by the user's board design. e θJC θCA l P o w e a) 50°/W when b) 105°/W when c) 125°/W when mounted on a mounted on a 1 in2 mounted on a .04 in2 minimum pad. rT pad of 2 oz copper pad of 2 oz copper r e n c h Scale 1 : 1 on letter size paper ® 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% S 3. See “SyncFET Schottky body diode characteristics” below. y n c F E T ™ FDS6680AS Rev B2(X)

F D Typical Characteristics S 6 6 8 0 A 50 2 S VGS = 10V 3.5V 4.0V CE1.8 VGS = 3.0V 3 40 6.0V N 0 I, DRAIN CURRENT (A)D123000 4.5V 3.0V2.5V R, NORMALIZEDDS(ON)DRAIN-SOURCE ON-RESISTA111...1246 3.5V 4.0V 4.5V 5.0V 6.0V 10.0V V N-Channel P o 0 0.8 w 0 0.4 0.8 1.2 1.6 2 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) er T r Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with e Drain Current and Gate Voltage. n c h ® 1.4 0.05 S MALIZEDN-RESISTANCE1.2 VIDG =S =11 1.50AV TANCE (OHM)00..0034 ID = 6A yncFET R, NORDS(ON) DRAIN-SOURCE O0.81 R, ON-RESISDS(ON)00..0012 TA = 25oC TA = 125oC ™ 0.6 0 -50 -25 0 25 50 75 100 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage. 50 10 VDS = 5V VGS = 0V A) 40 T ( 1 NT (A) RREN TA = 125oC RE 30 CU 0.1 DRAIN CUR 20 TA = 125oC -55oC RSE DRAIN 0.01 25oC -55oC I, D10 EVE 0.001 25oC I, RS 0 0.0001 1 1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6680AS Rev B2(X)

F D Typical Characteristics (continued) S 6 6 8 0 A 10 1800 S f = 1MHz ATE-SOURCE VOLTAGE (V) 468 ID =11.5A VDS = 10V15V 20V CAPACITANCE (pF)11692500000000 Coss Ciss VGS = 0 V 30V N-Chann V, GGS 2 300 el P Crss o 0 0 w 0 5 10 15 20 25 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) er T r Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. e n c 1000 50 h ® T (A) 100 RDS(ON) LIMIT 1ms100µs POWER (W)40 SRIθNJTAG A=L = E1 22 P55U°°CCLS/WE Sync RAIN CURREN 110 DC10s1s100ms10ms K TRANSIENT 2300 FET™ I, DD 0.1 SRIθNJVTAG GA=L S= E1= 2 2 P155U0ooCCVL/SWE P(pk), PEA10 0.01 0 0.1 1 10 100 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 E C VE AN D = 0.5 FFECTIRESIST 0.1 0.02.1 RRθθJAJA(t )= =1 2r(5t) °*C R/WθJA ED EMAL 0.05 P(pk) RMALIZT THER 0.01 0.002.01 t1t2 r(t), NOANSIEN SINGLE PULSE DTuJt y- TCAy c=l eP, D* R =θ JtA1 (/t )t2 R T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6680AS Rev B2(X)

F D Typical Characteristics (continued) S 6 6 8 0 A SyncFET Schottky Body Diode S Characteristics 3 0 Fairchild’s SyncFET process embeds a Schottky diode in Schottky barrier diodes exhibit significant leakage at high V parallel with PowerTrench MOSFET. This diode exhibits temperature and high reverse voltage. This will increase N similar characteristics to a discrete external Schottky the power in the device. - diode in parallel with a MOSFET. Figure 12 shows the C reverse recovery characteristic of the FDS6680AS. h 0.1 a A) n ENT ( 0.01 TA = 125oC ne CURR l P E 0.001 o KAG TA = 100oC w A e LE 0.0001 r 3A/DIV EVERSE 0.00001 Tren I, RDSS0.000001 TA = 25oC ch® 0 5 10 15 20 25 30 S VDS, REVERSE VOLTAGE (V) y Figure 14. SyncFET body diode reverse n c leakage versus drain-source voltage and F 10nS /DIV temperature. E T ™ Figure 12. FDS6680AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6680). v di 3A/ 0 nt: e urr C 10nS/div Figure 13. Non-SyncFET (FDS6680) body diode reverse recovery characteristic. FDS6680AS Rev B2(X)

F D Typical Characteristics S 6 6 8 0 V L A DS BVDSS S VGS tP V 30 RGE DUT +VDD IAS DSV DD V N VGS 0V tp IAS - -Cha vreaqryu itrPe dto p oebatka iIn 0.01Ω nn AS e l t AV P o Figure 15. Unclamped Inductive Load Test Figure 16. Unclamped Inductive w Circuit Waveforms e r T Drain Current r e Same type as n c + h 50kΩ ® 10V S - 10µF 1µF + y n V c - DD QG(TOT) F E VGS 10V T DUT ™ V Q Q GS GS GD I g(REF Charge, (nC) Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform t ON t OFF t d(ON) t R d(OFF VDS L VDS tr ) tf 90% 90% V + GS RGEN DUT VDD 0V 10% 10% - V 90% GS VGS 50% 50% DPuultsye C Wycidleth ≤ ≤ 0 1.1µ%s 0V 10% Pulse Width Figure 19. Switching Time Test Figure 20. Switching Time Waveforms Circuit FDS6680AS Rev B2(X)

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® FPS™ PDP-SPM™ The Power Franchise® Build it Now™ F-PFS™ Power-SPM™ CorePLUS™ FRFET® PowerTrench® tm CorePOWER™ Global Power ResourceSM Programmable Active Droop™ TinyBoost™ CROSSVOLT™ Green FPS™ QFET® TinyBuck™ CTL™ Green FPS™ e-Series™ QS™ TinyLogic® Current Transfer Logic™ GTO™ Quiet Series™ TINYOPTO™ EcoSPARK® IntelliMAX™ RapidConfigure™ TinyPower™ EfficentMax™ ISOPLANAR™ Saving our world 1mW at a time™ TinyPWM™ EZSWITCH™ * MegaBuck™ SmartMax™ TinyWire™ ™ MICROCOUPLER™ SMART START™ µSerDes™ MicroFET™ SPM® ® MicroPak™ STEALTH™ Fairchild® MillerDrive™ SuperFET™ UHC® Fairchild Semiconductor® MotionMax™ SuperSOT™-3 Ultra FRFET™ FACT Quiet Series™ Motion-SPM™ SuperSOT™-6 UniFET™ FACT® OPTOLOGIC® SuperSOT™-8 VCX™ FAST® OPTOPLANAR® SuperMOS™ VisualMax™ FastvCore™ ® ® FlashWriter® * tm * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, 2. A critical component in any component of a life support, (a) are intended for surgical implant into the body or (b) device, or system whose failure to perform can be reasonably support or sustain life, and (c) whose failure to perform when expected to cause the failure of the life support device or properly used in accordance with instructions for use provided system, or to affect its safety or effectiveness. in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition This datasheet contains the design specifications for product development. Advance Information Formative or In Design Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be pub- Preliminary First Production lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves No Identification Needed Full Production the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Obsolete Not In Production Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDS6680AS Rev B2(X)

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