STF2NK60Z - STQ2NK60ZR-AP STP2NK60Z - STD2NK60Z-1 Ω N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAK Zener-Protected SuperMESH™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STF2NK60Z 600 V < 8 Ω 1.4 A 20 STQ2NK60ZR-AP 600 V < 8 Ω 0.4 A 3 W STP2NK60Z 600 V < 8 Ω 1.4 A 45 W STD2NK60Z-1 600 V < 8 Ω 1.4 A 45 W 3 (cid:1) TYPICAL RDS(on) = 7.2 Ω TO-92 (Ammopack) 1 2 (cid:1) EXTREMELY HIGH dv/dt CAPABILITY TO-220 (cid:1) ESD IMPROVED CAPABILITY (cid:1) 100% AVALANCHE TESTED (cid:1) NEW HIGH VOLTAGE BENCHMARK (cid:1) GATE CHARGE MINIMIZED 3 2 1 3 2 DESCRIPTION 1 IPAK The SuperMESH™ series is obtained through an TO-220FP extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to Figure 2: Internal Schematic Diagram pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS- FETs including revolutionary MDmesh™ products. APPLICATIONS (cid:1) LOW POWER BATTERY CHARGERS (cid:1) SWITH MODE LOW POWER SUPPLIES(SMPS) (cid:1) LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS) Table 2: Order Codes Part Number Marking Package Packaging STQ2NK60ZR-AP Q2NK60ZR TO-92 AMMOPAK STP2NK60Z P2NK60Z TO-220 TUBE STD2NK60Z-1 D2NK60Z IPAK TUBE STF2NK60Z F2NK60Z TO-220FP TUBE Rev. 5 September 2005 1/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Table 3: Absolute Maximum ratings Symbol Parameter Value Unit TO-220 / TO-92 TO-220FP IPAK VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 1.4 0.4 1.4 (*) A ID Drain Current (continuous) at TC = 100°C 0.77 0.25 0.77 (*) A IDM ((cid:1)) Drain Current (pulsed) 5.6 1.6 5.6 (*) A PTOT Total Dissipation at TC = 25°C 45 3 20 W Derating Factor 0.36 0.025 0.16 W/°C VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ) 1500 V VISO Insulation Withstand Voltage (DC) 2500 V dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns Tj Operating Junction Temperature -55 to 150 °C Tstg Storage Temperature (cid:1) ( ) Pulse width limited by safe operating area (1) ISD ≤ 1.4A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220/IPAK TO-220FP TO-92 Unit Rthj-case Thermal Resistance Junction-case Max 2.77 6.25 -- °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 100 120 °C/W Rthj-lead Thermal Resistance Junction-lead Max -- -- 40 °C/W Tl Maximum Lead Temperature For Soldering 300 260 °C Purpose Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive 1.4 A (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy 90 mJ (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Table 6: Gate-Source Zener Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit BVGSO Gate source Igs= ± 1 mA (Open Drain) 30 V Breakdown Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source ID = 1mA, VGS = 0 600 V Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage VGS = ± 20V ±10 µA Current (VDS = 0) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on) Static Drain-source On VGS = 10V, ID = 0.7 A 7.2 8 Ω Resistance Table 8: Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V, ID= 0.7 A 1 S Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 170 pF Coss Output Capacitance 27 pF Crss Reverse Transfer Capacitance 5 pF Coss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 30 pF td(on) Turn-on Delay Time VDD = 300 V, ID = 0.65 A, 8 ns tr Rise Time RG= 4.7 Ω, VGS = 10 V 30 ns td(off) Turn-off Delay Time (Resistive Load see, Figure 22 ns tr Fall Time 22) 55 ns Qg Total Gate Charge VDD = 480V, ID = 1.5 A, 7.7 10 nC Qgs Gate-Source Charge VGS = 10V 1.7 nC Qgd Gate-Drain Charge (see, Figure 24) 4 nC Table 9: Source Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 1.5 A ISDM (2) Source-drain Current (pulsed) 6 A VSD (1) Forward On Voltage ISD = 1.5 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 1.3 A, di/dt = 100 A/µs 250 ns Qrr Reverse Recovery Charge VDD = 25V, Tj = 25°C 550 µC IRRM Reverse Recovery Current (see test circuit, Figure 23) 4.4 A trr Reverse Recovery Time ISD = 1.3 A, di/dt = 100 A/µs 300 ns Qrr Reverse Recovery Charge VDD = 25V, Tj = 150°C 690 µC IRRM Reverse Recovery Current (see test circuit, Figure 23) 4.6 A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 3/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 3: .Safe Operating Area For TO-220 Figure 6: Thermal Impedance For TO-220 Figure 4: Safe Operating Area For IPAK Figure 7: Thermal Impedance For IPAK Figure 5: Safe Operating Area For TO-92 Figure 8: Thermal Impedance For TO-92 4/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 9: Safe Operating Area For TO-220FP Figure 12: Thermal Impedance For TO-220FP Figure 10: Output Characteristics Figure 13: Transfer Characteristics Figure 11: Transconductance Figure 14: Gate Charge vs Gate-source Voltage 5/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 15: Static Drain-source On Resistance Figure 18: Source-Drain Forward Characteris- tics Figure 16: Capacitance Variations Figure 19: Maximum Avalanche Energy vs Temperature Figure 17: Normalized Gate Thereshold Volt- Figure 20: Normalized On Resistance vs Tem- age vs Temperature perature 6/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 21: Normalized BVDSS vs Temperature 7/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 22: Switching Times Test Circuit For Figure 24: Gate Charge Test Circuit Resistive Load Figure 23: Test Circuit For Inductive Load Switching and Diode Recovery Times 8/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 10/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 TO-92 AMMOPACK mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A1 4.45 4.95 0.170 0.194 T 3.30 3.94 0.130 0.155 T1 1.6 0.06 T2 2.3 0.09 d 0.41 0.56 0.016 0.022 P0 12.5 12.7 12.9 0.49 0.5 0.51 P2 5.65 6.35 7.05 0.22 0.25 0.27 F1, F2 2.44 2.54 2.94 0.09 0.1 0.11 delta H -2 2 -0.08 0.08 W 17.5 18 19 0.69 0.71 0.74 W0 5.7 6 6.3 0.22 0.23 0.24 W1 8.5 9 9.25 0.33 0.35 0.36 W2 0.5 0.02 H 18.5 20.5 0.72 0.80 H0 15.5 16 16.5 0.61 0.63 0.65 H1 25 0.98 D0 3.8 4 4.2 0.15 0.157 0.16 t 0.9 0.035 L 11 0.43 l1 3 0.11 delta P -1 1 -0.04 0.04 11/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 TO-251 (IPAK) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 H C A C2 A3 1 A L2 D L B3 B6 B B5 3 E = B2 = 2 G = = = = 1 L1 0068771-E 12/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 TO-92 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V 5° 5° 13/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 F F 1 G H G 2 F 1 2 3 L5 L2 L4 14/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Table 10: Revision History Date Revision Description of Changes 07-Jul-2004 3 The document change from “TARGET” to “COMPLETE” New stylesheet 11/Nov/2004 4 Added TO-220FP 05-Sep-2005 5 Inserted Ecopack indication 15/16

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 16/16