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  • 型号: STP55NF06FP
  • 制造商: STMicroelectronics
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STP55NF06FP产品简介:

ICGOO电子元器件商城为您提供STP55NF06FP由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STP55NF06FP价格参考¥2.35-¥2.35。STMicroelectronicsSTP55NF06FP封装/规格:晶体管 - FET,MOSFET - 单, 通孔 N 沟道 60V 50A(Tc) 30W(Tc) TO-220FP。您可以下载STP55NF06FP参考资料、Datasheet数据手册功能说明书,资料中有STP55NF06FP 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 60V 50A TO220FPMOSFET N-Ch 60 Volt 55 Amp

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

50 A

Id-连续漏极电流

50 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STP55NF06FPSTripFET™ II

数据手册

点击此处下载产品Datasheet

产品型号

STP55NF06FP

Pd-PowerDissipation

30 W

Pd-功率耗散

30 W

Qg-GateCharge

44.5 nC

Qg-栅极电荷

44.5 nC

RdsOn-Drain-SourceResistance

15 mOhms

RdsOn-漏源导通电阻

15 mOhms

Vds-Drain-SourceBreakdownVoltage

60 V

Vds-漏源极击穿电压

60 V

Vgs-Gate-SourceBreakdownVoltage

+/- 20 V

Vgs-栅源极击穿电压

20 V

Vgsth-Gate-SourceThresholdVoltage

3 V

Vgsth-栅源极阈值电压

3 V

上升时间

50 ns

下降时间

15 ns

不同Id时的Vgs(th)(最大值)

4V @ 250µA

不同Vds时的输入电容(Ciss)

1300pF @ 25V

不同Vgs时的栅极电荷(Qg)

60nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

18 毫欧 @ 27.5A,10V

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

TO-220FP

其它名称

497-3193-5

其它有关文件

http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1165/PF64758?referrer=70071840http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1165/PF253564?referrer=70071840

典型关闭延迟时间

36 ns

功率-最大值

30W

包装

管件

单位重量

2.040 g

商标

STMicroelectronics

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-3 整包

封装/箱体

TO-220FP-3

工厂包装数量

50

晶体管极性

N-Channel

最大工作温度

+ 175 C

最小工作温度

- 55 C

标准包装

50

正向跨导-最小值

18 S

漏源极电压(Vdss)

60V

电流-连续漏极(Id)(25°C时)

50A (Tc)

系列

STP55NF06FP

通道模式

Enhancement

配置

Single

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PDF Datasheet 数据手册内容提取

STB55NF06, STP55NF06, STP55NF06FP Ω N-channel 60 V, 0.015 , 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet — production data Features TAB TAB Order code V R max. I DSS DS(on) D STB55NF06 50 A 3 STP55NF06 60 V < 0.018 Ω 3 1 2 1 STP55NF06FP 50 A (1) TO-220 D2PAK 1. Refer to soa for the max allowable current value on FP-type due to Rth value ■ 100% avalanche tested ■ Exceptional dv/dt capability 3 2 1 TO-220FP Applications ■ Switching application Figure 1. Internal schematic diagram Description These Power MOSFETs have been developed (cid:36)(cid:8)(cid:18)(cid:0)(cid:79)(cid:82)(cid:0)(cid:52)(cid:33)(cid:34)(cid:9) using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC- (cid:39)(cid:8)(cid:17)(cid:9) DC converters for telecom and computer applications, and applications with low gate charge driving requirements. (cid:51)(cid:8)(cid:19)(cid:9) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) Table 1. Device summary Order code Marking Package Packaging STB55NF06 B55NF06 D²PAK Tape and reel STP55NF06 P55NF06 TO-220 Tube STP55NF06FP P55NF06FP TO-220 May 2012 Doc ID 7544 Rev 11 1/19 This is information on a product in full production. www.st.com 19

Contents STB55NF06, STP55NF06, STP55NF06FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 Doc ID 7544 Rev 11

STB55NF06, STP55NF06, STP55NF06FP Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, TO-220FP D2PAK V Drain-source voltage 60 V DS V Gate- source voltage ± 20 V GS I Drain current (continuous) at T = 25 °C 50 50(1) A D C I Drain current (continuous) at T = 100 °C 35 35(1) A D C I (2) Drain current (pulsed) 200 200(1) A DM P Total dissipation at T = 25 °C 110 30 W tot C Derating factor 0.73 0.20 W/°C E (3) Single pulse avalanche energy 340 mJ AS dv/dt (4) Peak diode recovery voltage slope 7 V/ns V Insulation withstand voltage (DC) 2500 V ISO T Storage temperature stg -55 to 175 °C T Max. operating junction temperature j 1. Refer to soa for the max allowable current value on FP-type due to Rth value 2. Pulse width limited by safe operating area. 3. Starting Tj = 25 °C, V = 30 V, I =25 A DD D 4. I ≤ 50 A, di/dt ≤ 400 A/µs, V ≤ V , Tj ≤ T SD DD (BR)DSS JMAX Table 3. Thermal data Value Symbol Parameter Unit D2PAK TO-220 TO-220FP R Thermal resistance junction-case max 1.36 5 °C/W thj-case R Thermal resistance junction-ambient max 62.5 °C/W thj-amb Doc ID 7544 Rev 11 3/19

Electrical characteristics STB55NF06, STP55NF06, STP55NF06FP 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 250 µA, V =0 60 V (BR)DSS breakdown voltage D GS Zero gate voltage V = 60 V 1 µA I DS DSS drain current (V = 0) V = 60 V,@ T = 125 °C 10 µA GS DS J Gate-body leakage I V = ± 20 V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 2 3 4 V GS(th) DS GS D Static drain-source R V = 10 V, I = 27.5 A 0.015 0.018 Ω DS(on) on-resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 1300 pF Ciss Output capacitance VDS = 25 V, f = 1MHz, - 300 pF Coss Reverse transfer VGS = 0 105 pF rss capacitance t Turn-on delay time 20 ns d(on) V = 30 V, I = 27.5 A t Rise time DD D 50 ns r R =4.7 Ω V = 10 V - t Turn-off delay time G GS 36 ns d(off) (see Figure15) t Fall time 15 ns f Q Total gate charge V = 48 V, I = 55 A, 44.5 60 nC g DD D Q Gate-source charge V = 10 V - 10.5 nC gs GS Q Gate-drain charge (see Figure16) 17.5 nC gd 4/19 Doc ID 7544 Rev 11

STB55NF06, STP55NF06, STP55NF06FP Electrical characteristics Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current I 50 A SD Source-drain current - I (1) 200 A SDM (pulsed) V (2) Forward on voltage I = 50 A, V = 0 - 1.5 V SD SD GS I = 50 A, t Reverse recovery time SD 75 ns rr di/dt = 100 A/µs, Q Reverse recovery charge - 170 nC rr V = 30 V, T = 150 °C I Reverse recovery current DD j 4.5 A RRM (see Figure17) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 7544 Rev 11 5/19

Electrical characteristics STB55NF06, STP55NF06, STP55NF06FP 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, Figure 3. Thermal impedance for TO-220, D²PAK D²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance TO-220FP Figure 6. Output characterisics Figure 7. Transfer characteristics 6/19 Doc ID 7544 Rev 11

STB55NF06, STP55NF06, STP55NF06FP Electrical characteristics Figure 8. Transconductance Figure 9. Static drain-source on-resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs vs temperature temperature Doc ID 7544 Rev 11 7/19

Electrical characteristics STB55NF06, STP55NF06, STP55NF06FP Figure 14. Source-drain diode forward characteristics 8/19 Doc ID 7544 Rev 11

STB55NF06, STP55NF06, STP55NF06FP Test circuit 3 Test circuit Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 7544 Rev 11 9/19

Package mechanical data STB55NF06, STP55NF06, STP55NF06FP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 7. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° 10/19 Doc ID 7544 Rev 11

STB55NF06, STP55NF06, STP55NF06FP Package mechanical data Figure 21. D²PAK (TO-263) drawing 0079457_T Figure 22. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimensions are in millimeters Doc ID 7544 Rev 11 11/19

Package mechanical data STB55NF06, STP55NF06, STP55NF06FP Table 8. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 12/19 Doc ID 7544 Rev 11

STB55NF06, STP55NF06, STP55NF06FP Package mechanical data Figure 23. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 7544 Rev 11 13/19

Package mechanical data STB55NF06, STP55NF06, STP55NF06FP Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 14/19 Doc ID 7544 Rev 11

STB55NF06, STP55NF06, STP55NF06FP Package mechanical data Figure 24. TO-220FP drawing 7012510_Rev_K_B Doc ID 7544 Rev 11 15/19

Packaging mechanical data STB55NF06, STP55NF06, STP55NF06FP 5 Packaging mechanical data Table 10. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 16/19 Doc ID 7544 Rev 11

STB55NF06, STP55NF06, STP55NF06FP Packaging mechanical data Figure 25. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 26. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 Doc ID 7544 Rev 11 17/19

Revision history STB55NF06, STP55NF06, STP55NF06FP 6 Revision history T able 11. Document revision history Date Revision Changes 19-Oct-2005 7 Preliminary document 02-Dec-2005 8 New datasheet according to PCN MLD-PMT/05/1115 28-Mar-2006 9 Inserted ecopack indication 26-Jun-2006 10 New template, no content change Removed part number STB55NF06-1 in I²PAK package Section4: Package mechanical data and Section5: Packaging 25-May-2012 11 mechanical data have been updated Minor text changes 18/19 Doc ID 7544 Rev 11

STB55NF06, STP55NF06, STP55NF06FP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 7544 Rev 11 19/19

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