STW34NM60N Ω N-channel 600 V, 0.092 typ., 31.5 A MDmesh™ II Power MOSFETs in a TO-247 package Datasheet - production data Features Order code V R I P DSS DS(on) D TOT STW34NM60N 600 V 0.105 Ω 31.5 A 250 W • 100% avalanche tested • Low input capacitance and gate charge (cid:22) • Low gate input resistance (cid:21) (cid:20) Applications (cid:55)(cid:50)(cid:16)(cid:21)(cid:23)(cid:26) • Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of (cid:39)(cid:11)(cid:21)(cid:15)(cid:3)(cid:55)(cid:36)(cid:37)(cid:12) MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high (cid:42)(cid:11)(cid:20)(cid:12) efficiency converters. (cid:54)(cid:11)(cid:22)(cid:12) (cid:36)(cid:48)(cid:19)(cid:20)(cid:23)(cid:26)(cid:24)(cid:89)(cid:20) Table 1. Device summary Order codes Marking Packages Packaging STW34NM60N 34NM60N TO-247 Tube March 2015 DocID027675 Rev 2 1/12 This is information on a product in full production. www.st.com 12

Contents STW34NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 DocID027675 Rev 2

STW34NM60N Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 600 V DS V Gate-source voltage ± 25 V GS I Drain current (continuous) at T = 25 °C 31.5 A D C I Drain current (continuous) at T = 100 °C 20 A D C I (1) Drain current (pulsed) 126 A DM P Total dissipation at T = 25 °C 250 W TOT C Max current during repetitive or single I pulse avalanche 7 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 345 mJ AS (starting T = 25 °C, I =I , V = 50 V) J D AS DD dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns T Storage temperature -55 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Pulse width limited by safe operating area. 2. I ≤ 31.5 A, di/dt ≤ 400 A/µs, V peak ≤ V , V = 80% V SD DS (BR)DSS DD (BR)DSS 3. V ≤ 480 V DS Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 0.5 thj-case °C/W R Thermal resistance junction-amb max 50 thj-amb DocID027675 Rev 2 3/12

Electrical characteristics STW34NM60N 2 Electrical characteristics (T = 25 °C unless otherwise specified). CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 1 mA 600 V (BR)DSS voltage (V = 0) D GS I Zero gate voltage drain VDS = 600 V 1 µA DSS current (VGS = 0) VDS = 600 V, Tc=125 °C 100 µA Gate body leakage current I V = ± 25 V ±100 nA GSS (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 2 3 4 V GS(th) DS GS D Static drain-source on- R V = 10 V, I = 14.5 A 0.092 0.105 Ω DS(on) resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance - 2722 - pF iss C Output capacitance - 173 - pF oss V =100 V, f=1 MHz, V =0 DS GS Reverse transfer C - 1.75 - pF rss capacitance Equivalent capacitance time C (1) V = 0, V = 0 to 480 V - 458 - pF oss eq. related GS DS t Turn-on delay time - 18 - ns d(on) V = 300 V, I = 15.75 A, t Rise time DD D - 36 - ns r R =4.7 Ω, V =10 V G GS t Turn-off delay time - 104 - ns d(off) (see Figure19 and 14) t Fall time - 73 - ns f Q Total gate charge - 84 - nC g V = 480 V, I = 31.5 A DD D Q Gate-source charge V =10 V - 14 - nC gs GS (see Figure15) Q Gate-drain charge - 45 - nC gd f = 1 MHz, gate DC Bias=0 R Intrinsic gate resistance test signal level=20 mV - 2.9 - Ω G open drain 1. C . is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq oss DS increases from 0 to 80% V DSS 4/12 DocID027675 Rev 2

STW34NM60N Electrical characteristics Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current - 31.5 A SD I (1) Source-drain current (pulsed) - 126 A SDM V (2) Forward on voltage I = 31.5 A, V =0 - 1.6 V SD SD GS t Reverse recovery time - 412 ns rr I = 31.5 A, V = 60 V SD DD Q Reverse recovery charge di/dt = 100 A/µs, - 8 µC rr (see Figure16) I Reverse recovery current - 39 A RRM t Reverse recovery time I = 31.5 A,V = 60 V - 490 ns rr SD DD di/dt=100 A/µs, Q Reverse recovery charge - 10 µC rr T=150 °C j I Reverse recovery current (see Figure16) - 43 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. DocID027675 Rev 2 5/12

Electrical characteristics STW34NM60N 2.1 Electrical characteristics (curves) Fig u re 2. Safe operating area Figure 3. Thermal impedance ID AM15707v1 (A) Tj=150°C Tc=25°C Single pulse 100 10µs 10 Operatmiitoen di n bty hism aaxr eRa DiSs(on) 110m0sµs Li 10ms 1 0.1 0.1 1 10 100 VDS(V) Figu r e 4. Output characteristics Figure 5. Transfer characteristics AM09020v1 AM09021v1 ID(A) ID(A) 80 VGS=10V 80 VDS=20V 70 70 60 60 6V 50 50 40 40 30 30 20 20 5V 10 10 0 0 0 5 10 15 20 25 30 VDS(V) 0 2 4 6 8 VGS(V) Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance V(VGS) AMV1D5S70(1Vv1) RDS((oΩn)) AM15702v1 VGS=10V 12 VDS VDD=480V ID=31.5A 500 0.096 10 400 0.094 8 300 0.092 6 200 0.09 4 2 100 0.088 0 0 0.086 0 20 40 60 80 Qg(nC) 0 5 10 15 20 25 30 ID(A) 6/12 DocID027675 Rev 2

STW34NM60N Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy C AM09024v1 Eoss AM09025v1 (pF) (µJ) 10000 Ciss 2 1000 Coss 100 1 10 Crss 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 VDS(V) Figure 10. Normalized gate threshold voltage vs Figure 11. Normalized on-resistance vs temperature temperature VGS(th) AM09026v1 RDS(on) AM15703v1 (norm) ID=250µA (norm) 2.1 ID=14.5A 1.10 1.9 1.00 1.7 1.5 0.90 1.3 0.80 1.1 0.9 0.70 0.7 0.60 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Normalized B vs temperature Figure 13. Source-drain diode forward VDSS characteristics VDS AM15704v1 VSD AM15705v1 (norm) ID=1mA (V) 1.07 1.4 TJ=-50°C 1.05 1.2 1.03 1 TJ=25°C 1.01 0.8 0.99 0.6 TJ=150°C 0.97 0.4 0.95 0.2 0.93 0 -50 -25 0 25 50 75 100 TJ(°C) 0 5 10 15 20 25 30 ISD(A) DocID027675 Rev 2 7/12

Test circuits STW34NM60N 3 Test circuits Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test circuit switching and diode recovery times L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 8/12 DocID027675 Rev 2

STW34NM60N Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 TO-247 package information Figure 20. TO-247 drawing 0075325_H DocID027675 Rev 2 9/12

Package information STW34NM60N Table 7. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 10/12 DocID027675 Rev 2

STW34NM60N Revision history 5 Revision history Table 8. Document revision history Date Revision Changes 25-Mar-2015 1 Initial release. Updated Figure2: Safe operating area and Figure3: Thermal 30-Mar-2015 2 impedance. DocID027675 Rev 2 11/12

STW34NM60N IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 12/12 DocID027675 Rev 2

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