STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Ω N-channel 650 V, 0.160 typ., 18 A MDmesh™ V Power MOSFET 2 2 in D PAK, I PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB TAB V @ R Order codes DS DS(on) I T max D 2 Jmax STB20N65M5 1 3 123 STI20N65M5 D2PAK I2PAK 710 V 0.19 Ω 18 A STP20N65M5 TAB STW20N65M5 ■ Worldwide best R * area DS(on) 3 ■ Higher V rating and high dv/dt capability 2 3 DSS 1 2 1 ■ Excellent switching performance TO-220 TO-247 ■ 100% avalanche tested Figure 1. Internal schematic diagram Applications ■ Switching applications (cid:36)(cid:8)(cid:18)(cid:12)(cid:0)(cid:52)(cid:33)(cid:34)(cid:9) Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative (cid:39)(cid:8)(cid:17)(cid:9) proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- (cid:51)(cid:8)(cid:19)(cid:9) resistance, which is unmatched among silicon- based Power MOSFETs, making it especially (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging STB20N65M5 D2PAK Tape and reel STI20N65M5 I2PAK 20N65M5 STP20N65M5 TO-220 Tube STW20N65M5 TO-247 February 2013 Doc ID 022865 Rev 2 1/21 This is information on a product in full production. www.st.com 21

Contents STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 Doc ID 022865 Rev 2

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Electrical ratings 1 Electrical ratings T able 2. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage ± 25 V GS I Drain current (continuous) at T = 25 °C 18 A D C I Drain current (continuous) at T = 100 °C 11.3 A D C I (1) Drain current (pulsed) 72 A DM P Total dissipation at T = 25 °C 130 W TOT C dv/dt (1) Peak diode recovery voltage slope 15 V/ns T Storage temperature - 55 to 150 °C stg T Max. operating junction temperature 150 °C j 1. I ≤ 18 A, di/dt ≤ 400 A/µs; V peak < V , V =400 V SD DS (BR)DSS DD T able 3. Thermal data Value Symbol Parameter I2PAK, Unit D2PAK TO-247 TO-220 R Thermal resistance junction-case max 0.96 °C/W thj-case R Thermal resistance junction-ambient max 62.5 50 °C/W thj-amb R (1) Thermal resistance junction-pcb max 30 °C/W thj-pcb 1. When mounted on 1 inch² FR-4, 1 Oz copper board. T able 4. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetetive or not I 4 A AR repetetive (pulse width limited by T ) jmax Single pulse avalanche energy (starting E 270 mJ AS t=25°C, I = I ; V =50 V) j d AR dd Doc ID 022865 Rev 2 3/21

Electrical characteristics STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 2 Electrical characteristics (T = 25 °C unless otherwise specified) C Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 1 mA, V = 0 650 V (BR)DSS breakdown voltage D GS Zero gate voltage V = 650 V 1 µA I DS DSS drain current (V = 0) V = 650 V, T =125 °C 100 µA GS DS C Gate-body leakage I V = ± 25 V ± 100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 3 4 5 V GS(th) DS GS D Static drain-source R V = 10 V, I = 9 A 0.160 0.19 Ω DS(on) on-resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 1434 pF Ciss Output capacitance VDS = 100 V, f = 1 MHz, - 38 - pF Coss Reverse transfer VGS = 0 3.7 pF rss capacitance Equivalent C (1) capacitance time - 118 - pF o(tr) related V = 0 to 520 V, V = 0 DS GS Equivalent C (2) capacitance energy - 35 - pF o(er) related Intrinsic gate R f = 1 MHz open drain - 3.5 - Ω G resistance Q Total gate charge V = 520 V, I = 9 A, 36 nC g DD D Q Gate-source charge V = 10 V - 7.5 - nC gs GS Q Gate-drain charge (see Figure18) 18 nC gd 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C when oss V increases from 0 to 80% V DS DSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V increases from 0 to 80% V DS DSS 4/21 Doc ID 022865 Rev 2

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(v) Voltage delay time VDD = 400 V, ID = 12 A, 43 ns tr(v) Voltage rise time RG = 4.7 Ω, VGS = 10 V - 7.5 - ns tf(i) Current fall time (see Figure19 and 7.5 ns t Crossing time Figure22) 11.5 ns c(off) Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 18 A SD - I (1) Source-drain current (pulsed) 72 A SDM V (2) Forward on voltage I = 18 A, V = 0 - 1.5 V SD SD GS t Reverse recovery time 288 ns rr I = 18 A, di/dt = 100 A/µs Q Reverse recovery charge SD - 4 µC rr V = 100 V (see Figure22) I Reverse recovery current DD 27 A RRM t Reverse recovery time I = 18 A, di/dt = 100 A/µs 342 ns rr SD Q Reverse recovery charge V = 100 V, T = 150 °C - 4.7 µC rr DD j I Reverse recovery current (see Figure22) 28 A RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022865 Rev 2 5/21

Electrical characteristics STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK, Figure 3. Thermal impedance for D²PAK, I²PAK, TO-220 I²PAK, TO-220 ID AM15584v1 (A) 10 Operatimiotne id n btyh ism aarx eaR iDsS(on) 11000µµss Li 1ms 1 Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 4. S afe operating area for TO-247 Figure 5. Thermal impedance for TO-247 ID AM15586v1 (A) 10 Operatimiotne id n btyh ism aarx eaR iDsS(on) 11000µµss Li 1ms 1 Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 6. O utput characteristics Figure 7. Transfer characteristics AM15587v1 AM15588v1 ID ID (A) VGS= 9, 10 V (A) 40 40 VDS= 25 V 35 35 VGS= 8 V 30 30 25 25 20 VGS= 7 V 20 15 15 10 10 5 VGS= 6 V 5 0 0 0 5 10 15 20 25VDS(V) 3 4 5 6 7 8 9 VGS(V) 6/21 Doc ID 022865 Rev 2

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance VGS AM15589v1 RDS(on) AM15590v1 (V) VDS (Ω) VDS VDD=520V (V) 0.195 12 ID=9A 500 VGS=10V 0.185 10 400 0.175 8 300 0.165 6 0.155 200 4 0.145 2 100 0.135 0 0 0.125 0 10 20 30 40 Qg(nC) 0 5 10 15 ID(A) Figure 10. Capacitance variations Figure 11. Output capacitance stored energy C AM15591v1 Eoss AM15592v1 (pF) (µJ) 7 10000 6 Ciss 5 1000 4 100 3 Coss 2 10 1 Crss 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V) Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs vs temperature temperature VGS(th) AM05459v1 RDS(on) AM05460v1 (norm) (norm) 1.10 2.1 ID = 250 µA VGS= 10V VDS = VGS 1.9 ID= 9 A 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) Doc ID 022865 Rev 2 7/21

Electrical characteristics STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Figure 14. Normalized B vs temperature Figure 15. Drain-source diode forward VDSS characteristics VDS AM10399v1 VSD AM05461v1 (norm) (V) TJ=-50°C 1.08 ID = 1mA 1.2 1.06 1.0 1.04 1.02 0.8 TJ=25°C 1.00 0.6 0.98 TJ=150°C 0.4 0.96 0.2 0.94 0.92 0 -50 -25 0 25 50 75 100 TJ(°C) 0 10 20 30 40 50 ISD(A) Figure 16. S witching losses vs gate resistance (1) AM15593v1 E(μJ) VDD=400V Eon 250 VGS=10V ID=12A 200 150 Eoff 100 50 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/21 Doc ID 022865 Rev 2

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Test circuits 3 Test circuits Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit resistive load (cid:54)(cid:36)(cid:36) (cid:17)(cid:18)(cid:54) (cid:20)(cid:23)(cid:75) (cid:17)(cid:75) (cid:17)(cid:16)(cid:16)(cid:78)(cid:38) (cid:50)(cid:44) (cid:18)(cid:18)(cid:16)(cid:16) (cid:19)(cid:14)(cid:19) (cid:38) (cid:38) (cid:54)(cid:36)(cid:36) (cid:41)(cid:39)(cid:29)(cid:35)(cid:47)(cid:46)(cid:51)(cid:52) (cid:54)(cid:36) (cid:54)(cid:73)(cid:29)(cid:18)(cid:16)(cid:54)(cid:29)(cid:54)(cid:39)(cid:45)(cid:33)(cid:56) (cid:17)(cid:16)(cid:16) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:54)(cid:39)(cid:51) (cid:18)(cid:18)(cid:16)(cid:16) (cid:50)(cid:39) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:38) (cid:18)(cid:14)(cid:23)(cid:75) (cid:54)(cid:39) (cid:48)(cid:55) (cid:20)(cid:23)(cid:75) (cid:17)(cid:75) (cid:48)(cid:55) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:22)(cid:24)(cid:86)(cid:17) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:22)(cid:25)(cid:86)(cid:17) Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit (cid:44) (cid:33) (cid:33) (cid:33) (cid:36) (cid:38)(cid:33)(cid:51)(cid:52) (cid:44)(cid:29)(cid:17)(cid:16)(cid:16) (cid:40) (cid:54)(cid:36) (cid:39) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:36)(cid:41)(cid:47)(cid:36)(cid:37) (cid:18)(cid:18)(cid:16)(cid:16) (cid:19)(cid:14)(cid:19) (cid:38) (cid:38) (cid:54)(cid:36)(cid:36) (cid:51) (cid:34) (cid:19)(cid:14)(cid:19) (cid:17)(cid:16)(cid:16)(cid:16) (cid:34) (cid:34) (cid:38) (cid:38) (cid:18)(cid:21) (cid:36) (cid:54)(cid:36)(cid:36) (cid:41)(cid:36) (cid:39) (cid:50)(cid:39) (cid:51) (cid:54)(cid:73) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:48)(cid:87) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:16)(cid:86)(cid:17) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:17)(cid:86)(cid:17) Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform (cid:54)(cid:8)(cid:34)(cid:50)(cid:9)(cid:36)(cid:51)(cid:51) Inductive Load Turn-off Id (cid:54)(cid:36) 90%Vds 90%Id td(v) (cid:41)(cid:36)(cid:45) Vgs 90%Vgs oonn (cid:41)(cid:36) Vgs(I(t)))) (cid:54)(cid:36)(cid:36) (cid:54)(cid:36)(cid:36) 10%Vds 10%Id Vds tr(v) tf(i) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:18)(cid:86)(cid:17) tc(off) AM05540v1 Doc ID 022865 Rev 2 9/21

Package mechanical data STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/21 Doc ID 022865 Rev 2

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Package mechanical data Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° Doc ID 022865 Rev 2 11/21

Package mechanical data STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Figure 23. D²PAK (TO-263) drawing 0079457_T Figure 24. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters 12/21 Doc ID 022865 Rev 2

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Package mechanical data Table 10. I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 25. I²PAK (TO-262) drawing 0004982_Rev_H Doc ID 022865 Rev 2 13/21

Package mechanical data STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 14/21 Doc ID 022865 Rev 2

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Package mechanical data Figure 26. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 022865 Rev 2 15/21

Package mechanical data STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Table 12. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 16/21 Doc ID 022865 Rev 2

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Package mechanical data Figure 27. TO-247 drawing 0075325_G Doc ID 022865 Rev 2 17/21

Packaging mechanical data STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 5 Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 18/21 Doc ID 022865 Rev 2

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Packaging mechanical data Figure 28. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 29. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 Doc ID 022865 Rev 2 19/21

Revision history STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 6 Revision history T able 14. Document revision history Date Revision Changes 06-Mar-2012 1 First release. – The part numbers STF20N65M5 and STFI20N65M5 have been moved to a separate datasheet. – Added: part numbers STB20N65M5 and STI20N65M5 – Modified: note1 on Table2, Table4 values and typical values of 01-Feb-2013 2 Table5, 6, 7, 8 – Added: R and note1 on Table3 thj-pcb – Updated: Section4: Package mechanical data – Added: Section2.1: Electrical characteristics (curves) 20/21 Doc ID 022865 Rev 2

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 022865 Rev 2 21/21

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