SiB417AEDK Vishay Siliconix P-Channel 1.2 V (G-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () Max. ID (A)g Qg (Typ.) (cid:129) Thermally Enhanced PowerPAK® 0.032 at VGS = - 4.5 V - 9a SC-75 Package 0.045 at VGS = - 2.5 V - 9a - Small Footprint Area - 8 0.063 at VGS = - 1.8 V - 9a 11.3 nC - Low On-Resistance 0.120 at VGS = - 1.5 V - 8.8 (cid:129) 100 % Rg Tested (cid:129) Typical ESD Protection 2500 V 0.230 at VGS = - 1.2 V - 6.4 (cid:129) Material categorization: For definitions of compliance PowerPAK SC-75-6L-Single please see www.vishay.com/doc?99912 1 APPLICATIONS D 2 (cid:129) Load Switch for Portable Devices, S D 3 Smart Phones, and Tablet PCs G - Low Voltage Drop D 6 - Space Savings D S 5 1.60 mm S 1.60 mm Marking Code G 4 B N X Part # code Ordering Information: X X X Lot Traceability D SiB417AEDK-T1-GE3 (Lead (Pb)-free and Halogen-free) and Date code P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS - 8 V Gate-Source Voltage VGS ± 5 TC = 25 °C - 9a Continuous Drain Current (TJ = 150 °C) TTCA == 2750 °°CC ID - 7- .92ab, c TA = 70 °C - 5.7b, c A Pulsed Drain Current (t = 300 µs) IDM - 15 Continuous Source-Drain Diode Current TTCA == 2255 °°CC IS - -2 9ba, c T = 25 °C 13 C T = 70 °C 8.4 Maximum Power Dissipation TCA = 25 °C PD 2.4b, c W TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t  5 s RthJA 41 51 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 7.5 9.5 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 °C/W. g. Based on T = 25 °C. C Document Number: 63899 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-2333-Rev. A, 01-Oct-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiB417AEDK Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 8 V VDS Temperature Coefficient VDS/TJ - 6.1 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ 2.1 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.35 - 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V ± 20 VDS = - 8 V, VGS = 0 V - 1 µA Zero Gate Voltage Drain Current IDSS VDS = - 8 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 4.5 V - 15 A VGS = - 4.5 V, ID = - 3 A 0.0265 0.0320 VGS = - 2.5 V, ID = - 3 A 0.0360 0.0450 Drain-Source On-State Resistancea RDS(on) VGS = - 1.8 V, ID = - 1 A 0.0500 0.0630  VGS = - 1.5 V, ID = - 0.5 A 0.0600 0.1200 VGS = - 1.2 V, ID = - 0.5 A 0.1000 0.2300 Forward Transconductancea gfs VDS = - 4 V, ID = - 7.4 A 18 S Dynamicb Input Capacitance Ciss 878 Output Capacitance Coss VDS = - 4 V, VGS = 0 V, f = 1 MHz 415 pF Reverse Transfer Capacitance Crss 735 Total Gate Charge Qg VDS = - 4 V, VGS = - 5 V, ID = - 7.4 A 12.3 18.5 11.3 17 nC Gate-Source Charge Qgs VDS = - 4 V, VGS = - 4.5 V, ID = - 7.4 A 1.35 Gate-Drain Charge Qgd 3.42 Gate Resistance Rg f = 1 MHz 1.3 6.5 13  Turn-On Delay Time td(on) 19 29 Rise Time tr VDD = - 4 V, RL = 0.68  18 27 ns Turn-Off Delay Time td(off) ID  - 5.9 A, VGEN = - 4.5 V, Rg = 1  32 48 Fall Time tf 19 29 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 9 A Pulse Diode Forward Current ISM - 15 Body Diode Voltage VSD IS = - 5.9 A, VGS = 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr 32 48 ns Body Diode Reverse Recovery Charge Qrr 13 20 nC I = - 5.9 A, dI/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 14 ns Reverse Recovery Rise Time tb 18 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 63899 2 S12-2333-Rev. A, 01-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiB417AEDK Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 0.015 10-2 T = 25 °C J 10-3 0.012 A) A) 10-4 urrent (m 0.009 Current ( 10-5 TJ = 150 °C ate C 0.006 Gate 10-6 - GGSS I - GSS 10-7 TJ = 25 °C I 0.003 10-8 0.000 10-9 0 2 4 5 7 9 0 3 6 9 12 VGS - Gate-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Source Voltage vs. Gate Current Gate Source Voltage vs. Gate Current 15 1 V = 5V thru 2V GS 12 0.8 ent (A) 9 nt (A) 0.6 Curr VGS = 1.5 V urre I - Drain D 6 - Drain CD 0.4 TC = 25 °C I 3 0.2 T = 125 °C V = 1 V C GS T = - 55 °C C 0 0 0 0.5 1 1.5 2 0 0.25 0.5 0.75 1 1.25 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.2 1500 V = 1.2 V GS 1200 Ω) 0.15 Resistance ( 0.1 VGS = 1.5 V citance (pF) 900 Ciss R - On-DS(on) 0.05 VGS = 1.8 V VGS = 2.5 V C - Capa 600 Crss Coss 300 V = 4.5 V GS 0 0 0 3 6 9 12 15 0 2 4 6 8 V - Drain-to-Source Voltage (V) I - Drain Current (A) DS D On-Resistance vs. Drain Current and Gate Voltage Capacitance Document Number: 63899 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-2333-Rev. A, 01-Oct-12 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiB417AEDK Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 5 1.4 I = 3 A I = 7.4 A D V = 4.5 V D GS d) ce Voltage (V) 34 VDS = 2 V VDS = 4 V ance (Normalize 11..1247 VGS = 2.5 V ur st e-to-So 2 VDS = 6.4 V On-Resi 1.01 V - GatGS 1 R - DS(on) 0.88 0 0.75 0 3.5 7 10.5 14 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 0.120 I = 3 A D urce Current (A) 10 TJ = 150 °C On-Resistance (Ω) 00..006900 TJ = 125 °C I - SoS 1 T = 25 °C R - DS(on) 0.030 TJ = 25 °C J 0.1 0.000 0.0 0.3 0.6 0.9 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.7 20 I = 250 μA D 0.6 15 V) 0.5 (W) V (GS(th) 0.4 Power 10 5 0.3 0.2 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 T - Temperature (°C) Time (s) J Threshold Voltage Single Pulse Power, Junction-to-Ambient www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 63899 4 S12-2333-Rev. A, 01-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiB417AEDK Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 100 20 10 Limited by RDS(on)* 100 μs n Current (A) 1 11110 00m0 m ssm, s1s s Current (A) 1105 ai DC n Dr 0.1 ai - ID - DrD I 5 0.01 T = 25 °C A Single Pulse BVDSS Limited 0.001 0 0.1 1 10 0 25 50 75 100 125 150 VDS - Drain-to-Source Voltage (V) T - Case Temperature (°C) * V > minimum V at which R is specified C GS GS DS(on) Safe Operating Area, Junction-to-Case Current Derating** 1.5 16 1.2 12 W) 0.9 W) ( ( wer wer 8 Po 0.6 Po 4 0.3 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TA-AmbientTemperature(°C) TC-CaseTemperature(°C) Power Junction-to-Ambient Power Junction-to-Case ** The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max.) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63899 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-2333-Rev. A, 01-Oct-12 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiB417AEDK Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 1 Duty Cycle = 0.5 nt e Transiance 0.2 ctive mped 0.1 Notes: ed Effeermal I 0.1 0.05 PDM alizTh 0.02 t1 Norm 1. Duty Cycle,t 2D = tt12 Single Pulse 2. Per Unit Base = RthJA = 105 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 nt e Transiance ctive mped 0.2 ed Effeermal I 0.1 zh aliT 0.05 m or 0.02 N Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63899. www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 63899 6 S12-2333-Rev. A, 01-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix PowerPAK® SC75-6L e b e b PIN1 PIN2 PIN3 PIN1 PIN2 PIN3 L L D2 K4 K 2 1 E 1 1 E D1 3 E D1 D1 E E K K PIN6 PIN5 PIN4 PIN6 PIN5 PIN4 K3 K1 KK22 K2 K1 K2 BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL D A Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating E A1 C Z z DETAIL Z SINGLE PAD DUAL PAD DIM MILLIMETERS INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max A 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP K3 0.255 TYP 0.010 TYP K4 0.300 TYP 0.012 TYP L 0.15 0.25 0.35 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 T 0.03 0.08 0.13 0.001 0.003 0.005 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 www.vishay.com 06-Aug-07 1

Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.250 (0.01) 0.500 (0.02) 0.400 (0.016) 0.300 (0.012) 0.180 (0.007) 0.370 (0.015) (0.043) 0.620 (0.024) 1.700 (0.067) 1.100 2.000 (0.079) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 1 0.545 (0.021) 0.250 (0.01) 0.670 (0.026) 2.000 (0.079) Dimensions in mm/(Inches) Return to Index A P P L I C A T I O N N O T E Document Number: 70488 www.vishay.com Revision: 21-Jan-08 13

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