Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F D C 8 5 January 2008 5 N FDC855N N tm -C Single N-Channel, Logic Level, PowerTrench® MOSFET h a 30V, 6.1A, 27mΩ n n Features General Description e l , (cid:132) Max r = 27mΩ at V = 10V, I = 6.1A This N-Channel Logic Level MOSFET is an efficient solution for L DS(on) GS D o low voltage and battery powered applications. Utilizing Fairchild g (cid:132) Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A Semiconductor’s advanced PowerTrench® process, this device ic possesses minimized on-state resistance to optimize the power (cid:132) SuperSOTTM -6 package: small footprint (72% smaller than L consumption. They are ideal for applications where in-line power e standard SO-8; low profile (1mm thick). loss is critical. v e l (cid:132) RoHS Compliant Application , P (cid:132) Power Management in Notebook, Hard Disk Drive o w e r T r e n c h ® M S D D O D S D F E D D T SuperSOTTM-6 G D G S D Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25°C (Note 1a) 6.1 I A A D -Pulsed 20 Power Dissipation (Steady State) (Note 1a) 1.6 P W D Power Dissipation (Steady State) (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 30 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 78 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .855 FDC855N SuperSOT-6 7” 8 mm 3000 units ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDC855N Rev.C

F Electrical Characteristics T = 25°C unless otherwise noted D J C Symbol Parameter Test Conditions Min Typ Max Units 8 5 5 Off Characteristics N BV Drain to Source Breakdown Voltage I = 250µA, V = 0V 30 V N DSS D GS - ∆BV Breakdown Voltage Temperature C DSS I = 250µA, referenced to 25°C 24 mV/°C ∆T Coefficient D h J a IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 24V , T = 125°C 2510 µA nn C e IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA l, L o On Characteristics g i V Gate to Source Threshold Voltage V = V , I = 250µA 1.0 2.0 3.0 V c GS(th) GS DS D L ∆V Gate to Source Threshold Voltage GS(th) I = 250µA, referenced to 25°C -6 mV/°C e ∆TJ Temperature Coefficient D v e VGS = 10V, ID = 6.1A 20.7 27.0 l, rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 5.3A 28.2 36.0 mΩ P o V = 10V, I = 6.1A, T =125°C 30.1 39.3 GS D J w gFS Forward Transconductance VDD = 10V, ID = 6.1A 20 S e r T Dynamic Characteristics r e n C Input Capacitance 493 655 pF iss V = 15V, V = 0V, c C Output Capacitance DS GS 108 145 pF h oss f = 1MHz ® Crss Reverse Transfer Capacitance 62 95 pF M Rg Gate Resistance f = 1MHz 1.0 Ω O S Switching Characteristics F E td(on) Turn-On Delay Time 6 12 ns T V = 15V, I = 6.1A, t Rise Time DD D 2 10 ns r V = 10V, R = 6Ω t Turn-Off Delay Time GS GEN 14 23 ns d(off) t Fall Time 2 10 ns f Q Total Gate Charge at 10V V = 0V to 10V 9.2 13 nC g GS V = 15V, Q Total Gate Charge at 5V V = 0V to 5V DD 4.9 7.0 nC g GS I = 6.1A Q Gate to Source Charge D 1.7 nC gs Q Gate to Drain “Miller” Charge 3.1 nC gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage V = 0V, I = 1.3A (Note 2) 0.80 1.2 V SD GS S t Reverse Recovery Time 17 31 ns rr I = 6.1A, di/dt = 100A/µs Q Reverse Recovery Charge F 6 12 nC rr Notes: 1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a. 78°C/W when mounted on a b. 156°C/W when mounted on a 1 in2 pad of 2 oz copper. minimum pad of 2 oz copper. 2: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. ©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDC855N Rev.C

F D Typical Characteristics C TJ = 25°C unless otherwise noted 8 5 5 20 4.0 N VGS = 4.5V E PULSE DURATION = 80µs N VGS = 4.0V NC 3.5 DUTY CYCLE = 0.5%MAX - AIN CURRENT (A) 11268 VVGGSS == 61V0V VGS = 3.5V NORMALIZED OURCE ON-RESISTA 223...050 VGS = 3.5V VGS = 4.0V VGS = 4.5V Channel, Lo R S 1.5 D O g , ID 04 PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AµXs DRAIN T 01..50 VGS = 6V VGS = 10V ic Lev 0 1 2 3 4 0 4 8 12 16 20 e VDS, DRAIN TO SO URCE VOLTAGE (V) ID, DRAIN CURR ENT(A) l, P Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance o w vs Drain Current and Gate Voltage e r T 1.6 60 r e NORMALIZED O SOURCE ON-RESISTANCE 111...024 VIDG S= =6 .110AV rDRAIN TO ,DS(on)()CE ON-RESISTANCE mΩ 345000 PDIDUU =LT 6SY.E 1CA DYUCRLTEAJ T==I O122%N5 Mo=C A3X00µs nch MOSFET® T 0.8 R RAIN SOU TJ = 25oC D 0.6 20 -75 -50 -25 0 25 50 75 100 125 150 3 4 5 6 7 8 9 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 20 20 PULSE DURATION = 80µs A) 10 VGS = 0V DUTY CYCLE = 0.5%MAX T ( 16 N E T (A) VDS = 10V URR 1 AIN CURREN 128 RSE DRAIN C 0.1 TJ = 150oC TJ = 25oC , DRD 4 TJ = 150oC TJ = 25oC REVE 0.01 TJ = -55oC I TJ = -55oC I, S 0 0.001 1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDC855N Rev.C

F D Typical Characteristics C T = 25°C unless otherwise noted J 8 5 5 10 1000 N V) ID = 6.1A Ciss N GE( 8 -C A T h SOURCE VOL 46 VDD = 10V VDD = 20VVDD = 15V CITANCE (pF) 100 Coss annel, GATE TO 2 CAPA f = 1MHz Crss Logic , S VGS = 0V L G V 0 20 e 0 3 6 9 12 0.1 1 10 30 v e Qg, GATE CH ARGE(nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) l, P Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain o to Source Voltage w e r T 30 100 r e A) 10 100µs ER (W) VGS = 10V SRIθNJAG =L E1 5P6UoCL/SWE nch CURRENT ( 1 THIS AREA IS 110mmss SIENT POW 10 TA = 25oC MOS® AIN LIMITED BY rDS(on) 100ms RAN FE I, DRD00.0.11 STRTJAIθN J ==AG M2=L5 AE1oX C5P 6RUoCAL/STWEED 1DsC , PPEAK T()PK 0.15 T 0.01 0.1 1 10 100 10-3 10-2 10-1 1 10 100 1000 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WID TH (s) Figure 9. Forward Bias Safe Figure 10. Single Pulse Maximum Operating Area Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER 1 D = 0.5 AL 0.2 M A 0.1 ERZJθ 0.05 ALIZED TH PEDANCE, 0.1 00..0021 PDM t1 MM RI t2 NO SINGLE PULSE NDOUTTYE SF:ACTOR: D = t1/t2 RθJA = 156oC/W PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 10-3 10-2 10-1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDC855N Rev.C

F D Dimensional Outline and Pad Layout C 8 5 5 N N - C h a n n e l , L o g i c L e v e l , P o w e r T r e n c h ® M O S F E T ©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDC855N Rev.C

F D C 8 5 5 N N - C TRADEMARKS h The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global a n subsidianries, and is not intended to be an exhaustive list of all such trademarks. n ACEx® FPS™ PDP-SPM™ SupreMOS™ e l Build it Now™ FRFET® Power220® SyncFET™ , L CorePLUS™ Global Power ResourceSM POWEREDGE® ® o CCRTLO™SSVOLT™ GGrreeeenn FFPPSS™™ e-Series™ PPoowweerr-TSrePnMc™h® The Power Franchise® gic Current Transfer Logic™ GTO™ Programmable Active Droop™ L EcoSPARK® i-Lo™ QFET® tm e TinyBoost™ v EZSWITCH™ * IntelliMAX™ QS™ e TinyBuck™ ™ ISOPLANAR™ QT Optoelectronics™ TinyLogic® l, MegaBuck™ Quiet Series™ P ® TINYOPTO™ o MICROCOUPLER™ RapidConfigure™ TinyPower™ w Fairctmhild® MicroFET™ SMART START™ TinyPWM™ e Fairchild Semiconductor® MicroPak™ SPM® r TinyWire™ T FACT Quiet Series™ MillerDrive™ STEALTH™ r FACT® Motion-SPM™ SuperFET™ µUSHeCrD®es™ en FAST® OPTOLOGIC® SuperSOT™-3 c FastvCore™ OPTOPLANAR® SuperSOT™-6 Ultra FRFET™ h UniFET™ ® FlashWriter® * ® SuperSOT™-8 VCX™ M tm O * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. S F E DISCLAIMER T FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, 2. A critical component in any component of a life support, device (a) are intended for surgical implant into the body or (b) or system whose failure to perform can be reasonably support or sustain life, and (c) whose failure to perform when expected to cause the failure of the life support device or properly used in accordance with instructions for use provided system, or to affect its safety or effectiveness. in the labeling, can be reasonably expected to result in a significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition This datasheet contains the design specifications for product development. Advance Information Formative or In Design Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be pub- Preliminary First Production lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves No Identification Needed Full Production the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontin- Obsolete Not In Production ued by Fairchild Semiconductor. The datasheet is printed for reference infor- mation only. Rev. I33 ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FDC855N Rev.C

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

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