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  • 型号: STP16NF06
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
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STP16NF06产品简介:

ICGOO电子元器件商城为您提供STP16NF06由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STP16NF06价格参考。STMicroelectronicsSTP16NF06封装/规格:晶体管 - FET,MOSFET - 单, 通孔 N 沟道 60V 16A(Tc) 45W(Tc) TO-220AB。您可以下载STP16NF06参考资料、Datasheet数据手册功能说明书,资料中有STP16NF06 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 60V 16A TO-220MOSFET N-Ch 60 Volt 16 Amp

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

16 A

Id-连续漏极电流

16 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STP16NF06STripFET™ II

数据手册

点击此处下载产品Datasheet

产品型号

STP16NF06

Pd-PowerDissipation

45 W

Pd-功率耗散

45 W

RdsOn-Drain-SourceResistance

100 mOhms

RdsOn-漏源导通电阻

100 mOhms

Vds-Drain-SourceBreakdownVoltage

60 V

Vds-漏源极击穿电压

60 V

Vgs-Gate-SourceBreakdownVoltage

+/- 20 V

Vgs-栅源极击穿电压

20 V

上升时间

18 ns

下降时间

6 ns

不同Id时的Vgs(th)(最大值)

4V @ 250µA

不同Vds时的输入电容(Ciss)

315pF @ 25V

不同Vgs时的栅极电荷(Qg)

13nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

100 毫欧 @ 8A,10V

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

TO-220AB

其它名称

497-2766-5

其它有关文件

http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1165/PF64703?referrer=70071840

典型关闭延迟时间

17 ns

功率-最大值

45W

包装

管件

单位重量

2.240 g

商标

STMicroelectronics

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-3

封装/箱体

TO-220-3

工厂包装数量

1000

晶体管极性

N-Channel

最大工作温度

+ 175 C

最小工作温度

- 55 C

标准包装

50

正向跨导-最小值

6.5 S

漏源极电压(Vdss)

60V

电流-连续漏极(Id)(25°C时)

16A (Tc)

系列

STP16NF06

通道模式

Enhancement

配置

Single

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PDF Datasheet 数据手册内容提取

STP16NF06 STP16NF06FP Ω N-channel 60V - 0.08 - 16A - TO-220/TO-220FP STripFET™ II Power MOSFET General features Type V R I DSS DS(on) D STP16NF06 60V <0.1Ω 16A STP16NF06FP 60V <0.1Ω 11A ■ Exceptional dv/dt capability 1 23 123 ■ Low gate charge at 100°C TO-220 TO-220FP ■ Application oriented characterization Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting Internal schematic diagram transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application Order codes Part number Marking Package Packaging STP16NF06 P16NF06 TO-220 Tube STP16NF06FP P16NF06 TO-220FP Tube February 2007 Rev 8 1/14 www.st.com 14

Contents STP16NF06 - STP16NF06FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14

STP16NF06 - STP16NF06FP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-220FP V Drain-source voltage (V = 0) 60 V DS GS V Gate- source voltage ± 20 V GS I Drain current (continuous) at T = 25°C 16 11(1) A D C I Drain current (continuous) at T = 100°C 11 7.5(1) A D C I (2) Drain current (pulsed) 64 44(1) A DM P Total dissipation at T = 25°C 45 25 W tot C Derating factor 0.3 0.17 W/°C dv/dt (3) Peak diode recovery voltage slope 20 V/ns E (4) Single pulse avalanche energy 130 mJ AS Avalanche current, repetitive or not- I 16 A AR repetitive V Insulation withstand voltage (DC) -- 2500 V ISO T Storage temperature stg -55 to 175 °C T Max. operating junction temperature j 1. Current limited by package’s thermal resistance 2. Pulse width limited by safe operating area. 3. I ≤ 16A, di/dt ≤ 200A/µs, V ≤ V , Tj ≤ T SD DD (BR)DSS JMAX 4. Starting T = 25 °C, I = 8A, V = 30V j D DD Table 2. Thermal data TO-220 TO-220FP Rthj-case Thermal resistance junction-case max 3.33 6 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W T Maximum lead temperature for soldering purpose 300 °C J 3/14

Electrical characteristics STP16NF06 - STP16NF06FP 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 250µA, V =0 60 V (BR)DSS breakdown voltage D GS V = max ratings Zero gate voltage DS 1 µA I V = max ratings, DSS drain current (V = 0) DS 10 µA GS T = 125°C C Gate-body leakage I V = ± 20V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250µA 2 4 V GS(th) DS GS D Static drain-source on R V = 10V, I = 8A 0.08 0.1 Ω DS(on) resistance GS D Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward g (1) V = 15V, I =8A 6.5 S fs transconductance DS D Input capacitance C 315 pF Ciss Output capacitance VDS = 25V, f = 1MHz, 70 pF Coss Reverse transfer VGS = 0 30 pF rss capacitance t Turn-on delay time 7 ns d(on) V = 30V, I = 8A t Rise time DD D 18 ns r R =4.7Ω V = 10V t Turn-off delay time G GS 17 ns d(off) (see Figure15) t Fall time 6 ns f Q Total gate charge V = 48V, I = 16A, 10 13 nC g DD D Q Gate-source charge V = 10V 3.5 nC gs GS Q Gate-drain charge (see Figure16) 3.5 nC gd 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/14

STP16NF06 - STP16NF06FP Electrical characteristics Table 5. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current I 16 A SD Source-drain current I (1) 64 A SDM (pulsed) V (2) Forward on voltage I = 16A, V = 0 1.3 V SD SD GS I = 15A, t Reverse recovery time SD 50 ns rr di/dt = 100A/µs, Q Reverse recovery charge 88 nC rr V = 30V, T = 150°C I Reverse recovery current DD j 3.5 A RRM (see Figure17) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/14

Electrical characteristics STP16NF06 - STP16NF06FP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characteristics Figure 6. Transfer characteristics 6/14

STP16NF06 - STP16NF06FP Electrical characteristics Figure 7. Transconductance Figure 8. Static drain-source on resistance Figure 9. Gate charge vs. gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs. vs. temperature temperature 7/14

Electrical characteristics STP16NF06 - STP16NF06FP Figure 13. Source-drain diode forward Figure 14. Normalized B vs. temperature VDSS characteristics 8/14

STP16NF06 - STP16NF06FP Test circuit 3 Test circuit Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/14

Package mechanical data STP16NF06 - STP16NF06FP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14

STP16NF06 - STP16NF06FP Package mechanical data TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 F F 1 G H G 2 F 1 2 3 L5 L2 L4 11/14

Package mechanical data STP16NF06 - STP16NF06FP TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 12/14

STP16NF06 - STP16NF06FP Revision history 5 Revision history T able 6. Revision history Date Revision Changes 09-Sep-2004 4 Preliminary version 28-Jun-2005 5 Complete version 21-Jul-2005 6 ECOPACK label inserted 09-Aug-2006 7 New template, no content change 20-Feb-2007 8 Typo mistake on page 1 13/14

STP16NF06 - STP16NF06FP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14

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