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STF7NM60N产品简介:

ICGOO电子元器件商城为您提供STF7NM60N由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STF7NM60N价格参考¥5.48-¥5.48。STMicroelectronicsSTF7NM60N封装/规格:晶体管 - FET,MOSFET - 单, N-Channel 600V 5A (Tc) 20W (Tc) Through Hole TO-220FP。您可以下载STF7NM60N参考资料、Datasheet数据手册功能说明书,资料中有STF7NM60N 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

MOSFET N-CH 600V 4.7A TO-220FPMOSFET N-Ch 600 V 4.7 A MDmesh 2nd Gen

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

5 A

Id-连续漏极电流

5 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STF7NM60NMDmesh™ II

数据手册

点击此处下载产品Datasheet

产品型号

STF7NM60N

Pd-PowerDissipation

20 W

Pd-功率耗散

20 W

Qg-GateCharge

12 nC

Qg-栅极电荷

12 nC

RdsOn-Drain-SourceResistance

900 mOhms

RdsOn-漏源导通电阻

900 mOhms

Vds-Drain-SourceBreakdownVoltage

600 V

Vds-漏源极击穿电压

600 V

Vgsth-Gate-SourceThresholdVoltage

3 V

Vgsth-栅源极阈值电压

3 V

不同Id时的Vgs(th)(最大值)

4V @ 250µA

不同Vds时的输入电容(Ciss)

363pF @ 50V

不同Vgs时的栅极电荷(Qg)

14nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

900 毫欧 @ 2.5A,10V

产品种类

Power MOSFET Transistors

供应商器件封装

TO-220FP

其它名称

497-10570-5

其它有关文件

http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1167/PF248282?referrer=70071840

功率-最大值

20W

包装

管件

商标

STMicroelectronics

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-5 整包

封装/箱体

TO-220FP-3

工厂包装数量

50

晶体管极性

N-Channel

最大工作温度

+ 150 C

标准包装

50

漏源极电压(Vdss)

600V

电流-连续漏极(Id)(25°C时)

5A (Tc)

系列

STF7NM60N

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STD7NM60N, STF7NM60N, STU7NM60N Datasheet N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code VDS RDS(on) max. ID Package STD7NM60N DPAK STF7NM60N 600 V 0.9 Ω 5 A TO-220FP STU7NM60N IPAK D(2, TAB) • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance G(1) Applications • Switching applications S(3) AM01475v1_noZen Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STD7NM60N STF7NM60N STU7NM60N DS6523 - Rev 5 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.

STD7NM60N, STF7NM60N, STU7NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, IPAK TO-220FP VDS Drain-source voltage 600 V VGS Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 5 5 (1) A ID Drain current (continuous) at TC = 100 °C 3 3 (1) A IDM (2) Drain current (pulsed) 20 20 (1) A PTOT Total dissipation at TC = 25 °C 45 20 W Insulation withstand voltage (RMS) from all three VISO leads to external heat-sink (t = 1 s, TC = 25 °C) 2.5 kV dv/dt (3) Peak diode recovery voltage slope 15 V/ns Tj Operating junction temperature range -55 to 150 °C Tstg Storage temperature range 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 5 A, di/dt ≤ 100 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220FP IPAK Rthj-case Thermal resistance junction-case 2.78 6.25 2.78 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 100 °C/W Rthj-pcb(1) Thermal resistance junction-pcb 50 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit IAS(1) Avalanche current, repetitive or not-repetitive 2 A EAS(2) Single pulse avalanche energy 119 mJ 1. Pulse width limited by Tj max. 2. Starting Tj = 25 °C, ID = IAS, VDD = 50 V. DS6523 - Rev 5 page 2/26

STD7NM60N, STF7NM60N, STU7NM60N Electrical characteristics 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V(BR)DSS breakdown voltage ID = 1 mA, VGS = 0 V 600 V Zero gate voltage drain VGS = 0 V, VDS = 600 V 1 µA IDSS current VGS = 0 V, VDS = 600 V, TC = 125 °C (1) 100 µA Gate body leakage IGSS current VDS = 0 V, VGS = ±20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V Static drain-source on RDS(on) resistance VGS = 10 V, ID = 2.5 A 0.8 0.9 Ω 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance 363 Coss Output capacitance VDS = 50 V, f = 1 MHz, VGS = 0 V - 24.6 - pF Reverse transfer Crss capacitance 1.1 Equivalent capacitance Coss eq. (1) time related VDS = 0 to 480 V, VGS = 0 V - 130 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5.4 - Ω Qg Total gate charge 14 VDD = 480 V, ID = 5 A, VGS = 0 to 10 V Qgs Gate-source charge (see Figure 14. Test circuit for gate charge - 2.7 - nC behavior) Qgd Gate-drain charge 7.7 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 2.5 A, 7 tr Rise time RG = 4.7 Ω, VGS = 10 V 10 - - ns td(off) Turn-off delay time (see Figure 13. Test circuit for resistive load 26 switching times and Figure 18. Switching tf Fall time time waveform) 12 DS6523 - Rev 5 page 3/26

STD7NM60N, STF7NM60N, STU7NM60N Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 5 - A Source-drain current ISDM (1) (pulsed) 20 VSD (2) Forward on voltage ISD = 5 A, VGS = 0 V - 1.3 V trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs 213 ns Qrr Reverse recovery charge VDD = 60 V (see Figure 15. Test circuit for - 1.5 μC inductive load switching and diode recovery IRRM Reverse recovery current times) 14 A trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs 265 ns Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C(see Figure 15. Test - 1.8 μC circuit for inductive load switching and IRRM Reverse recovery current diode recovery times) 14 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS6523 - Rev 5 page 4/26

STD7NM60N, STF7NM60N, STU7NM60N Electrical characteristics curves 2.1 Electrical characteristics curves Figure 2. Thermal impedance for DPAK and IPAK Figure 1. Safe operating area for DPAK and IPAK ID AM06474v1 0 OpeLriamtiitoen dinb ty himsaax reRaDiSs(on) 11100m0µsµss Tj=150°C 10ms -1 Tc=25°C Single puls -2 -1 0 2 DS Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP ID AM06475v1 K GC20940 101 100 OpeLriamtiitoen dinb ty himsaax reRaDiSs(on) 11100m0µsµss 10 -1 10ms 10 -2 Tj=150°C 10-1 Tc=25°C Single pulse 10-2 10 -3 10-1 100 101 102 DS 10 -4 10 -3 10 -2 10 -1 10 0 t p (s) Figure 5. Output characterisics Figure 6. Transfer characteristics AM06477v1 ID AM06478v1 ID(A) 9 VGS=10V 9 VDS=20V 6V 8 8 7 7 6 6 5 5 4 4 5V 3 3 2 2 1 1 0 0 0 10 20 40 VDS(V) 0 4 8 VGS(V) DS6523 - Rev 5 page 5/26

STD7NM60N, STF7NM60N, STU7NM60N Electrical characteristics curves Figure 7. Gate charge vs gate-source voltage Figure 8. Static drain-source on-resistance VGS AM06479v1 VDS RDS(on) AM06480v1 (V) (V) (Ohm) VDD=480V VGS=10V 12 0.88 ID=5A 500 VDS 0.86 10 400 0.84 8 300 0.82 6 0.80 200 4 0.78 100 2 0.76 0 0 0.74 0 2 4 6 8 10 12 14 16 Qg(nC) 0 1 2 3 4 5 ID(A) Figure 10. Normalized gate threshold voltage vs Figure 9. Capacitance variations temperature VGS(th) AM06483v1 (norm) 1.10 ID=250µA 103 1.00 102 0.90 101 0.80 100 0.70 10-1 100 101 102 -50 -25 0 25 50 75 100 TJ(°C) Figure 11. Normalized on-resistance vs temperature Figure 12. Normalized V(BR)DSS vs temperature RDS(on) AM06484v1 V(BR)DSS AM06485v1 (norm) (norm) 2.1 ID=2.5A 1.07 ID=1mA 1.9 1.05 1.7 1.03 1.5 1.01 1.3 0.99 1.1 0.97 0.9 0.7 0.95 0.5 0.93 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) DS6523 - Rev 5 page 6/26

STD7NM60N, STF7NM60N, STU7NM60N Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 47 kΩ 1 kΩ 100 nF RL 2200 3.3 + μF μF VDD VD VGS IG= CONST 100 Ω D.U.T. VGS RG D.U.T. pulse width 2200+ 2.7 kΩ VG pulse width μF 47 kΩ 1 kΩ AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit diode recovery times A A A L G DD.U.T. fdaiostde 100 µH VD 2200 3.3 25 Ω S B B B D µ3F.3 +1µ0F00 VDD ID +µF µF VDD G D.U.T. + RG S Vi D.U.T. _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton toff V(BR)DSS td(on) tr td(off) tf VD 90% 90% IDM ID 0 10% VDS 10% VDD VDD VGS 90% 0 10% AM01472v1 AM01473v1 DS6523 - Rev 5 page 7/26

STD7NM60N, STF7NM60N, STU7NM60N Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS6523 - Rev 5 page 8/26

STD7NM60N, STF7NM60N, STU7NM60N DPAK (TO-252) type A package information 4.1 DPAK (TO-252) type A package information Figure 19. DPAK (TO-252) type A package outline 0068772_A_25 DS6523 - Rev 5 page 9/26

STD7NM60N, STF7NM60N, STU7NM60N DPAK (TO-252) type A package information Table 8. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 5.10 5.25 E 6.40 6.60 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 1.00 R 0.20 V2 0° 8° DS6523 - Rev 5 page 10/26

STD7NM60N, STF7NM60N, STU7NM60N DPAK (TO-252) type C package information 4.2 DPAK (TO-252) type C package information Figure 20. DPAK (TO-252) type C package outline 0068772_C_25 DS6523 - Rev 5 page 11/26

STD7NM60N, STF7NM60N, STU7NM60N DPAK (TO-252) type C package information Table 9. DPAK (TO-252) type C mechanical data mm Dim. Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 5.33 5.46 c 0.47 0.60 c2 0.47 0.60 D 6.00 6.10 6.20 D1 5.25 E 6.50 6.60 6.70 E1 4.70 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 2.90 REF L2 0.90 1.25 L3 0.51 BSC L4 0.60 0.80 1.00 L6 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° DS6523 - Rev 5 page 12/26

STD7NM60N, STF7NM60N, STU7NM60N DPAK (TO-252) type E package information 4.3 DPAK (TO-252) type E package information Figure 21. DPAK (TO-252) type E package outline 0068772_type-E_rev.25 DS6523 - Rev 5 page 13/26

STD7NM60N, STF7NM60N, STU7NM60N DPAK (TO-252) type E package information Table 10. DPAK (TO-252) type E mechanical data mm Dim. Min. Typ. Max. A 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 6.73 E1 4.32 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 2.74 L2 0.89 1.27 L4 1.02 Figure 22. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS6523 - Rev 5 page 14/26

STD7NM60N, STF7NM60N, STU7NM60N DPAK (TO-252) packing information 4.4 DPAK (TO-252) packing information Figure 23. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B1 B0 For machine ref. only A0 P1 D1 including draft and radii concentric around B0 User direction of feed R Bending radius User direction of feed AM08852v1 DS6523 - Rev 5 page 15/26

STD7NM60N, STF7NM60N, STU7NM60N DPAK (TO-252) packing information Figure 24. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A Tape slot G measured in core for at hub Full radius tape start 2.5mm min.width AM06038v1 Table 11. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DS6523 - Rev 5 page 16/26

STD7NM60N, STF7NM60N, STU7NM60N TO-220FP package information 4.5 TO-220FP package information Figure 25. TO-220FP package outline 7012510_Rev_12_B DS6523 - Rev 5 page 17/26

STD7NM60N, STF7NM60N, STU7NM60N TO-220FP package information Table 12. TO-220FP package mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DS6523 - Rev 5 page 18/26

STD7NM60N, STF7NM60N, STU7NM60N IPAK (TO-251) type A package information 4.6 IPAK (TO-251) type A package information Figure 26. IPAK (TO-251) type A package outline 0068771_IK_typeA_rev14 DS6523 - Rev 5 page 19/26

STD7NM60N, STF7NM60N, STU7NM60N IPAK (TO-251) type A package information Table 13. IPAK (TO-251) type A package mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 B5 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 1.00 V1 10° DS6523 - Rev 5 page 20/26

STD7NM60N, STF7NM60N, STU7NM60N IPAK (TO-251) type C package information 4.7 IPAK (TO-251) type C package information Figure 27. IPAK (TO-251) type C package outline 0068771_IK_typeC_rev14 DS6523 - Rev 5 page 21/26

STD7NM60N, STF7NM60N, STU7NM60N IPAK (TO-251) type C package information Table 14. IPAK (TO-251) type C package mechanical data mm Dim. Min. Typ. Max. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 b2 0.90 b4 5.23 5.33 5.43 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.80 1.00 1.20 L2 0.90 1.08 1.25 θ1 3° 5° 7° θ2 1° 3° 5° DS6523 - Rev 5 page 22/26

STD7NM60N, STF7NM60N, STU7NM60N Ordering information 5 Ordering information Table 15. Order codes Order code Marking Package Packing STD7NM60N DPAK Tape and reel STF7NM60N 7NM60N TO-220FP Tube STU7NM60N IPAK DS6523 - Rev 5 page 23/26

STD7NM60N, STF7NM60N, STU7NM60N Revision history Table 16. Document revision history Date Version Changes 29-Oct-2009 1 First release. 19-Jul-2010 2 Corrected values in Table 3: Thermal data. 11-Oct-2010 3 Inserted new value in Table 6: Dynamic 04-Nov-2010 Changed RDS(on) typical value. The part number STP7NM60N has been moved to a separate datasheet. Removed maturity status indication from cover page. The document status is production data. 05-Sep-2018 Updated title and features in cover page. Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and Section 4 Package information. Minor text changes. DS6523 - Rev 5 page 24/26

STD7NM60N, STF7NM60N, STU7NM60N Contents Contents 1 Electrical ratings ..................................................................2 2 Electrical characteristics...........................................................3 2.1 Electrical characteristics curves ..................................................5 3 Test circuits .......................................................................7 4 Package information...............................................................8 4.1 DPAK (TO-252) type A package information........................................8 4.2 DPAK (TO-252) type C package information.......................................10 4.3 DPAK (TO-252) type E package information.......................................12 4.4 DPAK (TO-252) packing information..............................................14 4.5 TO-220FP package information .................................................16 4.6 IPAK (TO-251) type A package information........................................18 4.7 IPAK (TO-251) type C package information........................................20 5 Ordering information .............................................................23 Revision history .......................................................................24 DS6523 - Rev 5 page 25/26

STD7NM60N, STF7NM60N, STU7NM60N IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS6523 - Rev 5 page 26/26

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