Si6928DQ Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free Option Available V (V) R (Ω) I (A) DS DS(on) D Pb-free 0.035 at VGS = 10 V ± 4.0 Available 30 0.050 at VGS = 4.5 V ± 3.4 RoHS* COMPLIANT D1 D2 TSSOP-8 DS11 12 Si6928DQ 87 DS22 G1 G2 S1 3 6 S2 G1 4 5 G2 Top View S1 S2 Ordering Information:Si6928DQ-T1 Si6928DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TTAA == 2750 °°CC ID ±± 43..02 A Pulsed Drain Current IDM ± 20 Continuous Source Current (Diode Conduction)a IS 1.25 TA = 25 °C 1.0 Maximum Power Dissipationa PD W TA = 70 °C 0.64 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 125 °C/W Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70663 www.vishay.com S-81056-Rev. D, 12-May-08 1

Si6928DQ Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 20 A VGS = 10 V, ID = 4.0 A 0.027 0.035 Drain-Source On-State Resistancea RDS(on) Ω VGS = 4.5 V, ID = 3.4 A 0.038 0.050 Forward Transconductancea gfs VDS = 15 V, ID = 4.0 A 13 S Diode Forward Voltagea VSD IS = 1.25 A, VGS = 0 V 0.73 1.2 V Dynamicb Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 4.0 A 9 14 Total Gate Charge Qgt 17.5 30 nC Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 4.0 A 4.0 Gate-Drain Charge Qgd 2.5 Turn-On Delay Time td(on) 12 20 Rise Time tr VDD = 15 V, RL = 6 Ω 9 20 Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 25 50 ns Fall Time tf 20 40 Source-Drain Reverse Recovery Time trr IF = 1.25 A, dI/dt = 100 A/µs 25 60 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70663 2 S-81056-Rev. D, 12-May-08

Si6928DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 20 20 VGS = 10 thru 5 V 4 V 16 16 A) A) nt ( 12 nt ( 12 e e urr urr C C n n ai 8 ai 8 Dr Dr - - TC = 125 °C D D I 4 I 4 25 °C 3 V - 55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.06 1500 Ciss 0.05 1200 )Ω stance ( 0.04 VGS = 4.5 V ce (pF) 900 - On-ResiDS(on) 00..0023 VGS = 10 V C - Capacitan 600 Coss R 300 0.01 Crss 0 0 0 4 8 12 16 20 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 VDS = 15 V 1.6 V = 10 V V) 8 ID = 4.0 A IG =S 4.0 A oltage ( stance 1.4 D ce V 6 Resied) 1.2 our On-aliz ate-to-S 4 - S(on)(Norm 1.0 G D 0.8 - S 2 R G 0.6 V 0 0.4 0 4 8 12 16 20 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 70663 www.vishay.com S-81056-Rev. D, 12-May-08 3

Si6928DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 20 0.12 A) 10 e ()Ω 0.09 nt ( anc - Source CurreIS TJ = 150 °C TJ = 25 °C - On-ResistRDS(on) 00..0036 ID = 4.0 A 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1 3 5 7 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 40 32 0.3 I = 250 µA D V) ce ( 0.0 W) 24 Varian ower ( 16 h) - 0.3 P S(t G V 8 - 0.6 - 0.9 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 30 T - Temperature (°C) Time (s) J Threshold Voltage Single Pulse Power 2 1 Duty Cycle = 0.5 nt e Transiance 0.2 Notes: ctive mped 0.1 PDM malized EffeThermal I 0.1 0.05 1. Duty Cty1clet,2 D = tt12 or 2. Per Unit Base = RthJA = 125°C/W N 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70663. www.vishay.com Document Number: 70663 4 S-81056-Rev. D, 12-May-08

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