Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F Q U 3 N December 2013 5 0 C FQU3N50C — N-Channel QFET® MOSFET N - C 500 V, 2.5 A, 2.5 Ω h a n Description Features n e This N-Channel enhancement mode power MOSFET is produced • 2.5 A, 500 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 1.25 A l using Fairchild Semiconductor’s proprietary planar stripe and Q • Low Gate Charge (Typ. 10 nC) F DMOS technology. This advanced MOSFET technology has E been especially tailored to reduce on-state resistance, and to • Low Crss (Typ. 8.5 pF) T provide superior switching performance and high avalanche ® • 100% Avalanche Tested energy strength. These devices are suitable for switched mode M power supplies, active power factor correction (PFC), and O electronic lamp ballasts. S F E T D G G D S I-PAK S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FQU3N50CTU Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25°C) 2.5 A D C - Continuous (T = 100°C) 1.5 A C I Drain Current - Pulsed (Note 1) 10 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 200 mJ AS I Avalanche Current (Note 1) 2.5 A AR E Repetitive Avalanche Energy (Note 1) 3.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 35 W D C - Derate above 25°C 0.28 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter FQU3N50CTU Unit RθJC Thermal Resistance, Junction-to-Case, Max. 3.5 °C/W RθJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 °C/W RθJA Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50 °C/W ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQU3N50C Rev C1

F Q Package Marking and Ordering Information U 3 N Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 5 FQU3N50CTU FQU3N50C IPAK Tube N/A N/A 75 units 0 C — Electrical Characteristics TC = 25°C unless otherwise noted. N - Symbol Parameter Test Conditions Min. Typ. Max. Unit C h Off Characteristics a n BV Drain-Source Breakdown Voltage V = 0 V, I = 250 µA 500 -- -- V n DSS GS D e ∆ /B ∆VTDSS Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C l Q J F I Zero Gate Voltage Drain Current V = 500 V, V = 0 V -- -- 1 µA E DSS DS GS T V = 400 V, T = 125°C -- -- 10 µA ® DS C M I Gate-Body Leakage Current, Forward V = 30 V, V = 0 V -- -- 100 nA GSSF GS DS O I Gate-Body Leakage Current, Reverse V = -30 V, V = 0 V -- -- -100 nA S GSSR GS DS F On Characteristics E T V Gate Threshold Voltage V = V , I = 250 µA 2.0 -- 4.0 V GS(th) DS GS D R Static Drain-Source On-Resistance V = 10 V, I = 1.25 A -- 2.1 2.5 Ω DS(on) GS D g Forward Transconductance V = 40 V, I = 1.25 A -- 1.5 -- S FS DS D Dynamic Characteristics C Input Capacitance V = 25 V, V = 0 V, -- 280 365 pF iss DS GS f = 1.0 MHz C Output Capacitance -- 50 65 pF oss C Reverse Transfer Capacitance -- 8.5 11 pF rss Switching Characteristics td(on) Turn-On Delay Time VDD = 250 V, ID = 2.5A, -- 10 30 ns R = 25 Ω tr Turn-On Rise Time G -- 25 60 ns td(off) Turn-Off Delay Time -- 35 80 ns (Note 4) tf Turn-Off Fall Time -- 25 60 ns Qg Total Gate Charge VDS = 400 V, ID = 2.5A, -- 10 13 nC V = 10 V Qgs Gate-Source Charge GS -- 1.5 -- nC Qgd Gate-Drain Charge (Note 4) -- 5.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 2.5 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 10 A SM V Drain-Source Diode Forward Voltage V = 0 V, I = 2.5 A -- -- 1.4 V SD GS S t Reverse Recovery Time V = 0 V, I = 3 A, -- 170 -- ns rr GS S dI / dt = 100 A/µs Qrr Reverse Recovery Charge F -- 0.7 -- µC NOTES: 1.Repetitive rating : pulse-width limited by maximum junction temperature. 2.L = 58 mH, IAS = 2.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 2.5 A, di/dt ≤200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4 . Essentially independent of operating temperature. ©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FQU3N50C Rev C1

F Q Typical Performance Characteristics U 3 N 5 0 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics C — 101 N Top : 1 5 V.0G SV -C 101 1 08..00 VV h 7.0 V a I, Drain Current [A]D 100 Bottom : 5665....0505 VVVV I , Drain Current [A]D 100 251°5C0°C -55°C Note nnel QFET® 10-1 N12o..t e2Ts5C 0:=µ s2 5P°uClse Test 10-1 21.. 2V5DS0 µ=s 4 P0uVlse Test MO 10-1 100 101 2 4 6 8 10 S VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] FE T Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperatue 8.0 7.5 e 7.0 A] sistanc 66..05 VGS = 10V urrent [ R [],ΩDS(ON)Drain-Source On-Re 2334455.......5050505 VGS = 20V I, Reverse Drain CDR 100 150°C 25°C N1o.t eVs : = 0V 2.0 Note : TJ = 25°C 2. 25G0Sµs Pulse Test 1.5 10-1 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I, Drain Current [A] V , Source-Drain voltage [V] D SD Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 C = C + C (C = shorted) iss gs gd ds C = C + C 600 Corssss = Cgdds gd V] 10 VDS = 100V e [ V = 250V ances [pF] 400 CCosisss urce Voltag 68 VDDSS = 400V pacit Note ; e-So 4 Ca 200 Crss 1. VGS = 0 V Gat 2. f = 1 MHz , GS 2 V Note : I = 3A D 0 0 10-1 100 101 0 5 10 V , Drain-Source Voltage [V] Q, Total Gate Charge [nC] DS G ©2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FQU3N50C Rev C1

F Q Typical Performance Characteristics U (Continued) 3 N 5 0 Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation C vs. Temperature vs. Temperature — N - C 1.2 3.0 h ge a BV, (Normalized)DSSDrain-Source Breakdown Volta011...901 N 12o..t eVIDsG =S: =2 500 VµA R, (Normalized)DS(ON)Drain-Source On-Resistance 01122.....50505 N12o..t eVIDsG =S: =1 .150 A V nnel QFET MOSF® 0.8 0.0 E -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 T T, Junction Temperature [°C] T, Junction Temperature [°C] J J Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 3 102 Operation in This Area is Limited by R DS(on) I, Drain Current [A]D111000-101 N 1o.t eTsC := 25°C 1010D0 Cmms1s m1s00 µs I, Drain Current [A]D 12 2. TJ = 150°C 3. Single Pulse 10-2 0 100 101 102 103 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [°C] Figure 11. Transient Thermal Response Curve W] C/ D=0.5 o e [ 100 s 0.2 on Notes : sp 0.1 1. ZθJC(t) = 3.5 °C/W Max. e 2. Duty Factor, D=t/t R 0.05 1 2 al 3. TJM - TC = PDM * ZθJC(t) m 0.02 her 10-1 0.01 PDM T (t), C single pulse t1t2 ZθJ 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 ©2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FQU3N50C Rev C1

F Q U 3 N 5 0 C VV — GGSS SSaammee TTyyppee 1122VV 220000nnFF 5500KKΩΩ aass DDUUTT 1100VV QQgg N-C 330000nnFF h a VV n VV DDSS GGSS QQ QQ n ggss ggdd e l Q DDUUTT F E IG = const. T ® M O CChhaarrggee S F E Figure 12. Gate Charge Test Circuit & Waveform T VVDDSS RRLL VVDDSS 9900%% VVGGSS VVDDDD RR GG 1100%% VV VV DDUUTT GGSS GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 13. Resistive Switching Test Circuit & Waveforms BBVV LLL 1111 DDSSSS EEE === ---------------- LLLIII 222 ---------------------------------------- VVDDSS AAASSS 2222 AAASSS BBVV --VV DDSSSS DDDD BBVV III DDSSSS DDD II AASS RR GG VVDDDD IIDD ((tt)) VVGGSS DDUUTT VVDDDD VVDDSS ((tt)) tt pp tt TTiimmee pp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FQU3N50C Rev C1

F Q U 3 N 5 0 C DDUUTT ++ — N - VV C DDSS h a __ n n e l Q II SSDD F LLL E T ® M DDrriivveerr O RR S GG F SSaammee TTyyppee E aass DDUUTT VVDDDD T VV GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR GG ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VV DDD ===------------------------------------------------------------------------------ GGSS GGGaaattteee PPPuuulllssseee PPPeeerrriiioooddd 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD ddii//ddtt (( DDUUTT )) II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FQU3N50C Rev C1

F Q Mechanical Dimensions U 3 N 5 0 C — N - C h a n n e l Q F E T ® M O S F E T Figure 16. TO-251 (I-PAK), Molded, 3-Lead, Option AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT251-003 ©2008 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FQU3N50C Rev C1

F Q U 3 N 5 0 C — TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not N intended to be an exhaustive list of all such trademarks. - C AccuPower™ F-PFS™ Sync-Lock™ BAiXtS-CiCA™P®* FGRloFbEaTl P®ower ResourceSM Powtm®erTrench® ®* han Build it Now™ GreenBridge™ PowerXS™ TinyBoost® n CCoorreePPOLUWSE™R™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TinyBuck® el CROSSVOLT™ Gmax™ QS™ TTiinnyyCLoaglcic™® Q CTL™ GTO™ Quiet Series™ F TINYOPTO™ Current Transfer Logic™ IntelliMAX™ RapidConfigure™ E DEUXPEED® ISOPLANAR™ ™ TinyPower™ T Dual Cool™ Marking Small Speakers Sound Louder TinyPWM™ ® EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TinyWire™ M TranSiC™ EfficentMax™ MegaBuck™ SignalWise™ TriFault Detect™ O ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* S ® MicroFET™ SMART START™ SerDes™ F MicroPak™ Solutions for Your Success™ E Fairchild® MicroPak2™ SPM® T FFAaiCrcTh iQldu Sieet mSiecroiensd™uctor® MMiollteiorDnMrivaex™™ SSTupEeArLFTEHT™® UHC® FACT® mWSaver® SuperSOT™-3 Ultra FRFET™ FAST® OptoHiT™ SuperSOT™-6 UniFET™ FastvCore™ OPTOLOGIC® SuperSOT™-8 VCX™ FETBench™ OPTOPLANAR® SupreMOS® VisualMax™ FPS™ SyncFET™ VoltagePlus™ XS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I66 ©2008 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FQU3N50C Rev C1

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