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F D February 2006 S 8 8 8 FDS8884 4 N ® - N-Channel PowerTrench MOSFET C h a 30V, 8.5A, 23mΩ n n General Descriptions Features e l (cid:132) Max r = 23mΩ at V = 10V, I = 8.5A P This N-Channel MOSFET has been designed specifically DS(on) GS D o to improve the overall efficiency of DC/DC converters using (cid:132) Max r = 30mΩ at V = 4.5V, I = 7.5A w either synchronous or conventional switching PWM DS(on) GS D e controllers. It has been optimized for low gate charge, low (cid:132) Low gate charge r r and fast switching speed. T DS(on) r (cid:132) 100% RG Tested e LEA D FREEIMPLEM (cid:132) RoHS Compliant nch EN ® AT NOIT M O S F E T D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current Continuous (Note 1a) 8.5 A I D Pulsed 40 A E Single Pulse Avalanche Energy (Note 2) 32 mJ AS Power dissipation 2.5 W P D Derate above 25oC 20 mW/oC T , T Operating and Storage Temperature -55 to 150 oC J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 50 oC/W θJA R Thermal Resistance, Junction to Case (Note 1) 25 oC/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS8884 FDS8884 SO-8 330mm 12mm 2500 units ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS8884 Rev. A

F Electrical Characteristics TJ = 25°C unless otherwise noted D S Symbol Parameter Test Conditions Min Typ Max Units 8 8 Off Characteristics 8 4 BV Drain to Source Breakdown Voltage I = 250µA, V = 0V 30 V DSS D GS N ∆BV Breakdown Voltage Temperature I = 250µA, referenced to ∆ TDJSS Coefficient 2D5oC 23 mV/oC -C V = 24V 1 h IDSS Zero Gate Voltage Drain Current VDS = 0V T = 125oC 250 µA a GS J n I Gate to Source Leakage Current V = ±20V ±100 nA n GSS GS e On Characteristics (Note 3) l P V Gate to Source Threshold Voltage V = V , I = 250µA 1.2 1.7 2.5 V o GS(th) GS DS D w ∆V Gate to Source Threshold Voltage I = 250µA, referenced to ∆ GTS(th) Temperature Coefficient 2D5oC -4.9 mV/oC e J r V = 10V, I = 8.5A, 19 23 T GS D r V = 4.5V , I = 7.5A, 23 30 e rDS(on) Drain to Source On Resistance GS D mΩ n V = 10V, I = 8.5A, GS D 26 32 c TJ = 125oC h ® Dynamic Characteristics M C Input Capacitance 475 635 pF iss O V = 15V, V = 0V, Coss Output Capacitance f =D S1MHz GS 100 135 pF S C Reverse Transfer Capacitance 65 100 pF F rss E R Gate Resistance f = 1MHz 0.9 1.6 Ω G T Switching Characteristics (Note 3) t Turn-On Delay Time 5 10 ns d(on) V = 15V, I = 8.5A t Rise Time DD D 9 18 ns r V = 10V, R = 33Ω t Turn-Off Delay Time GS GS 42 68 ns d(off) t Fall Time 21 34 ns f V = 15V, V = 10V Q Total Gate Charge DS GS 9.2 13 nC g I = 8.5A D Qg Total Gate Charge VDS = 15V, VGS = 5V 5.0 7 nC Q Gate to Source Gate Charge I = 8.5A 1.5 nC gs D Q Gate to Drain Charge 2.0 nC gd Drain-Source Diode Characteristics I = 8.5A 0.9 1.25 V V Source to Drain Diode Voltage SD SD I = 2.1A 0.8 1.0 V SD trr Reverse Recovery Time IF = 8.5A, di/dt = 100A/µs 33 ns Q Reverse Recovery Charge 20 nC rr Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a) 50°C/W when b) 105°C/W when c) 125°C/W when mounted on a 1 in2 mounted on a .04 in2 m ounted on a pad of 2 oz copper pad of 2 oz copper minimun pad Scale 1 : 1 on letter size paper 2: Starting TJ = 25°C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V. 3: Pulse Test:Pulse Width <300µs, Duty Cycle <2%. 2 www.fairchildsemi.com FDS8884 Rev. A

F Typical Characteristics D T = 25°C unless otherwise noted J S 8 8 40 3.0 8 PULSE DURATION = 80µs CE PULSE DURATION = 80µs 4 AIN CURRENT (A) 2300 VVVVGGGGSSSS ==== 4541...0500VVVVDUTY CYCLEV G=S 0 =.5 3%.5MVAX RMALIZEDRCE ON-RESISTAN 122...505 VGS = 3VVGS = 3.5VVDGUST =Y 4 .C5YVCVLGES == 40V.5%MAX N-Channe I, DRD10 VGS = 3V NOTO SOU 1.0 l Po N VGS = 5V VGS = 10V w AI 0 R 0.5 e 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 D 5 10 15 20 25 30 35 40 r T VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A) r e n Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain c current and Gate Voltage h ® M SISTANCE11..46 IVDG =S 8=. 51A0V URCE m)Ω556050 ID = 8.5A PDUULTSYE C DYUCRLEA T=I O0.N5 %= M80AµXs OSFE ALIZEDE ON-RE1.2 N TO SOTANCE (4405 T NORM TO SOURC01..80 , DRAIS(ON)ON-RESIS233505 TJ = 150oC AIN rD 20 TJ = 25oC DR0.6 15 -80 -40 0 40 80 120 160 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Figure 4. On-Resistance vs Gate to Source Temperature Voltage 40 40 PULSE DURATION = 80µs A) VGS = 0V A) 35 DUTY CYCLE = 0.5%MAX T ( 10 T ( 30 EN REN 25 VDD = 5V TJ = 25oC URR 1 TA = 150oC TJ = 25oC R C U N N C 20 RAI 0.1 DRAI 15 TJ = 150oC SE D TJ = -55oC , D 10 ER 0.01 I V 5 TJ = -55oC RE 0 I, S1E-3 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS8884 Rev. A

Typical Characteristics F T = 25°C unless otherwise noted J D S 8 10 700 V) 8 E( 8 G 600 4 CE VOLTA 68 VDD = 10V VDD = 15V NCE (pF)450000 fV =G S1 M= H0Vz Ciss N-Ch UR TA a O SO 4 VDD = 20V PACI300 Coss nn T A200 e E C l T 2 A P V, GGS 0 100 Crss ow 0 2 4 6 8 10 0.1 1 10 30 e Qg, GATE C HARGE(nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) rT r e Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage n c h 20 9 ® A) 8 M ENT( 10 A) 7 VGS = 10V O E CURR STARTING TJ = 25oC RRENT ( 56 VGS = 4.5V SFE H U T C C 4 N N LA AI 3 A R I, AVAS STARTING TJ = 125oC I, DD 12 RθJA = 50oC/W 1 0 0.01 0.1 1 10 20 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE(ms) TA, AMBIENT TEM PERATURE(oC) Figure 9. Unclamped Inductive Switching Figure 10. Maximum Continuous Drain Current vs Capability Ambient Temperature 100 2000 W)1000 TA = 25oC T (A) 10 10us WER ( FACOUBRRO RVTEEEN M2T5P oAECRS D AFETOURLRALTEOESW PSE:AK N O N CURRE 1 110m0sus NSIENT P 100 VGS=10V I = I25 1----5---0-1---2-–--5---T---A---- AI OPERATION IN THIS 10ms A I, DRD 0.1 SALIIRMNEGITALE EMD AP BYUY LB rSEDES (on) 1010sms EAK TR 10 TJ = MAX RATED P 0.01 TA = 25oC DC P, (PK) 1 SINGLE PULSE 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 101 102 VDS, DRAIN TO SOUR CE VOLTAGE (V) t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDS8884 Rev. A

Typical Characteristics F T = 25°C unless otherwise noted J D S 8 2 8 1 DUTY CYCLE-DESCENDING ORDER 8 4 L D = 0.5 N A 0.2 ERMZJAθ0.1 00..105 -C ED THANCE, 00..0021 PDM han ALIZPED0.01 t1 ne RMIM SINGLE PULSE t2 l O NOTES: P N DUTY FACTOR: D = t1/t2 o PEAK TJ = PDM x ZθJA x RθJA + TA w 1E-3 10-5 10-4 10-3 10-2 10-1 100 101 102 103 e r t, RECTANGULAR PULSE DURATION(s) T Figure 13. Transient Thermal Response Curve r e n c h ® M O S F E T 5 www.fairchildsemi.com FDS8884 Rev. A

TRADEMARKS F D S The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not 8 intended to be an exhaustive list of all such trademarks. 8 ACEx™ FAST® ISOPLANAR™ PowerSaver™ SuperSOT™-6 8 ActiveArray™ FASTr™ LittleFET™ PowerTrench® SuperSOT™-8 4 Bottomless™ FPS™ MICROCOUPLER™ QFET® SyncFET™ N - Build it Now™ FRFET™ MicroFET™ QS™ TCM™ C CoolFET™ GlobalOptoisolator™ MicroPak™ QT Optoelectronics™ TinyLogic® h a CROSSVOLT™ GTO™ MICROWIRE™ Quiet Series™ TINYOPTO™ n DOME™ HiSeC™ MSX™ RapidConfigure™ TruTranslation™ n EcoSPARK™ I2C™ MSXPro™ RapidConnect™ UHC™ e E2CMOS™ i-Lo™ OCX™ µSerDes™ UltraFET® l P EnSigna™ ImpliedDisconnect™ OCXPro™ ScalarPump™ UniFET™ o FACT™ IntelliMAX™ OPTOLOGIC® SILENT SWITCHER® VCX™ w FACT Quiet Series™ OPTOPLANAR™ SMART START™ Wire™ e r PACMAN™ SPM™ T Across the board. Around the world.™ POP™ Stealth™ r e The Power Franchise® Power247™ SuperFET™ n Programmable Active Droop™ PowerEdge™ SuperSOT™-3 c h ® DISCLAIMER M FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY O PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY S LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; F NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. E T LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, or device or system whose failure to perform can be (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In This datasheet contains the design specifications for Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 FDS8884 Rev. A 6 www.fairchildsemi.com

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