Product Order Technical Tools & Support & Folder Now Documents Software Community CSD17556Q5B SLPS392D–MARCH2013–REVISEDNOVEMBER2017 CSD17556Q5B 30-V N-Channel NexFET™ Power MOSFET 1 Features ProductSummary • ExtremelyLowResistance 1• Ultra-LowQ andQ TA=25°C TYPICALVALUE UNIT g gd VDS Drain-to-SourceVoltage 30 V • Low-ThermalResistance Qg GateChargeTotal(4.5V) 30 nC • AvalancheRated Qgd GateChargeGate-to-Drain 7.5 nC • Lead-FreeTerminalPlating VGS=4.5V 1.5 RDS(on) Drain-to-SourceOn-Resistance mΩ • RoHSCompliant VGS=10V 1.2 • HalogenFree VGS(th) ThresholdVoltage 1.4 V • SON5-mm×6-mmPlasticPackage DeviceInformation(1) 2 Applications DEVICE QTY MEDIA PACKAGE SHIP CSD17556Q5B 2500 SON Tape • PointofLoadSynchronousBuckinNetworking, 13-InchReel 5.00-mm×6.00-mm and CSD17556Q5BT 250 PlasticPackage Reel Telecom,andComputingSystems (1) For all available packages, see the orderable addendum at • SynchronousRectification theendofthedatasheet. • ActiveORingandHotswapApplications AbsoluteMaximumRatings 3 Description TA=25°C VALUE UNIT This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFET™ power VDS Drain-to-SourceVoltage 30 V MOSFET is designed to minimize losses in VGS Gate-to-SourceVoltage ±20 V synchronous rectification and other power conversion ContinuousDrainCurrent(PackageLimited) 100 applications. ContinuousDrainCurrent(SiliconLimited), ID TC=25°C 215 A TopView ContinuousDrainCurrent(1) 34 IDM PulsedDrainCurrent,TA=25°C(1)(2) 400 A S 1 8 D PowerDissipation(1) 3.1 PD W PowerDissipation,TC=25°C 191 S 2 7 D TJ, OperatingJunction, –55to150 °C Tstg StorageTemperature S 3 6 D AvalancheEnergy,SinglePulse D EAS ID=100A,L=0.1mH,RG=25Ω 500 mJ G 4 5 D (1) Typical R = 40°C/W on 1-in2 (6.45-cm2), 2-oz θJA (0.071-mm)thickCupadona0.06-inch(1.52-mm)thickFR4 P0093-01 PCB. (2) Max R = 1.3°C/W, pulse duration ≤ 100 μs, duty cycle ≤ θJC 1%. R vsV GateCharge DS(on) GS 6 10 ) TC = 25°C Id = 30A ID = 30A We (m 5 TC = 125ºC Id = 30A ge (V) 8 VDS =15V stanc 4 Volta si e 6 e c e R 3 our n-Stat 2 e-to-S 4 O at - ()Son 1 - GGS 2 D V R 0 0 0 2 4 6 8 10 12 0 10 20 30 40 50 60 70 VGS - Gate-to- Source Voltage (V) G001 Qg - Gate Charge (nC) G001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

CSD17556Q5B SLPS392D–MARCH2013–REVISEDNOVEMBER2017 www.ti.com Table of Contents 1 Features.................................................................. 1 6.2 CommunityResources..............................................7 2 Applications........................................................... 1 6.3 Trademarks...............................................................7 3 Description............................................................. 1 6.4 ElectrostaticDischargeCaution................................7 6.5 Glossary....................................................................7 4 RevisionHistory..................................................... 2 7 Mechanical,Packaging,andOrderable 5 Specifications......................................................... 3 Information............................................................. 8 5.1 ElectricalCharacteristics...........................................3 7.1 Q5BPackageDimensions........................................8 5.2 ThermalInformation..................................................3 7.2 RecommendedPCBPattern.....................................9 5.3 TypicalMOSFETCharacteristics..............................4 7.3 RecommendedStencilPattern.................................9 6 DeviceandDocumentationSupport.................... 7 7.4 Q5BTapeandReelInformation.............................10 6.1 ReceivingNotificationofDocumentationUpdates....7 4 Revision History ChangesfromRevisionC(January2017)toRevisionD Page • Correctedfrontpageformattingerror..................................................................................................................................... 1 ChangesfromRevisionB(August2014)toRevisionC Page • ChangedpartnumbersintheDeviceInformationtable......................................................................................................... 1 • AddedReceivingNotificationofDocumentationUpdatessectionandCommunityResourcessectiontotheDevice andDocumentationSupportsection...................................................................................................................................... 7 ChangesfromRevisionA(October2013)toRevisionB Page • Increasedmaxpulseddraincurrentto400A........................................................................................................................ 1 • Updatedpulseddraincurrentconditions ............................................................................................................................... 1 • UpdatedFigure1toanormalizedR curve ....................................................................................................................... 4 θJC • UpdatedtheSOAinFigure10 .............................................................................................................................................. 6 • Updatedthemechanicaldrawinganddimensionstabletoshowpreviouslyunknowndimensions...................................... 8 ChangesfromOriginal(March2013)toRevisionA Page • UpdatedthedimensionstableintheMechanicalDataSectiontoincludeDIM"H"values................................................... 8 2 SubmitDocumentationFeedback Copyright©2013–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD17556Q5B

CSD17556Q5B www.ti.com SLPS392D–MARCH2013–REVISEDNOVEMBER2017 5 Specifications 5.1 Electrical Characteristics T =25°C(unlessotherwisestated) A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT STATICCHARACTERISTICS BV Drain-to-sourcevoltage V =0V,I =250μA 30 V DSS GS DS I Drain-to-sourceleakagecurrent V =0V,V =24V 1 μA DSS GS DS I Gate-to-sourceleakagecurrent V =0V,V =20V 100 nA GSS DS GS V Gate-to-sourcethresholdvoltage V =V ,I =250μA 1.15 1.4 1.65 V GS(th) DS GS DS V =4.5V,I =40A 1.5 1.8 GS DS R Drain-to-sourceon-resistance mΩ DS(on) V =10V,I =40A 1.2 1.4 GS DS g Transconductance V =15V,I =40A 197 S fs DS DS DYNAMICCHARACTERISTICS C Inputcapacitance 5400 7020 pF iss V =0V,V =15V, C Outputcapacitance GS DS 1770 2310 pF oss ƒ=1MHz C Reversetransfercapacitance 68 88 pF rss R Seriesgateresistance 0.7 1.4 Ω G Q Gatechargetotal(4.5V) 30 39 nC g Q Gatechargegate-to-drain 7.5 nC gd V =15V,I =40A DS DS Q Gatechargegate-to-source 11 nC gs Q GatechargeatV 6.1 nC g(th) th Q Outputcharge V =15V,V =0V 48 nC oss DS GS t Turnondelaytime 14 ns d(on) tr Risetime VDS=15V,VGS=4.5V, 26 ns td(off) Turnoffdelaytime IDS=40A,RG=2Ω 27 ns t Falltime 12 ns f DIODECHARACTERISTICS V Diodeforwardvoltage I =40A,V =0V 0.8 1 V SD SD GS Q Reverserecoverycharge 68 nC rr V =15V,I =40A,di/dt=300A/μs DD F t Reverserecoverytime 36 ns rr 5.2 Thermal Information T =25°C(unlessotherwisestated) A THERMALMETRIC MIN TYP MAX UNIT R Junction-to-casethermalresistance(1) 1.3 θJC °C/W R Junction-to-ambientthermalresistance(1)(2) 50 θJA (1) R isdeterminedwiththedevicemountedona1-in2(6.45-cm2),2-oz(0.071-mm)thickCupadona1.5-in×1.5-in θJC (3.81-cm×3.81-cm),0.06-in(1.52-mm)thickFR4PCB.R isspecifiedbydesign,whereasR isdeterminedbytheuser’sboard θJC θJA design. (2) DevicemountedonFR4materialwith1-in2(6.45-cm2),2-oz(0.071-mm)thickCu. Copyright©2013–2017,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:CSD17556Q5B

CSD17556Q5B SLPS392D–MARCH2013–REVISEDNOVEMBER2017 www.ti.com GATE Source GATE Source N N - - C C h h a a n n MaxR =50°C/W MaxR =125°C/W 5x θJA 5x θJA 6 whenmountedon1-in2 6 whenmountedona Q Q FN (6.45-cm2)of FN minimumpadareaof TT 2-oz(0.071-mm)thick TT 2-oz(0.071-mm)thick A A M Cu. M Cu. A I X N R R e e v v 3 DRAIN 3 DRAIN M0137-01 M0137-02 5.3 Typical MOSFET Characteristics T =25°C(unlessotherwisestated) A Figure1.TransientThermalImpedance 4 SubmitDocumentationFeedback Copyright©2013–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD17556Q5B

CSD17556Q5B www.ti.com SLPS392D–MARCH2013–REVISEDNOVEMBER2017 Typical MOSFET Characteristics (continued) T =25°C(unlessotherwisestated) A 200 200 A) 180 A) 180 VDS = 5V nt ( 160 nt ( 160 e e urr 140 urr 140 C C e 120 e 120 c c our 100 our 100 S S o- 80 o- 80 n-t n-t ai 60 ai 60 Dr Dr I - DS 2400 VVVGGGSSS ===1640V.5VV I - DS 2400 TTTCCC === 12−2555°5C°°CC 0 0 0 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) G001 VGS - Gate-to-Source Voltage (V) G001 Figure2.SaturationCharacteristics Figure3.TransferCharacteristics 10 100000 ID = 30A Ciss = Cgd + Cgs e-to-Source Voltage (V) 468 VDS =15V Capacitance (pF) 110000000 CCorssss == CCdgsd + Cgd at − G C 100 - S 2 G V 0 10 0 10 20 30 40 50 60 70 0 10 20 30 Qg - Gate Charge (nC) G001 VDS - Drain-to-Source Voltage (V) G001 Figure4.GateCharge Figure5.Capacitance 2 6 ID = 250uA ) TC = 25°C Id = 30A V) 1.8 Wm 5 TC = 125ºC Id = 30A e ( e ( d Voltag 11..46 esistanc 4 hol e R 3 es 1.2 at hr St V - T()GSth 0.81 - On-()Son 12 D R 0.6 0 −75 −25 25 75 125 175 0 2 4 6 8 10 12 TC - Case Temperature (ºC) G001 VGS - Gate-to- Source Voltage (V) G001 Figure6.ThresholdVoltagevsTemperature Figure7.On-StateResistancevsGate-to-SourceVoltage Copyright©2013–2017,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:CSD17556Q5B

CSD17556Q5B SLPS392D–MARCH2013–REVISEDNOVEMBER2017 www.ti.com Typical MOSFET Characteristics (continued) T =25°C(unlessotherwisestated) A 2.2 100 VGS = 4.5V ID =30A TC = 25°C stance 1.82 VGS = 10V ent (A) 10 TC = 125°C Resi 1.6 Curr 1 e n Stat 1.4 Drai 0.1 n- 1.2 o- ormalized O 0.81 − Source-tD 0.00.0011 N 0.6 S I 0.4 0.0001 −75 −25 25 75 125 175 0 0.2 0.4 0.6 0.8 1 TC - Case Temperature (ºC) G001 VSD − Source-to-Drain Voltage (V) G001 Figure8.NormalizedOn-StateResistancevsTemperature Figure9.TypicalDiodeForwardVoltage 5000 300 10us 1ms DC TC = 25ºC nt (A)1000 100us 10ms nt (A) TC = 125ºC e e urr urr 100 C 100 C e e c h ur nc o a ain-to-S 10 ak Aval - DrDS 1 Single Pulse - PeAV I Max RthetaJC = 1.3ºC/W I 0.1 10 0.1 1 10 100 0.01 0.1 1 VDS - Drain-to-Source Voltage (V) G001 TAV - Time in Avalanche (mS) G001 Figure10.MaximumSafeOperatingArea(SOA) Figure11.SinglePulseUnclampedInductiveSwitching 300.0 Silicon limited A) Package limited nt ( 250.0 e Curr 200.0 e c ur o 150.0 S o- n- t 100.0 ai Dr - S 50.0 D I 0.0 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 Figure12.MaximumDrainCurrentvsTemperature 6 SubmitDocumentationFeedback Copyright©2013–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD17556Q5B

CSD17556Q5B www.ti.com SLPS392D–MARCH2013–REVISEDNOVEMBER2017 6 Device and Documentation Support 6.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed.Forchangedetails,reviewtherevisionhistoryincludedinanyreviseddocument. 6.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TIE2E™OnlineCommunity TI'sEngineer-to-Engineer(E2E)Community.Createdtofostercollaboration amongengineers.Ate2e.ti.com,youcanaskquestions,shareknowledge,exploreideasandhelp solveproblemswithfellowengineers. DesignSupport TI'sDesignSupport QuicklyfindhelpfulE2Eforumsalongwithdesignsupporttoolsand contactinformationfortechnicalsupport. 6.3 Trademarks NexFET,E2EaretrademarksofTexasInstruments. Allothertrademarksarethepropertyoftheirrespectiveowners. 6.4 Electrostatic Discharge Caution Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. 6.5 Glossary SLYZ022—TIGlossary. Thisglossarylistsandexplainsterms,acronyms,anddefinitions. Copyright©2013–2017,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:CSD17556Q5B

CSD17556Q5B SLPS392D–MARCH2013–REVISEDNOVEMBER2017 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of thisdocument.Forbrowser-basedversionsofthisdatasheet,refertotheleft-handnavigation. 7.1 Q5B Package Dimensions K E1 c1 H L 8 1 8x) 1 8 (cid:127) b ( 7 2 2 7 1 D2 D3 E D 6 3 3 6 e 5 4 5 4 d1 d2 Top View Side View Bottom View (cid:127) Front View MILLIMETERS DIM MIN NOM MAX A 0.80 1.00 1.05 b 0.36 0.41 0.46 c 0.15 0.20 0.25 c1 0.15 0.20 0.25 c2 0.20 0.25 0.30 D1 4.90 5.00 5.10 D2 4.12 4.22 4.32 D3 3.90 4.00 4.10 d 0.20 0.25 0.30 d1 0.085TYP d2 0.319 0.369 0.419 E 4.90 5.00 5.10 E1 5.90 6.00 6.10 E2 3.48 3.58 3.68 e 1.27TYP H 0.36 0.46 0.56 L 0.46 0.56 0.66 L1 0.57 0.67 0.77 θ 0° — — K 1.40TYP 8 SubmitDocumentationFeedback Copyright©2013–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD17556Q5B

CSD17556Q5B www.ti.com SLPS392D–MARCH2013–REVISEDNOVEMBER2017 7.2 Recommended PCB Pattern For recommended circuit layout for PCB designs, see Reducing Ringing Through PCB Layout Techniques (SLPA005). 7.3 Recommended Stencil Pattern (0.020) (0.014) 0.508 (0.022) (0.011) 0.350 (0.029) x4 0.562 x 4 0.286 0.746 x 8 2.186(0.086) 4.318(0.170) 0.300 (0.012) 1.270 (0.050) 1.270(0.050) (0.051) (0.030) 1.294 (0.060) 0.766 (0.042) x 8 1.525 1.072 (0.259) 6.586 Copyright©2013–2017,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:CSD17556Q5B

CSD17556Q5B SLPS392D–MARCH2013–REVISEDNOVEMBER2017 www.ti.com 7.4 Q5B Tape and Reel Information 0 1 K0 0. ± 0.30 ±0.05 4.00 ±0.10 (See Note 1) 5 7 2.00 ±0.05 Ø 1.50 +0.10 1. –0.00 0 3 0. ± 0 B0 2.0 1 5 0 0. ± 0 5 5. A0 8.00 ±0.10 R 0.30 MAX Ø 1.50 MIN R 0.30TYP A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 M0138-01 Notes: 1. 10-sprockethole-pitchcumulativetolerance±0.2. 2. Cambernottoexceed1mmin100mm,noncumulativeover250mm. 3. Material:blackstatic-dissipativepolystyrene. 4. Alldimensionsareinmm(unlessotherwisespecified). 5. A0andB0measuredonaplane0.3mmabovethebottomofthepocket. 10 SubmitDocumentationFeedback Copyright©2013–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD17556Q5B

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) CSD17556Q5B ACTIVE VSON-CLIP DNK 8 2500 Pb-Free (RoHS SN Level-1-260C-UNLIM -55 to 150 CSD17556 Exempt) CSD17556Q5BT ACTIVE VSON-CLIP DNK 8 250 Pb-Free (RoHS SN Level-1-260C-UNLIM -55 to 150 CSD17556 Exempt) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 Addendum-Page 2

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