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PMBT3946YPN 40 V, 200 mA NPN/PNP general-purpose double transistor Rev. 01 — 12 May 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose double transistor in a SOT363(SC-88) very small Surface-Mounted Device(SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Package complement complement configuration NXP JEITA PMBT3946YPN SOT363 SC-88 PMBT3904YS PMBT3906YS very small 1.2 Features n General-purpose double transistor n Board-space reduction 1.3 Applications n General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity V collector-emitter voltage open base - - 40 V CEO I collector current - - 200 mA C h DCcurrent gain V =1V; 100 180 300 FE CE I =10mA C

PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 emitterTR1 6 5 4 6 5 4 2 baseTR1 3 collectorTR2 TR2 4 emitterTR2 TR1 5 base TR2 1 2 3 1 2 3 6 collectorTR1 sym019 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PMBT3946YPN SC-88 plastic surface-mounted package; 6leads SOT363 4. Marking Table 5. Marking codes Type number Marking code[1] PMBT3946YPN BB* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 12 May 2009 2 of 15

PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1(NPN) V collector-base voltage open emitter - 60 V CBO TR2(PNP) V collector-base voltage open emitter - - 40 V CBO Per transistor; for the PNP transistor with negative polarity V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 200 mA C I peak collector current single pulse; - 200 mA CM t £ 1ms p I peak base current single pulse; - 100 mA BM t £ 1ms p P total power dissipation T £ 25(cid:176) C [1] - 230 mW tot amb Per device P total power dissipation T £ 25(cid:176) C [1] - 350 mW tot amb T junction temperature - 150 (cid:176) C j T ambient temperature - 55 +150 (cid:176) C amb T storage temperature - 65 +150 (cid:176) C stg [1] Device mounted on an FR4Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 006aab113 400 Ptot (mW) 300 200 100 0 - 75 - 25 25 75 125 175 Tamb ((cid:176)C) FR4PCB, standard footprint Fig 1. Per device: Power derating curve PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 12 May 2009 3 of 15

PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor R thermal resistance from in free air [1] - - 543 K/W th(j-a) junction to ambient R thermal resistance from - - 290 K/W th(j-sp) junction to solder point Per device R thermal resistance from in free air [1] - - 357 K/W th(j-a) junction to ambient [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. 103 006aab114 d = 1 Zth(j-a) 0.75 (K/W) 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.01 0 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typicalvalues PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 12 May 2009 4 of 15

PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 7. Characteristics Table 8. Characteristics T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit TR1 (NPN) I collector-base cut-off V =30V; I =0A - - 50 nA CBO CB E current I emitter-base cut-off V =6V; I =0A - - 50 nA EBO EB C current h DCcurrent gain V =1V - FE CE I =0.1mA 60 180 - C I =1mA 80 180 - C I =10mA 100 180 300 C I =50mA 60 105 - C I =100mA 30 50 - C V collector-emitter I =10mA; I =1mA - 75 200 mV CEsat C B saturation voltage I =50mA; I =5mA - 120 300 mV C B V base-emittersaturation I =10mA; I =1mA 650 750 850 mV BEsat C B voltage I =50mA; I =5mA - 850 950 mV C B f transition frequency V =20V; I =10mA; 300 - - MHz T CE C f=100MHz C collector capacitance V =5V; I =i =0A; - - 4 pF c CB E e f=1MHz C emitter capacitance V =0.5V; I =i =0A; - - 8 pF e BE C c f=1MHz NF noise figure V =5V; I =100m A; - - 5 dB CE C R =1kW ; S f=10Hzto15.7kHz t delay time V =3V; I =10mA; - - 35 ns d CC C I =1mA; I =- 1mA t rise time Bon Boff - - 35 ns r t turn-on time - - 70 ns on t storage time - - 200 ns s t fall time - - 50 ns f t turn-off time - - 250 ns off PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 12 May 2009 5 of 15

PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor Table 8. Characteristics …continued T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit TR2 (PNP) I collector-base cut-off V =- 30V; I =0A - - - 50 nA CBO CB E current I emitter-base cut-off V =- 6V; I =0A - - - 50 nA EBO EB C current h DCcurrent gain V =- 1V FE CE I =- 0.1mA 60 180 - C I =- 1mA 80 180 - C I =- 10mA 100 180 300 C I =- 50mA 60 130 - C I =- 100mA 30 50 - C V collector-emitter I =- 10mA; I =- 1mA - - 100 - 250 mV CEsat C B saturation voltage I =- 50mA; I =- 5mA - - 165 - 400 mV C B V base-emittersaturation I =- 10mA; I =- 1mA - - 750 - 850 mV BEsat C B voltage I =- 50mA; I =- 5mA - - 850 - 950 mV C B f transition frequency V =- 20V; I =- 10mA; 250 - - MHz T CE C f=100MHz C collector capacitance V =- 5V; I =i =0A; - - 4.5 pF c CB E e f=1MHz C emitter capacitance V =- 0.5V; I =i =0A; - - 10 pF e CB C c f=1MHz NF noise figure V =- 5V; I =- 100m A; - - 4 dB CE C R =1kW ; S f=10Hzto15.7kHz t delay time V =- 3V; I =- 10mA; - - 35 ns d CC C I =- 1mA; I =1mA t rise time Bon Boff - - 35 ns r t turn-on time - - 70 ns on t storage time - - 225 ns s t fall time - - 75 ns f t turn-off time - - 300 ns off PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 12 May 2009 6 of 15

PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 006aab115 006aab116 600 0.20 IC IB (mA) = 5.0 4.5 hFE (A) 4.0 3.5 0.15 3.0 2.5 400 2.0 1.5 (1) 0.10 1.0 0.5 200 (2) 0.05 (3) 0 0.0 10- 1 1 10 102 103 0 2 4 6 8 10 IC (mA) VCE (V) V =1V T =25(cid:176) C CE amb (1) T =150(cid:176) C amb (2) T =25(cid:176) C amb (3) T =- 55(cid:176) C amb Fig 3. TR1 (NPN): DCcurrent gain as a function of Fig 4. TR1 (NPN): Collector current as a function of collector current; typical values collector-emitter voltage; typical values 006aab117 006aab118 1.2 1.3 VBE VBEsat (V) (V) (1) 0.8 0.9 (1) (2) (2) (3) (3) 0.4 0.5 0 0.1 10- 1 1 10 102 103 10- 1 1 10 102 103 IC (mA) IC (mA) V =1V I /I =10 CE C B (1) T =- 55(cid:176) C (1) T =- 55(cid:176) C amb amb (2) T =25(cid:176) C (2) T =25(cid:176) C amb amb (3) T =150(cid:176) C (3) T =150(cid:176) C amb amb Fig 5. TR1 (NPN): Base-emitter voltage as a function Fig 6. TR1 (NPN): Base-emitter saturation voltage as of collector current; typical values a function of collector current; typical values PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 12 May 2009 7 of 15

PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 006aab119 1 VCEsat (V) (1) 10- 1 (2) (3) 10- 2 10- 1 1 10 102 103 IC (mA) I /I =10 C B (1) T =150(cid:176) C amb (2) T =25(cid:176) C amb (3) T =- 55(cid:176) C amb Fig 7. TR1(NPN):Collector-emittersaturationvoltageasafunctionofcollectorcurrent; typical values PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 12 May 2009 8 of 15

PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 400 006aab120 - 0.3 006aab121 IB (mA) = - 5.0 hFE (1) IC -- 44..50 (A) - 3.5 300 - 3.0 - 2.5 - 0.2 - 2.0 - 1.5 200 (2) - 1.0 - 0.1 - 0.5 (3) 100 0 0 - 10- 1 - 1 - 10 - 102 - 103 0 - 2 - 4 - 6 - 8 - 10 IC (mA) VCE (V) V =- 1V T =25(cid:176) C CE amb (1) T =150(cid:176) C amb (2) T =25(cid:176) C amb (3) T =- 55(cid:176) C amb Fig 8. TR2 (PNP): DCcurrent gain as a function of Fig 9. TR2 (PNP): Collectorcurrent as a function of collector current; typical values collector-emitter voltage; typical values - 1.2 006aab123 - 1.2 006aab124 VBE VBEsat (V) (V) - 1.0 - 1.0 (1) (1) - 0.8 - 0.8 (2) (2) - 0.6 - 0.6 (3) (3) - 0.4 - 0.4 - 0.2 - 0.2 - 10- 1 - 1 - 10 - 102 - 103 - 10- 1 - 1 - 10 - 102 - 103 IC (mA) IC (mA) V =- 1V I /I =10 CE C B (1) T =- 55(cid:176) C (1) T =- 55(cid:176) C amb amb (2) T =25(cid:176) C (2) T =25(cid:176) C amb amb (3) T =150(cid:176) C (3) T =150(cid:176) C amb amb Fig 10. TR2 (PNP): Base-emitter voltage as a function Fig 11. TR2 (PNP): Base-emitter saturation voltage as of collector current; typical values a function of collector current; typical values PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 12 May 2009 9 of 15

PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor - 1 006aab122 VCEsat (V) (1) - 10- 1 (2) (3) - 10- 2 - 10- 1 - 1 - 10 - 102 - 103 IC (mA) I /I =10 C B (1) T =150(cid:176) C amb (2) T =25(cid:176) C amb (3) T =- 55(cid:176) C amb Fig 12. TR2(PNP):Collector-emittersaturationvoltageasafunctionofcollectorcurrent; typical values 8. Test information VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450 W 450 W R2 VI DUT R1 mlb826 Fig 13. TR1 (NPN): Test circuit for switching times PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 12 May 2009 10 of 15

PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450 W 450 W R2 VI DUT R1 mgd624 Fig 14. TR2 (PNP): Test circuit for switching times 9. Package outline 2.2 1.1 1.8 0.8 6 5 4 0.45 0.15 2.2 1.35 2.0 1.15 pin 1 index 1 2 3 0.3 0.25 0.65 0.2 0.10 1.3 Dimensions in mm 06-03-16 Fig 15. Package outline SOT363(SC-88) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PMBT3946YPN SOT363 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, seeSection14. [2] T1: normal taping [3] T2: reverse taping PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 12 May 2009 11 of 15

PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 11. Soldering 2.65 solder lands 2.35 1.5 0.6 0.5 0.4 (2· ) (4· ) (4· ) solder resist solder paste 0.5 0.6 occupied area (4· ) (2· ) 0.6 Dimensions in mm (4· ) 1.8 sot363_fr Fig 16. Reflow soldering footprint SOT363(SC-88) 1.5 solder lands 4.5 0.3 2.5 solder resist occupied area 1.5 Dimensions in mm preferred transport 1.3 1.3 direction during soldering 2.45 5.3 sot363_fw Fig 17. Wave soldering footprint SOT363(SC-88) PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 12 May 2009 12 of 15

PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PMBT3946YPN_1 20090512 Product data sheet - - PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 12 May 2009 13 of 15

PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 13.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications —Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the informationincludedhereinandshallhavenoliabilityfortheconsequencesof specified use without further testing or modification. use of such information. 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In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale —NXP Semiconductors products are sold full data sheet shall prevail. subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, 13.3 Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. 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Right to make changes —NXPSemiconductorsreservestherighttomake Quick reference data —The Quick reference data is an extract of the changes to information published in this document, including without product data given in the Limiting values and Characteristics sections of this limitation specifications and product descriptions, at any time and without document, and as such is not complete, exhaustive or legally binding. notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Export control —This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior Suitability for use —NXP Semiconductors products are not designed, authorization from national authorities. authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected 13.4 Trademarks to result in personal injury, death or severe property or environmental Notice:Allreferencedbrands,productnames,servicenamesandtrademarks are the property of their respective owners. 14. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com PMBT3946YPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 12 May 2009 14 of 15

PMBT3946YPN NXP Semiconductors 40 V, 200 mA NPN/PNP general-purpose double transistor 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Packing information. . . . . . . . . . . . . . . . . . . . . 11 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 May 2009 Document identifier: PMBT3946YPN_1