Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

F C P 1 1 November 2013 N 6 0 FCP11N60N / FCPF11N60NT N / ® F N-Channel SupreMOS MOSFET C P 600 V, 10.8 A, 299 mΩ F 1 1 Features Description N 6 • RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next 0N • Ultra Low Gate Charge (Typ. Q = 27.4 nC) generation of high voltage super-junction (SJ) technology T g employing a deep trench filling process that differentiates it from — • Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF) the conventional SJ MOSFETs. This advanced technology and • 100% Avalanche Tested precise process control provides lowest Rsp on-resistance, N - • RoHS Compliant superior switching performance and ruggedness. SupreMOS C MOSFET is suitable for high frequency switching power con- h Application verter applications such as PFC, server/telecom power, FPD TV an power, ATX power, and industrial power applications. n • LCD/LED/PDP TV e l • Lighting S u • Solar Inverter p • AC-DC Power Supply re M D O S ® M O S G G F DS TO-220 GDS TO-220F ET S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FCP11N60N FCPF11N60NT Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage ±30 V GSS - Continuous (T = 25oC) 10.8 10.8* I Drain Current C A D - Continuous (T = 100oC) 6.8 6.8* C I Drain Current - Pulsed (Note 1) 32.4 32.4* A DM E Single Pulsed Avalanche Energy (Note 2) 201.7 mJ AS I Avalanche Current (Note 1) 3.7 A AR E Repetitive Avalanche Energy (Note 1) 0.94 mJ AR MOSFET dv/dt 100 V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns (T = 25oC) 94.0 32.1 W P Power Dissipation C D - Derate Above 25oC 0.75 0.26 W/oC T , T Operating and Storage Temperature Range -55 to +150 oC J STG Maximum Lead Temperature for Soldering, T 300 oC L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP11N60N FCPF11N60NT Unit RθJC Thermal Resistance, Junction to Case, Max. 1.33 3.9 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 ©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCP11N60N / FCPF11N60NT Rev. C1

F C Package Marking and Ordering Information P 1 1 Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity N FCP11N60N FCP11N60N TO-220 Tube N/A N/A 50 units 6 0 FCPF11N60NT FCPF11N60NT TO-220F Tube N/A N/A 50 units N / Electrical Characteristics T = 25oC unless otherwise noted. F C C P Symbol Parameter Test Conditions Min. Typ. Max. Unit F 1 Off Characteristics 1 N BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V, TC = 25oC 600 - - V 6 ΔBV Breakdown Voltage Temperature 0 DSS I = 1 mA, Referenced to 25oC - 0.73 - V/oC N / ΔTJ Coefficient D T I Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V - - 10 μA — DSS VDS = 480 V, VGS = 0 V, TC = 125oC - - 100 N IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA -C h On Characteristics a n VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.0 - 4.0 V n R Static Drain to Source On Resistance V = 10 V, I = 5.4 A - 0.255 0.299 Ω e DS(on) GS D l g Forward Transconductance V = 40 V, I = 5.4 A - 13.5 - S S FS DS D u p Dynamic Characteristics r e C Input Capacitance - 1130 1505 pF M iss C Output Capacitance VDS = 100 V, VGS = 0 V, - 45 60 pF O oss f = 1 MHz S Crss Reverse Transfer Capacitance - 3 5 pF ® C Output Capacitance V = 380 V, V = 0 V, f = 1 MHz - 25 - pF M oss DS GS C Effective Output Capacitance V = 0 V to 480 V, V = 0 V - 130 - pF O oss(eff.) DS GS S Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 5.4 A, - 27.4 35.6 nC F Qgs Gate to Source Gate Charge VGS = 10 V - 4.9 - nC ET Q Gate to Drain “Miller” Charge (Note 4) - 8.8 - nC gd ESR Equivalent Series Resistance (G-S) f = 1 MHz - 2.0 - Ω Switching Characteristics t Turn-On Delay Time - 13.6 37.2 ns d(on) tr Turn-On Rise Time VDD = 380 V, ID = 5.4 A, - 9.1 28.2 ns V = 10 V, R = 4.7 Ω t Turn-Off Delay Time GS G - 42.0 94.0 ns d(off) tf Turn-Off Fall Time (Note 4) - 10.0 30.0 ns Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 10.8 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 32.4 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 5.4 A - - 1.2 V SD GS SD trr Reverse Recovery Time VGS = 0 V, ISD = 5.4 A, - 268 - ns Qrr Reverse Recovery Charge dIF/dt = 100 A/μs - 3.1 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 3.7 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 10.8 A, di/dt ≤ 200 A/μs, VDD = 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2009 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FCP11N60N / FCPF11N60NT Rev. C1

F C Typical Performance Characteristics P 1 1 N 6 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0 N 100 60 VGS = 15.0 V / F 10.0 V C 8.0 V P 7.0 V F nt[A] 10 665...505 VVV nt[A]10 11N e e urr 5.0 V urr 150oC 25oC 60 C C ain ain -55oC NT , DrD 1 , DrD 1 — I I N * N 1o. t2e5s0:μs Pulse Test * N 1o. tVeDsS: = 20V -C 2. TC = 25oC 2. 250μs Pulse Test h 0.1 0.1 a 0.1 1 10 20 2 4 6 8 n n VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V] e l S Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage u Drain Current and Gate Voltage Variation vs. Source Current p r and Temperature e M 0.7 100 O S ® ance0.6 nt [A] MO []ΩR ,DS(ON)urce On-Resist00..45 VGS = 10V se Drain Curre 10 150oC 25oC SFET Drain-So0.3 VGS = 20V I, ReverS *1N. oVtes := 0V GS 0.2 *Notes: TC = 25oC 1 2. 250μs Pulse Test 0 8 16 24 32 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Body Diode Forward Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 6000 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd V] Crss = Cgd e [ 8 VDS = 120V g s [pF] 4000 Coss *Notes: ce Volta 6 VVDDSS == 340800VV ance 12.. fV =G S1 M= H0Vz Sour pacit 2000 Gate- 4 Ca Ciss , S G V 2 Crss *Notes: ID = 5.4A 0 0 0.1 1 10 100 600 0 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC] ©2009 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FCP11N60N / FCPF11N60NT Rev. C1

F C Typical Performance Characteristics P (Continued) 1 1 N 6 Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation 0 vs. Temperature vs. Temperature N / 1.2 3.0 F C ge P olta nce 2.5 F1 zed] wn V 1.1 zed] sista 2.0 1N BV, [NormaliDSSain-Source Breakdo 01..90 *Notes: R, [NormaliDS(on)Drain-Source On-Re 011...505 *Notes: 60NT — N-C Dr 1. VGS = 0V 1. VGS = 10V ha 2. ID = 1mA 2. ID = 5.4A n 0.8 0.0 n -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 e TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] l S u Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area p r for FCP11N60N for FCPF11N60NT e M 50 100 O 20μs 20μs S 100μs ® 10 ent [A] 10m1mss ent [A] 10 1m10s0μs MOS n Curr 1 Operation in This Area DC n Curr 1 10ms FET , DraiD is Limited by R* NDSo(toens): , Drai D Oisp Leirmaittieodn biny TRh DisS (Aonre)a DC I I 0.1 1. TC = 25oC 0.1 *Notes: 2. TJ = 150oC 1. TC = 25oC 3. Single Pulse 2. TJ = 150oC 3. Single Pulse 0.01 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain-Sou rce Voltage [V] VDS, Drain-Sou rce Voltage [V] Figure 11. Maximum Drain Current vs. Case Temperature 12 9 A] nt [ e urr 6 C n ai Dr I, D 3 0 25 50 75 100 125 150 TC, Case Temperature [oC] ©2009 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FCP11N60N / FCPF11N60NT Rev. C1

F C Typical Performance Characteristics P (Continued) 1 1 N Figure 12. Transient Thermal Response Curve for FCP11N60N 60 N / 2 F C W] 1 P C/] F osponse [[nse ZθJC 00..52 11N6 Z(t), Thermal Re θJCThermal Respo 0.1 S0000...i.000n1521gle pulse * N 123Po...D tZDTeMθJsuJM:tCy -( tFT) aC=c t=1t1o .tP3r2,3D DoMC =*/ WtZ1θ/ tJM2Ca(tx). 0NT — N-C 0.01 h 10-5 10-4 10-3 10-2 10-1 1 an Rt1e, cRteacntagnuglaurla Pr uPlusles eD Duurraattiioonn [[sseecc]] n e l S Figure 13. Transient Thermal Response Curve for FCPF11N60NT u p re 5 M W] O ]C/ 0.5 S oC ® [ponse [se ZθJ 1 0.2 MO mal ResRespon 00..015 PDM t1 SFE Z(t), TherThermal θJC 0.1 S00..i00n21gle pulse * N 12o.. tZDeθsuJ:tCy( tF) a=c 3to.t3r2,o CD/=W t 1M/t2ax. T 3. TJM - TC = PDM * ZθJC(t) 0.01 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tR1,e Rcetactnagnuglualra rP Puulslsee DDuurraattiioonn [[sseecc] ] ©2009 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FCP11N60N / FCPF11N60NT Rev. C1

F C P 1 1 N 6 0 N / F C P F 1 1 N 6 0 N T — N - IG = const. Ch a n n e l Figure 14. Gate Charge Test Circuit & Waveform S u p r e M O S VVDDSS RRLL VVDDSS 9900%% M® O VVGGSS VVDDDD S RR F GG E T 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 15. Resistive Switching Test Circuit & Waveforms V GS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FCP11N60N / FCPF11N60NT Rev. C1

F C P 1 1 N 6 0 N / F DDUUTT ++ C P F 1 VVDDSS 1 N 6 __ 0 N T — II SSDD LLL N - C h a DDrriivveerr n n RR GG e SSaammee TTyyppee l aass DDUUTT VVDDDD Su p VV r GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR e GG M ••IISSDDccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd O S ® M O S F E VVGGSS DDD ===------GGGGGG------aaaaaa------tttttt---eeeeee------ PPPPPP------uuu---uuu---llllll---ssssss---eeeeee------ ---WWWPPP------eee---iii---dddrrr---iiitttooo---hhh---ddd--- 1100VV T (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FCP11N60N / FCPF11N60NT Rev. C1

F C Mechanical Dimensions P 1 1 N 6 0 N / F C P F 1 1 N 6 0 N T — N - C h a n n e l S u p r e M O S ® M O S F E T Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 ©2009 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FCP11N60N / FCPF11N60NT Rev. C1

F C Mechanical Dimensions P 1 1 N 6 0 N / F C P F 1 1 N 6 0 N T — N - C h a n n e l S u p r e M O S ® M O S F E T Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2009 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com FCP11N60N / FCPF11N60NT Rev. C1

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C P AccuPower™ F-PFS™ Sync-Lock™ AX-CAP®* FRFET® ® ®* F BitSiC™ Global Power ResourceSM PowtmerTrench® 11 Build it Now™ GreenBridge™ PowerXS™ TinyBoost® N CCoorreePPOLUWSE™R™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TTiinnyyBCuaclck™® 60 CROSSVOLT™ Gmax™ QS™ TinyLogic® N CTL™ GTO™ Quiet Series™ T TINYOPTO™ CDuErUreXnPt ETEraDn®sfer Logic™ IISntOelPliMLAANXA™R™ Rapid™Configure™ TinyPower™ — DEEcfufoiacSle CPntAoMoRal™Kx®™ MaMneadgr kaBinBegutt ceSkrm™™all Speakers Sound Louder SSaigvninaglW oiuser ™world, 1mW/W/kW at a time™ TTTiirnnayynPWSWiiCreM™™™ N-C TriFault Detect™ ESBC®™ MMMiiIccCrrRooPFOEaCkTO™™UPLER™ SSSmMoluaAtrRitoMTna sSx fT™oAr RYTou™r Success™ TμSReUrEDCesU™RRENT®* han Fairchild® MicroPak2™ SPM® ne FFAaiCrcTh iQldu Sieet mSiecroiensd™uctor® MMiollteiorDnMrivaex™™ SSTupEeArLFTEHT™® UHC® l S FACT® mWSaver® SuperSOT™-3 Ultra FRFET™ u FAST® OptoHiT™ SuperSOT™-6 UniFET™ p FFFPaEsSTtB™vCenocreh™™ OOPPTTOOPLOLAGNICA®R® SSSuuynppcereFrSMEOTOT™S™®-8 VVVoiCslXutaa™glMePalxu™s™ reM XS™ O S ® *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. 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