A Product Line of Diodes Incorporated DMN2300UFD 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max • Low Gate Threshold Voltage V(BR)DSS RDS(on) Max TA = 25°C • Fast Switching Speed (Notes 4) • “Lead Free”, RoHS Compliant (Note 1) 200mΩ @ VGS = 4.5V 1.73A • Halogen and Antimony Free. "Green" Device (Note 2) 20V 260mΩ @ VGS = 2.5V 1.50A • ESD Protected Gate 2KV 400mΩ @ VGS = 1.8V 1.27A • Qualified to AEC-Q101 Standards for High Reliability 500mΩ @ VGS = 1.5V 1.15A Mechanical Data Description and Applications • Case: X1-DFN1212-3 This MOSFET has been designed to minimize the on-state resistance • Case Material: Molded Plastic, “Green” Molding Compound. (RDS(on)) and yet maintain superior switching performance, making it UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish (cid:1755) NiPdAu over Copper leadframe. Solderable • Load switch per MIL-STD-202, Method 208 • Weight: 0.005 grams (approximate) Drain X1-DFN1212-3 Body Diode Gate Gate Protection Source Diode Top View Bottom View Equivalent Circuit Pin-out Top view Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DMN2300UFD-7 KS2 7 8 3000 Notes: 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information KS2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) Date Code Key Year 2011 2012 2013 2014 2015 2016 2017 Code Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DMN2300UFD 1 of 7 September 2011 Datasheet Number: DS35443 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated DMN2300UFD Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V TA = 25°C (Note 4) 1.73 Steady Continuous Drain Current State TA = 85°C (Note 4) ID 1.34 A TA = 25°C (Note 5) 1.21 Pulsed Drain Current (Note 6) IDM 6.0 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit (Note 4) 0.96 W Power Dissipation (Note 5) PD 0.47 W (Note 4) 130 °C/W Thermal Resistance, Junction to Ambient (Note 5) RθJA 265 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 5. Same as note 4, except the device is mounted on minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%. Thermal Characteristics 10 10 W) 9 SRiθnJgAl e= P1u3l6s°eC/W ID(A) @PW=1ms ID(A) RLiDmSit(eOdN) PEAK TRANSIENT POWER ( 345678 RTJθ J-A T (At) = = P R*RθJθAJA*r(t) I, DRAIN CURRENT (A)D 00.0.111 ID(AI) D(@A) D@CI P D(WA)=I 1D@(0AsP) W@=IP1sD(WA=)1 0@0PmsW=1@0PmWs=100µs k), 2 P(p 1 TTJA( M= A2X5)° =C 150°C ID(A) @ Single Pulse PW=10µs 0 0.001 0.00010.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 t1, PULSE DURATION TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Single Pulse Maximum Power Dissipation Fig. 2 SOA, Safe Operation Area DMN2300UFD 2 of 7 September 2011 Datasheet Number: DS35443 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated DMN2300UFD 1 CE D = 0.7 N D = 0.5 A T S D = 0.3 SI D = 0.9 E R AL 0.1 D = 0.1 M R E D = 0.05 H T T N D = 0.02 E NSI0.01 D = 0.01 A R r(t), T D = 0.005 RRDθθuJJtyAA (C=t) y 1=c3 lre6(,t° )CD */ W=R θt1JA/ t2 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 20 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1 μA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS - - ±10 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 0.45 - 0.95 V VDS = VGS, ID = 250μA 200 VGS = 4.5V, ID = 900mA Static Drain-Source On-Resistance RDS (ON) - - 246000 mΩ VVGGSS == 21..58VV,, IIDD == 870000mmAA 500 VGS = 1.5V, ID = 200mA Forward Transfer Admittance |Yfs| 40 - - mS VDS = 3V, ID = 300mA Diode Forward Voltage VSD - 0.7 1.2 V VGS = 0V, IS = 300mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss - 67.62 - pF Output Capacitance Coss - 9.74 - pF fV =D S1 .=0 M25HVz, VGS = 0V, Reverse Transfer Capacitance Crss - 7.58 - pF Gate Resistance Rg - 68.51 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (Note 8) Qg - 0.89 2 nC GGaattee--SDorauirnc eC hCahragreg e QQggds -- 00..1164 -- nnCC IVDG =S 1=A 4 .5V, VDS = 15V, Turn-On Delay Time tD(on) - 4.92 - ns Turn-On Rise Time tr - 6.93 - ns VDS = 10V, ID = 1A Turn-Off Delay Time tD(off) - 21.71 - ns VGS = 10V, RG = 6Ω Turn-Off Fall Time tf - 10.62 - ns Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guarantee by design. DMN2300UFD 3 of 7 September 2011 Datasheet Number: DS35443 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated DMN2300UFD 2.0 2.0 VGS = 4.5V VGS = 2.5V VDS = 5V VGS = 2.0V A) 1.5 VGS = 1.8V A) 1.5 NT ( VGS = 1.5V NT ( E E R R R R CU 1.0 CU 1.0 N N AI AI R R D D I, D 0.5 I, D 0.5 TA = 150°C TA = 125°C TA = 85°C VGS = 1.2V TA = 25°C TA = -55°C 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 V , DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V) DS GS Fig. 4 Typical Output Characteristic Fig. 5 Typical Transfer Characteristic 1 0.6 CE ()Ω VGS = 1.5V CE ()Ω 0.5 VGS = 4.5V N N A 0.8 A T T S S ESI ESI 0.4 R R N- 0.6 N- O O CE CE 0.3 TA = 125°C TA = 150°C R R SOU 0.4 VGS = 1.8V SOU 0.2 N- N- TA = 85°C RAI VGS = 2.5V RAI TA = 25°C D 0.2 D , ON) VGS = 4.5V , ON)0.1 TA = -55°C RDS( 0 RDS( 0 0 0.2 0.4 0.6 0.8 1 0 0.4 0.8 1.2 1.6 2 ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A) Fig. 6 Typical On-Resistance Fig. 7 Typical On-Resistance vs. Drain Current and Gate Voltage vs. Drain Current and Temperature 0.6 0.6 )Ω )Ω ANCE ( 0.5 VGS = 1.8V ANCE ( 0.5 VGS = 1.5V TA = 150°C TA = 125°C T T ESIS 0.4 TA = 125°C TA = 150°C ESIS 0.4 TA = 85°C N-R N-R TA = 25°C O O RCE 0.3 TA = 85°C RCE 0.3 TA = -55°C OU TA = 25°C OU S 0.2 S 0.2 N- N- RAI TA = -55°C RAI R, DDS(ON)0.10 R, DDS(ON)0.10 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Fig. 8 Typical On-Resistance Fig. 9 Typical On-Resistance vs. Drain Current and Temperature vs. Drain Current and Temperature DMN2300UFD 4 of 7 September 2011 Datasheet Number: DS35443 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated DMN2300UFD 1.7 0.6 IVDG =S 5=0 20.m5VA E ()Ω D) 1.5 NC 0.5 R, DRAIN-SOURCE DSONRESISTANCE (NORMALIZE 011...913 VIGDS =V I=D G1 4.S=0. 5A=5V 01m.5AV IVDG =S 1=0 10.m8VA AIN-SOURCE ON-RESISTA 000...234 VIDG S= =5 01m.5AV IVDG =S 1=0 10.m8VA N- DR VGS = 4.5V O 0.7 , SON 0.1 IVDG =S 5=0 20.m5VA ID = 1.0A D R 0.5 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) T , AMBIENT TEMPERATURE (°C) A A Fig. 10 On-Resistance Variation with Temperature Fig. 11 On-Resistance Variation with Temperature 1.2 2.0 V) E ( 1.0 G 1.6 TA A) OL T ( V 0.8 ID = 1mA N OLD URRE 1.2 TA = 25°C ESH 0.6 ID = 250µA E C R C H R 0.8 T U E 0.4 O T S GA , S , H) 0.2 I 0.4 T S( G V 0 0 -50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 12 Gate Threshold Variation vs. Ambient Temperature Fig. 13 Diode Forward Voltage vs. Current 1,000 100,000 TA = 125°C A) A) 10,000 RRENT (n 100 RRENT (n 1,000 TA = 125°C TA = 150°C U U E C TA = 85°C E C TA = 85°C G G KA KA 100 TA = 25°C I, LEADSS 10 TTAA == 2-555°°CC I, LEAGSS 10 TA = -55°C 1 1 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 V , DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V) DS GS Fig. 14 Typical Leakage Current Fig.15 Leakage Current vs. Gate-Source Voltage vs. Drain-Source Voltage DMN2300UFD 5 of 7 September 2011 Datasheet Number: DS35443 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated DMN2300UFD 8 V) GE ( 6 VDS = 15V A ID = 1A T L O V E C R 4 U O S E- T A G 2 , S G V 0 0 0.5 1 1.5 2 2.5 3 Q , TOTAL GATE CHARGE (nC) g Fig. 16 Gate-Charge Characteristics Package Outline Dimensions A X1-DFN1212-3 A3 Dim Min Max Typ A1 A 0.47 0.53 0.50 D A1 0 0.05 0.02 A3 - - 0.13 e b 0.27 0.37 0.32 b1 0.17 0.27 0.22 D 1.15 1.25 1.20 E 1.15 1.25 1.20 b1 e - - 0.80 E (2x) L 0.25 0.35 0.30 All Dimensions in mm L b Suggested Pad Layout X Y Dimensions Value (in mm) C 0.80 X 0.42 Y2 X1 X1 0.32 (2x) Y 0.50 Y1 Y1 0.50 (2x) Y2 1.50 C DMN2300UFD 6 of 7 September 2011 Datasheet Number: DS35443 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

A Product Line of Diodes Incorporated DMN2300UFD MPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com DMN2300UFD 7 of 7 September 2011 Datasheet Number: DS35443 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

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