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  • 型号: STB80NF55-06T4
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
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STB80NF55-06T4产品简介:

ICGOO电子元器件商城为您提供STB80NF55-06T4由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STB80NF55-06T4价格参考。STMicroelectronicsSTB80NF55-06T4封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 55V 80A(Tc) 300W(Tc) D2PAK。您可以下载STB80NF55-06T4参考资料、Datasheet数据手册功能说明书,资料中有STB80NF55-06T4 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 55V 80A D2PAKMOSFET N-Ch 55 Volt 80 Amp

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

80 A

Id-连续漏极电流

80 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STB80NF55-06T4STripFET™ II

数据手册

点击此处下载产品Datasheet

产品型号

STB80NF55-06T4

Pd-PowerDissipation

300 W

Pd-功率耗散

300 W

RdsOn-Drain-SourceResistance

6.5 mOhms

RdsOn-漏源导通电阻

6.5 mOhms

Vds-Drain-SourceBreakdownVoltage

55 V

Vds-漏源极击穿电压

55 V

Vgs-Gate-SourceBreakdownVoltage

+/- 20 V

Vgs-栅源极击穿电压

+/- 20 V

上升时间

155 ns

下降时间

65 ns

不同Id时的Vgs(th)(最大值)

4V @ 250µA

不同Vds时的输入电容(Ciss)

4400pF @ 25V

不同Vgs时的栅极电荷(Qg)

189nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

6.5 毫欧 @ 40A,10V

产品培训模块

http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=26067

产品目录页面

点击此处下载产品Datasheet

产品种类

Power MOSFET Transistors

供应商器件封装

D2PAK

其它名称

497-6558-2
STB80NF55-06T4-ND
STB80NF5506T4

典型关闭延迟时间

125 ns

功率-最大值

300W

包装

带卷 (TR)

商标

STMicroelectronics

安装类型

表面贴装

安装风格

SMD/SMT

导通电阻

6.5 mOhms

封装

Reel

封装/外壳

TO-263-3,D²Pak(2 引线+接片),TO-263AB

封装/箱体

D2PAK-2

工厂包装数量

1000

晶体管极性

N-Channel

最大工作温度

+ 175 C

最小工作温度

- 55 C

标准包装

1,000

正向跨导-最小值

150 S

汲极/源极击穿电压

55 V

漏极连续电流

80 A

漏源极电压(Vdss)

55V

电流-连续漏极(Id)(25°C时)

80A (Tc)

系列

STB80NF55

通道模式

Enhancement

配置

Single

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PDF Datasheet 数据手册内容提取

STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP Ω 2 2 N-channel 55V - 0.005 - 80A - TO-220 /FP - I PAK - D PAK STripFET™ II Power MOSFET General features Type V R I DSS DS(on) D STB80NF55-06 55V <0.0065Ω 80A (1) STB80NF55-06-1 55V <0.0065Ω 80A(1) 23 123 1 STP80NF55-06 55V <0.0065Ω 80A (1) TO-220 TO-220FP STP80NF55-06FP 55V <0.0065Ω 60A (1) 1. Limited by package ■ Exceptional dv/dt capability 3 ■ 100% avalanche tested 1 123 D²PAK I²PAK ■ Application oriented characterization Description Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application Order codes Part number Marking Package Packaging STB80NF55-06T4 B80NF55-06 D²PAK Tape & reel STB80NF55-06-1 B80NF55-06-1 I²PAK Tube STP80NF55-06 P80NF55-06 TO-220 Tube STP80NF55-06FP P80NF55-06FP TO-220FP Tube October 2006 Rev 8 1/17 www.st.com 17

Contents STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17

STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220 / D²/ I²PAK TO-220FP V Drain-source voltage (V = 0) 55 V DS GS V Gate-source voltage ± 20 V GS ID (1) Drain current (continuous) at TC = 25°C 80 60 (2) A ID (1) Drain current (continuous) at TC=100°C 80 42 (2) A IDM(3) Drain current (pulsed) 320 240 (2) A P Total dissipation at T = 25°C 300 45 W TOT C Derating factor 2 0.30 W/°C dv/dt (4) Peak diode recovery voltage slope 7 V/ns E (5) Single pulse avalanche energy 1.3 J AS V Insulation withstand voltage (DC) -- 2500 V ISO TJ Operating junction temperature -55 to 175 °C T Storage temperature stg 1. Limited by Package 2. Limited only by maximum temperature allowed 3. Pulse width limited by safe operating area 4. ) I ≤ 80A, di/dt ≤ 400A/µs, V ≤ V , T ≤ T SD DD (BR)DSS j JMAX 5. Starting T = 25 oC, I = 40A, V = 45V J D DD Table 2. Thermal data Value Symbol Parameter Unit TO-220 / D²/ I²PAK TO-220FP R Thermal resistance junction-case max 0.5 3.33 °C/W thJC R Thermal resistance junction-ambient max 62.5 °C/W thJA Maximum lead temperature for soldering T 300 °C l purpose 3/17

Electrical characteristics STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Dvorlataing-esource breakdown ID = 250µA, VGS= 0 55 V Zero gate voltage drain VDS = Max rating, 1 µA I DSS current (VGS = 0) VDS = Max rating @125°C 10 µA Gate body leakage current IGSS (V = 0) VGS = ±20V ±100 nA DS VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 2 3 4 V Static drain-source on RDS(on) resistance VGS= 10V, ID= 40A 0.005 0.0065 Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS =15V, ID = 40A 150 S C Input capacitance iss 4400 pF Coss Output capacitance VDS =25V, f=1 MHz, VGS=0 1020 pF Reverse transfer Crss 350 pF capacitance Qg Total gate charge V = 44V, I = 80A 142 189 nC DD D Qgs Gate-source charge 29 nC V =10V Q Gate-drain charge GS 60.5 nC gd 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time 27 ns V = 50 V, I = 40A, tr Rise time RDD=4.7Ω, VD =10V 155 ns t Turn-off delay time G GS 125 ns d(off) (see Figure15) t Fall time 65 ns f 4/17

STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Electrical characteristics Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 80 A I (1) Source-drain current (pulsed) 320 A SDM VSD(2) Forward on voltage ISD=80A, VGS=0 1.5 V trr Reverse recovery time ISD=80A, 100 ns Qrr Reverse recovery charge di/dt = 100A/µs, 0.32 µC IRRM Reverse recovery current VDD=35V, TJ = 150°C 6.5 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/17

Electrical characteristics STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220/ Figure 2. Thermal impedance for TO-220/ D²PAK/ I²PAK D²PAK/ I²PAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/17

STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Electrical characteristics Figure 7. Transconductance Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs vs temperature temperature 7/17

Electrical characteristics STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Figure 13. Source-drain diode forward Figure 14. Normalized B vs temperature VDSS characteristics 8/17

STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Test circuit 3 Test circuit Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform 9/17

Package mechanical data STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/17

STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Package mechanical data TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/17

Package mechanical data STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 4º 3 1 12/17

STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Package mechanical data TO-262(I2PAK)MECHANICALDATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 13/17

Package mechanical data STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 F F 1 G H G 2 F 1 2 3 L5 L2 L4 14/17

STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.00980.0137 W 23.7 24.3 0.933 0.956 * on sales type 15/17

Revision history STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP 6 Revision history T able 7. Revision history Date Revision Changes 21-Jun-2004 5 Complete version 13-Mar-2005 6 Package inserted: I2PAK 20-Jul-2006 7 New template, no content change 24-Oct-2006 8 Corrected value on Table 1.: Absolute maximum ratings 16/17

STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 17/17

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: S TMicroelectronics: STB80NF55-06T4 STP80NF55-06 STB80NF55-06-1 STP80NF55-06FP STP80NF55