CSD17310Q5A www.ti.com SLPS255A–FEBRUARY2010–REVISEDJULY2010 30V, N-Channel NexFET™ Power MOSFETs CheckforSamples:CSD17310Q5A FEATURES 1 PRODUCTSUMMARY • Optimizedfor5VGateDrive 2 • UltralowQ andQ VDS DraintoSourceVoltage 30 V g gd Qg GateChargeTotal(4.5V) 8.9 nC • LowThermalResistance Qgd GateChargeGatetoDrain 2.1 nC • AvalancheRated VGS=3V 5.7 mΩ • PbFreeTerminalPlating RDS(on) DraintoSourceOnResistance VGS=4.5V 4.5 mΩ • RoHSCompliant VGS=8V 3.9 mΩ • HalogenFree VGS(th) ThresholdVoltage 1.3 V • SON5-mm×6-mmPlasticPackage ORDERINGINFORMATION APPLICATIONS Device Package Media Qty Ship SON5-mm×6-mm 13-Inch Tapeand • NotebookPointofLoad CSD17310Q5A 2500 PlasticPackage Reel Reel • Point-of-LoadSynchronousBuckin Networking,TelecomandComputingSystems ABSOLUTEMAXIMUMRATINGS • OptimizedforSynchronousFETApplications TA=25°Cunlessotherwisestated VALUE UNIT VDS DraintoSourceVoltage 30 V DESCRIPTION VGS GatetoSourceVoltage +10/–8 V The NexFET™ power MOSFET has been designed ContinuousDrainCurrent,TC=25°C 100 A to minimize losses in power conversion applications, ID ContinuousDrainCurrent(1) 21 A andoptimizedfor5Vgatedriveapplications. IDM PulsedDrainCurrent,TA=25°C(2) 134 A PD PowerDissipation(1) 3.1 W TopView TJ, OperatingJunctionandStorage –55to150 °C TSTG TemperatureRange S 1 8 D AvalancheEnergy,singlepulse EAS ID=58A,L=0.1mH,RG=25Ω 168 mJ S 2 7 D (1) RqJA=40°C/Won 1-inch2(6.45-cm2), 2-oz.(0.071-mmthick) Cupadona0.06-inch(1.52-mm)thickFR4PCB. S 3 6 D (2) Pulseduration≤300ms,dutycycle≤2% D G 4 5 D P0093-01 Text4Spacing Text4Spacing R vsV GATECHARGE DS(on) GS 16 8 ΩR - On-State Resistance - mDS(on) 1112468024 TC = 25°C TC = 125°C ID = 20A V - Gate-to-Source Voltage - VGS 1234567 IVDD =S 2=0 1A5V 0 0 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage - V G006 Qg - Gate Charge - nC G003 1 Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexas Instrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet. NexFETisatrademarkofTexasInstruments. 2 PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©2010,TexasInstrumentsIncorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarilyincludetestingofallparameters.

CSD17310Q5A SLPS255A–FEBRUARY2010–REVISEDJULY2010 www.ti.com Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. ELECTRICAL CHARACTERISTICS (T =25°Cunlessotherwisestated) A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT StaticCharacteristics BV DraintoSourceVoltage V =0V,I =250mA 30 V DSS GS D I DraintoSourceLeakageCurrent V =0V,V =24V 1 mA DSS GS DS I GatetoSourceLeakageCurrent V =0V,V =+10/-8V 100 nA GSS DS GS V GatetoSourceThresholdVoltage V =V ,I =250mA 0.9 1.3 1.8 V GS(th) DS GS D V =3V,I =20A 5.7 7.8 mΩ GS D R DraintoSourceOnResistance V =4.5V,I =20A 4.5 5.9 mΩ DS(on) GS D V =8V,I =20A 3.9 5.1 mΩ GS D g Transconductance V =15V,I =20A 85 S fs DS D DynamicCharacteristics C InputCapacitance 1200 1560 pF iss C OutputCapacitance V =0V,V =15V,f=1MHz 630 820 pF oss GS DS C ReverseTransferCapacitance 59 77 pF rss R SeriesGateResistance 0.9 1.8 Ω G Q GateChargeTotal(4.5V) 8.9 11.6 nC g Q GateChargeGatetoDrain 2.1 nC gd V =15V,I =20A DS DS Q GateChargeGatetoSource 2.7 nC gs Q GateChargeatVth 1.4 nC g(th) Q OutputCharge V =12.8V,V =0V 15.9 nC oss DS GS t TurnOnDelayTime 6.5 ns d(on) tr RiseTime VDS=15V,VGS=4.5V,IDS=20A, 11.6 ns td(off) TurnOffDelayTime RG=2Ω 15 ns t FallTime 5 ns f DiodeCharacteristics V DiodeForwardVoltage I =20A,V =0V 0.85 1 V SD SD GS Q ReverseRecoveryCharge 21 nC rr V =12.8V,I =20A,di/dt=300A/ms DD F t ReverseRecoveryTime 22 ns rr THERMAL CHARACTERISTICS (T =25°Cunlessotherwisestated) A PARAMETER MIN TYP MAX UNIT R ThermalResistanceJunctiontoCase(1) 1.9 °C/W qJC R ThermalResistanceJunctiontoAmbient(1)(2) 51 °C/W qJA (1) R isdeterminedwiththedevicemountedona1-inch2(6.45-cm2),2-oz.(0.071-mmthick)Cupadona1.5-inch×1.5-inch(3.81-cm× qJC 3.81-cm),0.06-inch(1.52-mm)thickFR4PCB.R isspecifiedbydesign,whereasR isdeterminedbytheuser’sboarddesign. qJC qJA (2) DevicemountedonFR4materialwith1-inch2(6.45-cm2),2-oz.(0.071-mmthick)Cu. Text and br Added for Spacing Text and br Added for Spacing Text and br Added for Spacing Text and br Added for Spacing 2 SubmitDocumentationFeedback Copyright©2010,TexasInstrumentsIncorporated ProductFolderLink(s):CSD17310Q5A

CSD17310Q5A www.ti.com SLPS255A–FEBRUARY2010–REVISEDJULY2010 GATE Source GATE Source N N - - C C h h a a n n MaxR =51°C/W MaxR =123°C/W 5x qJA 5x qJA 6 whenmountedon 6 whenmountedona Q Q FN 1inch2(6.45cm2)of FN minimumpadareaof TT 2-oz.(0.071-mmthick) TT 2-oz.(0.071-mmthick) A A M Cu. M Cu. A I X N R R e e v v 3 DRAIN 3 DRAIN M0137-01 M0137-02 TYPICAL MOSFET CHARACTERISTICS (T =25°Cunlessotherwisestated) A 10 e c n a d 1 e p m 0.5 al I 0.3 m er Th 0.1 0.1 Duty Cycle = t1/t2 d e 0.05 z ali P m 0.02 Nor 0.01 t1 - 0.01 t2 A ZqJ Single Pulse Typical RqJA= 98°C/W (min Cu) TJ= P´ZqJA´RqJA 0.001 0.001 0.01 0.1 1 10 100 1k t - Pulse Duration - s p G012 Figure1. TransientThermalImpedance Copyright©2010,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLink(s):CSD17310Q5A

CSD17310Q5A SLPS255A–FEBRUARY2010–REVISEDJULY2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (T =25°Cunlessotherwisestated) A TEXTADDEDFORSPACING TEXTADDEDFORSPACING 60 60 VDS = 5V nt - A 50 nt - A 50 TC = 125°C urre 40 VGS = 8V urre 40 C C ource 30 VGS = 4.5V ource 30 o-S VGS = 3.5V o-S TC = 25°C - Drain-tDS 1200 VVGGSS == 23.V5V - Drain-tDS 1200 TC = -55°C I I 0 0 0 0.2 0.4 0.6 0.8 1 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 VDS - Drain-to-Source Voltage - V G001 VGS - Gate-to-Source Voltage - V G002 Figure2.SaturationCharacteristics Figure3.TransferCharacteristics TEXTADDEDFORSPACING TEXTADDEDFORSPACING 8 3 ID = 20A f = 1MHz e - V 7 VDS = 15V 2.5 VGS = 0V ag 6 F Coss = Cds + Cgd Gate-to-Source Volt 345 C - Capacitance - n 1.125 Ciss = Cgd + Cgs - GS 2 0.5 Crss = Cgd V 1 0 0 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 Qg - Gate Charge - nC G003 VDS - Drain-to-Source Voltage - V G004 Figure4.GateCharge Figure5.Capacitance TEXTADDEDFORSPACING TEXTADDEDFORSPACING 1.8 16 1.6 ID = 250µA Ω 14 ID = 20A m e - V 1.4 ce - 12 g n Volta 1.2 sista 10 hold 1 e Re 8 TC = 125°C V - ThresGS(th) 0000....2468 R - On-StatDS(on) 246 TC = 25°C 0 0 -75 -25 25 75 125 175 0 1 2 3 4 5 6 7 8 9 10 TC - Case Temperature - °C G005 VGS - Gate-to-Source Voltage - V G006 Figure6.ThresholdVoltagevs.Temperature Figure7.On-StateResistancevs.Gate-to-SourceVoltage 4 SubmitDocumentationFeedback Copyright©2010,TexasInstrumentsIncorporated ProductFolderLink(s):CSD17310Q5A

CSD17310Q5A www.ti.com SLPS255A–FEBRUARY2010–REVISEDJULY2010 TYPICAL MOSFET CHARACTERISTICS (continued) (T =25°Cunlessotherwisestated) A TEXTADDEDFORSPACING TEXTADDEDFORSPACING 1.6 100 ID = 20A ate Resistance 11..124 VGS = 8V ain Current - A 110 TC = 125°C St Dr 0.1 alized On- 00..68 Source-to- 0.01 TC = 25°C orm - D 0.001 N 0.4 IS 0.2 0.0001 -75 -25 25 75 125 175 0 0.2 0.4 0.6 0.8 1 TC - Case Temperature - °C G007 VSD - Source-to-Drain Voltage - V G008 Figure8.NormalizedOn-StateResistancevs.Temperature Figure9.TypicalDiodeForwardVoltage TEXTADDEDFORSPACING TEXTADDEDFORSPACING 1k 1k Source Current - A 11000 11m0mss alanche Current - A 100 TC = 25°C o- 1 110000m1s Av Drain-t Abyre RaD LSi(moni)ted 1s Peak 10 TC = 125°C - DS 0.1 Single Pulse - AV) I Typical RθJA = 98°C/W (min Cu) DC I( 0.01 1 0.01 0.1 1 10 100 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage - V G009 t(AV) - Time in Avalanche - ms G010 Figure10.MaximumSafeOperatingArea Figure11.SinglePulseUnclampedInductiveSwitching TEXTADDEDFORSPACING 120 nt - A 100 e urr 80 C e c our 60 S o- ain-t 40 Dr - DS 20 I 0 -50 -25 0 25 50 75 100 125 150 175 TC - Case Temperature - °C G011 Figure12. MaximumDrainCurrentvs.Temperature Copyright©2010,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLink(s):CSD17310Q5A

CSD17310Q5A SLPS255A–FEBRUARY2010–REVISEDJULY2010 www.ti.com MECHANICAL DATA Q5A Package Dimensions E2 L H K q 1 8 8 1 2 7 7 2 e D1 D2 3 6 6 3 5 4 5 4 L1 b Top View Side View Bottom View q E1 A c E Front View M0135-01 MILLIMETERS DIM MIN NOM MAX A 0.90 1.00 1.10 b 0.33 0.41 0.51 c 0.20 0.25 0.34 D1 4.80 4.90 5.00 D2 3.61 3.81 4.02 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E2 3.38 3.58 3.78 e 1.17 1.27 1.37 H 0.41 0.56 0.71 K 1.10 L 0.51 0.61 0.71 L1 0.06 0.13 0.20 q 0° 12° 6 SubmitDocumentationFeedback Copyright©2010,TexasInstrumentsIncorporated ProductFolderLink(s):CSD17310Q5A

CSD17310Q5A www.ti.com SLPS255A–FEBRUARY2010–REVISEDJULY2010 MILLIMETERS INCHES RecommendedPCBPattern DIM MIN MAX MIN MAX F1 F1 6.205 6.305 0.244 0.248 F6 F7 F2 4.46 4.56 0.176 0.18 F3 4.46 4.56 0.176 0.18 5 4 9 5 F4 0.65 0.7 0.026 0.028 F F F5 0.62 0.67 0.024 0.026 F6 0.63 0.68 0.025 0.027 2 11 3 F F F F7 0.7 0.8 0.028 0.031 F8 0.65 0.7 0.026 0.028 F9 0.62 0.67 0.024 0.026 8 1 F10 4.9 5 0.193 0.197 F11 4.46 4.56 0.176 0.18 F10 8 4 F F M0139-01 For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCBLayoutTechniques. Q5A Tape and Reel Information 0 1 K0 0. ± 0.30 ±0.05 4.00 ±0.10 (See Note 1) 5 7 2.00 ±0.05 Ø 1.50 +0.10 1. –0.00 0 3 0. ± 0 B0 2.0 1 5 0 0. ± 0 5 5. A0 8.00 ±0.10 R 0.30 MAX Ø 1.50 MIN R 0.30TYP A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 M0138-01 Notes: 1. 10-sprockethole-pitchcumulativetolerance±0.2 2. Cambernottoexceed1mmin100mm,noncumulativeover250mm 3. Material:blackstatic-dissipativepolystyrene 4. Alldimensionsareinmm(unlessotherwisespecified) 5. A0andB0measuredonaplane0.3mmabovethebottomofthepocket Copyright©2010,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLink(s):CSD17310Q5A

CSD17310Q5A SLPS255A–FEBRUARY2010–REVISEDJULY2010 www.ti.com REVISION HISTORY ChangesfromOriginal(February2010)toRevisionA Page • UpdatedtheQ5APackageDimensionstable.DIMcMAXwas0.30,DIMD2MAXwas3.96,DIMeMINwasblank MAXwasblank,DIMHNOMwas0.51MAXwas0.61 ....................................................................................................... 6 • DeletedNote6fromtheQ5ATapeandReelInformation-"MSL1260°C(IRandconvection)PbFreflow compatible" ........................................................................................................................................................................... 7 • DeletedthePackageMarkingInformationsection ............................................................................................................... 7 8 SubmitDocumentationFeedback Copyright©2010,TexasInstrumentsIncorporated ProductFolderLink(s):CSD17310Q5A

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) CSD17310Q5A ACTIVE VSONP DQJ 8 2500 Pb-Free (RoHS SN Level-1-260C-UNLIM -55 to 150 CSD17310 Exempt) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

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