AOTF18N65 650V,18A N-Channel MOSFET General Description Product Summary The AOTF18N65 is fabricated using an advanced high VDS 750V@150℃ voltage MOSFET process that is designed to deliver high I (at V =10V) 18A D GS levels of performance and robustness in popular AC-DC R (at V =10V) < 0.39W DS(ON) GS applications.By providing low R , C and C along DS(on) iss rss with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g For Halogen Free add "L" suffix to part number: AOTF18N65L Top View TO-220F D G D S S AOTF18N65 G Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol AOTF18N65 Units Drain-Source Voltage V 650 V DS Gate-Source Voltage V ±30 V GS Continuous Drain TC=25°C I 18* Current T =100°C D 12* A C Pulsed Drain Current C I 80 DM Avalanche Current C I 6.3 A AR Repetitive avalanche energy C E 595 mJ AR Single pulsed avalanche energy G E 1190 mJ AS Peak diode recovery dv/dt dv/dt 5 V/ns T =25°C 50 W C P Power Dissipation B Derate above 25oC D 0.4 W/ oC Junction and Storage Temperature Range T, T -55 to 150 °C J STG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds T 300 °C L Thermal Characteristics Parameter Symbol AOTF18N65 Units Maximum Junction-to-Ambient A,D RqJA 65 °C/W Maximum Junction-to-Case RqJC 2.5 °C/W * Drain current limited by maximum junction temperature. Rev0: Jul 2011 www.aosmd.com Page 1 of 5

AOTF18N65 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250µA, V =0V, T=25°C 650 BV Drain-Source Breakdown Voltage D GS J V DSS I =250µA, V =0V, T=150°C 750 D GS J BV Breakdown Voltage Temperature /∆TDJSS Coefficient ID=250µA, VGS=0V 0.7 V/ oC V =650V, V =0V 1 IDSS Zero Gate Voltage Drain Current VDS=520V, TG=S125°C 10 m A DS J I Gate-Body leakage current V =0V, V =±30V ±100 nA GSS DS GS V Gate Threshold Voltage V =5V, I =250m A 2.9 3.5 4.5 V GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =9A 0.32 0.39 W DS(ON) GS D g Forward Transconductance V =40V, I =9A 20 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.69 1 V SD S GS I Maximum Body-Diode Continuous Current* 18 A S I Maximum Body-Diode Pulsed Current 80 A SM DYNAMIC PARAMETERS C Input Capacitance 2270 3027 3785 pF iss C Output Capacitance V =0V, V =25V, f=1MHz 170 271 370 pF oss GS DS C Reverse Transfer Capacitance 12 22 32 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.7 1.4 2.1 W g GS DS SWITCHING PARAMETERS Q Total Gate Charge 44 56 68 nC g Q Gate Source Charge V =10V, V =520V, I =18A 9 12.4 15 nC gs GS DS D Q Gate Drain Charge 9 19.6 30 nC gd t Turn-On DelayTime 54 ns D(on) t Turn-On Rise Time V =10V, V =325V, I =18A, 83 ns r GS DS D ttDD((ooffff)) TTuurrnn--OOffff DDeellaayyTTiimmee RRGG==2255WW 114499 nnss t Turn-Off Fall Time 71 ns f trr Body Diode Reverse Recovery Time IF=18A,dI/dt=100A/m s,VDS=100V 520 655 790 ns Qrr Body Diode Reverse Recovery Charge IF=18A,dI/dt=100A/m s,VDS=100V 8 10 12 m C A. The value of RqJAis measured with the device in a still air environment with TA =25°C. B. The power dissipation P is based on T =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150°C, Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25°C. J D. The RqJAis the sum of the thermal impedance from junction to case RqJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) G. L=60mH, I =6.3A, V =150V, R =25Ω, Starting T=25°C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Jul 2011 www.aosmd.com Page 2 of 5

AOTF18N65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 100 10V V =40V -55°C DS 30 6V 10 I(A)D 20 5.5V I(A)D 125°C 1 10 V =5V GS 25°C 0 0.1 0 5 10 15 20 25 30 0 2 4 6 8 10 Fig 1: On-RVeDgSio(nV oClthsa)racteristics Figure 2: TraVnGsSf(eVro Clths)aracteristics 0.6 3 0.5 VGS=10V stance 2.5 VIDG=S9=A10V si 2 e ) R W( n- N) 0.4 O 1.5 RDS(O alized 1 m 0.3 or N 0.5 0.2 0 0 10 20 30 40 -100 -50 0 50 100 150 200 I (A) Temperature (°C) Figure 3: On-ResistanceD vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature VVoollttaaggee 1.2 1.0E+02 1.0E+01 ed) 1.1 1.0E4+000 z mali A) 125°C Nor 1 I(S 1.0E-01 ( SS 1.0E-02 25°C D V 0.9 B 1.0E-03 0.8 1.0E-04 -100 -50 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0 TJ (°C) VSD(Volts) Figure 5:Break Down vs. Junction Temperature Figure 6: Body-Diode Characteristics (Note E) Rev0: Jul 2011 www.aosmd.com Page 3 of 5

AOTF18N65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 C iss V =520V 12 ID=S18A D F) 1000 p olts) 9 nce ( Coss V a (S cit VG 6 pa a 100 C C rss 3 0 10 0 20 40 60 80 100 0.1 1 10 100 Qg(nC) VDS(Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 20 100 10m s R DS(ON) limited A) 15 10 100m s (D g I ent ratin 10 (Amps)D 1 DC 110mmss urr I 0.1s C 5 0.1 1s T =150°C J(Max) T =25°C C 0 0.01 0 25 50 75 100 125 150 1 10 100 1000 TTCCAASSEE((°°CC)) VVDDSS((VVoollttss)) Figure 9: Current De-rating (Note B) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF18N65 (Note F) 10 D=T /T In descending order on nsient nce 1 TRJq,JPCK==2T.C5+°PCDM/W.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Trasta d si ee malizmal R 0.1 PD Norher JCT 0.01 T Zq on T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF18N65 (Note F) Rev0: Jul 2011 www.aosmd.com Page 4 of 5

AOTF18N65 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds E A R = 1/2 LI AR BVDSS Id Vds ++ VVggss Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I t Isd F dI/dt rr + I Vgs VDC Vdd RM Vdd - Vds Ig Rev0: Jul 2011 www.aosmd.com Page 5 of 5