AON6403 30V P-Channel MOSFET General Description Product Summary The AON6403 combines advanced trench MOSFET VDS -30V technology with a low resistance package to provide I (at V = -10V) -85A D GS extremely low RDS(ON). This device is ideal for load switch R (at V = -10V) < 3.1mW DS(ON) GS and battery protection applications. R (at V = -4.5V) < 4.3mW DS(ON) GS 100% UIS Tested 100% R Tested g DFN5X6 D Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V ±20 V GS Continuous Drain TC=25°C I -85 Current G T =100°C D -67 A C Pulsed Drain Current C I -280 DM Continuous Drain TA=25°C I -21 A Current T =70°C DSM -17 A Avalanche Current C I -72 A AR Repetitive avalanche energy L=0.1mH C E 259 mJ AR T =25°C 83 C P W Power Dissipation B T =100°C D 33 C T =25°C 2.3 A P W Power Dissipation A T =70°C DSM 1.4 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 14 17 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 40 55 °C/W Maximum Junction-to-Case Steady-State RqJC 1 1.5 °C/W Rev 2: November 2010 www.aosmd.com Page 1 of 6

AON6403 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250m A, V =0V -30 V DSS D GS V =-30V, V =0V -1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C -5 J I Gate-Body leakage current V =0V, V = ±20V ±100 nA GSS DS GS V Gate Threshold Voltage V =V I =-250m A -1.2 -1.7 -2.2 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -280 A D(ON) GS DS V =-10V, I =-20A 2.6 3.1 GS D mW R Static Drain-Source On-Resistance T=125°C 3.6 4.4 DS(ON) J V =-4.5V, I =-20A 3.5 4.3 mW GS D g Forward Transconductance V =-5V, I =-20A 82 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.7 -1 V SD S GS I Maximum Body-Diode Continuous Current -85 A S DYNAMIC PARAMETERS C Input Capacitance 6100 7600 9120 pF iss C Output Capacitance V =0V, V =-15V, f=1MHz 930 1320 1720 pF oss GS DS C Reverse Transfer Capacitance 630 1050 1470 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1 2 4 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 130 163 196 nC g Q (4.5V) Total Gate Charge 63 79 95 nC g V =-10V, V =-15V, I =-20A Q Gate Source Charge GS DS D 18 22 26 nC gs Q Gate Drain Charge 20 33 46 nC gd t Turn-On DelayTime 13 ns D(on) t Turn-On Rise Time V =-10V, V =-15V, 18 ns r GS DS t Turn-Off DelayTime R =0.75W , R =3W 135 ns D(off) L GEN t Turn-Off Fall Time 52 ns f trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/m s 21 26 32 ns Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/m s 63 78 94 nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation P is based on T =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25°C.Maximum UIS current limited by test equipment. J D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A Rev 2: Nov. 2010 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: November 2010 www.aosmd.com Page 2 of 6

AON6403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 150 -3.5V V =-5V DS 120 -4V 120 -10V -3V 90 90 -I (A)D 60 -I(A)D 60 125°C 30 V =-2.5V 30 GS 25°C 0 0 0 1 2 3 4 5 0 1 2 3 4 5 -VDS (Volts) -VGS(Volts) Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E) 5 1.6 V =-10V GS e nc ID=-20A 4 a 1.4 VGS=-4.5V st ) si e WWWWm R 17 (N) 3 On- 1.2 5 RDS(O zed VGS=-42.5V 2 VGS=-10V mali 1 ID=-201A0 or N 1 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 I (A) D Temperature (°C) 0 Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Tem1p8erature Voltage (Note E) (Note E) 9 1.0E+02 I =-20A 8 D 1.0E+01 7 40 1.0E+00 ) 6 WWWWm A) 1.0E-01 125°C (ON) 5 125°C -I (S 1.0E-02 RDS( 4 25°C 1.0E-03 3 2 25°C 1.0E-04 1 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 -VGS (Volts) -VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E) (Note E) Rev 2: November 2010 www.aosmd.com Page 3 of 6

AON6403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 12000 VDS=-15V 10000 8 I =-20A D C iss F) 8000 V (Volts)GS 46 acitance (p 6000 - Cap 4000 Coss 2 2000 C rss 0 0 0 30 60 90 120 150 180 0 5 10 15 20 25 30 Q (nC) -V (Volts) g DS Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000.0 400 350 100.0 RDS(ON) 10m s 10m s 300 TJ(Max)=150°C limited T =25°C 100m s C Amps) 10.0 DC 110mmss er (W) 220500 175 (D 1.0 ow 2 -I P 150 10 100 0.1 T =150°C J(Max) T =25°C 50 C 0.0 0 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 -V (Volts) 0 DS Pulse Width (s) 18 Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to- Operating Area (Note F) Case (Note F) 10 D=T /T In descending order on nt TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e nsi nce RqJC=1.5°C/W 40 Tra sta 1 d si e e z R mali mal Nor her 0.1 PD CT J T Zqqqq on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: November 2010 www.aosmd.com Page 4 of 6

AON6403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 230.0 90 ent 200.0 80 Peak Avalanche Curr 11181470000....0000 TA=150°C TA=2T5A°=C100°C wer Dissipation (W)3456700000 (A) AR 50.0 TA=125°C Po1200 -I 20.0 0 0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150 Time in avalanche, tA (s) TCASE (°C) Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F) C) 100 10000 T =25°C A 80 1000 A) ating I(D 60 wer (W) 100 175 urrent r 40 Po 10 102 C - 20 1 0 0.0001 0.01 1 100 10000 0 25 50 75 100 125 150 0 TCASE (°C) Pulse Width (s) 18 Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to- Ambient (Note H) 10 D=T /T In descending order on nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e nsi nce 1 RqJA=55°C/W 40 Tra sta d si e e z R 0.1 mali mal NorATher 0.01 PD J Zqqqq Single Pulse T on T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 2: November 2010 www.aosmd.com Page 5 of 6

AON6403 Gate Charge Test Circuit & Waveform Vgs Qg - -10V VDC - Qgs Qgd + Vds VDC + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds ton toff Vgs td(on) tr td(off) tf - Vgs DUT Vdd 90% VDC Rg + Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = 1/2 LI2 AR AR Vds Id Vds Vgs - BVDSS Vgs Vdd VDC Rg + Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L -Isd -I trr Isd F dI/dt + -I Vgs VDC Vdd RM Vdd - -Vds Ig Rev 2: November 2010 www.aosmd.com Page 6 of 6