SUM110P06-07L www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET V (V) R (Ω) I (A) d DS DS(on) D • Package with low thermal resistance 0.0069 at V = -10 V GS -60 -110 • Material categorization: 0.0088 at V = -4.5 V GS for definitions of compliance please see www.vishay.com/doc?99912 S TO-263 G SS P-Channel MOSFET DD GG Top View D Ordering Information: SUM110P06-07L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V ± 20 GS Continuous Drain Current d TC = 25 °C -110 I (TJ = 175 °C) TC = 125 °C D -95 A Pulsed Drain Current I -240 DM Avalanche Current I -75 AS L = 0.1 mH Single Pulse Avalanche Energy a E 281 mJ AS T = 25 °C c 375 C Power Dissipation P W T = 25 °C b D 3.75 A Operating Junction and Storage Temperature Range T , T -55 to +175 °C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL UNIT Junction-to-Ambient PCB mount b R 40 thJA °C/W Junction-to-Case R 0.4 thJC Notes a. Duty cycle ≤ 1 %. b. When mounted on 1" square PCB (FR4 material). c. See SOA curve for voltage derating. d. Limited by package. S15-1278-Rev. D, 08-Jun-15 1 Document Number: 72439 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUM110P06-07L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 μA -60 - - DS GS D V Gate Threshold Voltage V V = V , I = -250 μA -1 - -3 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = ± 20 V - - ± 100 nA GSS DS GS V = -60 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I V = -60 V, V = 0 V, T = 125 °C - - -50 μA DSS DS GS J V = -60 V, V = 0 V, T = 175 °C - - -250 DS GS J On-State Drain Current a I V = -5 V, V = -10 V -120 - - A D(on) DS GS V = -10 V, I = -30 A - 0.0055 0.0069 GS D V = -10 V, I = -30 A, T = 125 °C - - 0.0115 Drain-Source On-State Resistance a R GS D J Ω DS(on) V = -10 V, I = -30 A, T = 175 °C - - 0.0138 GS D J V = -4.5 V, I = -20 A - 0.0070 0.0088 GS D Forward Transconductance a g V = -15 V, I = -50 A 20 - - S fs DS D Dynamic b Input Capacitance C - 11 400 - iss Output Capacitance C V = 0 V, V = -25 V, f = 1 MHz - 1200 - pF oss GS DS Reverse Transfer Capacitance C - 900 - rss Total Gate Charge c Q - 230 345 g Gate-Source Charge c Q V = -30 V, V = -10 V, I = -110 A - 50 - nC gs DS GS D Gate-Drain Charge c Q - 60 - gd Gate Resistance R f = 1 MHz - 3 - Ω g Turn-On Delay Time c t - 20 30 d(on) RTuisren -TOimff eD celay Time c tdt(orff) ID ≅ -1V1D0D A= ,- V3G0 EVN, =R L-1 =0 0V.2, 7R gΩ = 1 Ω -- 12150 24000 ns Fall Time c t - 50 100 f Drain-Source Body Diode Characteristics (T = 25 °C b) C Continuous Current I - - -110 S A Pulsed Current I - - -240 SM Forward Voltage a V I = -85 A, V = 0 V - -1 -1.5 V SD F GS Reverse Recovery Time t - 91 137 ns rr Peak Reverse Recovery Charge I I = -85 A, dI/dt = 100 A/μs - -6 -9 A RM(REC) F Reverse Recovery Charge Q - 0.21 0.44 μC rr Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1278-Rev. D, 08-Jun-15 2 Document Number: 72439 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUM110P06-07L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 200 VGS = 10 V thru 5 V 160 160 urrent (A) 120 4 V Current (A) 120 - Drain CD 80 -I Drain D 80 TC = 125 °C I 40 40 25 °C 3 V -55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 250 0.016 TC = -55 °C 0.014 200 ductance (S) 150 25 °C sistance () 00..001102 scon 125 °C n-Re 0.008 VGS = 4.5 V Tran 100 - O 0.006 - on) gfs DS( 0.004 VGS = 10 V 50 R 0.002 0 0.000 0 15 30 45 60 75 90 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 14 000 20 12 000 Ciss e (V) 16 IVDD =S 1=1 300 A V g e (pF)10 000 e Volta 12 c 8000 c citan Sour - CapaC 46000000 Gate-to- 8 Coss Crss -GS 4 2000 V 0 0 0 10 20 30 40 50 60 0 50 100 150 200 250 300 350 400 450 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S15-1278-Rev. D, 08-Jun-15 3 Document Number: 72439 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUM110P06-07L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 75 VGS = 10 V ed) ID = 30 A ID = 250 µA z 1.7 72 ali m or N (ce 1.4 (V) 69 n S a S Resist 1.1 V(BR)D 66 n- O - on) 0.8 63 S( D R 0.5 60 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Drain Source Breakdown vs. Junction Temperature 1000 200 100 150 A) Package Limited A) nt ( (DAV 10 IAV (A) at TA = 25 °C Curre 100 I n ai Dr - D 1 IAV (A) at TA = 150 °C I 50 0.1 0 0.00001 0.0001 0.001 0.01 0.1 1 0 25 50 75 100 125 150 175 tin (s) TC - Case Temperature (°C) Avalanche Current vs. Time Maximum Avalanche and Drain Current vs. Case Temperature 100 1000 Limited by R (DSon)* 10 µs 100 ent (A) nt (A) 100 µs ce Curr 10 TJ = 150 °C TJ = 25 °C n Curre 10 11 0m mss - SourIS - DraiID 1 100 ms, DC TC = 25 °C Single Pulse 1 0.1 0.0 0.3 0.6 0.9 1.2 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) * VGS minimum VGS at which RDS(on)isspecified Source-Drain Diode Forward Voltage Safe Operating Area S15-1278-Rev. D, 08-Jun-15 4 Document Number: 72439 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUM110P06-07L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 nt 0.2 e e Transiedance 0.1 Notes: malized EffectivThermal Imp 0.1 Sin0g.0le02 .P0u5lse 1P. DDMuty Cyt1clet,2 D = tt12 Nor 23.. TPJe Mr U- TnAit =B aPsDeM =Z tRhJthAJ(At) = 62.5°C/W 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72439. S15-1278-Rev. D, 08-Jun-15 5 Document Number: 72439 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- A E c2 2 3 E1 6 -A- L 2D K D 4 D E3 1 D D L 3 L A A b2 c e b Detail “A” E2 0.010 M A M 2 PL 5° INCHES MILLIMETERS 0° - L4 DIM. MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 L1 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 DETAIL A (ROTATED 90°) Thin lead 0.013 0.018 0.330 0.457 c* Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 b c1 b1 Thick lead 0.023 0.027 0.584 0.685 M c2 0.045 0.055 1.143 1.397 c1 c D 0.340 0.380 8.636 9.652 SECTION A-A D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 Notes L 0.575 0.625 14.605 15.875 1. Plane B includes maximum features of heat sink tab and plastic. L1 0.090 0.110 2.286 2.794 2. No more than 25 % of L1 can fall above seating plane by L2 0.040 0.055 1.016 1.397 max. 8 mils. L3 0.050 0.070 1.270 1.778 3. Pin-to-pin coplanarity max. 4 mils. L4 0.010 BSC 0.254 BSC 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. M - 0.002 - 0.050 5. Use inches as the primary measurement. ECN: T13-0707-Rev. K, 30-Sep-13 6. This feature is for thick lead. DWG: 5843 Revison: 30-Sep-13 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 (10.668) 5 7) 5 1 3 0 0. 9. ( 0.635 16.129) ( 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 www.vishay.com 11-Apr-05 1

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