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  • 型号: STP5NK50ZFP
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STP5NK50ZFP产品简介:

ICGOO电子元器件商城为您提供STP5NK50ZFP由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STP5NK50ZFP价格参考¥4.66-¥4.66。STMicroelectronicsSTP5NK50ZFP封装/规格:晶体管 - FET,MOSFET - 单, 通孔 N 沟道 500V 4.4A(Tc) 70W(Tc) TO-220FP。您可以下载STP5NK50ZFP参考资料、Datasheet数据手册功能说明书,资料中有STP5NK50ZFP 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 500V 4.4A TO-220FPMOSFET N-Ch, 500V-1.22ohms Zener SuperMESH 4.4

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

4.4 A

Id-连续漏极电流

4.4 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STP5NK50ZFPSuperMESH™

数据手册

点击此处下载产品Datasheet

产品型号

STP5NK50ZFP

Pd-PowerDissipation

25 W

Pd-功率耗散

25 W

RdsOn-Drain-SourceResistance

1.5 Ohms

RdsOn-漏源导通电阻

1.5 Ohms

Vds-Drain-SourceBreakdownVoltage

500 V

Vds-漏源极击穿电压

500 V

Vgs-Gate-SourceBreakdownVoltage

+/- 30 V

Vgs-栅源极击穿电压

30 V

上升时间

10 ns

下降时间

15 ns

不同Id时的Vgs(th)(最大值)

4.5V @ 50µA

不同Vds时的输入电容(Ciss)

535pF @ 25V

不同Vgs时的栅极电荷(Qg)

28nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

1.5 欧姆 @ 2.2A,10V

产品种类

MOSFET

供应商器件封装

TO-220FP

其它名称

497-12613-5
STP5NK50ZFP-ND

其它有关文件

http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1167/PF67397?referrer=70071840

典型关闭延迟时间

32 ns

功率-最大值

25W

包装

管件

商标

STMicroelectronics

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-3 整包

封装/箱体

TO-220FP-3

工厂包装数量

50

晶体管极性

N-Channel

最大工作温度

+ 150 C

最小工作温度

- 55 C

标准包装

50

漏源极电压(Vdss)

500V

电流-连续漏极(Id)(25°C时)

4.4A (Tc)

系列

STP5NK50Z

通道模式

Enhancement

配置

Single

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PDF Datasheet 数据手册内容提取

STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP Ω N-CHANNEL 500V - 1.22 - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH™MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STB5NK50Z 500 V < 1.5 Ω 4.4 A 70 W STB5NK50Z-1 500 V < 1.5 Ω 4.4 A 70 W STD5NK50Z 500 V < 1.5 Ω 4.4 A 70 W STD5NK50Z-1 500 V < 1.5 Ω 4.4 A 70 W STP5K50Z 500 V < 1.5 Ω 4.4 A 70 W 123 3 STP5K50ZFP 500 V < 1.5 Ω 4.4 A 25 W 12 (cid:1) TYPICAL RDS(on) = 1.22 Ω TO-220 I2PAK TO-220FP (cid:1) EXTREMELY HIGH dv/dt CAPABILITY (cid:1) IMPROVED ESD CAPABILITY (cid:1) 100% AVALANCHE RATED (cid:1) GATE CHARGE MINIMIZED 3 1 3 23 (cid:1) VERY LOW INTRINSIC CAPACITANCES DPAK1 D2PAK IPAK 1 (cid:1) VERY GOOD MANUFACTURING REPEATIBILITY Figure 2: Internal Schematic Diagram DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS- FETs including revolutionary MDmesh™ products. APPLICATIONS (cid:1) HIGH CURRENT, HIGH SPEED SWITCHING (cid:1) IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC (cid:1) LIGHTING Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STB5NK50ZT4 B5NK50Z D2PAK TAPE & REEL STB5NK50Z-1 B5NK50Z I2PAK TUBE STD5NK50ZT4 D5NK50Z DPAK TAPE & REEL STD5NK50Z-1 D5NK50Z IPAK TUBE STP5NK50Z P5NK50Z TO-220 TUBE STP5NK50ZFP P5NK50ZFP TO-220FP TUBE Rev. 2 September 2005 1/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Table 3: Absolute Maximum ratings Symbol Parameter Value Unit STP5NK50Z STD5NK50Z STP5NK50ZFP STB5NK50Z/-1 STD5NK50Z-1 VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 500 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 4.4 4.4 (*) 4.4 A ID Drain Current (continuous) at TC = 100°C 2.7 2.7 (*) 2.7 A IDM ((cid:1)) Drain Current (pulsed) 17.6 17.6 (*) 17.6 A PTOT Total Dissipation at TC = 25°C 70 25 70 W Derating Factor 0.56 0.2 0.56 W/°C VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns VISO Insulation Withstand Voltage (DC) - 2500 - V Tj Operating Junction Temperature -55 to 150 °C Tstg Storage Temperature -55 to 150 °C (cid:1) ( ) Pulse width limited by safe operating area (1) ISD ≤4.4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220 TO-220FP DPAK I2PAK/D2PAK Rthj-case Thermal Resistance Junction-case Max 1.78 5 1.78 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive 4.4 A (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy 130 mJ (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Table 6: Gate-Source Zener Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit BVGSO Gate-Source Breakdown Igs=± 1mA (Open Drain) 30 V Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On /Off Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown ID = 1 mA, VGS = 0 500 V Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating, TC = 125°C 50 µA IGSS Gate-body Leakage VGS = ± 20 V ± 10 µA Current (VDS = 0) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on Static Drain-source On VGS = 10 V, ID = 2.2 A 1.22 1.5 Ω Resistance Table 8: Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V , ID = 2.2 A 3.1 S Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 535 pF Coss Output Capacitance 75 pF Crss Reverse Transfer 17 pF Capacitance COSS eq (3). Equivalent Output VGS = 0 V, VDS = 0 to 400 V 45 pF Capacitance td(on) Turn-on Delay Time VDD = 250 V, ID = 2.2 A, 15 ns tr Rise Time RG = 4.7 Ω, VGS = 10 V 10 ns td(off) Turn-off-Delay Time (see Figure 19) 32 ns tf Fall Time 15 ns Qg Total Gate Charge VDD = 400 V, ID = 4.4 A, 20 28 nC Qgs Gate-Source Charge VGS = 10 V 4 nC Qgd Gate-Drain Charge (see Figure 22) 10 nC Table 9: Source Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 4.4 A ISDM (2) Source-drain Current (pulsed) 17.6 A VSD (1) Forward On Voltage ISD = 4.4 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 4.4 A, di/dt = 100 A/µs 310 ns Qrr Reverse Recovery Charge VDD = 30V, Tj = 150°C 1425 nC IRRM Reverse Recovery Current (see Figure 20) 9.2 A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Figure 3: Safe Operating Area For DPAK/IPAK/ Figure 6: Safe Operating Area For TO-220FP D2PAK/I2PAK/TO-220 Figure 4: Thermal Impedance For DPAK/IPAK/ Figure 7: Thermal Impedance For TO-220FP D2PAK/I2PAK/TO-220 Figure 5: Output Characteristics Figure 8: Transfer Characteristics 4/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Figure 9: Transconductance Figure 12: Static Drain-Source On Resistance Figure 10: Gate Charge vs Gate-source Voltage Figure 13: Capacitance Variations Figure 11: Normalized Gate Threshold Voltage Figure 14: Normalized On Resistance vs Tem- vs Temperature perature 5/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Figure 15: Source-Drain Forward Characteris- Figure 17: Normalized BVDSS vs Temperature tics Figure 16: Maximum Avalanche Energy vs Temperature 6/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Figure 18: Unclamped Inductive Load Test Cir- Figure 21: Unclamped Inductive Wafeform cuit Figure 19: Switching Times Test Circuit For Figure 22: Gate Charge Test Circuit Resistive Load Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 F F 1 G H G 2 F 1 2 3 L5 L2 L4 9/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 10/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP TO-251 (IPAK) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 H C A C2 A3 1 A L2 D L B3 B6 B B5 3 E = B2 = 2 G = = = = 1 L1 0068771-E 11/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP TO-262(I2PAK)MECHANICALDATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 12/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY TAPE MECHANICAL DATA 2500 2500 mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 13/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 4º 3 1 14/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP TO-252 (DPAK) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 15/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Table 10: Revision History Date Revision Description of Changes 16-Jun-2004 1 D2PAK Included. New Stylesheet. 06-Sep-2005 2 Inserted Ecopack indication 16/17

STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 17/17

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: S TMicroelectronics: STP5NK50Z STP5NK50ZFP STD5NK50Z-1 STD5NK50ZT4 STB5NK50ZT4 STB5NK50Z-1