STP7NK40Z - STP7NK40ZFP STD7NK40Z - STD7NK40Z-1 W N-CHANNEL 400V-0.85 -5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP7NK40Z 400 V < 1 W 5.4 A 70 W STP7NK40ZFP 400 V < 1 W 5.4 A 25 W STD7NK40Z 400 V < 1 W 5.4 A 70 W STD7NK40Z-1 400 V < 1 W 5.4 A 70 W n TYPICAL RDS(on) = 0.85 W 23 1 EXTREMELY HIGH dv/dt CAPABILITY n TO-220 TO-220FP 100% AVALANCHE TESTED n GATE CHARGE MINIMIZED n VERY LOW INTRINSIC CAPACITANCES n VERY GOOD MANUFACTURING 3 n 3 2 REPEATIBILITY 1 1 IPAK DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- INTERNAL SCHEMATIC DIAGRAM based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING n IDEAL FOR OFF-LINE POWER SUPPLIES, n ADAPTORS AND PFC LIGHTING n ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP7NK40Z P7NK40Z TO-220 TUBE STP7NK40ZFP P7NK40ZFP TO-220FP TUBE STD7NK40ZT4 D7NK40Z DPAK TAPE & REEL STD7NK40Z-1 D7NK40Z IPAK TUBE September 2002 1/13

STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STD7NK40Z STP7NK40Z STP7NK40ZFP STD7NK40Z-1 VDS Drain-source Voltage (VGS = 0) 400 V VDGR Drain-gate Voltage (RGS = 20 kW ) 400 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 5.4 5.4 (*) 5.4 A ID Drain Current (continuous) at TC = 100°C 3.4 3.4 (*) 3.4 A IDM (l) Drain Current (pulsed) 21.6 21.6 (*) 21.6 A PTOT Total Dissipation at TC = 25°C 70 25 70 W Derating Factor 0.56 0.2 0.56 W/°C VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KW) 3000 V dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns VISO Insulation Withstand Voltage (DC) - 2500 - V Tj Operating Junction Temperature -55 to 150 °C Tstg Storage Temperature -55 to 150 °C (l) Pulse width limited by safe operating area (1) ISD £ 5.4A, di/dt £ 200A/µs, VDD £ V(BR)DSS, Tj £ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA DPAK TO-220 TO-220FP IPAK Rthj-case Thermal Resistance Junction-case Max 1.78 5 1.78 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive 5.4 A (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy 130 mJ (starting Tj = 25 °C, ID = IAR, VDD = 50 V) GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BVGSO Gate-Source Breakdown Igs=± 1mA (Open Drain) 30 V Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13

STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source ID =1 mA, VGS = 0 400 V Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage VGS = ± 20V ±10 µA Current (VDS = 0) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA 3 3.75 4.5 V RDS(on) Static Drain-source On VGS = 10V, ID = 2.7 A 0.85 1 W Resistance DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =15 V, ID=2.7 A 3.5 S Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 535 pF Coss Output Capacitance 82 pF Crss Reverse Transfer 18 pF Capacitance Coss eq. (3) Equivalent Output VGS = 0V, VDS = 0V to 400V 53 pF Capacitance SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 200 V, ID = 2.7 A 15 ns tr Rise Time RG=4.7W VGS = 10 V 15 ns (Resistive Load see, Figure 3) Qg Total Gate Charge VDD = 320V, ID = 5.4 A, 19 26 nC Qgs Gate-Source Charge VGS = 10V 4 nC Qgd Gate-Drain Charge 10 nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) Turn-off Delay Time VDD = 200 V, ID = 2.7A 30 ns tf Fall Time RG=4.7W VGS = 10 V 12 ns (Resistive Load see, Figure 3) tr(Voff) Off-voltage Rise Time VDD = 320V, ID = 5.4A, 12 ns tf Fall Time RG=4.7W, VGS = 10V 10 ns tc Cross-over Time (Inductive Load see, Figure 5) 20 ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 5.4 A ISDM (2) Source-drain Current (pulsed) 21.6 A VSD (1) Forward On Voltage ISD = 5.4 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 5.4 A, di/dt = 100A/µs 220 ns Qrr Reverse Recovery Charge VDD = 50V, Tj = 150°C 990 nC IRRM Reverse Recovery Current (see test circuit, Figure 5) 9 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/13

STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1 Safe Operating Area For TO-220/DPAK/IPAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220/DPAK/IPAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 4/13

STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/13

STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1 Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature 6/13

STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/13

STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1 TO-220 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 E A C D 1 D L2 1 F 1 G 2 G H Dia. F 2 L5 F L9 L7 L6 L4 P011C 8/13

STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1 TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 ¯ F F 1 G H G 2 F 1 2 3 L5 L2 L4 9/13

STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1 TO-252 (DPAK) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 10/13

STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1 TO-251 (IPAK) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 H C A C2 A3 1 A L2 D L B3 B6 B B5 3 E = B2 = 2 G = = = = 1 L1 0068771-E 11/13

STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY TAPE MECHANICAL DATA 2500 2500 mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 * on sales type 12/13

STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 13/13

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