STD35NF06L Ω N-channel 60 V, 0.014 , 35 A STripFET™ II Power MOSFET in a DPAK package Datasheet — production data Features Order code V R I DSS DS(on) D STD35NF06LT4 60V <0.017Ω 35A TAB ■ Low threshold drive 3 ■ Gate charge minimized 1 Applications DPAK ■ Switching application Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, Figure 1. Internal schematic diagram which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in (cid:36)(cid:0)(cid:8)(cid:52)(cid:33)(cid:34)(cid:0)(cid:79)(cid:82)(cid:0)(cid:18)(cid:9) advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. (cid:39)(cid:8)(cid:17)(cid:9) (cid:51)(cid:8)(cid:19)(cid:9) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:20)(cid:86)(cid:17) Table 1. Device summary Order code Marking Package Packaging STD35NF06LT4 D35NF06L DPAK Tape and reel April 2012 Doc ID 7662 Rev 5 1/14 This is information on a product in full production. www.st.com 14

Contents STD35NF06L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 Doc ID 7662 Rev 5

STD35NF06L Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 60 V DS V Drain-gate voltage (R = 20 kΩ) 60 V DGR GS V Gate- source voltage ± 16 V GS I Drain current (continuous) at T = 25 °C 35 A D C I Drain current (continuous) at T = 100 °C 24.5 A D C I (1) Drain current (pulsed) 140 A DM P Total dissipation at T = 25 °C 80 W tot C Derating Factor 0.53 W/°C dv/dt(2) Peak diode recovery avalanche energy 5 V/ns E (3) Single pulse avalanche energy 280 mJ AS T Storage temperature stg -55 to 175 °C T Max. operating junction temperature j 1. Pulse width limited by safe operating area. 2. I ≤ 35 A, di/dt ≤ 100 A/µs, V =V( , T ≤ T SD DD BR)DSS j JMAX 3. Starting T = 25 °C, I = 30 A, V =30 V j D DD Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1.88 °C/W Rthj-amb Thermal resistance junction-to ambient max 100 °C/W Maximum lead temperature for soldering T 275 °C J purpose Doc ID 7662 Rev 5 3/14

Electrical characteristics STD35NF06L 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 250 µA, V =0 60 V (BR)DSS breakdown voltage D GS Zero gate voltage V = 60 V 1 µA I DS DSS drain current (V = 0) V = 60 V, T = 125 °C 10 µA GS DS C Gate-body leakage I V = ± 16 V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 1 2.5 V GS(th) DS GS D R Static drain-source VGS = 10 V, ID = 17.5 A 0.014 0.017 Ω DS(on) on-resistance V = 4.5 V, I = 17.5 A 0.016 0.020 Ω GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward g (1) V = 15 V, I = 17.5 A - 28 S fs transconductance DS D Input capacitance C 1700 pF Ciss Output capacitance VDS = 25 V, f = 1 MHz, - 305 pF Coss Reverse transfer VGS = 0 105 pF rss capacitance t Turn-on delay time 20 ns d(on) V = 30 V, I = 27.5 A t Rise time DD D 100 ns r R =4.7 Ω V = 4.5 V - t Turn-off delay time G GS 40 ns d(off) (see Figure13) t Fall time 20 ns f Q Total gate charge V = 48 V, I = 55 A, 25 33 nC g DD D Q Gate-source charge V = 4.5 V, R =4.7 Ω - 5 nC gs GS G Q Gate-drain charge (see Figure14) 10 nC gd 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. 4/14 Doc ID 7662 Rev 5

STD35NF06L Electrical characteristics Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current I 35 A SD Source-drain current - I (1) 140 A SDM (pulsed) V (2) Forward on voltage I = 35 A, V = 0 - 1.5 V SD SD GS I = 35 A, t Reverse recovery time SD 80 ns rr di/dt = 100 A/µs, Q Reverse recovery charge - 200 nC rr V = 30 V, T = 150 °C DD j I Reverse recovery current 5 A RRM (see Figure15) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 7662 Rev 5 5/14

Electrical characteristics STD35NF06L 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on-resistance 6/14 Doc ID 7662 Rev 5

STD35NF06L Electrical characteristics Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage Figure 11. Normalized on-resistance vs. vs. temperature temperature Figure 12. Source-drain diode forward characteristics Doc ID 7662 Rev 5 7/14

Test circuit STD35NF06L 3 Test circuit Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 8/14 Doc ID 7662 Rev 5

STD35NF06L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 7. DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0° 8° Doc ID 7662 Rev 5 9/14

Package mechanical data STD35NF06L Figure 19. DPAK (TO-252) drawing 0068772_H Figure 20. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 a. All dimension are in millimeters 10/14 Doc ID 7662 Rev 5

STD35NF06L Packing mechanical data 5 Packing mechanical data Table 8. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 7662 Rev 5 11/14

Packing mechanical data STD35NF06L Figure 21. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B1 B0 For machine ref. only A0 P1 D1 including draft and radii concentric around B0 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 22. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 12/14 Doc ID 7662 Rev 5

STD35NF06L Revision history 6 Revision history T able 9. Revision history Date Revision Changes 21-Jun-2004 2 Preliminary version 06-Jul-2006 3 New template, no content change 20-Feb-2007 4 Typo mistake on page 1 Added new value in Table4: On/off states (V max). 19-Apr-2012 5 GS(th) Minor text changes. Doc ID 7662 Rev 5 13/14

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