STD30NF06L W N-CHANNEL 60V - 0.022 - 35A DPAK/IPAK STripFET™ POWER MOSFET TYPE VDSS RDS(on) ID STD30NF06L 60 V <0.028W 35 A n TYPICAL RDS(on) = 0.022W n EXCEPTIONAL dv/dt CAPABILITY 3 3 n LOGIC LEVEL GATE DRIVE 2 1 1 ADD SUFFIX “T4” FOR ORDERING IN TAPE & n REEL ADD SUFFIX “-1” FOR ORDERING IN IPAK n IPAK DPAK CHARACTERIZATION ORIENTED FOR n AUTOMOTIVE APPLICATIONS DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature INTERNAL SCHEMATIC DIAGRAM Size™” strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n DC-DC & DC-AC CONVERTERS n AUTOMOTIVE n ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kW ) 60 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 35 A ID Drain Current (continuous) at TC = 100°C 25 A IDM (l) Drain Current (pulsed) 140 A PTOT Total Dissipation at TC = 25°C 70 W Derating Factor 0.46 W/°C dv/dt (1) Peak Diode Recovery voltage slope 25 V/ns Tstg Storage Temperature – 55 to 175 °C Tj Operating Junction Temperature (l) Pulse width limited by safe operating area (1) ISD £ 38A, di/dt £ 400A/µs, VDD £ V(BR)DSS, Tj £ TJMAX. July 2002 1/10

STD30NF06L THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.14 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 °C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive 35 A (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy 150 mJ (starting Tj = 25 °C, ID = IAR, VDD = 50 V) ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source ID = 250 µA, VGS = 0 60 V Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage VGS = ± 20 V ±100 nA Current (VDS = 0) ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.7 2.5 V RDS(on) Static Drain-source On VGS = 5 V, ID = 18 A 0.025 0.03 W Resistance VGS = 10 V, ID = 18 A 0.022 0.028 W DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS > =15 V , ID=15 A 25 S Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1600 pF Coss Output Capacitance 215 pF Crss Reverse Transfer 60 pF Capacitance 2/10

STD30NF06L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 30 V, ID = 18 A 30 ns RG=4.7W VGS = 4.5 V tr Rise Time (see test circuit, Figure 3) 105 ns Qg Total Gate Charge VDD = 48 V, ID = 38 A, 23 31 nC Qgs Gate-Source Charge VGS = 5 V 7 nC Qgd Gate-Drain Charge 10 nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) Turn-off-Delay Time VDD = 30 V, ID = 18 A, 65 ns tf Fall Time RG=4.7W, VGS = 4.5 V 25 ns (see test circuit, Figure 3) SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 35 A ISDM (2) Source-drain Current (pulsed) 140 A VSD (1) Forward On Voltage ISD = 35 A, VGS = 0 1.5 V trr Reverse Recovery Time ISD = 38 A, di/dt = 100 A/µs, 70 ns Qrr Reverse Recovery Charge VDD = 15 V, Tj = 150°C 140 nC IRRM Reverse Recovery Current (see test circuit, Figure 5) 4 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Normalized Thermal Impedence 3/10

STD30NF06L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10

STD30NF06L Normalized Gate Threshold Voltage vs Normalized On Resistance vs Temperature Temperature Normalized Drain-Source Breakdown vs Source-drain Diode Forward Characteristics Temperature 5/10

STD30NF06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10

STD30NF06L TO-251 (IPAK) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 H C A C2 A3 1 A L2 D L 3 6 B B B B5 3 E = B2 = 2 G = = = = 1 L1 0068771-E 7/10

STD30NF06L TO-252 (DPAK) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 8/10

STD30NF06L DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY TAPE MECHANICAL DATA 2500 2500 mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 9/10

STD30NF06L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 10/10

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