IRF540S, SiHF540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) 100 Definition DS RDS(on) () VGS = 10 V 0.077 • Surface Mount • Available in Tape and Reel Q (Max.) (nC) 72 g • Dynamic dV/dt Rating Q (nC) 11 gs • Repetitive Avalanche Rated Q (nC) 32 gd • 175 °C Operating Temperature Configuration Single • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible G D on-resistance in any existing surface mount package. The S S D2PAK (TO-263) is suitable for high current applications N-Channel MOSFET because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF540S-GE3 SiHF540STRL-GE3a SiHF540STRR-GE3a IRF540SPbF IRF540STRLPbFa IRF540STRRPbFa Lead (Pb)-free SiHF540S-E3 SiHF540STL-E3a SiHF540STR-E3a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V ± 20 GS T = 25 °C 28 Continuous Drain Current V at 10 V C I GS T = 100 °C D 20 A C Pulsed Drain Currenta I 110 DM Linear Derating Factor 1.0 W/°C Linear Derating Factor (PCB Mount)e 0.025 Single Pulse Avalanche Energyb EAS 230 mJ Avalanche Currenta IAR 28 A Repetitive Avalanche Energya EAR 15 mJ Maximum Power Dissipation T = 25 °C 150 C P W Maximum Power Dissipation (PCB Mount)e T = 25 °C D 3.7 A Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg °C Soldering Recommendations (Peak Temperature) for 10 s 300d Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 440 μH, Rg = 25 , IAS = 28 A (see fig. 12). c. ISD  28 A, dI/dt  170 A/μs, VDD  VDS, TJ  175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91022 www.vishay.com S11-1046-Rev. D, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF540S, SiHF540S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R - 62 thJA Maximum Junction-to-Ambient R - 40 °C/W (PCB Mount)a thJA Maximum Junction-to-Case (Drain) R - 1.0 thJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS T = 25 °C, unless otherwise noted J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 μA 100 - - V DS GS D VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C Gate-Source Threshold Voltage V V = V , I = 250 μA 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = ± 20 V - - ± 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I μA DSS V = 80 V, V = 0 V, T = 150 °C - - 250 DS GS J Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 17 Ab - - 0.077  Forward Transconductance g V = 50 V, I = 17 Ab 8.7 - - S fs DS D Dynamic Input Capacitance C - 1700 - iss V = 0 V, GS Output Capacitance C V = 25 V, - 560 - pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C - 120 - rss Total Gate Charge Q - - 72 g I = 17 A, V = 80 V, Gate-Source Charge Q V = 10 V D DS - - 11 nC gs GS see fig. 6 and 13b Gate-Drain Charge Q - - 32 gd Turn-On Delay Time t - 11 - d(on) Rise Time t - 44 - r VDD = 50 V, ID = 17 A, ns Turn-Off Delay Time td(off) Rg = 9.1 , RD = 2.9 , see fig. 10b - 53 - Fall Time t - 43 - f Internal Drain Inductance L Between lead, D - 4.5 - D 6 mm (0.25") from nH package and center of G Internal Source Inductance LS die contact - 7.5 - S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I MOSFET symbol D - - 28 S showing the A integral reverse G Pulsed Diode Forward Currenta ISM p - n junction diode S - - 110 Body Diode Voltage V T = 25 °C, I = 28 A, V = 0 Vb - - 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 180 360 ns rr T = 25 °C, I = 17 A, dI/dt = 100 A/μsb J F Body Diode Reverse Recovery Charge Q - 1.3 2.8 μC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. www.vishay.com Document Number: 91022 2 S11-1046-Rev. D, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF540S, SiHF540S Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted V 102 GS 102 Top 15 V 10 V 25 °C 8.0 V I, Drain Current (A)D 101 Bottom76554.....00505 VVVVV 4.5 V I, Drain Current (A)D 101 175 °C 20 µs Pulse Width 20 µs Pulse Width TC = 25 °C VDS = 50 V 10-1 100 101 4 5 6 7 8 9 10 91022_01 VDS, Drain-to-Source Voltage (V) 91022_03 VGS, Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, T = 25 °C Fig. 3 - Typical Transfer Characteristics C e 3.0 102 VGS nc ID = 17 A Top 15 V a V = 10 V 10 V sist 2.5 GS , Drain Current (A)D 101 Bottom 876554......000505 VVVVVV 4.5 V ain-to-Source On Re(Normalized) 112...050 I Dr 20 µs Pulse Width , on) 0.5 TC = 175 °C RDS( 0.0 10-1 100 101 - 60- 40- 20 0 20 40 60 80100120140160180 91022_02 VDS, Drain-to-Source Voltage (V) 91022_04 TJ, Junction Temperature (°C) Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91022 www.vishay.com S11-1046-Rev. D, 30-May-11 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF540S, SiHF540S Vishay Siliconix 3000 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted A) 150 °C 2400 CCrss == CCgd + C nt ( pF) oss ds gd urre 101 25 °C nce ( 1800 Ciss ain C acita 1200 e Dr ap C ers 100 C oss v e 600 R , D C S rss I V = 0 V 0 10-1 GS 100 101 0.4 0.8 1.2 1.6 91022_05 VDS, Drain-to-Source Voltage (V) 91022_07 VSD, Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 103 I = 17 A Operation in this area limited D e (V) 16 VDS = 80 V 5 by RDS(on) ag VDS = 50 V A) 2 Volt V = 20 V nt ( 102 10 µs urce 12 DS Curre 5 100 µs So n 2 o- 8 ai 1 ms ate-t , DrD 10 G 4 I 5 10 ms , S TC = 25 °C VG For test circuit 2 TJ = 175 °C see figure 13 Single Pulse 0 1 0 10 20 30 40 50 60 70 0.12 5 1 2 5 10 2 51022 5 1032 5 104 91022_06 QG, Total Gate Charge (nC) 91022_08 VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com Document Number: 91022 4 S11-1046-Rev. D, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF540S, SiHF540S Vishay Siliconix R D V DS 30 V GS D.U.T. R 25 g + A) -VDD nt ( 20 10 V e Curr 15 PDuultsye f awcitdotrh ≤≤ 01. 1µ %s n ai Dr 10 Fig. 10a - Switching Time Test Circuit , D I 5 V DS 0 90 % 25 50 75 100 125 150 175 91022_09 TC, Case Temperature (°C) 10 % Fig. 9 - Maximum Drain Current vs. Case Temperature V GS t t t t d(on) r d(off) f Fig. 10b - Switching Time Waveforms 10 )C hJ Zt e ( 1 s on D = 0.5 sp PDM Re 0.2 mal 0.1 0.1 t1 er 0.05 t2 h T 0.02 Single Pulse Notes: 0.01 (Thermal Response) 1. Duty Factor, D = t1/t2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 91022_11 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91022 www.vishay.com S11-1046-Rev. D, 30-May-11 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF540S, SiHF540S Vishay Siliconix L VDS VDS Vary t to obtain p t required I p AS V DD Rg D.U.T + V - DD V I DS AS 10 V t 0.01 Ω p I AS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 600 I D J) Top 11 A m 500 20 A y ( Bottom 28 A g er 400 n E e s 300 ul P e gl 200 n Si , S 100 A E V = 25 V 0 DD 25 50 75 100 125 150 175 91022_12c Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. QG 50 kΩ 10 V 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. - DS V G V GS 3 mA Charge I I G D Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com Document Number: 91022 6 S11-1046-Rev. D, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF540S, SiHF540S Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations D.U.T. (cid:129) Low stray inductance (cid:129) Ground plane (cid:129) Low leakage inductance current transformer - + - + - Rg (cid:129) dV/dt controlled by Rg + (cid:129) Driver same type as D.U.T. V - DD (cid:129) ISD controlled by duty factor “D” (cid:129) D.U.T. - device under test Driver gate drive Period D = P.W. P.W. Period V = 10 Va GS D.U.T. l waveform SD Reverse recovery Body diode forward current current dI/dt D.U.T. V waveform DS Diode recovery dV/dt V DD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a. V = 5 V for logic level devices GS Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91022. Document Number: 91022 www.vishay.com S11-1046-Rev. D, 30-May-11 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 4 A A B E c2 H 4 L1 4 Gauge plane 0° to 8° B D 5 Detail A Seating plane H 1 2C 3 C L3 L L4 A1 Detail “A” L2 Rotated 90° CW BB BB scale 8:1 A 2 x b2 2 x b c E 0.010M AM B ± 0.004M B 2 x e Base Plating 5 metal D1 4 b1, b3 (c) c1 5 (b, b2) Lead tip Section B - B and C - C E1 4 Scale: none View A - A MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 - b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 www.vishay.com Revision: 15-Sep-08 1

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: IRF540STRRPBF IRF540STRLPBF IRF540S IRF540STRL IRF540STRR IRF540SPBF SIHF540S-GE3 SIHF540STRL-GE3