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F D M C 8 October 2012 6 0 1 FDMC86012 2 N N-Channel Power Trench® MOSFET -C h 30 V, 88 A, 2.7 mΩ a n Features General Description n e l (cid:132) Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 23 A This device has been designed specifically to improve the P efficiency of DC/DC converters. Using new techniques in o (cid:132) Max rDS(on) = 4.7 mΩ at VGS = 2.5 V, ID = 17.5 A MOSFET construction, the various components of gate charge w (cid:132) High performance technology for extremely low r and capacitance have been optimized to reduce switching e DS(on) r losses. Low gate resistance and very low Miller charge enable T (cid:132) Termination is Lead-free excellent performance with both adaptive and fixed dead time r e (cid:132) 100% UIL Tested gate drive circuits. Very low rDS(on) has been maintained to n provide a sub logic-level device. c (cid:132) RoHS Compliant h Applications ® M (cid:132) 3.3 V input synchronous buck switch O (cid:132) Synchronous rectifier S F E T Pin 1 Pin 1 S S S D S G S D S D D D D D G D Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±12 V GS Drain Current -Continuous T = 25 °C 88 C ID -Continuous TA = 25 °C (Note 1a) 23 A -Pulsed (Note 4) 230 E Single Pulse Avalanche Energy (Note 3) 337 mJ AS Power Dissipation T = 25 °C 54 P C W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 2.3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86012 FDMC86012 Power33 13 ’’ 12 mm 3000 units ©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC86012 Rev. C

F D Electrical Characteristics M T = 25 °C unless otherwise noted J C Symbol Parameter Test Conditions Min Typ Max Units 8 6 0 Off Characteristics 1 2 BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V N ΔBVDSS Breakdown Voltage Temperature I = 250 μA, referenced to 25 °C 43 mV/°C -C ΔT Coefficient D J h I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 μA a DSS DS GS n IGSS Gate to Source Leakage Current VGS = ±12 V, VDS = 0 V ±100 nA n e l On Characteristics P o VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 0.8 1.0 1.5 V w ΔV Gate to Source Threshold Voltage e ΔTGJS(th) Temperature Coefficient ID = 250 μA, referenced to 25 °C -4 mV/°C r T V = 4.5 V, I = 23 A 2.2 2.7 r GS D e r Static Drain to Source On Resistance V = 2.5 V, I = 17.5 A 3.4 4.7 mΩ n DS(on) GS D c VGS = 4.5 V, ID = 23 A, TJ = 125 °C 3.5 4.3 h ® g Forward Transconductance V = 5 V, I = 23 A 144 S FS DD D M Dynamic Characteristics O S Ciss Input Capacitance 3625 5075 pF F C Output Capacitance VDS = 15 V, VGS = 0 V, 1230 1725 pF E oss f = 1 MHz T C Reverse Transfer Capacitance 185 260 pF rss R Gate Resistance 0.1 0.9 3.0 Ω g Switching Characteristics t Turn-On Delay Time 20 32 ns d(on) tr Rise Time VDD = 15 V, ID = 23 A, 11 20 ns td(off) Turn-Off Delay Time VGS = 4.5 V, RGEN = 6 Ω 43 69 ns t Fall Time 8 16 ns f Q Total Gate Charge V = 0 V to 4.5 V 27 38 nC g(TOT) GS Qg(TOT) Total Gate Charge VGS = 0 V to 2.5 V VDD = 15 V, 16 23 nC Qgs Gate to Source Charge ID = 23 A 5.8 nC Q Gate to Drain “Miller” Charge 5.4 nC gd Drain-Source Diode Characteristics V = 0 V, I = 23 A (Note 2) 0.8 1.3 V V Source to Drain Diode Forward Voltage GS S SD V = 0 V, I = 1.9 A (Note 2) 0.7 1.2 V GS S t Reverse Recovery Time 40 64 ns rr I = 23 A, di/dt = 100 A/μs Q Reverse Recovery Charge F 23 37 nC rr Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a b.125 °C/W when mounted on a 1 in2 pad of 2 oz copper minimum pad of 2 oz copper GDDSS FSFS GDDSS FSFS 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 337 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 15 A, VDD = 30 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 33 A. 4. Pulsed Id limited by junction temperature,td<=100uS, please refer to SOA curve for more details. ©2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMC86012 Rev. C

F D M Typical Characteristics TJ = 25 °C unless otherwise noted C 8 6 230 6 0 VGS = 10 V NCE PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs 12 A 5 184 T N NT (A) VGS = 4.5 V VGS = 2.5 V DRESIS 4 VGS = 2 V -Ch , DRAIN CURRED1349862 VGS = 3 V VGS = 2 V NORMALIZEN TO SOURCE ON- 123 VGS = 3V VGS = 2.5 V VGS = 4.5 V annelPow I PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A μXs RAI VGS = 10 V er 0 D 0 T 0 1 2 3 4 5 0 46 92 138 184 230 r VDS, DRAIN TO SO URCE VOLTAGE (V) ID, DRAIN C URRENT (A) en c Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance h ® vs Drain Current and Gate Voltage M O 1.8 15 ALIZEDE ON-RESISTANCE111...246 IVDG =S 2=3 4 A.5 V DRAIN TO ()mESISTANCE Ω129 PDUULTSYE C DYUCRLEA T=I OI0D.N 5= % =2 38M 0AA μXs SFET NORM N TO SOURC01..80 r,DS(on)OURCE ON-R 36 TJ = 125 oC RAI S TJ = 25 oC D0.6 0 -75 -50 -25 0 25 50 75 100 125 150 1.5 2.0 2.5 3.0 3.5 4.0 4.5 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SO URCE VOLTAGE (V) Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 230 500 PULSE DURATION = 80 μs A) VGS = 0 V DUTY CYCLE = 0.5% MAX T ( 100 184 N E T (A) VDS = 5 V URR 10 RREN138 AIN C 1 TJ = 150 oC CU TJ = 150 oC DR RAIN 92 TJ = 25 oC ERSE 0.1 TJ = 25 oC D V I, D 46 TJ = -55 oC I, RES0.01 TJ = -55 oC 0 0.001 0 1 2 3 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDMC86012 Rev. C

F D M Typical Characteristics T = 25 °C unless otherwise noted J C 8 4.5 10000 6 0 E (V) ID = 23 A VDD = 10 V 12 AG3.6 Ciss N OLT VDD = 15 V pF)1000 -C SOURCE V12..87 VDD = 20 V CITANCE ( Coss hanne E TO CAPA 100 Crss lP T0.9 o V, GAGS0.0 10 fV =G S1 =M 0H Vz wer 0 6 12 18 24 30 0.1 1 10 30 T r Qg, GATE CH ARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) e n c Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain h ® to Source Voltage M 100 120 O RθJC = 2.3 oC/W SF NT (A) T (A) 90 ET E N R E E CUR 10 TJ = 25 oC CURR 60 VGS = 4.5V VALANCH TJ = 125 oC TJ = 100 oC , IDRAIN D 30 Limited by Package VGS = 2.5 V A , S A I 1 0 0.001 0.01 0.1 1 10 100 500 25 50 75 100 125 150 tAV, TIME IN AVA LANCHE (ms) TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Case Temperature 300 2000 100 W)1000 SINGLE PULSE NT (A) 10 100 us POWER ( 100 TRAθJ =A 2=5 1 o2C5 oC/W N CURRE 1 TLHIMISIT AERDE BAY I Sr 110 m mss ANSIENT 10 AI DS(on) 100 ms R DR SINGLE PULSE K T I, D00.0.11 TRTJAθ J ==A M2=5 A1 oX2C5 R oACT/WED CMUERAVSEU RBEEDN TD ATOTA 11D 0Cs s , PPEA()PK 0.11 0.01 0.1 1 10 100200 10-4 10-3 10-2 10-1 1 10 100 1000 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WI DTH (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation ©2012 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDMC86012 Rev. C

F D M Typical Characteristics T = 25 °C unless otherwise noted J C 8 2 6 1 0 DUTY CYCLE-DESCENDING ORDER 1 2 D = 0.5 L 0.2 N MA A 0.1 0.1 -C NORMALIZED THER ZIMPEDANCE,Jθ 00..0011 000...000521 SRIθNJAG =L E1 2P5U oLCS/EW NDPEOUATTYKE S FT:AJ C= TPODRM: xD Z =Pθ JDtA1M /xt2 RθJAt1 +t T2A hannelPow e r T 0.001 10-4 10-3 10-2 10-1 1 10 100 1000 re n t, RECTANGULAR PULSE DURATION (sec) c Figure 13. Junction-to-Ambient Transient Thermal Response Curve h ® M O S F E T ©2012 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDMC86012 Rev. C

F D Dimensional Outline and Pad Layout M C   8 6 0 1 2 N - C h a n n e l P o w e r T r e n c h ® M O S F E T ©2012 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDMC86012 Rev. C

F D M C 8 6 0 1 2 TRADEMARKS N The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not - intended to be an exhaustive list of all such trademarks. C 2Cool™ F-PFS™ PowerTrench® The Power Franchise® ha AccuPower™ FRFET® PowerXS™ ® n AX-CAP™* Global Power ResourceSM Programmable Active Droop™ n BitSiC® Green Bridge™ QFET® e Build it Now™ Green FPS™ QS™ TTiinnyyBBouocks™t™ lP CorePLUS™ Green FPS™ e-Series™ Quiet Series™ TinyCalc™ o CorePOWER™ Gmax™ RapidConfigure™ TinyLogic® w CROSSVOLT™ GTO™ ™ CTL™ IntelliMAX™ TINYOPTO™ e TinyPower™ r Current Transfer Logic™ ISOPLANAR™ Saving our world, 1mW/W/kW at a time™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyPWM™ T TinyWire™ r DEcuoaSl CPoAoRl™K® aMnedg aBBeuttcekr™™ SSmMaArRtMTa SxT™ART™ TranSiC® en EEfSfiBceCn™tMax™ MMiIcCrRoFOECTO™UPLER™ SSoPlMut®ions for Your Success™ TTRriFUaEuClt UDReRteEcNt™T®* ch μSerDes™ ® MicroPak™ STEALTH™ ® MicroPak2™ SuperFET® M FFFFaaAAiiCCrrccTThh® iiQllddu® Sieet mSiecroiensd™uctor® MMMmioWolltteiiSoorDannvM-rSievaPrex™M™™™ SSSSuuuuppppeeererrrSSSMOOOOTTTS™™™®---368 UUUlHntriCFa E®FTR™FET™ OSFE FAST® OptoHiT™ SyncFET™ VCX™ T FastvCore™ OPTOLOGIC® Sync-Lock™ VisualMax™ FETBench™ OPTOPLANAR® ®* VoltagePlus™ FlashWriter® * XS™ ® FPS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FDMC86012 Rev. C

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