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F C P 1 9 December 2014 0 N 6 FCP190N60E / FCPF190N60E 0 E N-Channel SuperFET® II Easy-Drive MOSFET / F C P 600 V, 20.6 A, 190 mΩ F 1 9 Features Description 0 N • 650 V @ T = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new 6 J 0 • Typ. RDS(on) = 160 mΩ high voltage super-junction (SJ) MOSFET family that is utilizing E charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Q = 63 nC) — g and lower gate charge performance. This technology is tailored • Low Effective Output Capacitance (Typ. C = 178 pF) oss(eff.) to minimize conduction loss, provide superior switching perfor- N • 100% Avalanche Tested mance, dv/dt rate and higher avalanche energy. Consequently, -C • An Integrated Gate Resistor SuperFET II MOSFET easy-drive series offers slightly slower h • RoHS Compliant rise and fall times compared to the SuperFET II MOSFET an series. Noted by the "E" part number suffix, this family helps n Applications manage EMI issues and allows for easier design implementa- e l tion. For faster switching in applications where switching losses S • LCD / LED / PDP TV Lighting must be at an absolute minimum, please consider the Super- u • Solar Inverter FET II MOSFET series. p e • AC-DC Power Supply r F E D T ® I I E a s y G - G D D G S TO-220 DS TO-220F ri v e S M MOSFET Maximum Ratings TC = 25oC unless otherwise noted. O S Symbol Parameter FCP190N60E FCPF190N60E Unit F V Drain to Source Voltage 600 V E DSS T - DC ±20 V V Gate to Source Voltage GSS - AC (f > 1 Hz) ±30 V - Continuous (T = 25oC) 20.6 20.6* I Drain Current C A D - Continuous (T = 100oC) 13.1 13.1* C I Drain Current - Pulsed (Note 1) 61.8 61.8* A DM E Single Pulsed Avalanche Energy (Note 2) 400 mJ AS I Avalanche Current (Note 1) 4.0 A AR E Repetitive Avalanche Energy (Note 1) 2.1 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 (T = 25oC) 208 39 W P Power Dissipation C D - Derate Above 25oC 1.67 0.31 W/oC T , T Operating and Storage Temperature Range -55 to +150 oC J STG T Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC L *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP190N60E FCPF190N60E Unit R Thermal Resistance, Junction to Case, Max. 0.6 3.2 θJC oC/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 θJA ©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCP190N60E / FCPF190N60E Rev. C11

F C Package Marking and Ordering Information P 1 9 Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 0 FCP190N60E FCP190N60E TO-220 Tube N/A N/A 50 units N 6 FCPF190N60E FCPF190N60E TO-220F Tube N/A N/A 50 units 0 E Electrical Characteristics TC = 25oC unless otherwise noted. / F C Symbol Parameter Test Conditions Min. Typ. Max. Unit P F Off Characteristics 1 9 V = 0 V, I = 10 mA, T = 25°C 600 - - 0 BV Drain to Source Breakdown Voltage GS D J V N DSS VGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - 6 ΔBV Breakdown Voltage Temperature 0 DSS I = 10 mA, Referenced to 25oC - 0.67 - V/oC E / ΔTJ Coefficient D — Drain to Source Avalanche Breakdown BVDS Voltage VGS = 0 V, ID = 20 A - 700 - V N I Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V - - 1 μA -C DSS V = 480 V, T = 125oC - 2.8 - h DS C a I Gate to Body Leakage Current V = ±20 V, V = 0 V - - ±100 nA n GSS GS DS n e On Characteristics l S VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.5 - 3.5 V u RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 10 A - 0.16 0.19 Ω pe g Forward Transconductance V = 20 V, I = 10 A - 20 - S r FS DS D F E Dynamic Characteristics T ® CCiss IOnuptuptu Ct aCpaapcaitcaitnacnece VDS = 25 V, VGS = 0 V, -- 12739855 23319765 ppFF II E oss f = 1 MHz a Crss Reverse Transfer Capacitance - 110 165 pF s C Output Capacitance V = 380 V, V = 0 V, f = 1 MHz - 42 - pF y oss DS GS - D C Effective Output Capacitance V = 0 V to 480 V, V = 0 V - 178 - pF oss(eff.) DS GS r Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 10 A, - 63 82 nC ive Qgs Gate to Source Gate Charge VGS = 10 V - 10 - nC M Q Gate to Drain “Miller” Charge (Note 4) - 24 - nC gd O ESR Equivalent Series Resistance f = 1 MHz - 5 - Ω S F Switching Characteristics E T t Turn-On Delay Time - 23 56 ns d(on) tr Turn-On Rise Time VDD = 380 V, ID = 10 A, - 14 38 ns V = 10 V, R = 4.7 Ω t Turn-Off Delay Time GS G - 101 212 ns d(off) tf Turn-Off Fall Time (Note 4) - 15 40 ns Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 20.2 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 60.6 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 10 A - - 1.2 V SD GS SD trr Reverse Recovery Time VGS = 0 V, ISD = 10 A, - 308 - ns Qrr Reverse Recovery Charge dIF/dt = 100 A/μs - 4.8 - μC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. IAS = 4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FCP190N60E / FCPF190N60E Rev. C11

F C Typical Performance Characteristics P 1 9 0 N Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 0 50 100 E VGS = 15.0V *Notes: / 10.0V 1. VDS = 20V F 8.0V 2. 250μs Pulse Test C 7.0V P I, Drain Current [A]D101 6554....0505VVVV I, Drain Current [A]D10 150oC-55oC25oC F190N60E — *Notes: N 1. 250μs Pulse Test - C 2. TC = 25oC h 0.3 1 a 0.1 1 10 2 3 4 5 6 7 8 n VDS, Drain to Source Voltage[V] VGS, Gate to Source Voltage[V] n e l Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage S Drain Current and Gate Voltage Variation vs. Source Current u p and Temperature e r 0.4 100 F E T ® nce A] II R [],ΩDS(ON)n to Source On-Resista00..23 VGS = 1V0GVS = 20V Reverse Drain Current [ 10 150oC 25oC Easy-Drive MO Drai I, S *1N. oVtes := 0V S 0.1 *Note: TC = 25oC 1 2. 25G0Sμs Pulse Test FE 0 10 20 30 40 50 60 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 T ID, Drain Current [A] VSD, Body Diode Forward Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10000 10 Ciss V] VDS = 120V 1000 e [ 8 VDS = 300V ag VDS = 480V F] olt ces [p 100 Coss urce V 6 n o a S Capacit 10 * N 12o.. tfVe =G: S1 M= H0Vz Crss Gate to 4 , S 2 Ciss = Cgs + Cgd (Cds = shorted) G V Coss = Cds + Cgd 1 Crss = Cgd *Note: ID = 10A 0.5 0 0.1 1 10 100 600 0 15 30 45 60 75 VDS, Drain to Source Voltage [V] Qg, Total Gate Charge [nC] ©2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FCP190N60E / FCPF190N60E Rev. C11

F C Typical Performance Characteristics P (Continued) 1 9 0 N Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation 6 vs. Temperature vs. Temperature 0 E 1.20 3.0 / e F g C olta 1.15 nce 2.5 P V a F malized] akdown 11..0150 malized] n-Resist 2.0 190N BV, [NorDSSDrain to Source Bre 001...990050 * N 1o. tVeGs:S = 0V R, [NorDS(on)Drain to Source O 011...505 * N 1o. tVeGs:S = 10V 60E — N-Ch 2. ID = 10mA 2. ID = 10A a 0.85 0.0 n -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 n TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] el S Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area u p for FCP190N60E for FCPF190N60E e r F 100 100 E 10μs T 10μs ® A] 10 1ms100μs A] 10 100μs II E ent [ 10ms ent [ 1ms as I, Drain CurrD 1 Oisp Leirmatitioedn biny TRh DisS (Aonre)a DC I, Drain CurrD 1 Oisp Leirmatitioedn biny TRh DisS (Aonre)a DC10ms y-Drive M 0.1 *Notes: 0.1 *Notes: 1. TC = 25oC 1. TC = 25oC OS 2. TJ = 150oC 2. TJ = 150oC F 3. Single Pulse 3. Single Pulse E 0.01 0.01 T 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain to Source Voltage [V] VDS, Drain to Source Voltage [V] Figure 11. Maximum Drain Current Figure 12. Eoss vs. Drain to Source Voltage vs. Case Temperature 25 10 20 8 A] Current [ 15 , [J]μSS 6 ain 10 EO 4 Dr , D I 5 2 0 0 25 50 75 100 125 150 TC, Case Temperature [oC] 0 10V0 Dr2a0i0ntoS3o0u0rceV4o0lt0age[V50]0 600 ©2011 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FCP190N60E / FCPF190N60E Rev. C11

F C Typical Performance Characteristics P (Continued) 1 9 0 N Figure 13. Transient Thermal Response Curve for FCP190N60E 6 0 E 1 / W] F ose [C/Z]JCθ 0.5 CPF hermal Responal Response [ 0.1 000..0.125 PDM t1t2 190N60E Tm *Notes: Z(t), JCθTher 00S..i00n21gle pulse 12.. ZDθuJtCy( tF) a=c 0to.6r,o CD/=W t 1M/t2ax. — N 3. TJM - TC = PDM * ZθJC(t) - 0.01 C 10-5 10-4 10-3 10-2 10-1 1 h Rt1e, cRteacntganuglaurl aPr uPlusles eD Duuraratitoionn [[sseecc]] an n e l Figure 14. Transient Thermal Response Curve for FCPF190N60E S u p e 5 W] rF oonse [C/e Z][JCθ 1 00..25 ETII® hermal Respal Respons 0.1 000..00.152 PDM t1t2 Easy-D (t), ThermC 0.01 * N 1o. tZeθsJ:C(t) = 3.2oC/W Max. riv Z TJθ Single pulse 32.. TDJuMty - FTaCc =to Pr,D DM =* tZ1θ/tJ2C(t) e M 0.01 O 10-5 10-4 10-3 10-2 10-1 1 10 100 S tR1,e Rcteacntagnuglualra Pr Puulslsee D Duurraattiioonn [[sseecc]] F E T ©2011 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FCP190N60E / FCPF190N60E Rev. C11

F C P 1 9 0 N 6 0 E / F C P F 1 9 0 N 6 0 E — N IG = const. -C h a n n e Figure 15. Gate Charge Test Circuit & Waveform l S u p e r F E T VVDDSS RRLL VVDDSS 9900%% II ® E VVGGSS VVDDDD as RRGG y - D 1100%% r VV i V1100GVVS DDUUTT GGSS ve tt tt tt M dd((oonn)) rr dd((ooffff)) tt ff O tt tt oonn ooffff S Figure 16. Resistive Switching Test Circuit & Waveforms F E T V GS Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FCP190N60E / FCPF190N60E Rev. C11

F C P 1 9 0 N 6 0 E / DDUUTT ++ F C P F VVDDSS 1 9 0 __ N 6 0 E II — SSDD LLL N - C h DDrriivveerr a n RR n GG SSaammee TTyyppee e aass DDUUTT VVDDDD l S u p VVGGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR e GG r F ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD E T ® I I E a s y VVGGSS DDD ===------GGGGGG------aaaaaa------tttttt---eeeeee------ PPPPPP------uuu---uuu---llllll---ssssss---eeeeee------ ---WWWPPP------eee---iii---dddrrr---iiitttooo---hhh---ddd--- 1100VV -Dri (( DDrriivveerr )) v e M O S II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM F II E SSDD T (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FCP190N60E / FCPF190N60E Rev. C11

SUPPLIER"B"PACKAGE SHAPE (cid:145)(cid:23)(cid:17)(cid:19)(cid:19) 3.50 10.67 SUPPLIER"A"PACKAGE 9.65 E SHAPE 3.40 2.50 16.30 IFPRESENT,SEENOTE"D" 13.90 E 16.51 9.40 15.42 8.13 E 1 2 3 2.46 4.10 C 2.70 14.04 2.13 12.70 2.06 FRONTVIEWS 4.70 1.62 1.62 4.00 1.42H 2.67 1.10 2.40 "A1" 8.65 1.00 SEENOTE"F" 7.59 0.55 (cid:24)(cid:131) (cid:24)(cid:131) OPTIONAL 6.69 (cid:22)(cid:131) (cid:22)(cid:131) 6.06 CHAMFER E 14.30 11.50 NOTE"I" BOTTOMVIEW NOTES: A)REFERENCEJEDEC,TO-220,VARIATIONAB B)ALLDIMENSIONSAREINMILLIMETERS. C)DIMENSIONSCOMMONTOALLPACKAGE SUPPLIERSEXCEPTWHERENOTED. 3 2 1 D)LOCATIONOFMOLDEDFEATUREMAYVARY (LOWERLEFTCORNER,LOWERCENTER ANDCENTEROFTHEPACKAGE) EDOESNOTCOMPLYJEDECSTANDARDVALUE. F)"A1"DIMENSIONSASBELOW: SINGLEGAUGE=0.51-0.61 DUALGAUGE=1.10-1.45 G)DRAWINGFILENAME:TO220B03REV9 HPRESENCEISSUPPLIERDEPENDENT I)SUPPLIERDEPENDENTMOLDLOCKINGHOLES INHEATSINK. 0.60 0.36 2.85 BACKVIEW 2.10 SIDEVIEW

10.36 2.66 A B B 9.96 2.42 3.28 3.40 7.00 3.08 0.70 3.20 SEE NOTE "F" SEE NOTE "F" 6.88 6.48 1 X 45° 16.07 B 15.67 16.00 15.60 (3.23) B 3 1 1.47 2.96 2.14 1.24 2.56 0.90 10.05 0.70 9.45 0.50 M A 30° 0.45 0.60 0.25 B 0.45 2.54 2.54 4.90 B 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. OPTION 1 - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5

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