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  • 型号: EMT2T2R
  • 制造商: ROHM Semiconductor
  • 库位|库存: xxxx|xxxx
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EMT2T2R产品简介:

ICGOO电子元器件商城为您提供EMT2T2R由ROHM Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 EMT2T2R价格参考。ROHM SemiconductorEMT2T2R封装/规格:晶体管 - 双极 (BJT) - 阵列, Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 140MHz 150mW Surface Mount EMT6。您可以下载EMT2T2R参考资料、Datasheet数据手册功能说明书,资料中有EMT2T2R 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS DUAL PNP 50V 150MA 6EMT两极晶体管 - BJT DUAL PNP 50V 150MA

产品分类

晶体管(BJT) - 阵列分离式半导体

品牌

ROHM Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,ROHM Semiconductor EMT2T2R-

数据手册

点击此处下载产品Datasheet

产品型号

EMT2T2R

不同 Ib、Ic时的 Vce饱和值(最大值)

500mV @ 5mA,50mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

120 @ 1mA,6V

产品目录绘图

产品目录页面

点击此处下载产品Datasheet

产品种类

两极晶体管 - BJT

供应商器件封装

EMT6

其它名称

EMT2T2RCT

功率-最大值

150mW

包装

剪切带 (CT)

发射极-基极电压VEBO

6 V

商标

ROHM Semiconductor

增益带宽产品fT

140 MHz

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

SOT-563,SOT-666

封装/箱体

EMT

工厂包装数量

8000

晶体管极性

PNP

晶体管类型

2 PNP(双)

最大功率耗散

150 mW

最大工作温度

+ 150 C

最大直流电集电极电流

0.15 A

最小工作温度

- 55 C

标准包装

1

电压-集射极击穿(最大值)

50V

电流-集电极(Ic)(最大值)

150mA

电流-集电极截止(最大值)

-

直流电流增益hFE最大值

120 at 1 mA at 6 V

直流集电极/BaseGainhfeMin

120

配置

Dual

集电极—发射极最大电压VCEO

50 V

集电极—基极电压VCBO

60 V

频率-跃迁

140MHz

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PDF Datasheet 数据手册内容提取

EMT2 / UMT2N / IMT2A General purpose transistor (dual transistors) Datasheet llOutline Parameter Tr1 and Tr2 EMT6 UMT6 V -50V CEO I -150mA C           EMT2 UMT2N SOT-563 SOT-363 SMT6   llFeatures   1) Two 2SA1037AK chips in a EMT, UMT or    SMT package.       2) Mounting possible with EMT3, UMT3 or SMT3 IMT2A     automatic mounting machines. SOT-457   3) Transistor elements are independent,                       llInner circuit   eliminating interference. 4) Mounting cost and area can be cut in half. EMT2 / UMT2N IMT2A llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications             Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) EMT2 EMT6 1616 T2R 180 8 8000 T2 UMT2N UMT6 2021 TR 180 8 3000 T2 IMT2A SMT6 2928 T108 180 8 3000 T2                                                                                                       www.rohm.com 1/8 20150527 - Rev.004 © 2015 ROHM Co., Ltd. All rights reserved.

EMT2 / UMT2N / IMT2A Datasheet llAbsolute maximum ratings (T = 25°C) a <For Tr1 and Tr2 in common> Parameter Symbol Values Unit Collector-base voltage V -60 V CBO Collector-emitter voltage V -50 V CEO Emitter-base voltage V -6 V EBO Collector current I -150 mA C EMT2/ UMT2N P *1 *2 150 mW/Total D Power dissipation IMT2A P *1 *3 300 mW/Total D Junction temperature T 150 ℃ j Range of storage temperature T -55 to +150 ℃ stg llElectrical characteristics (T = 25°C) a <For Tr1 and Tr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = -50μA -60 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V voltage CEO C Emitter-base breakdown voltage BV I = -50μA -6 - - V EBO E Collector cut-off current I V = -60V - - -100 nA CBO CB Emitter cut-off current I V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - - -500 mV CE(sat) C B DC current gain h V = -6V, I = -1mA 120 - 560 - FE CE C V = -12V, I = 2mA, CE E Transition frequency f - 140 - MHz T f = 100MHz V = -12V, I = 0A, Output capacitance C CB E - 4.0 5.0 pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded.                                                                                      www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/8 20150527 - Rev.004

EMT2 / UMT2N / IMT2A       Datasheet llElectrical characteristic curves (T = 25°C) a <For Tr1 and Tr2 in common> Fig.1 Ground Emitter Propagation Fig.2 Grounded Emitter Output     Characteristics     Characteristics Fig.3 DC Current Gain vs. Collector Fig.4 DC Current Gain vs. Collector     Current (I)     Current (lI)                                                                                             www.rohm.com 3/8 20150527 - Rev.004 © 2015 ROHM Co., Ltd. All rights reserved.

EMT2 / UMT2N / IMT2A       Datasheet llElectrical characteristic curves (T = 25°C) a <For Tr1 and Tr2 in common> Fig.5 Collector-Emitter Saturation Voltage Fig.6 Collector-Emitter Saturation Voltage     vs. Collector Current(l)     vs. Collector Current(ll) Fig.7 Base-Emitter Saturation Voltage Fig.8 Gain Bandwith Product vs.     vs. Collector Current (I)      Emitter Current                                                                                             www.rohm.com 4/8 20150527 - Rev.004 © 2015 ROHM Co., Ltd. All rights reserved.

EMT2 / UMT2N / IMT2A       Datasheet llElectrical characteristic curves (T =25°C) a <For Tr1 and Tr2 in common> Fig.9 Collector Output Capacitance vs. Fig.10 Safe Operating Area     Collector-Base Voltage      Emitter Input Capacitance vs.      Emitter-Base Voltage Fig.11 Safe Operating Area Fig.12 Safe Operating Area                                                                                             www.rohm.com 5/8 20150527 - Rev.004 © 2015 ROHM Co., Ltd. All rights reserved.

EMT2 / UMT2N / IMT2A       Datasheet llDimensions                                                                                             www.rohm.com 6/8 20150527 - Rev.004 © 2015 ROHM Co., Ltd. All rights reserved.

EMT2 / UMT2N / IMT2A       Datasheet llDimensions                                                                                             www.rohm.com 7/8 20150527 - Rev.004 © 2015 ROHM Co., Ltd. All rights reserved.

EMT2 / UMT2N / IMT2A       Datasheet llDimensions                                                                                             www.rohm.com 8/8 20150527 - Rev.004 © 2015 ROHM Co., Ltd. All rights reserved.

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