ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 阵列 > EMT2T2R
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EMT2T2R产品简介:
ICGOO电子元器件商城为您提供EMT2T2R由ROHM Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 EMT2T2R价格参考。ROHM SemiconductorEMT2T2R封装/规格:晶体管 - 双极 (BJT) - 阵列, Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 140MHz 150mW Surface Mount EMT6。您可以下载EMT2T2R参考资料、Datasheet数据手册功能说明书,资料中有EMT2T2R 详细功能的应用电路图电压和使用方法及教程。
EMT2T2R是罗姆半导体(Rohm Semiconductor)生产的一款双极结型晶体管(BJT)阵列器件,常用于需要多个晶体管集成的电路设计中。该器件内含多个晶体管单元,通常用于需要高效、紧凑设计的电子设备中。 其主要应用场景包括: 1. 放大电路:适用于音频放大器、信号放大器等,作为前置放大或驱动级使用,提供良好的增益和稳定性。 2. 开关电路:广泛应用于数字电路、逻辑电路和电源管理电路中,作为高速开关元件,控制负载的通断。 3. 驱动电路:用于驱动继电器、LED、小型电机等负载,尤其适合需要多路驱动的场合。 4. 工业控制设备:如PLC、传感器模块、工业自动化设备中,实现信号处理和控制功能。 5. 消费类电子产品:如家电控制板、智能玩具、小型电子设备中,实现多路信号控制和处理。 该器件具有封装小、功耗低、可靠性高等优点,适合高密度PCB布局,广泛应用于中低功率电子系统中。
| 参数 | 数值 |
| 产品目录 | |
| 描述 | TRANS DUAL PNP 50V 150MA 6EMT两极晶体管 - BJT DUAL PNP 50V 150MA |
| 产品分类 | 晶体管(BJT) - 阵列分离式半导体 |
| 品牌 | ROHM Semiconductor |
| 产品手册 | |
| 产品图片 |
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| rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
| 产品系列 | 晶体管,两极晶体管 - BJT,ROHM Semiconductor EMT2T2R- |
| 数据手册 | |
| 产品型号 | EMT2T2R |
| 不同 Ib、Ic时的 Vce饱和值(最大值) | 500mV @ 5mA,50mA |
| 不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 120 @ 1mA,6V |
| 产品目录绘图 |
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| 产品目录页面 | |
| 产品种类 | 两极晶体管 - BJT |
| 供应商器件封装 | EMT6 |
| 其它名称 | EMT2T2RCT |
| 功率-最大值 | 150mW |
| 包装 | 剪切带 (CT) |
| 发射极-基极电压VEBO | 6 V |
| 商标 | ROHM Semiconductor |
| 增益带宽产品fT | 140 MHz |
| 安装类型 | 表面贴装 |
| 安装风格 | SMD/SMT |
| 封装 | Reel |
| 封装/外壳 | SOT-563,SOT-666 |
| 封装/箱体 | EMT |
| 工厂包装数量 | 8000 |
| 晶体管极性 | PNP |
| 晶体管类型 | 2 PNP(双) |
| 最大功率耗散 | 150 mW |
| 最大工作温度 | + 150 C |
| 最大直流电集电极电流 | 0.15 A |
| 最小工作温度 | - 55 C |
| 标准包装 | 1 |
| 电压-集射极击穿(最大值) | 50V |
| 电流-集电极(Ic)(最大值) | 150mA |
| 电流-集电极截止(最大值) | - |
| 直流电流增益hFE最大值 | 120 at 1 mA at 6 V |
| 直流集电极/BaseGainhfeMin | 120 |
| 配置 | Dual |
| 集电极—发射极最大电压VCEO | 50 V |
| 集电极—基极电压VCBO | 60 V |
| 频率-跃迁 | 140MHz |
EMT2 / UMT2N / IMT2A General purpose transistor (dual transistors) Datasheet llOutline Parameter Tr1 and Tr2 EMT6 UMT6 V -50V CEO I -150mA C EMT2 UMT2N SOT-563 SOT-363 SMT6 llFeatures 1) Two 2SA1037AK chips in a EMT, UMT or SMT package. 2) Mounting possible with EMT3, UMT3 or SMT3 IMT2A automatic mounting machines. SOT-457 3) Transistor elements are independent, llInner circuit eliminating interference. 4) Mounting cost and area can be cut in half. EMT2 / UMT2N IMT2A llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) EMT2 EMT6 1616 T2R 180 8 8000 T2 UMT2N UMT6 2021 TR 180 8 3000 T2 IMT2A SMT6 2928 T108 180 8 3000 T2 www.rohm.com 1/8 20150527 - Rev.004 © 2015 ROHM Co., Ltd. All rights reserved.
EMT2 / UMT2N / IMT2A Datasheet llAbsolute maximum ratings (T = 25°C) a <For Tr1 and Tr2 in common> Parameter Symbol Values Unit Collector-base voltage V -60 V CBO Collector-emitter voltage V -50 V CEO Emitter-base voltage V -6 V EBO Collector current I -150 mA C EMT2/ UMT2N P *1 *2 150 mW/Total D Power dissipation IMT2A P *1 *3 300 mW/Total D Junction temperature T 150 ℃ j Range of storage temperature T -55 to +150 ℃ stg llElectrical characteristics (T = 25°C) a <For Tr1 and Tr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = -50μA -60 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V voltage CEO C Emitter-base breakdown voltage BV I = -50μA -6 - - V EBO E Collector cut-off current I V = -60V - - -100 nA CBO CB Emitter cut-off current I V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - - -500 mV CE(sat) C B DC current gain h V = -6V, I = -1mA 120 - 560 - FE CE C V = -12V, I = 2mA, CE E Transition frequency f - 140 - MHz T f = 100MHz V = -12V, I = 0A, Output capacitance C CB E - 4.0 5.0 pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/8 20150527 - Rev.004
EMT2 / UMT2N / IMT2A Datasheet llElectrical characteristic curves (T = 25°C) a <For Tr1 and Tr2 in common> Fig.1 Ground Emitter Propagation Fig.2 Grounded Emitter Output Characteristics Characteristics Fig.3 DC Current Gain vs. Collector Fig.4 DC Current Gain vs. Collector Current (I) Current (lI) www.rohm.com 3/8 20150527 - Rev.004 © 2015 ROHM Co., Ltd. All rights reserved.
EMT2 / UMT2N / IMT2A Datasheet llElectrical characteristic curves (T = 25°C) a <For Tr1 and Tr2 in common> Fig.5 Collector-Emitter Saturation Voltage Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current(l) vs. Collector Current(ll) Fig.7 Base-Emitter Saturation Voltage Fig.8 Gain Bandwith Product vs. vs. Collector Current (I) Emitter Current www.rohm.com 4/8 20150527 - Rev.004 © 2015 ROHM Co., Ltd. All rights reserved.
EMT2 / UMT2N / IMT2A Datasheet llElectrical characteristic curves (T =25°C) a <For Tr1 and Tr2 in common> Fig.9 Collector Output Capacitance vs. Fig.10 Safe Operating Area Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage Fig.11 Safe Operating Area Fig.12 Safe Operating Area www.rohm.com 5/8 20150527 - Rev.004 © 2015 ROHM Co., Ltd. All rights reserved.
EMT2 / UMT2N / IMT2A Datasheet llDimensions www.rohm.com 6/8 20150527 - Rev.004 © 2015 ROHM Co., Ltd. All rights reserved.
EMT2 / UMT2N / IMT2A Datasheet llDimensions www.rohm.com 7/8 20150527 - Rev.004 © 2015 ROHM Co., Ltd. All rights reserved.
EMT2 / UMT2N / IMT2A Datasheet llDimensions www.rohm.com 8/8 20150527 - Rev.004 © 2015 ROHM Co., Ltd. All rights reserved.
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