AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary The AOT20N25 is fabricated using an advanced high VDS 300V@150℃ voltage MOSFET process that is designed to deliver high I (at V =10V) 20A D GS levels of performance and robustness in popular AC-DC R (at V =10V) < 0.17W DS(ON) GS applications.By providing low R , C and C along DS(on) iss rss with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial 100% UIS Tested power supplies and LED backlighting. 100% R Tested g For Halogen Free add "L" suffix to part number: AOT20N25L Top View D TO-220 G S D G S Absolute Maximum Ratings T =25°C unless otherwise noted A PPaarraammeetteerr SSyymmbbooll AAOOTT2200NN2255 UUnniittss Drain-Source Voltage V 250 V DS Gate-Source Voltage V ±30 V GS Continuous Drain TC=25°C I 20 Current T =100°C D 14 A C Pulsed Drain Current C I 51 DM Avalanche Current C I 4.5 A AS Single pulsed avalanche energy G E 608 mJ AS Peak diode recovery dv/dt dv/dt 5 V/ns T =25°C 208 W C P Power Dissipation B Derate above 25oC D 1.7 W/ oC Junction and Storage Temperature Range T, T -55 to 150 °C J STG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol AOT20N25 Units Maximum Junction-to-Ambient A,D RqJA 65 °C/W Maximum Case-to-sink A RqCS 0.5 °C/W Maximum Junction-to-Case RqJC 0.6 °C/W Rev0: Oct 2011 www.aosmd.com Page 1 of 5

AOT20N25 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250µA, V =0V, T=25°C 250 BV Drain-Source Breakdown Voltage D GS J DSS I =250µA, V =0V, T=150°C 300 V D GS J BV DSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V 0.25 V/ oC /∆TJ V =250V, V =0V 1 IDSS Zero Gate Voltage Drain Current VDS=200V, TG=S125°C 10 m A DS J I Gate-Body leakage current V =0V, V =±30V ±100 nA GSS DS GS V Gate Threshold Voltage V =5V,I =250m A 3.2 3.8 4.5 V GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =10A 0.14 0.17 W DS(ON) GS D g Forward Transconductance V =40V, I =10A 16 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.72 1 V SD S GS I Maximum Body-Diode Continuous Current 20 A S I Maximum Body-Diode Pulsed Current 51 A SM DYNAMIC PARAMETERS C Input Capacitance 1028 pF iss C Output Capacitance V =0V, V =25V, f=1MHz 167 pF oss GS DS C Reverse Transfer Capacitance 11 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.9 3.9 5.9 W g GS DS SWITCHING PARAMETERS Q Total Gate Charge 20 25 nC g Q Gate Source Charge V =10V, V =200V, I =20A 5.7 nC gs GS DS D Q Gate Drain Charge 8 nC gd t Turn-On DelayTime 27 ns D(on) t Turn-On Rise Time V =10V, V =125V, I =20A, 31 ns r GS DS D ttDD((ooffff)) TTuurrnn--OOffff DDeellaayyTTiimmee RRGG==2255WW 7700 nnss t Turn-Off Fall Time 25 ns f trr Body Diode Reverse Recovery Time IF=20A,dI/dt=100A/m s,VDS=100V 179 ns Qrr Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/m s,VDS=100V 1.6 m C A. The value of RqJAis measured with the device in a still air environment with TA =25°C. B. The power dissipation P is based on T =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150°C, Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25°C. J D. The RqJAis the sum of the thermal impedance from junction to case RqJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) G. L=60mH, I =4.5A, V =150V, R =25Ω, Starting T=25°C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Oct 2011 www.aosmd.com Page 2 of 5

AOT20N25 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 100 10V VDS=40V -55°C 25 6.5V 125°C 20 10 I(A)D 15 6V I(A)D 10 1 25°C 5 V =5.5V GS 0 0.1 0 5 10 15 20 25 30 2 4 6 8 10 Fig 1: On-RVeDgSio(nV oClthsa)racteristics Figure 2: TraVnGsSf(eVro Clths)aracteristics 0.30 3 e 0.25 nc 2.5 VGS=10V VGS=10V sta ID=10A 0.20 esi 2 ) R W( n- N) 0.15 O 1.5 RDS(O 0.10 alized 1 m or 0.05 N 0.5 0.00 0 0 5 10 15 20 25 -100 -50 0 50 100 150 200 I (A) Temperature (°C) FFiigguurree 33:: OOnn--RReessiissttaanncceeD vvss.. DDrraaiinn CCuurrrreenntt aanndd GGaattee Figure 4: On-Resistance vs. Junction Temperature Voltage 1.2 1E+02 1E+01 d) 1.1 ze 40 125°C ali 1E+00 m A) or ( (N 1 IS 1E-01 25°C S S D V B 1E-02 0.9 1E-03 0.8 1E-04 -100 -50 0 50 100 150 200 0.2 0.4 0.6 0.8 1.0 Figure 5:Break DownT Jv (s°. JCu)nction Temperature Figure 6: Body-DioVdSDe (CVhoaltrsa)cteristics (Note E) Rev0: Oct 2011 www.aosmd.com Page 3 of 5

AOT20N25 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 V =200V 12 ID=S20A Ciss D 1000 F) p s) 9 e ( (VoltS citanc 100 Coss G 6 a V p a C 10 3 C rss 0 1 0 5 10 15 20 25 30 35 0.1 1 10 100 Figure 7: Gate-CQhga(rngCe) Characteristics Figure 8: CapaVcDiSta(Vncoelt sC)haracteristics 100 25 10m s R DS(ON) 20 10 limited 100m s A) (D ng I 15 ps) DC 1ms ent rati 10 I(AmD 1 10ms urr C 0.1 5 T =150°C J(Max) 0 0.01 0 25 50 75 100 125 150 0.1 1 10 100 1000 TT ((°°CC)) VV ((VVoollttss)) CCAASSEE DDSS Figure 9: Current De-rating (Note B) Figure 10: Maximum Forward Biased Safe Operating Area for AOT20N25 (Note F) 10 D=T /T In descending order on nsient nce 1 TRJq,JPCK==0T.C6+°PCDM/W.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Trasta d si ee zR 0.1 malimal PD Norher ZqJCT 0.01 Single Pulse Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT20N25 (Note F) Rev0: Oct 2011 www.aosmd.com Page 4 of 5

AOT20N25 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds E A R = 1/2 LI AR BVDSS Id Vds ++ VVggss Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I t Isd F dI/dt rr + I Vgs VDC Vdd RM Vdd - Vds Ig Rev0: Oct 2011 www.aosmd.com Page 5 of 5