AO4444 80V N-Channel MOSFET SDMOSTM General Description Product Summary The AO4444 is fabricated with SDMOSTM trench VDS 80V technology that combines excellent R with low gate I (at V =10V) 11A DS(ON) D GS charge and low Qrr.The result is outstanding efficiency R (at V =10V) < 12mW DS(ON) GS with controlled switching behavior. This universal R (at V = 7V) < 14.5mW DS(ON) GS technology is well suited for PWM, load switching and general purpose applications. 100% UIS Tested 100% R Tested g SOIC-8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 80 V DS Gate-Source Voltage V ±25 V GS Continuous Drain TA=25°C I 11 Current T =70°C D 9 A A Pulsed Drain Current C I 80 DM Avalanche Current C I , I 45 A AS AR Avalanche energy L=0.1mH C E , E 101 mJ AS AR T =25°C 3.1 A P W Power Dissipation B T =70°C D 2 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 59 75 °C/W Maximum Junction-to-Lead Steady-State RqJL 16 24 °C/W Rev1: Nov. 2010 www.aosmd.com Page 1 of 6

AO4444 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 80 V DSS D GS V =80V, V =0V 10 I Zero Gate Voltage Drain Current DS GS m A DSS T =55°C 50 J I Gate-Body leakage current V =0V, V = ±25V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 2.6 3 3.8 V GS(th) DS GS D I On state drain current V =10V, V =5V 80 A D(ON) GS DS V =10V, I =11A 10 12 GS D mW R Static Drain-Source On-Resistance T =125°C 18 22 DS(ON) J V =7V, I =10A 11.6 14.5 mW GS D g Forward Transconductance V =5V, I =11A 32 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS I Maximum Body-Diode Continuous Current 4.5 A S DYNAMIC PARAMETERS C Input Capacitance 1900 2386 2865 pF iss C Output Capacitance V =0V, V =40V, f=1MHz 190 276 360 pF oss GS DS C Reverse Transfer Capacitance 60 100 140 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.4 0.8 1.2 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 30 38 46 nC g Q Gate Source Charge V =10V, V =40V, I =11A 10 13 16 nC gs GS DS D Q Gate Drain Charge 6 10 14 nC gd t Turn-On DelayTime 13 ns D(on) t Turn-On Rise Time V =10V, V =40V, R =3.64W , 9 ns r GS DS L t Turn-Off DelayTime R =3W 23 ns D(off) GEN t Turn-Off Fall Time 5 ns f trr Body Diode Reverse Recovery Time IF=11A, dI/dt=500A/m s 12 18 24 ns Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/m s 45 65 85 nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using ≤ 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT=25°C. J D. The RqJA is the sum of the thermal impedence from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: Nov. 2010 www.aosmd.com Page 2 of 6

AO4444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 V =5V 8V DS 10V 80 80 60 7V 60 (A)D 6V (A)D I 40 I 40 125°C 20 20 25°C V =5V GS 0 0 0 1 2 3 4 5 0 2 4 6 8 10 VDS (Volts) VGS(Volts) Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E) 18 2.2 16 ance 2 VGS=10V ) 14 sist 1.8 ID=11A WWWWm VGS=7V Re 1.6 (N) 12 On- S(O d 1.4 D e R 10 z mali 1.2 VGS=7V 8 VGS=10V Nor 1 ID=10A 6 0.8 0 5 10 15 20 0 25 50 75 100 125 150 175 I (A) D Temperature (°C) Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature Voltage (Note E) (Note E) 25 1.0E+02 I =11A D 1.0E+01 20 40 1.0E+00 ) 15 125°C 125°C WWWWm A) 1.0E-01 (ON) I (S 1.0E-02 DS( 10 25°C R 25°C 1.0E-03 5 1.0E-04 0 1.0E-05 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS (Volts) VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E) (Note E) Rev1: Nov. 2010 www.aosmd.com Page 3 of 6

AO4444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3500 V =40V DS 3000 8 ID=11A C F) 2500 iss p olts) 6 nce ( 2000 V a V (GS 4 pacit 1500 a C 1000 2 C 500 oss C 0 0 rss 0 10 20 30 40 0 20 40 60 80 Q (nC) V (Volts) g DS Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000 1000.0 nt e urr 100.0 C valanche 100 TA=25°C TA=100°C Amps) 10.0 RlimDSit(eOdN) 1100m0sm s ak A TA=125°C I (D 1.0 1ms e T =150°C T =150°C P A J(Max) 10ms A) 0.1 TA=25°C (R DC 10s A I 10 0.0 1 10 100 1000 0.01 0.1 1 10 100 Time in avalanche, tA m(mmm s) VDS (Volts) Figure 9: Single Pulse Avalanche capability (Note Figure 10: Maximum Forward Biased C) Safe Operating Area (Note F) 10000 T =25°C A 1000 W) er (100 w o P 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev1: Nov. 2010 www.aosmd.com Page 4 of 6

AO4444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 D=T /T In descending order on ent TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nsi nce 1 RqJA=75°C/W Tra sta d si e e z R 0.1 mali mal NorATher 0.01 PD J Single Pulse Zqqqq T on T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 200 12 25 3 di/dt=800A/m s 125ºC di/dt=800A/m s 10 125ºC 2.5 170 20 I rm 25ºC 8 2 Q (nC)rr 111400 125ºC 6 I (A)rm t (ns)rr1105 trr 25ºC 1.5 S 4 1 125ºC 80 Qrr 25ºC 2 5 S 0.5 25ºC 50 0 0 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 I (A) I (A) S S Figure 13: Diode Reverse Recovery Charge and Peak Figure 14: Diode Reverse Recovery Time and Current vs. Conduction Current Softness Factor vs. Conduction Current 120 25 35 2.5 Is=20A 30 Is=20A 125ºC 20 2 90 25 40 125ºC 25ºC Q (nC)rr 60 125ºC 1105 I(A)rm t (ns)rr1250 25ºC trr 11.5 S Q rr 10 125º 30 25ºC 5 S 0.5 5 Irm 25ºC 0 0 0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 di/dt (Am/mmm s) di/dt (Am/mmm s) Figure 15: Diode Reverse Recovery Charge and Figure 16: Diode Reverse Recovery Time and Peak Current vs. di/dt Softness Factor vs. di/dt Rev1: Nov. 2010 www.aosmd.com Page 5 of 6

AO4444 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds EA R = 1/2 LIAR BVDSS Id Vds + Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev1: Nov. 2010 www.aosmd.com Page 6 of 6