STN3NF06L N-channel 60 V, 0.07 Ω typ., 4 A STripFET™ II Power MOSFET in a SOT-223 package Datasheet - production data Features Order code VDS RDS(on) max. ID STN3NF06L 60 V 0.1 Ω 4 A  Exceptional dv/dt capability  100% avalanche tested  Low threshold drive Applications  Switching applications Figure 1: Internal schematic diagram Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also suitable for any application with low gate charge drive requirements. Table 1: Device summary Order code Marking Package Packing STN3NF06L 3NF06L SOT-223 Tape and reel July 2017 DocID7798 Rev 9 1/12 This is information on a product in full production. www.st.com

Contents STN3NF06L Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 SOT-223 package information .......................................................... 9 5 Revision history ............................................................................ 11 2/12 DocID7798 Rev 9

STN3NF06L Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±16 V ID(1) Drain current (continuous) at Tc = 25 °C 4 A ID Drain current (continuous) at Tc = 100 °C 2.9 A IDM(2) Drain current (pulsed) 16 A PTOT Total dissipation at Tpcb = 25 °C 3.3 W dv/dt (3) Peak diode recovery voltage slope 10 V/ns EAS(4) Single pulse avalanche energy 200 mJ Tj Operating junction temperature range - 55 to 150 °C Tstg Storage temperature range Notes: (1)Current limited by the package. (2)Pulse width limited by safe operating area. (3)ISD ≤ 3 A, di/dt ≤ 150 A/μs, VDD ≤ V(BR)DSS (4)Starting Tj = 25 °C, ID = 4 A, VDD = 30 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-pcb Thermal resistance junction-pcb (1) 38 °C/W Rthj-pcb Thermal resistance junction-pcb(2) 100 °C/W Notes: (1)When Mounted on FR-4 board 1 inch2 pad, 2 oz. of Cu and t <10 s. (2)When mounted on minimum recommended footprint. DocID7798 Rev 9 3/12

Electrical characteristics STN3NF06L 2 Electrical characteristics T = 25 °C unless otherwise specified C Table 4: On/off-state Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V(BR)DSS voltage VGS = 0 V, ID = 250 μA 60 V VGS = 0 V, VDS = 60 V 1 µA Zero gate voltage drain IDSS current VGS = 0 V, VDS = 60 V 10 µA TC = 125 °C(1) IGSS Gate body leakage current VDS = 0 V, VGS = ±16 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 2.8 V Static drain-source VGS= 10 V, ID= 1.5 A 0.07 0.10 Ω RDS(on) on-resistance VGS= 5 V, ID= 1.5 A 0.085 0.12 Ω Notes: (1)Defined by design, not subject to production test. Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance - 340 pF Coss Output capacitance VDS =25 V, f=1 MHz, VGS=0 V - 63 pF Reverse transfer Crss capacitance - 30 pF Qg Total gate charge VDD = 48 V, ID = 3 A - 7 9 nC Qgs Gate-source charge VGS= 0 to 5 V - 1.5 nC (see Figure 14: "Test circuit for Qgd Gate-drain charge gate charge behavior") - 2.8 nC Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD= 30 V, ID = 1.5 A, - 9 - ns tr Rise time RG = 4.7 Ω - 25 - ns VGS = 5 V td(off) Turn-off delay time - 20 - ns (see Figure 13: "Test circuit for resistive load switching times" tf Fall time and Figure 18: "Switching time - 10 - ns waveform") 4/12 DocID7798 Rev 9

STN3NF06L Electrical characteristics Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD(1) Forward on voltage ISD= 4 A, VGS=0 V - 1.5 V trr Reverse recovery time ISD= 4 A, di/dt = 100 A/μs, - 50 ns Qrr Rcheavregres e recovery V(sDeDe= 2F5ig Vur,e T 1j=51:5 "0T e°Cst circuit for - 88 nC inductive load switching and Reverse recovery IRRM current diode recovery times") - 3.5 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID7798 Rev 9 5/12

Electrical characteristics STN3NF06L 2.1 Electrical characteristics (curves) Figure 3: Thermal impedance Figure 2: Safe operating area Figure 4: Output characteristics Figure 5: Transfer characteristics GC91920a Figure 6: Static drain-source on-resistance Figure 7: Gate charge vs. gate-source voltage GC91940a GC91950a 6/12 DocID7798 Rev 9

STN3NF06L Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs Figure 11: Normalized V(BR)DSS vs temperature temperature GC91980a GC93240 Figure 12: Source-drain diode forward characteristics DocID7798 Rev 9 7/12

Test circuits STN3NF06L 3 Test circuits Figure 13: Test circuit for resistive load Figure 14: Test circuit for gate charge switching times behavior Figure 15: Test circuit for inductive load Figure 16: Unclamped inductive load test switching and diode recovery times circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform 8/12 DocID7798 Rev 9

STN3NF06L Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 SOT-223 package information Figure 19: SOT-223 package outline DocID7798 Rev 9 9/12

Package information STN3NF06L Table 8: SOT-223 package mechanical data mm Dim. Min. Typ. Max. A 1.8 A1 0.02 0.1 B 0.6 0.7 0.85 B1 2.9 3 3.15 c 0.24 0.26 0.35 D 6.3 6.5 6.7 e 2.3 e1 4.6 E 3.3 3.5 3.7 H 6.7 7.0 7.3 V 10º Figure 20: SOT-223 recommended footprint (dimensions are in mm) 10/12 DocID7798 Rev 9

STN3NF06L Revision history 5 Revision history Table 9: Document revision history Date Revision Changes 21-Jun-2004 5 Complete version. 04-Oct-2006 6 New template, no content change. 01-Feb-2007 7 Typo mistake on Table 2. 12-Jun-2008 8 Corrected marking on Table 1 Modified internal schematic diagram on cover page. 03-Jul-2017 9 Updated Section 4: "Package information". Minor text changes. DocID7798 Rev 9 11/12

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