STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 N-channel 950 V, 0.275 Ω typ., 17.5 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 Datasheet p- parocdukcatiogn deasta Features Order code VDS RDS(on) max. ID PTOT STB20N95K5 250 W STF20N95K5 40 W 950 V 0.330 Ω 17.5 A STP20N95K5 250 W STW20N95K5  Industry’s lowest R x area DS(on)  Industry’s best FoM (figure of merit)  Ultra-low gate charge Figure 1: Internal schematic diagram  100% avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STB20N95K5 D²PAK Tape and reel STF20N95K5 TO-220FP 20N95K5 STP20N95K5 TO-220 Tube STW20N95K5 TO-247 January 2017 DocID16825 Rev 5 1/22 This is information on a product in full production. www.st.com

Contents STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 D2PAK package information ............................................................ 10 4.2 TO-220FP package information ...................................................... 13 4.3 TO-220 type A package information ................................................ 15 4.4 TO-247 package information ........................................................... 17 4.5 D2PAK packing information ............................................................. 19 5 Revision history ............................................................................ 21 2/22 DocID16825 Rev 5

STB20N95K5, STF20N95K5, STP20N95K5, Electrical ratings STW20N95K5 1 Electrical ratings Table 2: Absolute maximum ratings Value D²PAK Symbol Parameter Unit TO-220 TO-220FP TO-247 VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 17.5 A ID Drain current (continuous) at TC = 100 °C 11 A ID(1) Drain current (pulsed) 70 A PTOT Total dissipation at TC = 25 °C 250 40 W Gate-source human body model (R= 1,5 kΩ, ESD 2 kV C = 100 pF) Insulation withstand voltage (RMS) from all VISO three leads to external heat sink (t = 1 s; 2500 V TC = 25 °C) dv/dt (2) Peak diode recovery voltage slope 6 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 Tj Operating junction temperature range -55 to 150 °C Tstg Storage temperature range Notes: (1)Pulse width limited by safe operating area. (2)ISD ≤ 17.5 A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS (3)VDS ≤ 760 V Table 3: Thermal data Value Symbol Parameter Unit D²PAK TO-220 TO-247 TO-220FP Rthj-case Thermal resistance junction-case 0.5 3.1 Rthj-amb Thermal resistance junction-ambient 62.5 50 62.5 °C/W Rthj-pcb(1) Thermal resistance junction-pcb 30 Notes: (1) When mounted on 1 inch² FR-4 board, 2 Oz Cu. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax.) 6 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 200 mJ DocID16825 Rev 5 3/22

Electrical characteristics STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 2 Electrical characteristics T = 25 °C unless otherwise specified C Table 5: On/off-state Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 950 V VGS = 0 V, VDS = 950 V 1 µA IDSS Zero-gate voltage drain current VGS = 0 V, VDS = 950 V 50 µA TC = 125 °C(1) IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 9 A 0.275 0.330 Ω Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance - 1550 - pF Coss Output capacitance VVDGSS == 100 V0 V, f = 1 MHz, - 140 - pF Crss Reverse transfer capacitance - 1 - pF Equivalent capacitance energy Co(er)(1) related VGS = 0 V, VDS = 0 to - 65 - pF Equivalent capacitance time 760 V Co(tr)(2) related 178 - pF Rg Intrinsic gate resistance f = 1 MHz , ID = 0 A - 3.5 - Ω Qg Total gate charge VDD = 760 V, - 48 - nC Qgs Gate-source charge ID = 17.5 A - 9 - nC VGS= 10 V (see Figure 20: "Test Qgd Gate-drain charge circuit for gate charge - 32.5 - nC behavior") Notes: (1)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. (2)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 4/22 DocID16825 Rev 5

STB20N95K5, STF20N95K5, STP20N95K5, Electrical characteristics STW20N95K5 Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit Turn-on td(on) delay time VDD= 475 V, ID = 9 A, RG = 4.7 Ω - 18 - ns tr Rise time VGS = 10 V - 9 - ns (see Figure 19: "Test circuit for resistive Turn-off td(off) delay time load switching times" and Figure 24: - 65 - ns "Switching time waveform") tf Fall time - 18 - ns Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain ISD current - 17.5 A Source-drain ISDM(1) current (pulsed) - 70 A Forward on VSD(2) voltage ISD = 17.5 A, VGS = 0 V - 1.5 V Reverse recovery trr time ISD = 17.5 A, di/dt = 100 A/µs, - 513 ns Reverse recovery VDD = 60 V Qrr charge (see Figure 21: "Test circuit for - 12 µC inductive load switching and diode IRRM Rcuervreenrst e recovery recovery times") - 46 A Reverse recovery trr time ISD = 17.5 A, di/dt = 100 A/µs - 670 ns Reverse recovery VDD = 60 V, Tj = 150 °C Qrr charge (see Figure 21: "Test circuit for - 15 µC inductive load switching and diode Reverse recovery recovery times") IRRM current - 44 A Notes: (1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR) GSO Gate-source breakdown voltage IGS = ± 1 mA, ID = 0 A 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DocID16825 Rev 5 5/22

Electrical characteristics STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 2.1 Electrical characteristics (curves) Figure 3: Thermal impedance for D²PAK and Figure 2: Safe operating area for D²PAK and TO-220 TO-220 Figure 4: Safe operating area for TO-220FP Figure 5: Thermal impedance for TO-220FP Figure 6: Safe operating area for TO-247 Figure 7: Thermal impedance for TO-247 6/22 DocID16825 Rev 5

STB20N95K5, STF20N95K5, STP20N95K5, Electrical characteristics STW20N95K5 Figure 8: Output characteristics Figure 9: Transfer characteristics Figure 10: Gate charge vs gate-source voltage Figure 11: Static drain-source on-resistance Figure 12: Capacitance variation Figure 13: Output capacitance stored energy DocID16825 Rev 5 7/22

Electrical characteristics STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Figure 14: Normalized gate threshold voltage vs Figure 15: Normalized on-resistance vs temperature temperature Figure 16: Maximum avalanche energy vs. starting TJ Figure 17: Normalized V(BR)DSS vs. temperature Figure 18: Source-drain diode forward characteristics 8/22 DocID16825 Rev 5

STB20N95K5, STF20N95K5, STP20N95K5, Test circuits STW20N95K5 3 Test circuits Figure 19: Test circuit for resistive load Figure 20: Test circuit for gate charge switching times behavior VDD RL I= CONST VGS G 100 Ω D.U.T. pulse width + 2.7 kΩ 2200 VG μF 47 kΩ 1 kΩ AM01469v10 Figure 21: Test circuit for inductive load switching and diode recovery times Figure 22: Unclamped inductive load test circuit Figure 23: Unclamped inductive waveform Figure 24: Switching time waveform DocID16825 Rev 5 9/22

Package information STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D2PAK package information Figure 25: D²PAK (TO-263) type A package outline 0079457_A_rev22 10/22 DocID16825 Rev 5

STB20N95K5, STF20N95K5, STP20N95K5, Package information STW20N95K5 Table 10: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 10.40 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° DocID16825 Rev 5 11/22

Package information STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Figure 26: D²PAK (TO-263) recommended footprint (dimensions are in mm) 12/22 DocID16825 Rev 5

STB20N95K5, STF20N95K5, STP20N95K5, Package information STW20N95K5 4.2 TO-220FP package information Figure 27: TO-220FP package outline DocID16825 Rev 5 13/22

Package information STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Table 11: TO-220FP package mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 14/22 DocID16825 Rev 5

STB20N95K5, STF20N95K5, STP20N95K5, Package information STW20N95K5 4.3 TO-220 type A package information Figure 28: TO-220 type A package outline DocID16825 Rev 5 15/22

Package information STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Table 12: TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 16/22 DocID16825 Rev 5

STB20N95K5, STF20N95K5, STP20N95K5, Package information STW20N95K5 4.4 TO-247 package information Figure 29: TO-247 package outline 0075325_8 DocID16825 Rev 5 17/22

Package information STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Table 13: TO-247 package mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 18/22 DocID16825 Rev 5

STB20N95K5, STF20N95K5, STP20N95K5, Package information STW20N95K5 4.5 D2PAK packing information Figure 30: Tape outline DocID16825 Rev 5 19/22

Package information STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Figure 31: Reel outline Table 14: D²PAK tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 20/22 DocID16825 Rev 5

STB20N95K5, STF20N95K5, STP20N95K5, Revision history STW20N95K5 5 Revision history Table 15: Document revision history Date Revision Changes 25-Nov-2009 1 First release. 12-Jan-2010 2 Corrected VGS value in Table 2: Absolute maximum ratings. Inserted device in D2PAK. Document status promoted from preliminary data to datasheet. 22-Dec-2011 3 Added: Section 2.1: Electrical characteristics (curves) Updated Section 4: Package mechanical data. Added Section 5: Packaging mechanical data. Minor text changes. 06-Jun-2012 4 Figure 9: Transfer characteristics has been updated. Updated title, features, description and schematic diagram in cover page. Minor text changes in Section 1: "Electrical ratings" and Section 2: 16-Jan-2017 5 "Electrical characteristics". Updated Section 2.1: "Electrical characteristics (curves)" Updated package information section. DocID16825 Rev 5 21/22

STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 22/22 DocID16825 Rev 5

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: S TMicroelectronics: STF20N95K5 STP20N95K5 STW20N95K5 STB20N95K5