NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 Features • Low R at Low Gate Voltage DS(on) • Low Threshold Voltage www.onsemi.com • High Power and Current Handling Capability • This is a Pb−Free Device V(BR)DSS RDS(on) MAX ID MAX Applications 75 m(cid:4) @ −10 V −2.2 A • Load Switch −30 V 110 m(cid:4) @ −4.5 V −1.8 A • Optimized for Battery and Load Management Applications in 150 m(cid:4) @ −2.5 V −1.0 A Portable Equipment like Cell Phones, PDA’s, Media Players, etc. P−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) S Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −30 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Steady TA = 25°C −2.2 G Current (Note 1) State TA = 85°C ID −1.5 A t ≤ 5 s TA = 25°C −3.5 D Power Dissipation Steady 0.48 (Note 1) State TA = 25°C PD W MARKING DIAGRAM/ t ≤ 5 s 1.25 3 PIN ASSIGNMENT Pulsed Drain Current tp =10 (cid:2)s IDM −15.0 A 3 Drain Operating Junction and Storage Temperature TJ, −55 to °C 1 Tstg 150 SO2T−23 TRFM(cid:2) Source Current (Body Diode) IS −1.0 A CASE 318 (cid:2) Lead Temperature for Soldering Purposes TL 260 °C STYLE 21 1 2 (1/8″ from case for 10 s) Gate Source Stresses exceeding those listed in the Maximum Ratings table may damage the TRF = Specific Device Code device. If any of these limits are exceeded, device functionality should not be M = Date Code assumed, damage may occur and reliability may be affected. (cid:2) = Pb−Free Package THERMAL RESISTANCE RATINGS (Note: Microdot may be in either location) Parameter Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) R(cid:3)JA 260 °C/W ORDERING INFORMATION Junction−to−Ambient − t ≤ 10 s (Note 1) R(cid:3)JA 100 Device Package Shipping† 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) NTR4171PT1G SOT−23 3000/Tape & Reel (Pb−Free) NTR4171PT3G SOT−23 10000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: October, 2016 − Rev. 2 NTR4171P/D

NTR4171P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 (cid:2)A −30 V Drain−to−Source Breakdown Voltage V(BR)DSS ID = −250 (cid:2)A, Reference to 25°C 24 mV/°C Temperature Coefficient /TJ Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −24 V, TJ = 25°C −1.0 (cid:2)A VGS = 0 V, VDS = −24 V, TJ = 85°C −5.0 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = (cid:2)12 V ±0.1 (cid:2)A ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 (cid:2)A −0.7 −1.15 −1.4 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 3.5 mV/°C Drain−to−Source On−Resistance RDS(on) VGS = −10 V, ID = −2.2 A 50 75 m(cid:4) VGS = −4.5 V, ID = −1.8 A 60 110 VGS = −2.5 V, ID = −1.0 A 90 150 Forward Transconductance gFS VDS = −5.0 V, ID = −2.2 A 7.0 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss 720 pF Output Capacitance Coss VGS =V 0D SV ,= f −=1 15. 0V MHz, 95 Reverse Transfer Capacitance Crss 65 Total Gate Charge QG(TOT) 15.6 nC Threshold Gate Charge QG(TH) VGS = −10 V, VDS = −15 V, 0.7 Gate−to−Source Charge QGS ID = −3.5 A 1.6 Gate−to−Drain Charge QGD 2.6 Total Gate Charge QG(TOT) 7.4 nC Threshold Gate Charge QG(TH) VGS = −4.5 V, VDS = −15 V, 0.7 Gate−to−Source Charge QGS ID = −3.5 A 1.6 Gate−to−Drain Charge QGD 2.6 Gate Resistance RG 6.1 (cid:4) SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time td(on) 8.0 ns Rise Time tr VGS = −10 V, VDS = −15 V, 11 Turn−Off Delay Time td(off) ID = −3.5 A, RG = 6 (cid:4) 32 Fall Time tf 14 Turn−On Delay Time td(on) 9.0 ns Rise Time tr VGS = −4.5 V, VDS = −15 V, 16 Turn−Off Delay Time td(off) ID = −3.5 A, RG = 6 (cid:4) 25 Fall Time tf 22 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −1.0 A, TJ = 25°C −0.8 −1.2 V Reverse Recovery Time tRR 14 ns Charge Time ta VGS = 0 V, IS = −1.0 A, 10 Discharge Time tb dISD/dt = 100 A/(cid:2)s 4.0 Reverse Recovery Charge QRR 8.0 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 3. Pulse Test: Pulse Width (cid:3) 300 (cid:2)s, Duty Cycle (cid:3) 2% 4. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2

NTR4171P TYPICAL CHARACTERISTICS 10 10 −4.5 V 9.0 9.0 VDS = −5 V −2.5 V A) 8.0 −10 V A) 8.0 NT ( 7.0 NT ( 7.0 E E R 6.0 R 6.0 R R U U C 5.0 −2.2 V C 5.0 N N AI 4.0 AI 4.0 TJ = 25°C R R , DD 3.0 VGS = −2.0 V , DD 3.0 −I 2.0 −I 2.0 TJ = 125°C 1.0 1.0 TJ = −55°C 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.0 1.25 1.5 1.75 2.0 2.25 2.5 2.75 3.0 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics (cid:4)) (cid:4)) E ( 0.30 E ( 0.30 C C SISTAN 0.25 TIDJ == −225.°2C A SISTAN 0.25 −2.0 V −2.2 V TJ = 25°C E E R R E 0.20 E 0.20 C C −2.5 V R R U 0.15 U 0.15 O O S S − − O O T 0.10 T 0.10 N− N− −4.5 V AI AI R 0.05 R 0.05 , Don) 0 , Don) 0 VGS = −10 V DS( 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 DS( 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 R R −VGS, GATE VOLTAGE (V) −ID, DRAIN CURRENT (A) (cid:4)) Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and E ( Voltage Gate Voltage C N A T 1.6 10,000 S ESI 1.5 VGS = −4.5 V E R 1.4 ID = −2.2 A SOURC 11..32 GE (nA)1000 TJ = 150°C − A −TO 1.1 EAK TJ = 125°C N 1.0 L AI , S 100 R 0.9 S D D D 0.8 I E Z LI 0.7 A M 0.6 10 R −50 −25 0 25 50 75 100 125 150 0 5.0 10 15 20 25 30 O , Nn) TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) o S( Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current D R Temperature vs. Voltage www.onsemi.com 3

NTR4171P TYPICAL CHARACTERISTICS − pF)11018900000000 Ciss VTf =JG =S1 =2M 50H° CzV OLTAGE (V) 1102 −VDS QT −VGS 111246DSV, DRAIN CE ( 700 CE V8.0 10 −TO C, CAPACITAN 423560000000000 Coss GATE−TO−SOUR246...000 QGS QGD IVTDJD =S= −=23 5−.°51C 5A V 468...000−SOURCE VOLTA 1000 Crss V, GS 0 02.0GE (V 0 5.0 10 15 20 25 30− 0 2.0 4.0 6.0 8.0 10 12 14 16 ) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 10 VGS = −10 V VIDD =D −=3 −.51 5A V td(off) NT (A) TJ = 125°C 100 E E (ns) tf CURR 1.0 TJ = 150°C M E TI C t, 10 tr UR O td(on) , SS TJ = 25°C −I TJ = −55°C 1.0 0.1 1.0 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 RG, GATE RESISTANCE ((cid:4)) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current vs. Gate Resistance 1.5 30 1.4 ID = −250 (cid:2)A 25 1.3 1.2 20 V) W) (GS(th) 11..01 WER ( 15 V O − P 0.9 10 0.8 5.0 0.7 0.6 0 −50 −25 0 25 50 75 100 125 150 0.001 0.01 0.1 1.0 10 100 1000 TJ, TEMPERATURE (°C) SINGLE PULSE TIME (s) Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4

NTR4171P TYPICAL CHARACTERISTICS 100 VGS = −12 V Single Pulse A) TC = 25°C T ( 10 10 (cid:2)s N E R 100 (cid:2)s R U C 1.0 1 ms N AI 10 ms R D , D 0.1 −I RDS(on) Limit Thermal Limit Package Limit dc 0.01 0.1 1.0 10 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area L 1.0 A M Duty Cycle = 0.5 R HED) TE NT ALIZ 0.2 EM NSIOR 0.1 AN0.1 TRE ( 0.05 E S VN CTIPO 0.02 ES FE 0.01 FR E R(t), 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (s) Figure 14. FET Thermal Response www.onsemi.com 5

NTR4171P PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2.CONTROLLING DIMENSION: MILLIMETERS. 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4.DPIRMOETNRSUIOSNIOSN DS ,A ONRD GEA DTOE NBOURT RINSC.LUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0(cid:3) −−− 10(cid:3) 0(cid:3) −−− 10(cid:3) A1 c SIDE VIEW SEE VIEW C STYLE 21: END VIEW PIN 1. GATE 2. SOURCE 3. DRAIN RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com NTR4171P/D 6

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