MT3S20TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 FEATURES 1 .7±0.1 105 • Low Noise Figure: NF = 1.45dB (typ.) (@ f=1GHz) 0.05 +0.3-0. • High Gain: |S21e|2 = 12dB (typ.) (@ f=1GHz) 2.0±0.1 0.65± 12 3 0. 5 Marking 0.0 5 6± 3 ±0.0 0.16 7 0. M U 1.BASE 2.EMITTER 3.COLLECTOR UFM 1 2 JEDEC - JEITA - TOSHIBA 2-2U1B Absolute Maximum Ratings (Ta = 25°C) Weight: 6.6mg (typ.) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 1.5 V Collector current IC 80 mA Base current IB 10 mA Collector power dissipation PC(Note1) 900 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note.1 : The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t)) Note.2 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2008-02 1 2014-03-01

MT3S20TU Microwave Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ Max Unit Transition frequency fT VCE = 5V, IC = 30mA 5 7 ⎯ GHz 2 |S21e| (1) VCE = 5V, IC = 50mA, f = 500MHz ⎯ 17.5 ⎯ Insertion gain dB 2 |S21e| (2) VCE = 5V, IC = 50mA, f = 1GHz 10 12 ⎯ Noise figure NF VCE = 5V, IC = 20mA, f = 1GHz ⎯ 1.45 2 dB 3rd order intermodulation distortion output VCE = 5V, IC = 50mA, f = 500MHz, OIP3 26 30 ⎯ dBmW intercept point ⊿f=1MHz Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ Max Unit Collector cut-off current ICBO VCB = 10V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 1V, IC = 0 ⎯ ⎯ 0.5 μA DC current gain hFE VCE = 5V, IC = 50mA 100 150 200 ⎯ Reverse transfer capacitance Cre VCB = 5V, IE = 0, f = 1MHz (Note3) ⎯ 0.75 1 pF Note.3 : Cre is measured using a 3-terminal method with capacitance bridge Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 2 2014-03-01

MT3S20TU hFE-IC IC-VBE 1000 100 COMMON EMITTER COMMON EMITTER ＶＣＥ＝５Ｖ ＶＣＥ＝５Ｖ Ｔａ＝２５℃ ) 10 Ｔａ＝２５℃ E mA F h (C gain 100 ent I 1 nt urr e c 0.1 r - r r u o C c ect D oll 0.01 C 10 0.001 1 10 100 0 0.2 0.4 0.6 0.8 1 Collector-current IC(mA) Base-emitter voltage VBE(V) IC-VCE fT-IC 8 100 ＣＯＭＭＴａＯ＝Ｎ２ Ｅ５Ｍ℃ＩＴＴＥＲ 7 ＶＣＥ＝５Ｖ z) Ｔａ＝２５℃ ) IB=800μA 720μA 640μA 560μA H A 80 G 6 m 480μA ( ( T nt IC 60 400μA ncy f 5 e 320μA e 4 rr u u q ctor-c 40 126400μμAA on fre 23 Colle 20 80μA ansiti 1 0 Tr 0 0 3 6 9 12 15 1 10 100 Collector-emitter voltage VCE(V) Collector-current IC(mA) |S21e|2-IC NF, Ga -IC 20 4 16 ＶＣＥ＝５Ｖ f=500MHz ＶＣＥ＝５Ｖ 18 Ｔａ＝２５℃ 3.5 ｆ＝１ＧＨｚ Ｇａ 14 (dB) 1146 B) 3 Ｔａ＝２５℃ 12dB) 2 ( |1e 12 F(d 2.5 10Ga n |S2 10 f=1000MHz re N 2 8 gain n gai 68 e figu 1.5 ＮＦ 6 ated o s 1 4 ci erti 4 Noi so ns 2 0.5 2 As I 0 0 0 1 10 100 1 10 100 Collector-current IC(mA) Collector-current IC(mA) 3 2014-03-01

MT3S20TU Cre,Cob-VCB OIP3-IC pF) 3 ＩＥ＝０ on W) 3368 C(re pF) 2.5 Ｔｆ＝ａ＝１２Ｍ５Ｈ℃ｚ storti dBm 34 pacitance (ance Cob 1.52 Cob dulation di ntOIP(3233802 VCE=4VVCE=5V everse transfer ca Output capacit 0.501 Cre hird order intermo utput intercept poi 122228024610 Ｐｉｎｆ＝（＝Ｔ⊿ａ－５＝１０１Ｍ２０５５ＭＨｄ℃ｚＢＨ）ｍｚＷ100 R 0.1 1 10 T o Collector-base voltage VCB(V) Collector-current IC(mA) PC-Ta 1000 W) 900 The device is mounted on a ceramic- m board(25.4mm×25.4mm×0.8mm(t)) ( 800 C P n 700 o ati 600 p si 500 dis 400 wer 300 Device only o p 200 r o ct 100 e oll 0 C 0 25 50 75 100 125 150 Ambient temperature Ta(°C) 4 2014-03-01

MT3S20TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). 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