2N4427 www.centralsemi.com SILICON DESCRIPTION: NPN RF TRANSISTOR The CENTRAL SEMICONDUCTOR 2N4427 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 2.0 V Continuous Collector Current IC 400 mA Continuous Base Current IB 400 mA Power Dissipation PD 1.0 W Power Dissipation (TC=25°C) PD 3.5 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEV VCE=40V, VBE=1.5V 100 μA ICEV VCE=12V, VBE=1.5V, TC=150°C 5.0 mA ICEO VCE=12V 20 μA IEBO VEB=2.0V 100 μA BVCER IC=5.0mA, RBE=10Ω 40 V BVCEO IC=5.0mA 20 V VCE(SAT) IC=100mA, IB=20mA 0.5 V hFE VCE=5.0V, IC=100mA 10 200 hFE VCE=5.0V, IC=360mA 5.0 fT VCE=15V, IC=50mA, f=200MHz 500 MHz Cob VCB=12V, IE=0, f=1.0MHz 4.0 pF Gpe VCC=12V, Pin=100mW, f=175MHz 10 dB η VCC=12V, Pout=1.0W, f=175MHz 50 % Pin VCC=12V, Pout=1.0W, f=175MHz 100 mW R1 (4-June 2013)

2N4427 SILICON NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (4-June 2013) www.centralsemi.com

2N4427 SILICON NPN RF TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS R1 (4-June 2013) www.centralsemi.com

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