【晶体管 - FET，MOSFET - 单_IPT004N03LATMA1】封装/厂家_IPT004N03LATMA1中文资料_价格

ICGOO在线商城 > 分立半导体产品 > 晶体管 - FET，MOSFET - 单 > IPT004N03LATMA1

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型号： IPT004N03LATMA1
制造商： Infineon
库位|库存： xxxx|xxxx
要求：无整包装整卷装连续切割带批次不详

数量阶梯	香港交货	国内含税
+xxxx	$xxxx	￥xxxx

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IPT004N03LATMA1产品简介：

ICGOO电子元器件商城为您提供IPT004N03LATMA1由Infineon设计生产，在icgoo商城现货销售，并且可以通过原厂、代理商等渠道进行代购。 IPT004N03LATMA1价格参考。InfineonIPT004N03LATMA1封装/规格：晶体管 - FET，MOSFET - 单， N-Channel 30V 300A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount PG-HSOF-8-1。您可以下载IPT004N03LATMA1参考资料、Datasheet数据手册功能说明书，资料中有IPT004N03LATMA1 详细功能的应用电路图电压和使用方法及教程。

Infineon Technologies（英飞凌）的IPT004N03LATMA1是一款N沟道MOSFET，属于晶体管中的功率MOSFET类别。该器件具有低导通电阻（RDS(on)）和高开关效率，适用于需要高效能和紧凑设计的电源管理系统。

其主要应用场景包括：

1. 电源转换系统：广泛用于开关电源（SMPS）、DC-DC转换器中，特别是在低压大电流输出场合，如服务器、通信设备和工业电源模块，能够有效降低导通损耗，提高整体能效。

2. 电机驱动：适用于中小型电机控制，如家用电器（洗衣机、风扇）、电动工具和工业自动化设备中的H桥或半桥驱动电路，具备良好的热稳定性和快速响应能力。

3. 电池管理系统（BMS）：在锂离子电池保护板中作为充放电控制开关，利用其低内阻特性减少发热，提升系统安全性与续航能力。

4. 汽车电子：由于该型号采用先进的沟槽技术并具备良好可靠性，常用于车载电源系统，如车身控制模块、车灯驱动、小型执行器控制等符合AEC-Q101标准的应用环境。

5. 消费类电子产品：用于笔记本电脑、显示器、适配器等设备的电源管理单元，支持高密度集成设计。

IPT004N03LATMA1采用PG-HSOF-8封装，便于表面贴装，适合自动化生产。其30V耐压和4mΩ超低导通电阻使其在高效率、小体积要求的应用中表现优异。综合来看，该MOSFET适用于对能效、散热和空间布局有较高要求的中低功率场景。

产品参数图文手册常见问题

参数	数值
产品目录	分立半导体产品
描述	MOSFET N-CH 30V 300A 8HSOF
产品分类	FET - 单
FET功能	逻辑电平门
FET类型	MOSFET N 通道，金属氧化物
品牌	Infineon Technologies
数据手册	http://www.infineon.com/dgdl/IPT004N03L_rev1.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433e9d5d11013e9e0f382600c2
产品图片
产品型号	IPT004N03LATMA1
rohs	不受无铅要求限制 / 符合限制有害物质指令(RoHS)规范要求
产品系列	OptiMOS™
不同Id时的Vgs(th)（最大值）	2.2V @ 250µA
不同Vds时的输入电容(Ciss)	24000pF @ 15V
不同Vgs时的栅极电荷(Qg)	163nC @ 4.5V
不同 Id、Vgs时的 RdsOn（最大值）	400毫欧 @ 150A， 10V
供应商器件封装	PG-HSOF-8-1
其它名称	IPT004N03LATMA1DKR
功率-最大值	300W
包装	Digi-Reel®
安装类型	表面贴装
封装/外壳	8-PowerDFN
标准包装	1
漏源极电压(Vdss)	30V
电流-连续漏极(Id)（25°C时）	300A （Tc）

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PDF Datasheet 数据手册内容提取

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,30V IPT004N03L DataSheet Rev.2.0 Final PowerManagement&Multimarket

HSOF OptiMOSTMPower-MOSFET,30V IPT004N03L 1Description Features •Optimizedfore-fuseandORingapplication Tab •Verylowon-resistanceR @V =4.5V DS(on) GS •100%avalanchetested •Superiorthermalresistance 1 2 •N-channel 345 6 •QualifiedaccordingtoJEDEC1)fortargetapplications 78 •Pb-freeleadplating;RoHScompliant Table1KeyPerformanceParameters Drain Parameter Value Unit Tab V 30 V DS R 0.4 mW Gate DS(on),max Pin 1 I 300 A D Source Q 141 nC Pin 2-8 OSS Q (0V..10V) 252 nC G Type/OrderingCode Package Marking RelatedLinks IPT004N03L PG-HSOF-8-1 004N03L - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-10-08

TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 OptiMOSTMPower-MOSFET,30V IPT004N03L Final Data Sheet 3 Rev.2.0,2014-10-08

2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings at 25 °C Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Continuous drain current ID ----- ----- 33337000020000 A VVVVVGGGGGSSSSS=====1144100..055VVVVV,,,,,TTTTTCCACC=====22121550500°°0°CC°C°C,CRthJA=40K/W1) Pulsed drain current2) ID,pulse - - 1200 A TC=25°C Avalanche energy, single pulse3) EAS - - 830 mJ ID=150A Gate source voltage VGS -20 - 20 V - Power dissipation Ptot -- -- 330.80 W TTCA==2255°°CC,RthJA=40K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C I5E5C/1 c5l0im/5a6tic category; DIN IEC 68-1: 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 0.5 K/W - Device on PCB RthJA -- -- 4602 K/W 6m icnmim² ucmoo floinogt parrineta1) OptiMOSTMPower-MOSFET,30V 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 23)) SSeeee ffiigguurree 31 3fo fro rm moroer ed edteatialeilde din ifnofromrmataiotinon IPT004N03L Final Data Sheet 4 Rev.2.0,2014-10-08

4Electricalcharacteristics Table4Staticcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 30 - - V VGS=0V,ID=10mA Gate threshold voltage VGS(th) 0.7 - 2.2 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS -- 01.01 11000 µA VVDDSS==3300VV,,VVGGSS==00VV,,TTjj==21525°C°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) -- 00..4347 00..54 mW VVGGSS==41.05VV,,IIDD==115500AA Gate resistance RG 1.4 2.7 5.4 W - Transconductance gfs 160 320 - S |VDS|>2|ID|RDS(on)max,ID=30A Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss - 18000 24000 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 5400 7200 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 590 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 30 - ns VRDGD,e=xt1=51.V6,WVGS=10V,ID=30A, Rise time tr - 17 - ns VRDGD,e=xt1=51.V6,WVGS=10V,ID=30A, Turn-off delay time td(off) - 149 - ns VRDGD,e=xt1=51.V6,WVGS=10V,ID=30A, Fall time tf - 37 - ns VRDGD,e=xt1=51.V6,WVGS=10V,ID=30A, Table6Gatechargecharacteristics1) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs - 40 53 nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 29 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 28 36 nC VDD=15V,ID=30A,VGS=0to4.5V Switching charge Qsw - 38 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 122 163 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.2 - V VDD=15V,ID=30A,VGS=0to4.5V OptiMOSTMPower-MOSFET,30V Gate charge total Qg - 252 336 nC VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 105 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 141 188 nC VDD=15V,VGS=0V 1) See †Gate charge waveforms† for parameter definition IPT004N03L Final Data Sheet 5 Rev.2.0,2014-10-08

Table7Reversediode Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode continuous forward current IS - - 300 A TC=25°C Diode pulse current IS,pulse - - 1200 A TC=25°C Diode forward voltage VSD - 0.83 1 V VGS=0V,IF=150A,Tj=25°C Reverse recovery charge Qrr - 100 - nC VR=15V,IF=100A,diF/dt=400A/µs OptiMOSTMPower-MOSFET,30V IPT004N03L Final Data Sheet 6 Rev.2.0,2014-10-08

5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation W] P[tot TC[°C] OptiMOSTMPower-MOSFET,30V IPT004N03L Diagram2:Draincurrent 350 350 300 300 250 250 200 200 A] [D I 150 150 100 100 50 50 0 0 0 40 80 120 160 200 0 40 80 120 160 200 T [°C] C P =f(T ) I =f(T );V ‡ 10V tot C D C GS Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 104 101 1 µs 103 10 µs 100 100 µs 1 ms 102 10 ms W] 0.5 I[A]D DC [K/hJC 10-1 00.1.2 101 Zt 0.05 0.02 10-2 100 0.01 single pulse 10-1 10-3 10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100 V [V] t [s] DS p I =f(V );T =25°C;D=0;parameter:t Z =f(t );parameter:D=t /T D DS C p thJC p p Final Data Sheet 7 Rev.2.0,2014-10-08

Diagram5:Typ.outputcharacteristics I[A]D VDS[V] OptiMOSTMPower-MOSFET,30V IPT004N03L Diagram6:Typ.drain-sourceonresistance 1200 0.6 10 V 3.2 V 4.5 V 4 V 3.5 V 1000 5 V 3.2 V 0.5 3.5 V 4 V 4.5 V 5 V 800 0.4 7 V 8 V 10 V 3 V ] Wm 600 [n) 0.3 o S( D 2.8 V R 400 0.2 200 0.1 0 0.0 0 1 2 3 0 100 200 300 400 500 600 700 I [A] D I =f(V );T=25°C;parameter:V R =f(I );T=25°C;parameter:V D DS j GS DS(on) D j GS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 1200 800 700 1000 600 800 500 A] S] I[D 600 g[fs 400 300 400 200 175 °C 25 °C 200 100 0 0 0 1 2 3 4 5 0 40 80 120 160 V [V] I [A] GS D I =f(V );|V |>2|I |R ;parameter:T g =f(I );T=25°C D GS DS D DS(on)max j fs D j Final Data Sheet 8 Rev.2.0,2014-10-08

Diagram9:Drain-sourceon-stateresistance ] Wm R[DS(on) Tj[°C] OptiMOSTMPower-MOSFET,30V IPT004N03L Diagram10:Typ.gatethresholdvoltage 1.0 2.5 0.8 2.0 0.6 1.5 1 mA V] [h) S(t G 0.4 typ V 1.0 0.2 0.5 0.0 0.0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T[°C] j R =f(T);I =150A;V =10V V =f(T);V =V ;I =1mA DS(on) j D GS GS(th) j GS DS D Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 105 104 103 Ciss 104 C[pF] Coss I[A]F 102 25 °C 103 175 °C 101 Crss 102 100 0 5 10 15 20 25 0.0 0.5 1.0 1.5 V [V] V [V] DS SD C=f(V );V =0V;f=1MHz I =f(V );parameter:T DS GS F SD j Final Data Sheet 9 Rev.2.0,2014-10-08

Diagram13:Avalanchecharacteristics I[A]AV tAV[µs] OptiMOSTMPower-MOSFET,30V IPT004N03L Diagram14:Typ.gatecharge 103 12 15 V 10 6 V 24 V 102 25 °C 8 100 °C 125 °C V] [S 6 G V 101 4 2 100 0 100 101 102 103 0 50 100 150 200 250 300 Q [nC] gate I =f(t );R =25W ;parameter:T V =f(Q );I =30Apulsed;parameter:V AS AV GS j(start) GS gate D DD Diagram15:Drain-sourcebreakdownvoltage 34 32 30 28 V] [S) S D R( 26 B V 24 22 20 -60 -20 20 60 100 140 180 T[°C] j V =f(T);I =10mA BR(DSS) j D Final Data Sheet 10 Rev.2.0,2014-10-08

6PackageOutlines OptiMOSTMPower-MOSFET,30V IPT004N03L 1)partiallycoveredwithMoldFlash MILLIMETERS INCHES DIM MIN MAX MIN MAX DOCUMENTNO. A 2.20 2.40 0.087 0.094 Z8B00169619 b 0.70 0.90 0.028 0.035 b1 9.70 9.90 0.382 0.390 b2 0.42 0.50 0.017 0.020 SCALE 0 c 0.40 0.60 0.016 0.024 D 10.28 10.58 0.405 0.416 2 D2 3.30 0.130 E 9.70 10.10 0.382 0.398 0 2 E1 7.50 0.295 E4 8.50 0.335 4mm E5 9.46 0.372 e 1.20(BSC) 0.047(BSC) EUROPEANPROJECTION H 11.48 11.88 0.452 0.468 H1 6.55 6.75 0.258 0.266 H2 7.15 0.281 H3 3.59 0.141 H4 3.26 0.128 N 8 8 K1 4.18 0.165 ISSUEDATE L 1.60 2.10 0.063 0.083 20-02-2014 L1 0.70 0.028 REVISION L2 0.60 0.024 02 L4 1.00 1.30 0.039 0.051 Figure1OutlinePG-HSOF-8-1 Final Data Sheet 11 Rev.2.0,2014-10-08

RevisionHistory IPT004N03L Revision:2014-10-08,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-10-08 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. OptiMOSTMPower-MOSFET,30V IPT004N03L Final Data Sheet 12 Rev.2.0,2014-10-08

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