MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,30V IPT004N03L DataSheet Rev.2.0 Final PowerManagement&Multimarket

HSOF OptiMOSTMPower-MOSFET,30V IPT004N03L 1Description Features •Optimizedfore-fuseandORingapplication Tab •Verylowon-resistanceR @V =4.5V DS(on) GS •100%avalanchetested •Superiorthermalresistance 1 2 •N-channel 345 6 •QualifiedaccordingtoJEDEC1)fortargetapplications 78 •Pb-freeleadplating;RoHScompliant Table1KeyPerformanceParameters Drain Parameter Value Unit Tab V 30 V DS R 0.4 mW Gate DS(on),max Pin 1 I 300 A D Source Q 141 nC Pin 2-8 OSS Q (0V..10V) 252 nC G Type/OrderingCode Package Marking RelatedLinks IPT004N03L PG-HSOF-8-1 004N03L - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-10-08

TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 OptiMOSTMPower-MOSFET,30V IPT004N03L Final Data Sheet 3 Rev.2.0,2014-10-08

2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings at 25 °C Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Continuous drain current ID ----- ----- 33337000020000 A VVVVVGGGGGSSSSS=====1144100..055VVVVV,,,,,TTTTTCCACC=====22121550500°°0°CC°C°C,CRthJA=40K/W1) Pulsed drain current2) ID,pulse - - 1200 A TC=25°C Avalanche energy, single pulse3) EAS - - 830 mJ ID=150A Gate source voltage VGS -20 - 20 V - Power dissipation Ptot -- -- 330.80 W TTCA==2255°°CC,RthJA=40K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C I5E5C/1 c5l0im/5a6tic category; DIN IEC 68-1: 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 0.5 K/W - Device on PCB RthJA -- -- 4602 K/W 6m icnmim² ucmoo floinogt parrineta1) OptiMOSTMPower-MOSFET,30V 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 23)) SSeeee ffiigguurree 31 3fo fro rm moroer ed edteatialeilde din ifnofromrmataiotinon IPT004N03L Final Data Sheet 4 Rev.2.0,2014-10-08

4Electricalcharacteristics Table4Staticcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 30 - - V VGS=0V,ID=10mA Gate threshold voltage VGS(th) 0.7 - 2.2 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS -- 01.01 11000 µA VVDDSS==3300VV,,VVGGSS==00VV,,TTjj==21525°C°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) -- 00..4347 00..54 mW VVGGSS==41.05VV,,IIDD==115500AA Gate resistance RG 1.4 2.7 5.4 W - Transconductance gfs 160 320 - S |VDS|>2|ID|RDS(on)max,ID=30A Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss - 18000 24000 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 5400 7200 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 590 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 30 - ns VRDGD,e=xt1=51.V6,WVGS=10V,ID=30A, Rise time tr - 17 - ns VRDGD,e=xt1=51.V6,WVGS=10V,ID=30A, Turn-off delay time td(off) - 149 - ns VRDGD,e=xt1=51.V6,WVGS=10V,ID=30A, Fall time tf - 37 - ns VRDGD,e=xt1=51.V6,WVGS=10V,ID=30A, Table6Gatechargecharacteristics1) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs - 40 53 nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 29 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 28 36 nC VDD=15V,ID=30A,VGS=0to4.5V Switching charge Qsw - 38 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 122 163 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.2 - V VDD=15V,ID=30A,VGS=0to4.5V OptiMOSTMPower-MOSFET,30V Gate charge total Qg - 252 336 nC VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 105 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 141 188 nC VDD=15V,VGS=0V 1) See †Gate charge waveforms† for parameter definition IPT004N03L Final Data Sheet 5 Rev.2.0,2014-10-08

Table7Reversediode Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode continuous forward current IS - - 300 A TC=25°C Diode pulse current IS,pulse - - 1200 A TC=25°C Diode forward voltage VSD - 0.83 1 V VGS=0V,IF=150A,Tj=25°C Reverse recovery charge Qrr - 100 - nC VR=15V,IF=100A,diF/dt=400A/µs OptiMOSTMPower-MOSFET,30V IPT004N03L Final Data Sheet 6 Rev.2.0,2014-10-08

5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation W] P[tot TC[°C] OptiMOSTMPower-MOSFET,30V IPT004N03L Diagram2:Draincurrent 350 350 300 300 250 250 200 200 A] [D I 150 150 100 100 50 50 0 0 0 40 80 120 160 200 0 40 80 120 160 200 T [°C] C P =f(T ) I =f(T );V ‡ 10V tot C D C GS Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 104 101 1 µs 103 10 µs 100 100 µs 1 ms 102 10 ms W] 0.5 I[A]D DC [K/hJC 10-1 00.1.2 101 Zt 0.05 0.02 10-2 100 0.01 single pulse 10-1 10-3 10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100 V [V] t [s] DS p I =f(V );T =25°C;D=0;parameter:t Z =f(t );parameter:D=t /T D DS C p thJC p p Final Data Sheet 7 Rev.2.0,2014-10-08

Diagram5:Typ.outputcharacteristics I[A]D VDS[V] OptiMOSTMPower-MOSFET,30V IPT004N03L Diagram6:Typ.drain-sourceonresistance 1200 0.6 10 V 3.2 V 4.5 V 4 V 3.5 V 1000 5 V 3.2 V 0.5 3.5 V 4 V 4.5 V 5 V 800 0.4 7 V 8 V 10 V 3 V ] Wm 600 [n) 0.3 o S( D 2.8 V R 400 0.2 200 0.1 0 0.0 0 1 2 3 0 100 200 300 400 500 600 700 I [A] D I =f(V );T=25°C;parameter:V R =f(I );T=25°C;parameter:V D DS j GS DS(on) D j GS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 1200 800 700 1000 600 800 500 A] S] I[D 600 g[fs 400 300 400 200 175 °C 25 °C 200 100 0 0 0 1 2 3 4 5 0 40 80 120 160 V [V] I [A] GS D I =f(V );|V |>2|I |R ;parameter:T g =f(I );T=25°C D GS DS D DS(on)max j fs D j Final Data Sheet 8 Rev.2.0,2014-10-08

Diagram9:Drain-sourceon-stateresistance ] Wm R[DS(on) Tj[°C] OptiMOSTMPower-MOSFET,30V IPT004N03L Diagram10:Typ.gatethresholdvoltage 1.0 2.5 0.8 2.0 0.6 1.5 1 mA V] [h) S(t G 0.4 typ V 1.0 0.2 0.5 0.0 0.0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T[°C] j R =f(T);I =150A;V =10V V =f(T);V =V ;I =1mA DS(on) j D GS GS(th) j GS DS D Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 105 104 103 Ciss 104 C[pF] Coss I[A]F 102 25 °C 103 175 °C 101 Crss 102 100 0 5 10 15 20 25 0.0 0.5 1.0 1.5 V [V] V [V] DS SD C=f(V );V =0V;f=1MHz I =f(V );parameter:T DS GS F SD j Final Data Sheet 9 Rev.2.0,2014-10-08

Diagram13:Avalanchecharacteristics I[A]AV tAV[µs] OptiMOSTMPower-MOSFET,30V IPT004N03L Diagram14:Typ.gatecharge 103 12 15 V 10 6 V 24 V 102 25 °C 8 100 °C 125 °C V] [S 6 G V 101 4 2 100 0 100 101 102 103 0 50 100 150 200 250 300 Q [nC] gate I =f(t );R =25W ;parameter:T V =f(Q );I =30Apulsed;parameter:V AS AV GS j(start) GS gate D DD Diagram15:Drain-sourcebreakdownvoltage 34 32 30 28 V] [S) S D R( 26 B V 24 22 20 -60 -20 20 60 100 140 180 T[°C] j V =f(T);I =10mA BR(DSS) j D Final Data Sheet 10 Rev.2.0,2014-10-08

6PackageOutlines OptiMOSTMPower-MOSFET,30V IPT004N03L 1)partiallycoveredwithMoldFlash MILLIMETERS INCHES DIM MIN MAX MIN MAX DOCUMENTNO. A 2.20 2.40 0.087 0.094 Z8B00169619 b 0.70 0.90 0.028 0.035 b1 9.70 9.90 0.382 0.390 b2 0.42 0.50 0.017 0.020 SCALE 0 c 0.40 0.60 0.016 0.024 D 10.28 10.58 0.405 0.416 2 D2 3.30 0.130 E 9.70 10.10 0.382 0.398 0 2 E1 7.50 0.295 E4 8.50 0.335 4mm E5 9.46 0.372 e 1.20(BSC) 0.047(BSC) EUROPEANPROJECTION H 11.48 11.88 0.452 0.468 H1 6.55 6.75 0.258 0.266 H2 7.15 0.281 H3 3.59 0.141 H4 3.26 0.128 N 8 8 K1 4.18 0.165 ISSUEDATE L 1.60 2.10 0.063 0.083 20-02-2014 L1 0.70 0.028 REVISION L2 0.60 0.024 02 L4 1.00 1.30 0.039 0.051 Figure1OutlinePG-HSOF-8-1 Final Data Sheet 11 Rev.2.0,2014-10-08

RevisionHistory IPT004N03L Revision:2014-10-08,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-10-08 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. OptiMOSTMPower-MOSFET,30V IPT004N03L Final Data Sheet 12 Rev.2.0,2014-10-08

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