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F D December 2000 S 3 5 8 0 FDS3580  80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically • 7.6 A, 80 V. R = 0.029 Ω @ V = 10 V DS(ON) GS to improve the overall efficiency of DC/DC converters using R = 0.033 Ω @ V = 6 V. either synchronous or conventional switching PWM DS(ON) GS controllers. • Low gate charge (34nC typical). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R • Fast switching speed. DS(ON) specifications. • High performance trench technology for extremely low R . The result is a MOSFET that is easy and safer to drive DS(ON) (even at very high frequencies), and DC/DC power supply • High power and current handling capability. designs with higher overall efficiency. D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 80 V DSS V Gate-Source Voltage ±20 V GSS ID Drain Current - Continuous (Note 1a) 7.6 A - Pulsed 50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 T, T Operating and Storage Junction Temperature Range -55 to +150 °C J stg Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS3580 FDS3580 13’’ 12mm 2500 units 2000 Fairchild Semiconductor International FDS3580 Rev. C

F D Electrical Characteristics T = 25°C unless otherwise noted S A 3 Symbol Parameter Test Conditions Min Typ Max Units 5 8 0 Drain-Source Avalanche Ratings (Note 2) W Single Pulse Drain-Source V = 40 V, I = 7.6 A 245 mJ DSS DD D Avalanche Energy I Maximum Drain-Source Avalanche Current 7.6 A AR Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 80 V ∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C 81 mV/°C ∆T Coefficient J IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 µA I Gate-Body Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate-Body Leakage, Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 2.5 4 V ∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C -7 mV/°C ∆T Temperature Coefficient J R Static Drain-Source V = 10 V, I = 7.6 A 0.022 0.029 Ω DS(on) GS D On-Resistance V = 10 V, I = 7.6 A, T=125°C 0.037 0.055 GS D J V = 6 V, I = 7 A 0.024 0.033 GS D I On-State Drain Current V = 10 V, V = 5 V 30 A D(on) GS DS g Forward Transconductance V = 5 V, I = 7.6 A 28 S FS DS D Dynamic Characteristics C Input Capacitance V = 25 V, V = 0 V, 1800 pF iss DS GS f = 1.0 MHz C Output Capacitance 180 pF oss C Reverse Transfer Capacitance 90 pF rss Switching Characteristics (Note 2) t Turn-On Delay Time V = 40 V, I = 1 A, 13 26 ns d(on) DD D Ω tr Turn-On Rise Time VGS = 10 V, RGEN = 6 8 20 ns t Turn-Off Delay Time 34 60 ns d(off) t Turn-Off Fall Time 16 30 ns f Q Total Gate Charge V = 40 V, I = 7.6 A, 34 46 nC g DS D V = 10 V Q Gate-Source Charge GS 6.1 nC gs Q Gate-Drain Charge 6.9 nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current 2.1 A S VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50° C/W when b) 105° C/W when c) 125° C/W when mounted on a 1 in2 mounted on a 0.04 in2 mounted on a minimum pad of 2 oz. copper. pad of 2 oz. copper. pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDS3580 Rev. C

F D Typical Characteristics S 3 5 8 60 VGS = 10V E 2 0 50 6.0V 5.0V NC1.8 RRENT (A) 40 4.5V MALIZEDN-RESISTA1.6 VGS = 4.0V I, DRAIN CUD123000 4.0V R, NORDS(ON)AIN-SOURCE O11..124 4.5V 5.0V 6.0V 7.0V 10V R 3.5V D 0 0.8 0 1 2 3 4 5 0 10 20 30 40 50 60 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 0.06 ANCE1.8 VIDG S= =7 .160AV HM) 0.05 ID = 3.8A ORMALIZEDE ON-RESIST111...246 SISTANCE (O 00..0034 TA = 125oC NC E R, DS(ON)DRAIN-SOUR00..681 R, ON-RDS(ON)00..0012 TA = 25oC 0.4 0 -50 -25 0 25 50 75 100 125 150 3 4 5 6 7 8 9 10 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Temperature. with Gate-to-Source Voltage. 60 100 VDS = 5V TA = -55oC 25oC A) VGS = 0V 50 T ( 10 A) 125oC EN RRENT ( 40 N CURR 1 TA = 125oC 25oC AIN CU 30 E DRAI 0.1 -55oC I, DRD20 EVERS 0.01 10 R 0.001 I, S 0 0.0001 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS3580 Rev. C

F D Typical Characteristics S (continued) 3 5 8 10 2400 0 GE (V) 8 ID = 7.6A VDS = 10V 40V20V 2000 Vf G=S 1 =M 0H Vz VOLTA 6 E (pF)1600 CISS SOURCE 4 ACITANC1200 ATE- CAP 800 V, GGS 2 400 COSS CRSS 0 0 0 5 10 15 20 25 30 35 0 10 20 30 40 50 60 70 80 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 T (A) 10 RDS(ON) LIMIT 10m1sms100µs 40 SRINθ J TGA A =L =1E 22 P55°U°CCL/SWE N RE 100ms W)30 I, DRAIN CURD 0.11 SRIθNJVAG G=LS E1= 2 P15U0oCVL/SWE DC10s1s POWER (1200 TA = 25oC 0.01 0 0.1 1 10 100 0.001 0.01 0.1 1 10 100 300 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. E 1 D EFFECTIVEMAL RESISTANC 0.0000...5125 D = 0 . 50. 2 0 .1 0 .05 P(p k )R θ R J A θ J ( tA ) = = 1r(2t)5 °*C R/ W θ J A r(t), NORMALIZERANSI ENT THER 0000..00..00001225 0.02 0 .01 S i n g le P u l s e D uT tJ -y T t A1 C =ty 2 P c l* e R, θD J A = (t )t1 /t2 T 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t 1 , TIM E (se c) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDS3580 Rev. C

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FASTr™ PowerTrench SyncFET™ Bottomless™ GlobalOptoisolator™ QFET™ TinyLogic™ CoolFET™ GTO™ QS™ UHC™ CROSSVOLT™ HiSeC™ QT Optoelectronics™ VCX™ DOME™ ISOPLANAR™ Quiet Series™ E2CMOSTM MICROWIRE™ SILENT SWITCHER EnSignaTM OPTOLOGIC™ SMART START™ FACT™ OPTOPLANAR™ SuperSOT™-3 FACT Quiet Series™ PACMAN™ SuperSOT™-6 FAST POP™ SuperSOT™-8 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G

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