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November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect 5 A, 30 V. R = 0.035 W @ V = 10 V DS(ON) GS transistors is produced using Fairchild's proprietary, high cell R = 0.055 W @ V = 4.5 V. DS(ON) GS density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are Proprietary SuperSOTTM-6 package design using copper particularly suited for low voltage applications in notebook lead frame for superior thermal and electrical capabilities. computers, portable phones, PCMICA cards, and other High density cell design for extremely low R . battery powered circuits where fast switching, and low in-line DS(ON) power loss are needed in a very small outline surface mount Exceptional on-resistance and maximum DC current package. capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D 1 6 D 3 5 6 . 2 5 G D SuperSOT T M -6 pin1 D 33 4 Absolute Maximum Ratings T = 25°C unless otherwise note A Symbol Parameter FDC653N Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage - Continuous ±20 V GSS ID Drain Current - Continuous (Note 1a) 5 A - Pulsed 15 PD Maximum Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 T,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RqJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W © 1997 Fairchild Semiconductor Corporation FDC653N Rev.C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage V = 0 V, I = 250 µA 30 V DSS GS D D BV /D T Breakdown Voltage Temp. Coefficient I = 250 µA, Referenced to 25 o C 31 mV /oC DSS J D I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 µA DSS DS GS T = 55oC 10 µA J I Gate - Body Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V = V , I = 250 µA 1 1.7 2 V GS(th) DS GS D D V /D T Gate Threshold VoltageTemp.Coefficient I = 250 µA, Referenced to 25 o C -4.2 mV /oC GS(th) J D R Static Drain-Source On-Resistance V = 10 V, I = 5 A 0.027 0.035 W DS(ON) GS D T = 125oC 0.042 0.056 J V = 4.5 V, I = 4.2 A 0.046 0.055 GS D I On-State Drain Current V = 10 V, V = 5 V 8 A D(on) GS DS g Forward Transconductance V = 10 V, I= 5 A 6.2 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 15 V, V = 0 V, 350 pF iss DS GS C Output Capacitance f = 1.0 MHz 220 pF oss C Reverse Transfer Capacitance 80 pF rss SWITCHING CHARACTERISTICS (Note 2) t Turn - On Delay Time V = 10 V, I = 1 A, 7.5 15 ns D(on) DD D t Turn - On Rise Time V = 4.5 V, R = 6 W 12 25 ns r GS GEN t Turn - Off Delay Time 13 25 ns D(off) t Turn - Off Fall Time 6 15 ns f Q Total Gate Charge V = 15 V, I = 5 A, 12 17 nC g DS D Q Gate-Source Charge V = 10 V 2.1 nC gs GS Q Gate-Drain Charge 2.6 nC gd DRAIN-SOURCE DIODE CHARACTERISTICS I Continuous Source Diode Current 1.3 A S VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.75 1.2 V T = 125oC 0.6 1 J Notes: 1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design. a. 78oC/W when mounted on a minimum on a 1 in2 pad of 2oz Cu in FR-4 board. b. 156oC/W when mounted on a minimum pad of 2oz Cu in FR-4 board. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDC653N Rev.C

Typical Electrical Characteristics 15 3.5 E CURRENT (A)129 VG S = 10V 6.05.0 4.5 4.0 ORMALIZED N-RESISTANCE2.53 VG S =3.5V 4.0 C N O RAIN-SOUR 6 3.5 R , DS(ON)N-SOURCE 1.52 4.5 5.0 6.0 I , DD 3 3.0 DRAI 1 10 0 0.5 0 0.5 1 1.5 2 0 3 6 9 12 15 V D S , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 0.18 ED TANCE1.6 VI D G S= =5 .100AV OHM) 0.15 I D =2A R , NORMALIZDS(ON)DRAIN-SOURCE ON-RESIS011...8241 R , ON-RESISTANCE (DS(ON) 0000....00013692 TA = 25°C TA = 125°C 0 0.6 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 V , GATE TO SOURCE VOLTAGE (V) T , JUNCTION TEMPERATURE (°C) GS J Figure 3. On-Resistance Variation Figure 4. On Resistance Variation with with Temperature. Gate-To- Source Voltage. 15 V D S = 5V A) 15 VG S =0V T ( T (A)12 RREN 1 TA = 125°C N U CURRE 9 TA = -55°C RAIN C 0.1 25°C I , DRAIN D 36 125°C 25°C REVERSE D 0.00.0011 -55°C I , S 0 0.0001 1.5 2 2.5 3 3.5 4 4.5 0 0.2 0.4 0.6 0.8 1 1.2 VG S , GATE TO SOURCE VOLTAGE (V) V S D , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC653N Rev.B

Typical Electrical And Thermal Characteristics 1000 10 E (V) I D = 5.0A V D S = 5V G 8 500 OURCE VOLTA 6 15V 10V CITANCE (pF) 200 CCio s sss S 4 A ATE- CAP V , GGS 2 100 fV = G S1 =M 0HVz Cr s s 0 50 0 2 4 6 8 10 12 14 0.1 0.3 1 3 10 30 Q g , GATE CHARGE (nC) V , DRAIN TO SOURCE VOLTAGE (V) DS Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 30 5 T (A) 103 RDS(ON) LIMIT 1ms100us 4 RSq IJ NA G=SLeEe P nUoLteS E1b I , DRAIN CURREND 00..131 RSq J IA N V=GG SSL Ee =e P 1NU0oVLtSe E1b D C1s 10100mmss POWER (W)123 TA = 25°C 0.03 T A = 25°C 0.01 0 0.1 0.2 0.5 1 2 5 10 30 50 0.01 0.1 1 10 100 300 V D S , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 E C EAN 0.5 D = 0.5 VT CTISIS Rq J A (t) = r(t) * R q J A r(t), NORMALIZED EFFERANSIENT THERMAL RE0000..00..1225 0 0. 020 ..1S0 .0 0 .i50n2 1g le Pulse P(pk)DT J u R-t yT q t 1C A J A y t =c 2l = e P ,S De* eR= N t q oJ 1 tA /e (t t1)2b T 0.01 0.0001 0.001 0.01 0.1 1 10 100 300 t 1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal response will change depending on the circuit board design. FDC653N Rev.B

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