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F C P 1 9 December 2014 0 N 6 FCP190N60 / FCPF190N60 0 / ® F N-Channel SuperFET II MOSFET C P F 600 V, 20.2 A, 199 mΩ 1 9 0 Features Description N 6 • 650 V @ T = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new 0 J high voltage super-junction (SJ) MOSFET family that is utilizing — • Typ. R = 170 mΩ DS(on) charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Q = 57 nC) N g and lower gate charge performance. This technology is tailored - • Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF) to minimize conduction loss, provide superior switching perfor- Ch • 100% Avalanche Tested mance, dv/dt rate and higher avalanche energy. Consequently, a SuperFET II MOSFET is very suitable for the switching power n • RoHS Compliant n applications such as PFC, server/telecom power, FPD TV e Applications power, ATX power and industrial power applications. l S • LCD / LED / PDP TV Lighting u p • Solar Inverter e r • AC-DC Power Supply F E T D ® I I M O S F G E G D G T S TO-220 DS TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FCP190N60 FCPF190N60 Unit V Drain to Source Voltage 600 V DSS - DC ±20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) ±30 - Continuous (T = 25oC) 20.2 20.2* I Drain Current C A D - Continuous (T = 100oC) 12.7 12.7* C I Drain Current - Pulsed (Note 1) 60.6 60.6* A DM E Single Pulsed Avalanche Energy (Note 2) 400 mJ AS I Avalanche Current (Note 1) 4.0 A AR E Repetitive Avalanche Energy (Note 1) 2.1 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 (T = 25oC) 208 39 W P Power Dissipation C D - Derate Above 25oC 1.67 0.31 W/oC T , T Operating and Storage Temperature Range -55 to +150 oC J STG T Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC L *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP190N60 FCPF190N60 Unit R Thermal Resistance, Junction to Case, Max. 0.6 3.2 θJC oC/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 θJA ©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCP190N60 / FCPF190N60 Rev. C18

F C Package Marking and Ordering Information P 1 9 Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 0 FCP190N60 FCP190N60 TO-220 Tube N/A N/A 50 units N 6 FCPF190N60 FCPF190N60 TO-220F Tube N/A N/A 50 units 0 / Electrical Characteristics T = 25oC unless otherwise noted. F C C P Symbol Parameter Test Conditions Min. Typ. Max. Unit F 1 Off Characteristics 9 0 N V = 0 V, I = 10 mA, T = 25°C 600 - - BV Drain to Source Breakdown Voltage GS D J V 6 DSS V = 0 V, I = 10 mA, T = 150°C 650 - - 0 GS D J ΔBV Breakdown Voltage Temperature — DSS I = 10 mA, Referenced to 25oC - 0.67 - V/oC / ΔTJ Coefficient D N Drain to Source Avalanche Breakdown - BVDS Voltage VGS = 0 V, ID = 20 A - 700 - V C h V = 600 V, V = 0 V - - 1 a I Zero Gate Voltage Drain Current DS GS μA n DSS VDS = 480 V, TC = 125oC - 1.3 - n I Gate to Body Leakage Current V = ±20 V, V = 0 V - - ±100 nA e GSS GS DS l S On Characteristics u p V Gate Threshold Voltage V = V , I = 250 μA 2.5 - 3.5 V e GS(th) GS DS D r RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 10 A - 0.17 0.199 Ω FE gFS Forward Transconductance VDS = 20 V, ID = 10 A - 21 - S T ® Dynamic Characteristics II M C Input Capacitance - 2220 2950 pF iss V = 25 V, V = 0 V O Coss Output Capacitance f =D S1 MHz GS - 1630 2165 pF S C Reverse Transfer Capacitance - 85 128 pF F rss E Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 42 - pF T C Effective Output Capacitance V = 0 V to 480 V, V = 0 V - 160 - pF oss(eff.) DS GS Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 10 A, - 57 74 nC Q Gate to Source Gate Charge V = 10 V - 9 - nC gs GS Q Gate to Drain “Miller” Charge (Note 4) - 21 - nC gd ESR Equivalent Series Resistance f = 1 MHz - 1 - Ω Switching Characteristics t Turn-On Delay Time - 20 50 ns d(on) tr Turn-On Rise Time VDD = 380 V, ID = 10 A, - 10 30 ns V = 10 V, R = 4.7 Ω t Turn-Off Delay Time GS G - 64 138 ns d(off) tf Turn-Off Fall Time (Note 4) - 5 20 ns Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 20.2 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 60.6 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 10 A - - 1.2 V SD GS SD trr Reverse Recovery Time VGS = 0 V, ISD = 10 A, - 320 - ns Qrr Reverse Recovery Charge dIF/dt = 100 A/μs - 5.1 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FCP190N60 / FCPF190N60 Rev. C18

F C Typical Performance Characteristics P 1 9 0 N Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 0 50 100 / VGS = 15.0V *Notes: F 10.0V 1. VDS = 20V C 8.0V 2. 250μs Pulse Test P 7.0V F ain Current[A] 10 6554....0505VVVV ain Current[A] 10 150oC 25oC 190N60 — Dr Dr , D , D -55oC N I 1 I - *Notes: C 1. 250μs Pulse Test h 2. TC = 25oC an 0.3 1 n 0.1 1 10 2 3 4 5 6 7 8 e VDS, Drain to Source Voltage[V] VGS, Gate to Source Voltage[V] l S u Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage p e Drain Current and Gate Voltage Variation vs. Source Current r F and Temperature E T 0.5 100 ® I I e M stanc0.4 nt [A] OS R [],ΩDS(ON)n to Source On-Resi00..23 VGS = 10V Reverse Drain Curre 10 150oC 25oC FET Drai VGS = 20V I, S *1N. oVtes := 0V GS 0.1 *Note: TC = 25oC 1 2. 250μs Pulse Test 0 10 20 30 40 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Body Diode Forward Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10000 10 Ciss 1000 oltage [V] 8 VVVDDDSSS === 134208000VVV F] V es [p 100 Coss urce 6 c o n S apacita 10 * N 1o. tVeG:S = 0V Gate to 4 C 2. f = 1MHz Crss , GS 2 Ciss = Cgs + Cgd (Cds = shorted) V Coss = Cds + Cgd 1 Crss = Cgd *Note: ID = 10A 0.5 0 0.1 1 10 100 600 0 20 40 60 VDS, Drain to Source Voltage [V] Qg, Total Gate Charge [nC] ©2012 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FCP190N60 / FCPF190N60 Rev. C18

F C Typical Performance Characteristics P (Continued) 1 9 0 N Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation 6 vs. Temperature vs. Temperature 0 / 1.2 3.0 F e C Voltag ance 2.5 PF1 malized] akdown 1.1 malized] n-Resist 2.0 90N6 BV, [NorDSSDrain to Source Bre 01..90 * N 1o. tVeGs:S = 0V R, [NorDS(on)Drain to Source O 011...505 * N 1o. tVeGs:S = 10V 0 — N-Chan 0.8 2. ID = 10mA 0.0 2. ID = 10A ne l -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 S TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] u p e Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area r F for FCP190N60 for FCPF190N60 E T 100 100 ® 10μs I 10μs I M 100μs nt [A] 10 10m1mss nt [A] 10 1m1s00μs OSF e e Curr DC Curr 10ms ET n 1 n 1 DC , DraiD Oisp Leirmatitioedn biny TRh DisS (Aonre)a , DraiD Oisp Leirmatitioedn biny TRh DisS (Aonre)a I I 0.1 *Notes: 0.1 *Notes: 1. TC = 25oC 1. TC = 25oC 2. TJ = 150oC 2. TJ = 150oC 3. Single Pulse 3. Single Pulse 0.01 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain to Source Voltage [V] VDS, Drain to Source Voltage [V] Figure 11. Maximum Drain Current Figure 12. Eoss vs. Drain to Source Voltage vs. Case Temperature 25 10 20 8 A] ain Current [ 1105 E, J[]μOSS 46 Dr , D I 5 2 0 0 25 50 75 100 125 150 0 100 200 300 400 500 600 TC, Case Temperature [oC] VDS, Drain to Source Voltage [V] ©2012 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FCP190N60 / FCPF190N60 Rev. C18

F C Typical Performance Characteristics P (Continued) 1 9 0 N Figure 13. Transient Thermal Response Curve for FCP190N60 6 0 / F 1 C W] P ose [C/Z]JCθ 0.5 F19 Thermal Responmal Response [ 0.1 000..0.125 *NoPtDeMs: t1t2 0N60 — N Z(t), JCθTher 00S..i00n21gle pulse 12.. ZDθuJtCy( tF) a=c 0to.6r,o CD/=W t 1M/t2ax. -Ch 3. TJM - TC = PDM * ZθJC(t) a 0.01 n 10-5 10-4 10-3 10-2 10-1 1 n e Rt1e, cRteacntganuglaurla Pr uPlusles eD Duuraratitoionn [[sseecc]] l S u Figure 14. Transient Thermal Response Curve for FCPF190N60 p e r F 5 E W] T® ose [C/Z]JCθ 1 0.5 II M one [ 0.2 O ps hermal Resal Respon 0.1 000..00.152 PDM t1t2 SFET (t), ThermC 0.01 * N 1o. tZeθsJ:C(t) = 3.2oC/W Max. ZTJθ Single pulse 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 10-5 10-4 10-3 10-2 10-1 1 10 100 tR1,e Rcteacntagnuglualra Pr Puulslsee D Duurraattiioonn [[sseecc]] ©2012 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FCP190N60 / FCPF190N60 Rev. C18

F C P 1 9 0 N 6 0 / F C P F 1 9 0 N 6 0 — N - C h IG = const. a n n e l S Figure 15. Gate Charge Test Circuit & Waveform u p e r F E T ® I I VVDDSS RRLL VVDDSS 9900%% MO S VVGGSS VVDDDD F RR E GG T 1100%% VV V1100GVVS DDUUTT GGSS tt tt tt dd((oonn)) rr dd((ooffff)) tt ff tt tt oonn ooffff Figure 16. Resistive Switching Test Circuit & Waveforms V GS Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FCP190N60 / FCPF190N60 Rev. C18

F C P 1 9 0 N 6 0 / F DDUUTT ++ C P F 1 VV 9 DDSS 0 N __ 6 0 — II N SSDD - LLL C h a n DDrriivveerr n e RRGG l S SSaammee TTyyppee u aass DDUUTT VVDDDD p e r VV F GGSS ••ddvv//ddttccoonnttrroolllleedd bbyy RR E GG T ••II ccoonnttrroolllleedd bbyy ppuullssee ppeerriioodd SSDD ® I I M O S F E T GGGaaattteee PPPuuulllssseee WWWiiidddttthhh VVGGSS DDD ===------GGG------aaa------ttt---eee------ PPP------uuu------lll---sss---eee------ ---PPP------eee------rrr---iiiooo------ddd--- 1100VV (( DDrriivveerr )) II ,, BBooddyy DDiiooddee FFoorrwwaarrdd CCuurrrreenntt FFMM II SSDD (( DDUUTT )) ddii//ddtt II RRMM BBooddyy DDiiooddee RReevveerrssee CCuurrrreenntt VV DDSS (( DDUUTT )) BBooddyy DDiiooddee RReeccoovveerryyddvv//ddtt VV VV SSDD DDDD BBooddyy DDiiooddee FFoorrwwaarrdd VVoollttaaggee DDrroopp Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com FCP190N60 / FCPF190N60 Rev. C18

SUPPLIER"B"PACKAGE SHAPE (cid:145)(cid:23)(cid:17)(cid:19)(cid:19) 3.50 10.67 SUPPLIER"A"PACKAGE 9.65 E SHAPE 3.40 2.50 16.30 IFPRESENT,SEENOTE"D" 13.90 E 16.51 9.40 15.42 8.13 E 1 2 3 2.46 4.10 C 2.70 14.04 2.13 12.70 2.06 FRONTVIEWS 4.70 1.62 1.62 4.00 1.42H 2.67 1.10 2.40 "A1" 8.65 1.00 SEENOTE"F" 7.59 0.55 (cid:24)(cid:131) (cid:24)(cid:131) OPTIONAL 6.69 (cid:22)(cid:131) (cid:22)(cid:131) 6.06 CHAMFER E 14.30 11.50 NOTE"I" BOTTOMVIEW NOTES: A)REFERENCEJEDEC,TO-220,VARIATIONAB B)ALLDIMENSIONSAREINMILLIMETERS. C)DIMENSIONSCOMMONTOALLPACKAGE SUPPLIERSEXCEPTWHERENOTED. 3 2 1 D)LOCATIONOFMOLDEDFEATUREMAYVARY (LOWERLEFTCORNER,LOWERCENTER ANDCENTEROFTHEPACKAGE) EDOESNOTCOMPLYJEDECSTANDARDVALUE. F)"A1"DIMENSIONSASBELOW: SINGLEGAUGE=0.51-0.61 DUALGAUGE=1.10-1.45 G)DRAWINGFILENAME:TO220B03REV9 HPRESENCEISSUPPLIERDEPENDENT I)SUPPLIERDEPENDENTMOLDLOCKINGHOLES INHEATSINK. 0.60 0.36 2.85 BACKVIEW 2.10 SIDEVIEW

10.36 2.66 A B B 9.96 2.42 3.28 3.40 7.00 3.08 0.70 3.20 SEE NOTE "F" SEE NOTE "F" 6.88 6.48 1 X 45° 16.07 B 15.67 16.00 15.60 (3.23) B 3 1 1.47 2.96 2.14 1.24 2.56 0.90 10.05 0.70 9.45 0.50 M A 30° 0.45 0.60 0.25 B 0.45 2.54 2.54 4.90 B 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. OPTION 1 - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5

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