图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: 2N7002BKM,315
  • 制造商: NXP Semiconductors
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

2N7002BKM,315产品简介:

ICGOO电子元器件商城为您提供2N7002BKM,315由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2N7002BKM,315价格参考。NXP Semiconductors2N7002BKM,315封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 60V 450mA(Ta) 360mW(Ta) DFN1006-3。您可以下载2N7002BKM,315参考资料、Datasheet数据手册功能说明书,资料中有2N7002BKM,315 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

MOSFET N-CH 60V 450MA SOT883MOSFET Single N-Channel 60V 300mA

产品分类

FET - 单分离式半导体

FET功能

逻辑电平门

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

450 mA

Id-连续漏极电流

450 mA

品牌

NXP Semiconductors

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,NXP Semiconductors 2N7002BKM,315-

数据手册

点击此处下载产品Datasheet

产品型号

2N7002BKM,315

PCN封装

点击此处下载产品Datasheet

Pd-PowerDissipation

0.83 W

Pd-功率耗散

830 mW

RdsOn-Drain-SourceResistance

2.8 Ohms

RdsOn-漏源导通电阻

2.8 Ohms

Vds-Drain-SourceBreakdownVoltage

60 V

Vds-漏源极击穿电压

60 V

不同Id时的Vgs(th)(最大值)

2.1V @ 250µA

不同Vds时的输入电容(Ciss)

50pF @ 10V

不同Vgs时的栅极电荷(Qg)

0.6nC @ 4.5V

不同 Id、Vgs时的 RdsOn(最大值)

1.6 欧姆 @ 500mA,10V

产品种类

MOSFET

供应商器件封装

SOT-883

其它名称

568-5976-1

功率-最大值

360mW

包装

剪切带 (CT)

商标

NXP Semiconductors

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

SC-101,SOT-883

封装/箱体

SOT-23-3

工厂包装数量

10000

晶体管极性

N-Channel

标准包装

1

漏源极电压(Vdss)

60V

电流-连续漏极(Id)(25°C时)

450mA (Ta)

配置

Single

推荐商品

型号:SUP90P06-09L-E3

品牌:Vishay Siliconix

产品名称:分立半导体产品

获取报价

型号:AUIRF3205ZSTRL

品牌:Infineon Technologies

产品名称:分立半导体产品

获取报价

型号:IRF3711ZSTRLPBF

品牌:Infineon Technologies

产品名称:分立半导体产品

获取报价

型号:DMN62D1LFD-7

品牌:Diodes Incorporated

产品名称:分立半导体产品

获取报价

型号:IRFPS3810PBF

品牌:Infineon Technologies

产品名称:分立半导体产品

获取报价

型号:DMP4015SPS-13

品牌:Diodes Incorporated

产品名称:分立半导体产品

获取报价

型号:CSD16409Q3

品牌:Texas Instruments

产品名称:分立半导体产品

获取报价

型号:PSMN2R0-30YLE,115

品牌:Nexperia USA Inc.

产品名称:分立半导体产品

获取报价

样品试用

万种样品免费试用

去申请
2N7002BKM,315 相关产品

PSMN7R6-60PS,127

品牌:Nexperia USA Inc.

价格:¥4.82-¥9.95

IXTA170N075T2

品牌:IXYS

价格:

FQA16N25C

品牌:ON Semiconductor

价格:

PSMN059-150Y,115

品牌:Nexperia USA Inc.

价格:

SI7456CDP-T1-GE3

品牌:Vishay Siliconix

价格:¥6.54-¥12.85

TK65G10N1,RQ

品牌:Toshiba Semiconductor and Storage

价格:

FQPF19N20T

品牌:ON Semiconductor

价格:

IXFN170N30P

品牌:IXYS

价格:

PDF Datasheet 数据手册内容提取

2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor(FET) in a leadless ultra small SOT883(SC-101) Surface-Mounted Device(SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits (cid:132) Logic-level compatible (cid:132) Very fast switching (cid:132) Trench MOSFET technology (cid:132) ESD protection up to 2kV (cid:132) AEC-Q101 qualified 1.3 Applications (cid:132) Relay driver (cid:132) High-speed line driver (cid:132) Low-side loadswitch (cid:132) Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T =25°C - - 60 V DS amb V gate-source voltage T =25°C - - ±20 V GS amb I drain current T =25°C; [1] - - 450 mA D amb V =10V GS R drain-source on-state T =25°C; [2] - 1 1.6 Ω DSon j resistance V =10V; GS I =500mA D [1] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad fordrain 1cm2. [2] Pulse test: tp≤300μs; δ≤0.01.

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 2 S source 1 3 3 D drain 2 Transparent G top view S 017aaa000 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002BKM SC-101 leadless ultra small plastic package; 3solder lands; SOT883 body1.0×0.6×0.5mm 4. Marking Table 4. Marking codes Type number Marking code 2N7002BKM Z8 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25°C - 60 V DS amb V gate-source voltage T =25°C - ±20 V GS amb I drain current V =10V [1] D GS T =25°C - 450 mA amb T =100°C - 220 mA amb I peak drain current T =25°C; - 1.2 A DM amb singlepulse;t ≤10μs p 2N7002BKM All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 25 October 2010 2 of 16

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit P total power dissipation T =25°C [2] - 360 mW tot amb [1] - 715 mW T =25°C - 2700 mW sp T junction temperature 150 °C j T ambient temperature −55 +150 °C amb T storage temperature −65 +150 °C stg Source-drain diode I source current T =25°C [1] - 450 mA S amb ESD maximum rating V electrostatic discharge humanbodymodel [3] - 2000 V ESD voltage [1] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad fordrain 1cm2. [2] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 017aaa001 017aaa002 120 120 Pder Ider (%) (%) 80 80 40 40 0 0 −75 −25 25 75 125 175 −75 −25 25 75 125 175 Tamb (°C) Tamb (°C) P I P = ------------t-o---t--------×100% I = ----------D----------×100% der P der I tot(25°C) D(25°C) Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a function of ambient temperature function of ambient temperature 2N7002BKM All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 25 October 2010 3 of 16

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET 017aaa108 10 ID (A) Limit RDSon = VDS/ID 1 (1) (2) 10−1 (3) (4) (5) (6) 10−2 10-1 1 10 102 VDS (V) IDM=single pulse (1) tp=100μs (2) tp=1ms (3) DC; Tsp=25°C (4) tp=10ms (5) tp=100ms (6) DC; Tamb=25°C; drain mounting pad 1cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air [1] - 305 350 K/W th(j-a) junction to ambient [2] - 150 175 K/W R thermal resistance from - - 40 K/W th(j-sp) junction to solder point [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad fordrain 1cm2. 2N7002BKM All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 25 October 2010 4 of 16

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET 103 017aaa109 Zth(j-a) duty cycle = 1 (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0.02 0.01 0 10 10−3 10−2 10−1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 017aaa110 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0 0.01 10 10−3 10−2 10−1 1 10 102 103 tp (s) FR4PCB, mounting pad for drain 1cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002BKM All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 25 October 2010 5 of 16

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics T =25°C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source breakdown I =10μA; V =0V 60 - - V (BR)DSS D GS voltage V gate-source threshold I =250μA; V =V 1.1 1.6 2.1 V GS(th) D DS GS voltage I drain leakage current V =60V; V =0V DSS DS GS T =25°C - - 1 μA j T =150°C - - 10 μA j I gate leakage current V =±20V; V =0V - - 10 μA GSS GS DS R drain-source on-state [1] DSon resistance V =5V; I =50mA - 1.3 2 Ω GS D V =10V; I =500mA - 1 1.6 Ω GS D g forward V =10V; I =200mA [1] - 550 - mS fs DS D transconductance Dynamic characteristics Q total gate charge I =300mA; - 0.5 0.6 nC G(tot) D V =30V; Q gate-source charge DS - 0.2 - nC GS V =4.5V GS Q gate-drain charge - 0.1 - nC GD C input capacitance V =0V; V =10V; - 33 50 pF iss GS DS f=1MHz C output capacitance - 7 - pF oss C reverse transfer - 4 - pF rss capacitance t turn-on delay time V =50V; - 5 10 ns d(on) DS R =250Ω; t rise time L - 6 - ns r V =10V; GS td(off) turn-off delay time RG=6Ω - 12 24 ns t fall time - 7 - ns f Source-drain diode V source-drain voltage I =115mA; V =0V 0.47 0.75 1.1 V SD S GS [1] Pulse test: tp≤300μs; δ≤0.01. 2N7002BKM All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 25 October 2010 6 of 16

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET 0.7 017aaa039 10−3 017aaa040 ID VGS = 4.0 V 3.5 V (A) 0.6 ID (A) 3.25 V 0.5 10−4 (1) (2) (3) 0.4 3.0 V 0.3 2.75 V 10−5 0.2 2.5 V 0.1 0.0 10−6 0.0 1.0 2.0 3.0 4.0 0.0 1.0 2.0 3.0 VDS (V) VGS (V) Tamb=25°C Tamb=25°C; VDS=5V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a Fig 7. Sub-threshold drain current as a function of function of drain-source voltage; typical gate-source voltage values 017aaa041 017aaa042 6.0 6.0 RDSon RDSon (Ω) (Ω) (1) 4.0 4.0 (2) (3) (1) 2.0 2.0 (4) (2) (5) 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 0.0 2.0 4.0 6.0 8.0 10.0 ID (A) VGS (V) Tamb=25°C ID=500mA (1) VGS=3.25V (1) Tamb=150°C (2) VGS=3.5V (2) Tamb=25°C (3) VGS=4V (4) VGS=5V (5) V =10V GS Fig 8. Drain-source on-state resistance as a function Fig 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values 2N7002BKM All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 25 October 2010 7 of 16

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET 017aaa043 017aaa044 1.0 2.4 ID a (A) 0.8 (1) (2) 1.8 0.6 1.2 0.4 0.6 0.2 0.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 −60 0 60 120 180 VGS (V) Tamb (°C) VDS>ID×RDSon R a = ------------D---S---o---n-------- (1) Tamb=25°C R DSon(25°C) (2) Tamb=150°C Fig 10. Transfer characteristics: drain current as a Fig 11. Normalized drain-source on-state resistance function of gate-source voltage; typical values as a function of ambient temperature; typical values 3.0 017aaa045 102 017aaa046 VGS(th) (V) (1) C (1) (pF) 2.0 (2) (2) 10 (3) (3) 1.0 0.0 1 −60 0 60 120 180 10−1 1 10 102 Tamb (°C) VDS (V) ID=0.25mA; VDS=VGS f=1MHz; VGS=0V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of Fig 13. Input, output and reverse transfer ambient temperature capacitances as a function of drain-source voltage; typical values 2N7002BKM All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 25 October 2010 8 of 16

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET 017aaa047 5.0 VGS (V) 4.0 VDS 3.0 ID VGS(pl) 2.0 VGS(th) 1.0 VGS QGS1 QGS2 QGS QGD 0.00.0 0.2 0.4 0.6 0.8 QG(tot) QG (nC) 003aaa508 ID=300mA; VDS=6V; Tamb=25°C Fig 14. Gate-source voltage as a function of gate Fig 15. Gate charge waveform definitions charge; typical values 017aaa048 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.2 VSD (V) V =0V GS (1) Tamb=150°C (2) Tamb=25°C Fig 16. Source current as a function of source-drain voltage; typical values 2N7002BKM All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 25 October 2010 9 of 16

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET 8. Test information P duty cycle δ = t1 t2 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 2N7002BKM All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 25 October 2010 10 of 16

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET 9. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883 L L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A(1) mAa1x. b b1 D E e e1 L L1 0.50 0.20 0.55 0.62 1.02 0.30 0.30 mm 0.03 0.35 0.65 0.46 0.12 0.47 0.55 0.95 0.22 0.22 Note 1. Including plating thickness OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 03-02-05 SOT883 SC-101 03-04-03 Fig 18. Package outline SOT883(SC-101) 2N7002BKM All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 25 October 2010 11 of 16

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET 10. Soldering 1.3 0.7 R0.05 (12×) solder lands solder resist 0.9 0.6 0.7 0.25 solder paste (2×) occupied area 0.3 (2×) 0.3 Dimensions in mm 0.4 (2×) 0.4 sot883_fr Fig 19. Reflow soldering footprint SOT883(SC-101) 2N7002BKM All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 25 October 2010 12 of 16

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes 2N7002BKM v.1 20101025 Product data sheet - - 2N7002BKM All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 25 October 2010 13 of 16

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nexperia.com. 12.2 Definitions malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Draft — The document is a draft version only. The content is still under Nexperia products in such equipment or applications and internal review and subject to formal approval, which may result in therefore such inclusion and/or use is at the customer’s own risk. modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of Applications — Applications that are described herein for any of these information included herein and shall have no liability for the consequences of products are for illustrative purposes only. Nexperia makes no use of such information. representation or warranty that such applications will be suitable for the specified use without further testing or modification. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended Customers are responsible for the design and operation of their applications for quick reference only and should not be relied upon to contain detailed and and products using Nexperia products, and Nexperia full information. For detailed and full information see the relevant full data accepts no liability for any assistance with applications or customer product sheet, which is available on request via the local Nexperia sales design. It is customer’s sole responsibility to determine whether the Nexperia office. In case of any inconsistency or conflict with the short data sheet, the product is suitable and fit for the customer’s applications and full data sheet shall prevail. products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate Product specification — The information and data provided in a Product design and operating safeguards to minimize the risks associated with their data sheet shall define the specification of the product as agreed between applications and products. Nexperia and its customer, unless Nexperia and Nexperia does not accept any liability related to any default, customer have explicitly agreed otherwise in writing. In no event however, damage, costs or problem which is based on any weakness or default in the shall an agreement be valid in which the Nexperia product is customer’s applications or products, or the application or use by customer’s deemed to offer functions and qualities beyond those described in the third party customer(s). Customer is responsible for doing all necessary Product data sheet. testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and 12.3 Disclaimers the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limited warranty and liability — Information in this document is believed to Limiting values — Stress above one or more limiting values (as defined in be accurate and reliable. However, Nexperia does not give any the Absolute Maximum Ratings System of IEC60134) will cause permanent representations or warranties, expressed or implied, as to the accuracy or damage to the device. Limiting values are stress ratings only and (proper) completeness of such information and shall have no liability for the operation of the device at these or any other conditions above those given in consequences of use of such information. the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or In no event shall Nexperia be liable for any indirect, incidental, repeated exposure to limiting values will permanently and irreversibly affect punitive, special or consequential damages (including - without limitation - lost the quality and reliability of the device. profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such Terms and conditions of commercial sale — Nexperia damages are based on tort (including negligence), warranty, breach of products are sold subject to the general terms and conditions of commercial contract or any other legal theory. sale, as published at http://www.nexperia.com/profile/terms, unless otherwise Notwithstanding any damages that customer might incur for any reason agreed in a valid written individual agreement. In case an individual whatsoever, Nexperia’s aggregate and cumulative liability towards agreement is concluded only the terms and conditions of the respective customer for the products described herein shall be limited in accordance agreement shall apply. Nexperia hereby expressly objects to with the Terms and conditions of commercial sale of Nexperia. applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without No offer to sell or license — Nothing in this document may be interpreted or limitation specifications and product descriptions, at any time and without construed as an offer to sell products that is open for acceptance or the grant, notice. This document supersedes and replaces all information supplied prior conveyance or implication of any license under any copyrights, patents or to the publication hereof. other industrial or intellectual property rights. Suitability for use — Nexperia products are not designed, Export control — This document as well as the item(s) described herein authorized or warranted to be suitable for use in life support, life-critical or may be subject to export control regulations. Export might require a prior safety-critical systems or equipment, nor in applications where failure or authorization from national authorities. 2N7002BKM All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 25 October 2010 14 of 16

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET Quick reference data — The Quick reference data is an extract of the 12.4 Trademarks product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com 2N7002BKM All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 25 October 2010 15 of 16

2N7002BKM Nexperia 60 V, 450 mA N-channel Trench MOSFET 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 10 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 11 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13 Contact information. . . . . . . . . . . . . . . . . . . . . 15 14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 25 October 2010