ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 阵列 > UMY1NTR
Datasheet下载- 型号： UMY1NTR
- 制造商： ROHM Semiconductor
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UMY1NTR产品简介：
ICGOO电子元器件商城为您提供UMY1NTR由ROHM Semiconductor设计生产，在icgoo商城现货销售，并且可以通过原厂、代理商等渠道进行代购。 UMY1NTR价格参考￥0.67-￥1.31。ROHM SemiconductorUMY1NTR封装/规格：晶体管 - 双极 (BJT) - 阵列， Bipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 50V 150mA 180MHz, 140MHz 150mW Surface Mount UMT5。您可以下载UMY1NTR参考资料、Datasheet数据手册功能说明书，资料中有UMY1NTR 详细功能的应用电路图电压和使用方法及教程。
| 参数 | 数值 |
| 产品目录 | |
| 描述 | TRANS NPN/PNP 50V 150MA 5UMT两极晶体管 - BJT NPN/PNP 50V 150MA |
| 产品分类 | 晶体管(BJT) - 阵列分离式半导体 |
| 品牌 | Rohm Semiconductor |
| 产品手册 | |
| 产品图片 |
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| rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
| 产品系列 | 晶体管,两极晶体管 - BJT,ROHM Semiconductor UMY1NTR- |
| 数据手册 | |
| 产品型号 | UMY1NTR |
| 不同 Ib、Ic时的 Vce饱和值（最大值） | 400mV @ 5mA，50mA / 500mV @ 5mA，50mA |
| 不同 Ic、Vce 时的DC电流增益(hFE)（最小值） | 120 @ 1mA，6V |
| 产品目录绘图 |
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| 产品目录页面 | |
| 产品种类 | 两极晶体管 - BJT |
| 供应商器件封装 | UMT5 |
| 其它名称 | UMY1NDKR |
| 功率-最大值 | 150mW |
| 包装 | 带卷 （TR） |
| 发射极-基极电压VEBO | - 6 V, + 7 V |
| 商标 | ROHM Semiconductor |
| 增益带宽产品fT | 140 MHz, 180 MHz |
| 安装类型 | 表面贴装 |
| 安装风格 | SMD/SMT |
| 封装 | Reel |
| 封装/外壳 | 6-TSSOP（5 引线），SC-88A，SOT-353 |
| 封装/箱体 | SC-88A |
| 工厂包装数量 | 3000 |
| 晶体管极性 | NPN/PNP |
| 晶体管类型 | NPN，PNP（耦合发射器） |
| 最大功率耗散 | 150 mW |
| 最大工作温度 | + 150 C |
| 最大直流电集电极电流 | 0.15 A |
| 最小工作温度 | - 55 C |
| 标准包装 | 3,000 |
| 电压-集射极击穿（最大值） | 50V |
| 电流-集电极(Ic)（最大值） | 150mA |
| 电流-集电极截止（最大值） | - |
| 直流电流增益hFE最大值 | 560 |
| 直流集电极/BaseGainhfeMin | 120 |
| 配置 | Dual |
| 集电极—发射极最大电压VCEO | - 50 V, + 50 V |
| 集电极—基极电压VCBO | - 60 V, + 60 V |
| 集电极—射极饱和电压 | - 0.5 V, + 0.4 V |
| 集电极连续电流 | - 150 mA, 150 mA |
| 频率-跃迁 | 180MHz，140MHz |
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PDF Datasheet 数据手册内容提取
EMY1 / UMY1N / FMY1A Emitter common (dual transistors) Datasheet <For Tr1(PNP)> llOutline Parameter Value SOT-553 SOT-353 V -50V CEO I -150mA C EMY1 UMY1N <For Tr2(NPN)> (EMT5) (UMT5) Parameter Value SOT-25 V 50V CEO I 150mA C FMY1A (SMT5) llFeatures llInner circuit 1) Included a 2SA1037AK and a 2SC2412K transistor in a EMT, UMT or SMT package. EMY1 / UMY1N 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) PNP and NPN transistors have common emitters. 4) Mounting cost and area can be cut in half. FMY1A llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMY1 1616 T2R 180 8 8000 Y1 (EMT5) SOT-353 UMY1N 2021 TR 180 8 3000 Y1 (UMT5) SOT-25 FMY1A 2928 T148 180 8 3000 Y1 (SMT5) www.rohm.com 1/11 20150825 - Rev.003 © 2015 ROHM Co., Ltd. All rights reserved.
EMY1 / UMY1N / FMY1A Datasheet llAbsolute maximum ratings (T = 25°C) a Parameter Symbol Tr1(PNP) Tr2(NPN) Unit Collector-base voltage V -60 60 V CBO Collector-emitter voltage V -50 50 V CEO Emitter-base voltage V -6 7 V EBO Collector current I -150 150 mA C EMY1/ UMY1N P *1 *2 150 mW/Total D Power dissipation FMY1A P *1 *3 300 mW/Total D Junction temperature T 150 ℃ j Range of storage temperature T -55 to +150 ℃ stg llElectrical characteristics (T = 25°C) <For Tr1(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = -50μA -60 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V voltage CEO C Emitter-base breakdown voltage BV I = -50μA -6 - - V EBO E Collector cut-off current I V = -60V - - -100 nA CBO CB Emitter cut-off current I V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - - -500 mV CE(sat) C B DC current gain h V = -6V, I = -1mA 120 - 560 - FE CE C V = -12V, I = 2mA, CE E Transition frequency f - 140 - MHz T f = 100MHz V = -12V, I = 0mA, Output capacitance C CB E - 4.0 5.0 pF ob f = 1MHz llElectrical characteristics (T = 25°C) <For Tr2(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = 50μA 60 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V voltage CEO C Emitter-base breakdown voltage BV I = 50μA 7 - - V EBO E Collector cut-off current I V = 60V - - 100 nA CBO CB Emitter cut-off current I V = 7V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 400 V CE(sat) C B DC current gain h V = 6V, I = 1mA 120 - 560 - FE CE C V = 12V, I = -2mA, CE E Transition frequency f - 180 - MHz T f = 100MHz V = 12V, I = 0A, Output capacitance C CB E - 2.0 3.5 pF ob f = 1MHz *1 Each terminal mounted on a referenve land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. www.rohm.com 2/11 20150825 - Rev.003 © 2015 ROHM Co., Ltd. All rights reserved.
EMY1 / UMY1N / FMY1A Datasheet llElectrical characteristic curves(T =25°C) <For Tr1(PNP)> a Fig.1 Ground Emitter Propagation Fig.2 Grounded Emitter Output Characteristics Characteristics Fig.3 DC Current Gain vs. Collector Fig.4 DC Current Gain vs. Collector Current (I) Current (lI) www.rohm.com 3/11 20150825 - Rev.003 © 2015 ROHM Co., Ltd. All rights reserved.
EMY1 / UMY1N / FMY1A Datasheet llElectrical characteristic curves(T =25°C) <For Tr1(PNP)> a Fig.5 Collector-Emitter Saturation Voltage Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current(l) vs. Collector Current(ll) Fig.7 Base-Emitter Saturation Voltage Fig.8 Gain Bandwith Product vs. vs. Collector Current (I) Emitter Current www.rohm.com 4/11 20150825 - Rev.003 © 2015 ROHM Co., Ltd. All rights reserved.
EMY1 / UMY1N / FMY1A Datasheet llElectrical characteristic curves(T =25°C) <For Tr1(PNP)> a Fig.9 Collector Output Capacitance vs. Fig.10 Safe Operating Area ollector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage Fig.11 Safe Operating Area Fig.12 Safe Operating Area www.rohm.com 5/11 20150825 - Rev.003 © 2015 ROHM Co., Ltd. All rights reserved.
EMY1 / UMY1N / FMY1A Datasheet llElectrical characteristic curves(T =25°C) <For Tr2(NPN)> a Fig.13 Ground Emitter Propagation Fig.14 Grounded Emitter Output Characteristics Characteristics Fig.15 DC Current Gain vs. Collector Fig.16 DC Current Gain vs. Collector Current (I) Current (lI) www.rohm.com 6/11 20150825 - Rev.003 © 2015 ROHM Co., Ltd. All rights reserved.
EMY1 / UMY1N / FMY1A Datasheet llElectrical characteristic curves (T = 25°C) <For Tr2(NPN)> a Fig.17 Collector-Emitter Saturation Voltage Fig.18 Collector-Emitter Saturation Voltage vs. Collector Current(l) vs. Collector Current(ll) Fig.19 Base-Emitter Saturation Voltage Fig.20 Gain Bandwith Product vs. vs. Collector Current (I) Emitter Current www.rohm.com 7/11 20150825 - Rev.003 © 2015 ROHM Co., Ltd. All rights reserved.
EMY1 / UMY1N / FMY1A Datasheet llElectrical characteristic curves(T = 25°C) <For TR2(NPN)> a Fig.21 Collector Output Capacitance vs. Fig.22 Safe Operating Area ollector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage Fig.23 Safe Operating Area Fig.24 Safe Operating Area www.rohm.com 8/11 20150825 - Rev.003 © 2015 ROHM Co., Ltd. All rights reserved.
EMY1 / UMY1N / FMY1A Datasheet llDimensions www.rohm.com 9/11 20150825 - Rev.003 © 2015 ROHM Co., Ltd. All rights reserved.
EMY1 / UMY1N / FMY1A Datasheet llDimensions www.rohm.com 10/11 20150825 - Rev.003 © 2015 ROHM Co., Ltd. All rights reserved.
EMY1 / UMY1N / FMY1A Datasheet llDimensions www.rohm.com 11/11 20150825 - Rev.003 © 2015 ROHM Co., Ltd. All rights reserved.
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