MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) (cid:2) (cid:2) R1 = 10 k , R2 = 10 k www.onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− (INPUT) R2 emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER both system cost and board space. (GROUND) Features MARKING DIAGRAMS • Simplifies Circuit Design • Reduces Board Space SC−59 • Reduces Component Count XX M(cid:2) CASE 318D (cid:2) • STYLE 1 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS XXX M(cid:2) SOT−23 CASE 318 Compliant (cid:2) STYLE 6 1 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit SC−70/SOT−323 XX M(cid:2) CASE 419 Collector−Base Voltage VCBO 50 Vdc (cid:2) STYLE 3 Collector−Emitter Voltage VCEO 50 Vdc 1 Collector Current − Continuous IC 100 mAdc SC−75 Input Forward Voltage VIN(fwd) 40 Vdc XX M CASE 463 STYLE 1 Input Reverse Voltage VIN(rev) 10 Vdc 1 Stresses exceeding those listed in the Maximum Ratings table may damage the SOT−723 device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA assumed, damage may occur and reliability may be affected. 1 STYLE 1 SOT−1123 X M 1 CASE 524AA STYLE 1 XXX = Specific Device Code M = Date Code* (cid:2) = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2000 1 Publication Order Number: July, 2018 − Rev. 9 DTA114E/D

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping† MUN2111T1G, SMUN2111T1G 6A SC−59 3000 / Tape & Reel (Pb−Free) SMUN2111T3G 6A SC−59 10000 / Tape & Reel (Pb−Free) MMUN2111LT1G, SMMUN2111LT1G A6A SOT−23 3000 / Tape & Reel (Pb−Free) MMUN2111LT3G, SMMUN2111LT3G A6A SOT−23 10000 / Tape & Reel (Pb−Free) MUN5111T1G, SMUN5111T1G 6A SC−70/SOT−323 3000 / Tape & Reel (Pb−Free) DTA114EET1G, NSVDTA114EET1G 6A SC−75 3000 / Tape & Reel (Pb−Free) DTA114EM3T5G, NSVDTA114EM3T5G 6A SOT−723 8000 / Tape & Reel (Pb−Free) NSBA114EF3T5G F SOT−1123 8000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 300 W) 250 m N ( O (1) SC−75 and SC−70/SOT−323; Minimum Pad ATI 200 (2) SC−59; Minimum Pad P (1) (2)(3) (4)(5) (3) SOT−23; Minimum Pad SSI 150 (4) SOT−1123; 100 mm2, 1 oz. copper trace DI (5) SOT−723; Minimum Pad R E 100 W O P , D 50 P 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve www.onsemi.com 2

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit THERMAL CHARACTERISTICS (SC−59) (MUN2111) Total Device Dissipation PD TA = 25°C (Note 1) 230 mW (Note 2) 338 Derate above 25°C (Note 1) 1.8 mW/°C (Note 2) 2.7 Thermal Resistance, (Note 1) R(cid:2)JA 540 °C/W Junction to Ambient (Note 2) 370 Thermal Resistance, (Note 1) R(cid:2)JL 264 °C/W Junction to Lead (Note 2) 287 Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS (SOT−23) (MMUN2111L) Total Device Dissipation PD TA = 25°C (Note 1) 246 mW (Note 2) 400 Derate above 25°C (Note 1) 2.0 mW/°C (Note 2) 3.2 Thermal Resistance, (Note 1) R(cid:2)JA 508 °C/W Junction to Ambient (Note 2) 311 Thermal Resistance, (Note 1) R(cid:2)JL 174 °C/W Junction to Lead (Note 2) 208 Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5111) Total Device Dissipation PD TA = 25°C (Note 1) 202 mW (Note 2) 310 Derate above 25°C (Note 1) 1.6 mW/°C (Note 2) 2.5 Thermal Resistance, (Note 1) R(cid:2)JA 618 °C/W Junction to Ambient (Note 2) 403 Thermal Resistance, (Note 1) R(cid:2)JL 280 °C/W Junction to Lead (Note 2) 332 Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS (SC−75) (DTA114EE) Total Device Dissipation PD TA = 25°C (Note 1) 200 mW (Note 2) 300 Derate above 25°C (Note 1) 1.6 mW/°C (Note 2) 2.4 Thermal Resistance, (Note 1) R(cid:2)JA 600 °C/W Junction to Ambient (Note 2) 400 Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS (SOT−723) (DTA114EM3) Total Device Dissipation PD TA = 25°C (Note 1) 260 mW (Note 2) 600 Derate above 25°C (Note 1) 2.0 mW/°C (Note 2) 4.8 Thermal Resistance, (Note 1) R(cid:2)JA 480 °C/W Junction to Ambient (Note 2) 205 Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. 3. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 4. FR−4 @ 500 mm2, 1 oz. copper traces, still air. www.onsemi.com 3

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit THERMAL CHARACTERISTICS (SOT−1123) (NSBA114EF3) Total Device Dissipation PD TA = 25°C (Note 3) 254 mW (Note 4) 297 Derate above 25°C (Note 3) 2.0 mW/°C (Note 4) 2.4 Thermal Resistance, (Note 3) R(cid:2)JA 493 °C/W Junction to Ambient (Note 4) 421 Thermal Resistance, Junction to Lead R(cid:2)JL 193 °C/W (Note 3) Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. 3. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 4. FR−4 @ 500 mm2, 1 oz. copper traces, still air. Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Cutoff Current ICBO nAdc (VCB = 50 V, IE = 0) − − 100 Collector−Emitter Cutoff Current ICEO nAdc (VCE = 50 V, IB = 0) − − 500 Emitter−Base Cutoff Current IEBO mAdc (VEB = 6.0 V, IC = 0) − − 0.5 Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 10 (cid:3)A, IE = 0) 50 − − Collector−Emitter Breakdown Voltage (Note 5) V(BR)CEO Vdc (IC = 2.0 mA, IB = 0) 50 − − ON CHARACTERISTICS DC Current Gain (Note 5) hFE (IC = 5.0 mA, VCE = 10 V) 35 60 − Collector−Emitter Saturation Voltage (Note 5) VCE(sat) Vdc (IC = 10 mA, IB = 0.3 mA) − − 0.25 Input Voltage (off) Vi(off) Vdc (VCE = 5.0 V, IC = 100 (cid:3)A) − 1.2 0.8 Input Voltage (on) Vi(on) Vdc (VCE = 0.3 V, IC = 10 mA) 2.5 1.8 − Output Voltage (on) VOL Vdc (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k(cid:4)) − − 0.2 Output Voltage (off) VOH Vdc (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k(cid:4)) 4.9 − − Input Resistor R1 7.0 10 13 k(cid:4) Resistor Ratio R1/R2 0.8 1.0 1.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. www.onsemi.com 4

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 TYPICAL CHARACTERISTICS MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3 1 1000 R IC/IB=10 VCE = 10 V E T EMIT TA=−25°C 25°C GAIN COLLECTOR−VOLTAGE (V)0.1 75°C DC CURRENT 100 25°TCA−=257°5C°C , sat) , FE E( h C V 0.01 10 0 20 40 60 80 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 2. V vs. I Figure 3. DC Current Gain CE(sat) C 10 100 75°C 25°C CE (pF) 89 flTE A= = =1 0 02 A5kH°Cz T (mA) 10 TA=−25°C N N A 7 E T R ACI 6 UR 1 P C A 5 R C O T 4 T U C 0.1 P E T 3 L U L C, Oob 12 I, COC 0.01 VO = 5 V 0 0.001 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage 100 VO = 0.2 V V) E ( AG 10 TA=−25°C LT 25°C O V 75°C T U P N , In 1 Vi 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current www.onsemi.com 5

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 TYPICAL CHARACTERISTICS − NSBA114EF3 1 1000 R IC/IB = 10 25°C E T T N 150°C MI AI E G OR−E (V) 25°C 150°C ENT 100 −55°C COLLECTVOLTAG0.1 DC CURR 10 , E(sat) −55°C h, FE VC VCE = 10 V 0.01 1 0 10 20 30 40 50 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. V vs. I Figure 8. DC Current Gain CE(sat) C 7 100 f = 10 kHz 150°C CE (pF) 6 ITEA == 02 5A°C T (mA) 10 −55°C N 5 N A E T R 25°C CI R A 4 U P C A R 1 C 3 O T T U C P E T 2 L U L 0.1 O O C, ob 1 I, CC VO = 5 V 0 0.01 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage 100 V) GE ( 10 25°C A LT −55°C O V T U P N 1 , In 150°C Vi VO = 0.2 V 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current www.onsemi.com 6

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE H D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES 3 DIM MIN NOM MAX MIN NOM MAX HE 1 2 E AA1 01..0010 01..0165 01..1300 00..000319 00..004052 00..005014 b 0.35 0.43 0.50 0.014 0.017 0.020 c 0.09 0.14 0.18 0.003 0.005 0.007 D 2.70 2.90 3.10 0.106 0.114 0.122 b E 1.30 1.50 1.70 0.051 0.059 0.067 e e 1.70 1.90 2.10 0.067 0.075 0.083 L 0.20 0.40 0.60 0.008 0.016 0.024 HE 2.50 2.80 3.00 0.099 0.110 0.118 STYLE 1: C PIN 1.BASE A 2.EMITTER 3.COLLECTOR L A1 SOLDERING FOOTPRINT* 0.95 0.95 0.037 0.037 2.4 0.094 1.0 0.039 0.8 (cid:2) mm (cid:3) SCALE 10:1 0.031 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 7

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS D NOTES: 1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2.CONTROLLING DIMENSION: MILLIMETERS. 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4.DPIRMOETNRSUIOSNIOSN DS ,A ONRD GEA DTOE NBOURT RINSC.LUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0(cid:3) −−− 10(cid:3) 0(cid:3) −−− 10(cid:3) A1 c SIDE VIEW SEE VIEW C STYLE 6: END VIEW PIN 1. BASE 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. e1 2. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES 3 DIM MIN NOM MAX MIN NOM MAX A 0.80 0.90 1.00 0.032 0.035 0.040 HE E A1 0.00 0.05 0.10 0.000 0.002 0.004 1 2 A2 0.70 REF 0.028 REF b 0.30 0.35 0.40 0.012 0.014 0.016 c 0.10 0.18 0.25 0.004 0.007 0.010 D 1.80 2.10 2.20 0.071 0.083 0.087 b E 1.15 1.24 1.35 0.045 0.049 0.053 e 1.20 1.30 1.40 0.047 0.051 0.055 e e1 0.65 BSC 0.026 BSC L 0.20 0.38 0.56 0.008 0.015 0.022 HE 2.00 2.10 2.40 0.079 0.083 0.095 STYLE 3: c A A2 PIN 1.BASE 2.EMITTER 3.COLLECTOR 0.05 (0.002) L A1 SOLDERING FOOTPRINT* 0.65 0.65 0.025 0.025 1.9 0.075 0.9 0.035 0.7 0.028 (cid:2) (cid:3) mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 9

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463 ISSUE G −E− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 MILLIMETERS INCHES 3 e −D− DIM MIN NOM MAX MIN NOM MAX A 0.70 0.80 0.90 0.027 0.031 0.035 1 A1 0.00 0.05 0.10 0.000 0.002 0.004 b3 PL b 0.15 0.20 0.30 0.006 0.008 0.012 0.20 (0.008) M D C 0.10 0.15 0.25 0.004 0.006 0.010 HE 0.20 (0.008) E D 1.55 1.60 1.65 0.059 0.063 0.067 E 0.70 0.80 0.90 0.027 0.031 0.035 e 1.00 BSC 0.04 BSC L 0.10 0.15 0.20 0.004 0.006 0.008 HE 1.50 1.60 1.70 0.061 0.063 0.065 C STYLE 1: A PIN 1.BASE 2.EMITTER 3.COLLECTOR L A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.787 0.071 0.031 0.508 0.020 1.000 0.039 (cid:2) (cid:3) mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 10

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME D Y14.5M, 1994. b1 A 2. CONTROLLING DIMENSION: MILLIMETERS. 3 −Y− 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. E HE 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 1 2 2X e 2Xb0.08 X Y C DAIM M0.I4NM5ILLNI0MO.5EM0TERSM0.A55X SIDE VIEW b 0.15 0.21 0.27 TOP VIEW b1 0.25 0.31 0.37 C 0.07 0.12 0.17 3XL D 1.15 1.20 1.25 1 E 0.75 0.80 0.85 e 0.40 BSC HE 1.15 1.20 1.25 L 0.29 REF L2 0.15 0.20 0.25 STYLE 1: PIN 1.BASE 3XL2 2.EMITTER BOTTOM VIEW 3.COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 11

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 PACKAGE DIMENSIONS SOT−1123 CASE 524AA ISSUE C D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME −Y− Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 1 3 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD E FINISH. MINIMUM LEAD THICKNESS IS THE 2 MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. TOP VIEW MILLIMETERS A DIM MIN MAX A 0.34 0.40 b 0.15 0.28 b1 0.10 0.20 c 0.07 0.17 D 0.75 0.85 c HE E 0.55 0.65 e 0.35 0.40 SIDE VIEW HE 0.95 1.05 L 0.185 REF L2 0.05 0.15 3XL2 b STPYINL E1 .1B:ASE 0.08 X Y 2.EMITTER 3.COLLECTOR e 3XL 2Xb1 BOTTOM VIEW SOLDERING FOOTPRINT* 1.20 3X0.34 0.26 1 0.38 2X 0.20 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada For additional information, please contact your local Email: orderlit@onsemi.com Sales Representative ◊ www.onsemi.com DTA114E/D 12

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MUN2111T1G MUN5111T1G NSBA114EF3T5G SMUN5111T1G