(cid:2)(cid:3)(cid:1)(cid:4)(cid:1)(cid:5)(cid:6)(cid:7)(cid:8)(cid:8) IRF7468PbF SMPS MOSFET HEXFET(cid:1)(cid:1)Power MOSFET Applications (cid:1) High Frequency Isolated DC-DC V R max(m(cid:1)(cid:2) I DSS DS(on) D Converters with Synchronous Rectification 40V 15.5@V = 10V 9.4A for Telecom and Industrial Use GS (cid:1) High Frequency Buck Converters for Computer Processor Power (cid:1) Lead-Free A A S 1 8 D Benefits S 2 7 D (cid:1) Ultra-Low Gate Impedance S 3 6 D (cid:1) Very Low RDS(on) at 4.5V VGS G 4 5 D (cid:1) Fully Characterized Avalanche Voltage SO-8 Top View and Current Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 40 V DS VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 9.4 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 7.5 A IDM Pulsed Drain Current(cid:3) 75 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 mW/°C T , T Junction and Storage Temperature Range -55 to + 150 °C J STG Thermal Resistance Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient (cid:2) ––– 50 °C/W Notes(cid:1)(cid:1)(cid:2)through (cid:1) are on page 8 www.irf.com 1 (cid:1)(cid:2)(cid:3)(cid:4)(cid:2)(cid:5)(cid:6)

IRF7468PbF Static @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.025 ––– V/°C Reference to 25°C, ID = 1mA ––– 11.7 15.5 VGS = 10V, ID = 9.4A(cid:3)(cid:6) RDS(on) Static Drain-to-Source On-Resistance ––– 13.0 17.0 mΩ VGS = 4.5V, ID = 7.5A(cid:3)(cid:6) ––– 18.0 35.0 VGS = 4.5V, ID = 4.7A(cid:3)(cid:6) VGS(th) Gate Threshold Voltage 0.8 ––– 2.0 V VDS = VGS, ID = 250µA I Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 32V, VGS = 0V DSS ––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125°C I Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 12V GSS Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -12V Dynamic @ T = 25°C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 27 ––– ––– S VDS = 20V, ID = 8.0A Qg Total Gate Charge ––– 23 34 ID = 8.0A Qgs Gate-to-Source Charge ––– 6.4 9.6 nC VDS = 20V Qgd Gate-to-Drain ("Miller") Charge ––– 6.7 10 VGS = 4.5V, (cid:2) Qoss Output Gate Charge ––– 17 26 VGS = 0V, VDS = 16V td(on) Turn-On Delay Time ––– 7.6 ––– VDD = 20V tr Rise Time ––– 2.3 ––– ns ID = 8.0A td(off) Turn-Off Delay Time ––– 20 ––– RG = 1.8Ω tf Fall Time ––– 3.8 ––– VGS = 4.5V(cid:3)(cid:2) Ciss Input Capacitance ––– 2460 ––– VGS = 0V Coss Output Capacitance ––– 490 ––– VDS = 20V Crss Reverse Transfer Capacitance ––– 38 ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy(cid:4) ––– 160 mJ AS I Avalanche Current(cid:5) ––– 8.0 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 2.3 MOSFET symbol D (Body Diode) showing the (cid:7) ISM Pulsed Source Current ––– ––– 74 integral reverse G (Body Diode) (cid:5) p-n junction diode. S VSD Diode Forward Voltage –––––– 00..8615 –1–.3– V TTJJ == 2152°5C°C, ,I SI S= = 8 .80.A0A, ,V VGGS S= =0 V0V(cid:3) (cid:4)(cid:4) trr Reverse Recovery Time ––– 45 68 ns TJ = 25°C, IF = 8.0A, VR=20V Qrr Reverse Recovery Charge ––– 76 110 nC di/dt = 100A/µs(cid:1)(cid:4) trr Reverse Recovery Time ––– 58 87 ns TJ = 125°C, IF = 8.0A, VR=20V Qrr Reverse Recovery Charge ––– 110 160 nC di/dt = 100A/µs(cid:1)(cid:4) 2 www.irf.com

IRF7468PbF 1000 1000 VGS VGS TOP 15V TOP 15V 10V 10V A) 43..5000VV A) 43..5000VV ent ( 100 222...752005VVV ent ( 222...752005VVV Curr BOTTOM2.00V Curr 100 BOTTOM2.00V e e c c ur ur o 10 o S S o- o- n-t n-t ai ai 10 Dr Dr I , D 1 2.0V I , D 2.0V 20µs PULSE WIDTH 20µs PULSE WIDTH T J = 25°C T J = 150°C 0.1 1 0.1 1 10 100 0.1 1 10 100 VD S , Drain-to-Source Voltage (V) V D S , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID=10A e c A) an nt ( TJ = 150 ° C sist e e 1.5 Curr 10 n R ce TJ = 25 ° C e Oed) Sour ourcmaliz 1.0 I , Drain-to-D0. 11 V20 D µ Ss =P U15LVSE WIDTH R , Drain-to-SDS(on)(Nor 00..05 VGS=4.5V 2.0 2.4 2.8 3.2 3.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 V G S , Gate-to-Source Voltage (V) T J , Junction Temperature( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3

IRF7468PbF 100000 VGS = 0V, f = 1 MHZ 10 ID=8.0A Ciss = Cgs + Cgd, Cds SHORTED V) VDS= 32V Crss = Cgd e ( 8 VDS= 20V 10000 Coss = Cds + Cgd ag F) olt p V e( Ciss e 6 c c an ur cti1000 Coss So pa o- Ca e-t 4 C, at G 100 Crss V , GS 2 10 0 1 10 100 0 10 20 30 40 50 Q , Total Gate Charge (nC) V , Drain-to-Source Voltage (V) G DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A) nt ( TJ = 150 ° C e A)A) Curr 10 nt (nt ( 100 ain urreurre 10us se Dr ain Cain C 100us er DrDr I , RevSD 1 TJ = 25 ° C I , I , D 10 TA= 25 ° C 1ms TJ= 150 ° C 10ms V G S = 0 V Single Pulse 0.1 1 0.4 0.6 0.8 1.0 1.2 1 10 100 V S D ,Source-to-Drain Voltage (V) V D S , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com

Fig 6. On-Resistance Vs. Drain Current IRF7468PbF 10.0 (cid:9) (cid:1) (cid:8) (cid:1)(cid:2) (cid:8) 8.0 (cid:21)(cid:2) (cid:10)(cid:11)(cid:12)(cid:11)(cid:13)(cid:11) A) (cid:9)(cid:21) nt ( +-(cid:8)(cid:1)(cid:1) e 6.0 urr (cid:6)(cid:11)(cid:14)(cid:8) C n (cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)(cid:13)(cid:8)≤ 1 (cid:14)(cid:6) Drai 4.0 (cid:1)(cid:4)(cid:12)(cid:15)(cid:8)(cid:16)(cid:17)(cid:18)(cid:12)(cid:19)(cid:20)(cid:8)≤ 0.1 % I , D Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 T , Case Temperature ( ° C) C 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 ) Z thJA 10 00..1200 ( e 0.05 s n po 1 0.02 s e 0.01 al R PDM m t1 her 0.1 (THESRINMGALLE R PEUSLPSOENSE) t2 T Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ=PDMx ZthJA + TA 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (sec) 1 Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5

IRF7468PbF )Ω 0.020 )Ω0.025 e ( e( c c n n ssati 0.018 assti e e R R n n 0.020 O 0.016 O e e c c ur ur DSanoo, r--itSon() 00..001124 VGS = 4.5V VGS = 10V DSnooa-r- t,iSon()0.015 ID = 10A D D R 0.010 R 0.010 0 20 40 60 80 100 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage CurrentRegulator SameTypeasD.U.T. (cid:2) QG 50KΩ (cid:1)(cid:2) 12V .2µF .3µF QGS QGD D.U.T. +-VDS VG J) 400 ID VGS m TOP 3.6A 3mA Charge y ( 6.4A CurrentIGSamplingReIDsistors nerg 300 BOTTOM 8.0A E e h Fig 13a&b. Basic Gate Charge Test Circuit c n and Waveform a al 200 v A e s ul P 15V e 100 gl tp V(BR)DSS RGVDS IADS.UL.T DRIVE+-RVDDA E , SinAS 025 50 75 100 125 150 IAS 20V tp 0.01Ω Starting TJ , Junction Temperature( ° C) Fig 14c. Maximum Avalanche Energy Fig 14a&b. Unclamped Inductive Test circuit Vs. Drain Current and Waveforms 6 www.irf.com

IRF7468PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) INCHES MILLIMETERS DIM D B MIN MAX MIN MAX A 5 A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 8 7 6 5 c .0075 .0098 0.19 0.25 6 H D .189 .1968 4.80 5.00 E 0.25 [.010] A E .1497 .1574 3.80 4.00 1 2 3 4 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 6X e L .016 .050 0.40 1.27 y 0° 8° 0° 8° e1 K x 45° A C y 0.10 [.004] 8X b A1 8X L 8X c 0.25 [.010] C A B 7 FOOTPRINT NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR XXXX WW = WEEK INTERNATIONAL F7101 A = ASSEMBLY SITE CODE RECTIFIER LOT CODE LOGO PART NUMBER www.irf.com 7

IRF7468PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6) (cid:3)(cid:15)Repetitive rating; pulse width limited by (cid:4) Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. (cid:5) (cid:15)Starting T = 25°C, L = 5.0mH (cid:2) When mounted on 1 inch square copper board, t<10 sec J RG = 25Ω, IAS = 8.0A. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04 8 www.irf.com

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