DISCRETE SEMICONDUCTORS DATA SHEET BFM520 Dual NPN wideband transistor Product specification 1996 Oct 08 Supersedes data of 1995 Sep 04

NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 FEATURES PINNING - SOT363A  Small size PIN SYMBOL DESCRIPTION  Temperature and h matched FE 1 b base1 1  Low noise and high gain 2 e emitter1 1  High gain at low current and low capacitance at low 3 c collector2 2 voltage 4 b base2 2  Gold metallization ensures excellent reliability. 5 e emitter2 2 6 c collector1 1 APPLICATIONS  Oscillator and buffer amplifiers 6 5 4  Balanced amplifiers handbook, halfpage c1 c2  LNA/mixers. b1 b2 DESCRIPTION e1 e2 Dual transistor with two silicon NPN RF dies in a surface 1 2 3 mount 6-pin SOT363 (S-mini) package. Thetransistor is Top view MAM210 primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular Marking code: N2. phones, cordless phones, radar detectors, pagers and Fig.1 Simplified outline and symbol. satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Any single transistor C feedback capacitance I =0; V =3V; f=1MHz  0.4  pF re e CB f transition frequency I =20mA; V =3V; f=900MHz  9  GHz T C CE s 2 insertion power gain IC=20mA; VCE=3V; 13 14.5  dB 21 f=900MHz; T =25C amb G maximum unilateral power gain I =20mA; V =3V;  15  dB UM C CE f=900MHz; T =25C amb F noise figure I =5mA; V =3V;  1.2 1.6 dB C CE f=900MHz;  = S opt R thermal resistance from junction single loaded  230 K/W thj-s to soldering point double loaded  115 K/W 1996Oct08 2

NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 LIMITING VALUES In accordance with the Absolute Maximum System (IEC134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Any single transistor V collector-base voltage open emitter  20 V CBO V collector-emitter voltage open base  8 V CEO V emitter-base voltage open collector  2.5 V EBO I DC collector current  70 mA C P total power dissipation up to T =118C; note1  1 W tot s T storage temperature 65 +175 C stg T junction temperature  175 C j THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction single loaded 230 K/W thj-s to soldering point; note1 double loaded 115 K/W Note to the Limiting values and Thermal characteristics 1. T is the temperature at the soldering point of the collector pin. s 1996Oct08 3

NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 CHARACTERISTICS T =25C unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics of any single transistor V collector-base breakdown voltage I =2.5A; I =0 20  V (BR)CBO C E V collector-emitter breakdown voltage I =10A; I =0 8  V (BR)CEO C B V emitter-base breakdown voltage I =2.5A; I =0 2.5  V (BR)EBO E C I collector-base leakage current V =6V; I =0  50 nA CBO CB E h DC current gain I =20mA; V =6V 60 120 250 FE C CE DC characteristics of the dual transistor h ratio of highest and lowest DC I =I =20mA; 1 1.2  FE C1 C2 current gain V =V =6V CE1 CE2 V difference between highest and I =I =30mA; T =25C 0 1  mV BEO E1 E2 amb lowest base-emitter voltage (offset voltage) AC characteristics of any single transistor f transition frequency I =20mA; V =3V; f=1GHz  9  GHz T C CE C collector capacitance I =i =0; V =3V; f=1MHz  0.5  pF c E e CB C feedback capacitance I =0; V =3V; f=1MHz  0.4  pF re C CB G maximum unilateral power gain; I =20mA; V =3V;  15  dB UM C CE note1 T =25C; f=900MHz amb I =20mA; V =3V;  9  dB C CE T =25C; f=2GHz amb s 2 insertion power gain IC=20mA; VCE=3V; 13 14.5  dB 21 f=900MHz; T =25C amb F noise figure I =5mA; V =3V;  1.2 1.6 dB C CE f=900MHz;  = S opt I =20mA; V =3V;  1.7 2.1 dB C CE f=900MHz;  = S opt I =5mA; V =3V;  1.9  dB C CE f=2GHz;  = S opt Note s 2 1. G is the maximum unilateral power gain, assuming s is zero. G = 10 log---------------------------2--1--------------------------- dB UM 12 UM 1– s 21– s 2 11 22 1996Oct08 4

NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 MBG228 MRA705 1.5 12 handbook, halfpage handbook, halfpage Ptot fT (mW) (GHz) VCE = 6V double loaded 1 8 VCE = 3V single loaded 0.5 4 0 0 50 100 150 Ts (oC)200 010−1 1 10 IC (mA) 102 f=1GHz; Tamb=25C. Fig.2 Power derating as a function of soldering Fig.3 Transition frequency as a function of point temperature; typical values. collector current; typical values. MRA703 MRA704 250 0.6 handbook, halfpage handbook, halfpage hFE Cre (pF) 200 0.4 150 100 0.2 50 010−2 10−1 1 10 IC (mA)102 00 4 8 VCB (V) 12 VCE=6V. IC=0; f=1MHz. Fig.4 DC current gain as a function of collector Fig.5 Feedback capacitance as a function of current; typical values. collector-base voltage; typical values. 1996Oct08 5

NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 MGG203 MGG204 20 20 handbook, halfpage handbook, halfpage gain gain (dB) MSG/Gmax (dB) 16 16 GUM 12 12 MSG/Gmax 8 8 GUM 4 4 0 0 0 10 20 30 0 10 20 30 IC (mA) IC (mA) f=900MHz; VCE=3V. f=2GHz; VCE=3V. Fig.6 Gain as a function of collector current; Fig.7 Gain as a function of collector current; typical values. typical values. MGG205 MGG206 50 50 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 40 40 GUM GUM MSG/Gmax 30 30 MSG/Gmax 20 20 10 10 0 0 10 102 103 104 10 102 103 104 f (MHz) f (MHz) IC=5mA; VCE=3V. IC=20 mA; VCE=3V. Fig.8 Gain as a function of frequency; typical Fig.9 Gain as a function of frequency; typical values. values. 1996Oct08 6

NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 MRA714 MRA715 5 20 5 20 handbook, halfpage handbook, halfpage Fmin Gass Fmin IC = 5 mA 20 mA Gass (dB) f = 900 MHz (dB) (dB) Gass (dB) 4 15 4 15 1000 MHz Gass 3 10 3 10 2000 MHz 2 5 2 5 2000 MHz 1000 MHz Fmin 20 mA Fmin 1 0 1 0 900 MHz 5 mA 500 MHz 0 −5 0 −5 1 10 102 102 103 104 IC (mA) f (MHz) VCE=3V. VCE=3V. Fig.10 Minimum noise figure and associated Fig.11 Minimum noise figure and associated available gain as functions of collector available gain as functions of frequency. current. 1996Oct08 7

NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 APPLICATION INFORMATION SPICE parameters for any single BFM520 die C1 C2 handbook, halfpage SEQUENCE No. PARAMETER VALUE UNIT 1 IS 1.016 fA LP LP 2 BF 220.1  3 NF 1.000  B1 T1 T2 B2 4 VAF 48.06 V LB LB 5 IKF 510.0 mA LE LE 6 ISE 283.0 fA 7 NE 2.035  E1 E2 MBG188 8 BR 100.7  9 NR 0.988  10 VAR 1.692 V Fig.12 Package equivalent circuit SOT363A 11 IKR 2.352 mA (inductance only). 12 ISC 24.48 aA 13 NC 1.022  14 RB 10.00  15 IRB 1.000 A 16 RBM 10.00  Lead inductances (nH) 17 RE 0.775  18 RC 2.210  LP 0.4 19(1) XTB 0.000  LB 0.6 20(1) EG 1.110 eV 21(1) XTI 3.000  LE 1.0 22 CJE 1.245 pF 23 VJE 600.0 mV 24 MJE 0.258  25 TF 8.616 ps E2 3 26 XTF 6.788  27 VTF 1.414 V E1 27 6 28 ITF 110.3 mA B2 1 27 3 29 PTF 45.01 deg 30 CJC 447.6 fF C2 3 17 36 48 31 VJC 189.2 mV 32 MJC 0.071  C1 48 36 17 3 6 33 XCJC 0.130  MBG189 34 TR 543.7 ps B1 E2 E1 B2 C2 35(1) CJS 0.000 F 36(1) VJS 750.0 mV 37(1) MJS 0.000  Fig.13 Package capacitance (fF) between indicated nodes. 38 FC 0.780  Note 1. These parameters have not been extracted, thedefault values are shown. 1996Oct08 8

NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 PACKAGE OUTLINE Plastic surface-mounted package; 6 leads SOT363 D B E A X y HE v M A 6 5 4 Q pin 1 index A A1 1 2 3 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) A1 UNIT A max bp c D E e e1 HE Lp Q v w y 1.1 0.30 0.25 2.2 1.35 2.2 0.45 0.25 mm 0.1 1.3 0.65 0.2 0.2 0.1 0.8 0.20 0.10 1.8 1.15 2.0 0.15 0.15 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-11-08 SOT363 SC-88 06-03-16 1996Oct08 9

NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. DEFINITIONS Right to make changes  NXP Semiconductors reserves the right to make changes to information Product specification  The information and data published in this document, including without limitation provided in a Product data sheet shall define the specifications and product descriptions, at any time and specification of the product as agreed between NXP without notice. This document supersedes and replaces all Semiconductors and its customer, unless NXP information supplied prior to the publication hereof. Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an Suitability for use  NXP Semiconductors products are agreement be valid in which the NXP Semiconductors not designed, authorized or warranted to be suitable for product is deemed to offer functions and qualities beyond use in life support, life-critical or safety-critical systems or those described in the Product data sheet. equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe DISCLAIMERS property or environmental damage. NXP Semiconductors Limited warranty and liability  Information in this accepts no liability for inclusion and/or use of NXP document is believed to be accurate and reliable. Semiconductors products in such equipment or However, NXP Semiconductors does not give any applications and therefore such inclusion and/or use is at representations or warranties, expressed or implied, as to the customer’s own risk. the accuracy or completeness of such information and Applications  Applications that are described herein for shall have no liability for the consequences of use of such any of these products are for illustrative purposes only. information. NXP Semiconductors makes no representation or In no event shall NXP Semiconductors be liable for any warranty that such applications will be suitable for the indirect, incidental, punitive, special or consequential specified use without further testing or modification. damages (including - without limitation - lost profits, lost Customers are responsible for the design and operation of savings, business interruption, costs related to the their applications and products using NXP removal or replacement of any products or rework Semiconductors products, and NXP Semiconductors charges) whether or not such damages are based on tort accepts no liability for any assistance with applications or (including negligence), warranty, breach of contract or any customer product design. It is customer’s sole other legal theory. responsibility to determine whether the NXP Notwithstanding any damages that customer might incur Semiconductors product is suitable and fit for the for any reason whatsoever, NXP Semiconductors’ customer’s applications and products planned, as well as aggregate and cumulative liability towards customer for for the planned application and use of customer’s third the products described herein shall be limited in party customer(s). Customers should provide appropriate accordance with the Terms and conditions of commercial design and operating safeguards to minimize the risks sale of NXP Semiconductors. associated with their applications and products. 1996Oct08 10

NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 NXP Semiconductors does not accept any liability related Export control  This document as well as the item(s) to any default, damage, costs or problem which is based described herein may be subject to export control on any weakness or default in the customer’s applications regulations. Export might require a prior authorization from or products, or the application or use by customer’s third national authorities. party customer(s). Customer is responsible for doing all Quick reference data  The Quick reference data is an necessary testing for the customer’s applications and extract of the product data given in the Limiting values and products using NXP Semiconductors products in order to Characteristics sections of this document, and as such is avoid a default of the applications and the products or of not complete, exhaustive or legally binding. the application or use by customer’s third party customer(s). NXP does not accept any liability in this Non-automotive qualified products  Unless this data respect. sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the Limiting values  Stress above one or more limiting product is not suitable for automotive use. It is neither values (as defined in the Absolute Maximum Ratings qualified nor tested in accordance with automotive testing System of IEC60134) will cause permanent damage to or application requirements. NXP Semiconductors accepts the device. Limiting values are stress ratings only and no liability for inclusion and/or use of non-automotive (proper) operation of the device at these or any other qualified products in automotive equipment or conditions above those given in the Recommended applications. operating conditions section (if present) or the Characteristics sections of this document is not warranted. In the event that customer uses the product for design-in Constant or repeated exposure to limiting values will and use in automotive applications to automotive permanently and irreversibly affect the quality and specifications and standards, customer (a) shall use the reliability of the device. product without NXP Semiconductors’ warranty of the product for such automotive applications, use and Terms and conditions of commercial sale  NXP specifications, and (b) whenever customer uses the Semiconductors products are sold subject to the general product for automotive applications beyond NXP terms and conditions of commercial sale, as published at Semiconductors’ specifications such use shall be solely at http://www.nxp.com/profile/terms, unless otherwise customer’s own risk, and (c) customer fully indemnifies agreed in a valid written individual agreement. In case an NXP Semiconductors for any liability, damages or failed individual agreement is concluded only the terms and product claims resulting from customer design and use of conditions of the respective agreement shall apply. NXP the product for automotive applications beyond NXP Semiconductors hereby expressly objects to applying the Semiconductors’ standard warranty and NXP customer’s general terms and conditions with regard to the Semiconductors’ product specifications. purchase of NXP Semiconductors products by customer. No offer to sell or license  Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 1996Oct08 11

NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp12 Date of release: 1996Oct08