BC858CDXV6T1, BC858CDXV6T5 Dual General Purpose Transistor PNP Dual http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. (3) (2) (1) Features • These are Pb−Free Devices Q1 Q2 MAXIMUM RATINGS (4) (5) (6) Rating Symbol Value Unit Collector−Emitter Voltage VCEO −30 V Collector−Base Voltage VCBO −30 V 6 Emitter−Base Voltage VEBO −5.0 V 1 Collector Current − Continuous IC −100 mAdc Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not SOT−563 normal operating conditions) and are not valid simultaneously. If these limits are CASE 463A exceeded, device functional operation is not implied, damage may occur and PLASTIC reliability may be affected. THERMAL CHARACTERISTICS MARKING DIAGRAMS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation, (Note 1) PD TA = 25°C 357 mW 3L M(cid:2) Derate above 25°C 2.9 mW/°C (cid:2) Thermal Resistance R(cid:2)JA 350 °C/W 1 Junction-to-Ambient (Note 1) Characteristic (Both Junctions Heated) Symbol Max Unit 3L =Device Code M =Date Code Total Device Dissipation, (Note 1) PD (cid:2) =Pb−Free Package TA = 25°C 500 mW Derate above 25°C 4.0 mW/°C (Note: Microdot may be in either location) Thermal Resistance R(cid:2)JA 250 °C/W ORDERING INFORMATION Junction-to-Ambient (Note 1) Device Package Shipping† Junction and Storage TJ, Tstg −55 to +150 °C Temperature Range BC858CDXV6T1 SOT−563 4000/Tape & Reel 1. FR−4 @ Minimum Pad BC858CDXV6T1G SOT−563 4000/Tape & Reel (Pb−Free) BC858CDXV6T5 SOT−563 8000/Tape & Reel BC858CDXV6T5G SOT−563 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: October, 2005 − Rev. 3 BC858CDXV6T1/D

BC858CDXV6T1, BC858CDXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CEO V (IC = −10 mA) −30 − − Collector−Emitter Breakdown Voltage V(BR)CES V (IC = −10 (cid:3)A, VEB = 0) −30 − − Collector−Base Breakdown Voltage V(BR)CBO V (IC = −10 (cid:3)A) −30 − − Emitter−Base Breakdown Voltage V(BR)EBO V (IE = −1.0 (cid:3)A) −5.0 − − Collector Cutoff Current (VCB = −30 V) ICBO − − −15 nA Collector Cutoff Current (VCB = −30 V, TA = 150°C) − − −4.0 (cid:3)A ON CHARACTERISTICS DC Current Gain hFE − (IC = −10 (cid:3)A, VCE = −5.0 V) − 270 − (IC = −2.0 mA, VCE = −5.0 V) 420 520 800 Collector−Emitter Saturation Voltage VCE(sat) V (IC = −10 mA, IB = −0.5 mA) − − −0.3 (IC = −100 mA, IB = −5.0 mA) − − −0.65 Base−Emitter Saturation Voltage VBE(sat) V (IC = −10 mA, IB = −0.5 mA) − −0.7 − (IC = −100 mA, IB = −5.0 mA) − −0.9 − Base−Emitter On Voltage VBE(on) V (IC = −2.0 mA, VCE = −5.0 V) −0.6 − −0.75 (IC = −10 mA, VCE = −5.0 V) − − −0.82 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT 100 − − MHz (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance Cob − − 4.5 pF (VCB = −10 V, f = 1.0 MHz) Noise Figure NF − − 10 dB (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k(cid:4), f = 1.0 kHz, BW = 200 Hz) http://onsemi.com 2

BC858CDXV6T1, BC858CDXV6T5 TYPICAL CHARACTERISTICS 2.0 −1.0 AIN 1.5 VCE = −10 V −0.9 TA = 25°C T G TA = 25°C −0.8 VBE(sat) @ IC/IB = 10 N RE 1.0 S) −0.7 R T DC CU 0.7 E (VOL −−00..65 VBE(on) @ VCE = −10 V ZED 0.5 LTAG −0.4 LI O A V RM V, −0.3 O , NFE 0.3 −−00..21 VCE(sat) @ IC/IB = 10 h 0.2 0 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 I , COLLECTOR CURRENT (mAdc) I , COLLECTOR CURRENT (mAdc) C C Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages −2.0 1.0 LTAGE (V) −1.6 TA = 25°C T (mV/C)° 1.2 −55°C to +125°C O N R V CIE 1.6 E −1.2 FI T F T E EMI CO 2.0 CTOR− −0.8 I−C1 0= mA IC = −50 mA IC = −200 mA ATURE 2.4 V, COLLECE −0.4 IC = −20 mA IC = −100 mA , TEMPERVB 2.8 0 θ −0.02 −0.1 −1.0 −10 −20 −0.2 −1.0 −10 −100 I , BASE CURRENT (mA) I , COLLECTOR CURRENT (mA) B C Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient z) 10 H 400 M Cib CT ( 300 7.0 U D TA = 25°C RO 200 pF) 5.0 H P 150 V = −10 V TANCE ( 3.0 Cob NDWIDT 100 TAC E= 25°C C, CAPACI 2.0 GAIN − BA 8600 − 40 T N E 30 R R U 1.0 C 20 −0.4 −0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40 (cid:2), T −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 f V , REVERSE VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mAdc) R C Figure 5. Capacitances Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3

BC858CDXV6T1, BC858CDXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI −X− Y14.5M, 1982. L 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS 6 5 4 IS THE MINIMUM THICKNESS OF BASE MATERIAL. E −Y− HE MILLIMETERS INCHES 1 2 3 DIM MIN NOM MAX MIN NOM MAX A 0.50 0.55 0.60 0.020 0.021 0.023 b 0.17 0.22 0.27 0.007 0.009 0.011 b 65 PL C C 0.08 0.12 0.18 0.003 0.005 0.007 e 0.08 (0.003)M X Y DE 11..5100 11..6200 11..7300 00..005493 00..006427 00..006561 e 0.5 BSC 0.02 BSC L 0.10 0.20 0.30 0.004 0.008 0.012 HE 1.50 1.60 1.70 0.059 0.062 0.066 STYLE 1: PIN 1.EMITTER 1 2.BASE 1 3.COLLECTOR 2 4.EMITTER 2 5.BASE 2 6.COLLECTOR 1 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.0 1.35 0.0394 0.0531 0.5 0.5 (cid:2) (cid:3) 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your Email: orderlit@onsemi.com Phone: 81−3−5773−3850 local Sales Representative. http://onsemi.com BC858CDXV6T1/D 4

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